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정동, 1996 - Google Patents

High indium incorporation in the growth of InGaAs on (100)

정동, 1996

Document ID
11701764753148168380
Author
정동
Publication year
Publication venue
Journal of the Korean Vacuum Society

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High indium incorporation was observed in InGaAs growth by precursor alternating metalorganic chemical vapor deposition (PAMOCVD). A possible mechanism of high indium incorporation into the crystal in PAMOCVD was proposed by considering the decomposition …
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