정동, 1996 - Google Patents
High indium incorporation in the growth of InGaAs on (100)정동, 1996
- Document ID
- 11701764753148168380
- Author
- 정동
- Publication year
- Publication venue
- Journal of the Korean Vacuum Society
External Links
Snippet
High indium incorporation was observed in InGaAs growth by precursor alternating metalorganic chemical vapor deposition (PAMOCVD). A possible mechanism of high indium incorporation into the crystal in PAMOCVD was proposed by considering the decomposition …
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