[go: up one dir, main page]

Arzi et al., 2018 - Google Patents

Millimeter-wave Signal Generation and Detection via the same Triple Barrier RTD and on-chip Antenna

Arzi et al., 2018

View PDF
Document ID
11637732185882310798
Author
Arzi K
Rennings A
Erni D
Weimann N
Prost W
Suzuki S
Asada M
Publication year
Publication venue
2018 First International Workshop on Mobile Terahertz Systems (IWMTS)

External Links

Snippet

Signal generation and detection at mm-wave frequencies via a single chip size component is demonstrated. The monolithic integration consists of high current density Triple Barrier Resonant Tunneling Diode into a slot antenna. The asymmetrical current voltage …
Continue reading at duepublico2.uni-due.de (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L47/00—Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infra-red, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
    • H03D9/06—Transference of modulation using distributed inductance and capacitance

Similar Documents

Publication Publication Date Title
Cimbri et al. Resonant tunneling diodes high-speed terahertz wireless communications-a review
Reddy et al. Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz
Mukherjee et al. GaN IMPATT diode: a photo-sensitive high power terahertz source
Muttlak et al. InGaAs/AlAs resonant tunneling diodes for THz applications: an experimental investigation
Lee et al. A 1.52 THz RTD Triple-Push Oscillator With a $\mu {\hbox {W}} $-Level Output Power
Bozhkov Semiconductor detectors, mixers, and frequency multipliers for the terahertz band
Mélique et al. Fabrication and performance of InP-based heterostructure barrier varactors in a 250-GHz waveguide tripler
Yang et al. Wide-bandwidth electron bolometric mixers: A 2DEG prototype and potential for low-noise THz receivers
Chahal et al. Zero bias resonant tunnel Schottky contact diode for wide-band direct detection
Arzi et al. Millimeter-wave Signal Generation and Detection via the same Triple Barrier RTD and on-chip Antenna
Arzi et al. Triple-barrier resonant-tunnelling diode THz detectors with on-chip antenna
Arzi et al. Broadband detection capability of a triple barrier resonant tunneling diode
Takahagi et al. Equivalent circuit model of triple-barrier resonant tunneling diodes monolithically integrated with bow-tie antennas and analysis of rectification properties towards ultra wideband terahertz detections
Asada et al. Terahertz oscillators using electron devices—An approach with resonant tunneling diodes
Arzi et al. Frequency locking of a free running resonant tunneling diode oscillator by wire-less sub-harmonic injection locking
Orihashi et al. Voltage-controlled sub-terahertz oscillation of resonant tunnelling diode integrated with slot antenna
Wang et al. Analytical modeling and band-structure engineering of resonant tunneling diode for biased terahertz detector
Abdulwahid et al. 24ghz zero-bias asymmetrical spacer layer tunnel diode detectors
Novoa-López et al. Temperature behavior of Gunn oscillations in planar InGaAs diodes
Shi et al. Enhancing power density of strained In0. 8Ga0. 2As/AlAs resonant tunneling diode for terahertz radiation by optimizing emitter spacer layer thickness
Keller et al. Triple barrier resonant tunneling diodes for microwave signal generation and detection
Prost et al. Triple barrier resonant tunneling diodes for THz emission and sensing
Shashkin et al. Sensing microwave-terahertz detectors based on metal-semiconductor-metal structures with symmetrical I–V characteristic
Suzuki et al. RTD oscillators at 430–460 GHz with high output power (~ 200 µW) using integrated offset slot antennas
Asada et al. Room-temperature resonant-tunneling-diode terahertz oscillators