[go: up one dir, main page]

Lashkarev et al., 2011 - Google Patents

Properties of zinc oxide at low and moderate temperatures

Lashkarev et al., 2011

View HTML
Document ID
11678728163995298682
Author
Lashkarev G
Karpyna V
Lazorenko V
Ievtushenko A
Shtepliuk I
Khranovskyy V
Publication year
Publication venue
Low Temperature Physics

External Links

Snippet

The properties of zinc oxide are examined as an analog of gallium nitride over a wide range of temperatures and possible applications. Its economic and environmental advantages are noted, as well as its radiation hardness, compared to group III nitrides. Methods for growing …
Continue reading at pubs.aip.org (HTML) (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02551Group 12/16 materials
    • H01L21/02562Tellurides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/543Solar cells from Group II-VI materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nano-rods
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed

Similar Documents

Publication Publication Date Title
Saikumar et al. RF sputtered films of Ga2O3
Rahman Zinc oxide light-emitting diodes: a review
Wang et al. Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices
Nakahara et al. Nitrogen doped MgxZn1− xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates
Chen et al. Electroluminescence from n-ZnO nanowires/p-GaN heterostructure light-emitting diodes
Guo et al. Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction
Xu et al. ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition
Feng et al. Individual β-Ga2O3 nanowires as solar-blind photodetectors
Roro et al. Influence of metal organic chemical vapor deposition growth parameters on the luminescent properties of ZnO thin films deposited on glass substrates
Hassan et al. High sensitivity and fast response and recovery times in a ZnO nanorod array/p-Si self-powered ultraviolet detector
Huang et al. Thermal annealing effect on material characterizations of β-Ga2O3 epilayer grown by metal organic chemical vapor deposition
Sun et al. Ultraviolet emission from a ZnO rod homojunction light-emitting diode
Zhang et al. p-type conduction in wide-gap Zn1− xMgxO films grown by ultrasonic spray pyrolysis
Du et al. Room temperature defect related electroluminescence from ZnO homojunctions grown by ultrasonic spray pyrolysis
Jaiswal et al. Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics
Na et al. Hybrid pn junction light-emitting diodes based on sputtered ZnO and organic semiconductors
Liu et al. The effect of postannealing on the electrical properties of well-aligned n-ZnO nanorods/p-Si heterojunction
Shaban et al. Characterization of near-infrared n-type β-FeSi2/p-type Si heterojunction photodiodes at room temperature
Hassan et al. Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films
Wang et al. p-type Zn1− xMgxO films with Sb doping by radio-frequency magnetron sputtering
Kim et al. Multidimensional ZnO light-emitting diode structures grown by metal organic chemical vapor deposition on p-Si
Arora et al. Sputtered-growth of high-temperature seed-layer assisted β-Ga2O3 thin film on silicon-substrate for cost-effective solar-blind photodetector application
Lashkarev et al. Properties of zinc oxide at low and moderate temperatures
Sun et al. Epitaxially grown n-ZnO∕ MgO∕ TiN∕ n+-Si (111) heterostructured light-emitting diode
Lu et al. A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes