Kadem et al., 2018 - Google Patents
Efficient P3HT: SWCNTs hybrids as hole transport layer in P3HT: PCBM organic solar cellsKadem et al., 2018
- Document ID
- 11369380874452560609
- Author
- Kadem B
- Kadhim R
- Banimuslem H
- Publication year
- Publication venue
- Journal of Materials Science: Materials in Electronics
External Links
Snippet
The effects of non-treated and acid treated single wall carbon nanotubes (SWCNTs) were investigated as hybrids with P3HT and P3HT: PCBM blend using UV–Vis absorption spectra, XRD, AFM, SEM, electrical conductivity as well as photovoltaic characteristics under …
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer 0 title abstract description 116
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- H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
- H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
- H01L51/0508—Field-effect devices, e.g. TFTs
- H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
- H01L51/0545—Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y02E10/549—Material technologies organic PV cells
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- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/0034—Organic polymers or oligomers
- H01L51/0035—Organic polymers or oligomers comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline, polyphenylene, polyphenylene vinylene
- H01L51/0036—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- H01L51/0045—Carbon containing materials, e.g. carbon nanotubes, fullerenes
- H01L51/0046—Fullerenes, e.g. C60, C70
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