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Lee et al., 2017 - Google Patents

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Lee et al., 2017

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Document ID
11171175399456613970
Author
Lee J
Pak S
Lee Y
Cho Y
Hong J
Giraud P
Shin H
Morris S
Sohn J
Cha S
Kim J
Publication year
Publication venue
Nature Communications

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Snippet

Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been …
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    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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