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Singh, 2024 - Google Patents

Preparation and characterization of AlGaN structures for UVA

Singh, 2024

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Document ID
11063604834134485103
Author
Singh S
Publication year

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Visible/UV LEDs are developed from the same III-Nitride compounds semiconductor materials and share many design and technological aspects. However, the efficiency difference between the two types is quite significant, where the latter lags. Recent …
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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