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Privitera et al., 1998 - Google Patents

A novel method to suppress transient enhanced diffusion of low energy implanted boron based on reactive plasma etching

Privitera et al., 1998

Document ID
10980943464372788292
Author
Privitera V
Priolo F
Mannino G
Napolitani E
Carnera A
Publication year
Publication venue
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No. 98EX144)

External Links

Snippet

The effect of plasma processing on the transient enhanced diffusion of implanted boron in silicon is presented. Thermally oxidised silicon wafers were first etched by plasma and subsequently implanted with boron, with energies ranging from 3 to 20 keV and a dose of …
Continue reading at ieeexplore.ieee.org (other versions)

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