[go: up one dir, main page]

Kumar et al., 2019 - Google Patents

Enhanced thermoelectric properties of InSb: studies on In/Ga doped GaSb/InSb crystals

Kumar et al., 2019

Document ID
10656081359073010078
Author
Kumar V
Hayakawa Y
Udono H
Inatomi Y
Publication year
Publication venue
Intermetallics

External Links

Snippet

In/Ga elements were doped in GaSb/InSb crystals respectively, and their thermoelectric performances were studied. The crystals had cubic zinc blende structure with change in lattice parameters. The charge transfer occurred between all the three (In, Ga and Sb) …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
    • H01L35/16—Selection of the material for the legs of the junction using inorganic compositions comprising tellurium or selenium or sulfur
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
    • H01L35/22—Selection of the material for the legs of the junction using inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen or germanium or silicon, e.g. superconductors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/34—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only

Similar Documents

Publication Publication Date Title
Kumar et al. Enhanced thermoelectric properties of InSb: studies on In/Ga doped GaSb/InSb crystals
Qiu et al. Sulfide bornite thermoelectric material: a natural mineral with ultralow thermal conductivity
Zhang et al. In situ synthesis and thermoelectric properties of La-doped Mg2 (Si, Sn) composites
Shen et al. Recrystallization induced in situ nanostructures in bulk bismuth antimony tellurides: a simple top down route and improved thermoelectric properties
Pei et al. Combination of large nanostructures and complex band structure for high performance thermoelectric lead telluride
Meroz et al. Development of Bi2Te2. 4Se0. 6 alloy for thermoelectric power generation applications
Johnsen et al. Nanostructures boost the thermoelectric performance of PbS
Jiang et al. Thermoelectric properties of textured p-type (Bi, Sb) 2Te3 fabricated by spark plasma sintering
Saparamadu et al. Comparative studies on thermoelectric properties of p-type Mg2Sn0. 75Ge0. 25 doped with lithium, sodium, and gallium
Wang et al. Exploring the doping effects of Ag in p-type PbSe compounds with enhanced thermoelectric performance
Zhang et al. Phase compositions, nanoscale microstructures and thermoelectric properties in Ag2− ySbyTe1+ y alloys with precipitated Sb2Te3 plates
Fu et al. Study on thermoelectric properties of polycrystalline SnSe by Ge doping
Yan et al. Microstructures and thermoelectric properties of GeSbTe based layered compounds
Li et al. Thermoelectric properties of hydrothermally synthesized Bi2Te3− xSex nanocrystals
Williams et al. Understanding the superior thermoelectric performance of Sb precipitated Ge 17 Sb 2 Te 20
Lu et al. Effects of Mn substitution on the phases and thermoelectric properties of Ge0. 8Pb0. 2Te alloy
Ding et al. Thermoelectric properties of melt spun PbTe with multi-scaled nanostructures
Chen et al. Miscibility gap and thermoelectric properties of ecofriendly Mg2Si1− xSnx (0.1≤ x≤ 0.8) solid solutions by flux method
Du et al. Enhanced thermoelectric properties of Mg2Si0. 58Sn0. 42 compounds by Bi doping
Gao et al. Effect of Sb doping on the thermoelectric properties of Mg2Si0. 7Sn0. 3 solid solutions
Zhai et al. Thermoelectric performance of the ordered In 4 Se 3–In composite constructed by monotectic solidification
CN104109785B (en) A kind of Mg-Si-Sn base nano composite thermoelectric materials and preparation method thereof
Li et al. Mid-temperature thermoelectric performance of zone-melted Sb2 (Te, Se) 3 alloys near phase transition boundary
Yang et al. Enhancement of thermoelectric performance of argyrodite Ag8GeSe6 via isoelectronic substitution of Sn for Ge
Kosuga et al. Effects of the defects on the thermoelectric properties of Cu–In–Te chalcopyrite-related compounds