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Majkusiak et al., 2005 - Google Patents

The dependence of MOSFET surface carrier mobility on gate-oxide thickness

Majkusiak et al., 2005

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Document ID
10575650026804280246
Author
Majkusiak B
Jakubowski A
Publication year
Publication venue
IEEE transactions on electron devices

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Snippet

It is shown that if the increment of surface potential above its value at the threshold voltage is not taken into consideration in the case of MOS transistors with very thin gate oxide, comparison of the classical description of the MOS transistor with experimental data leads to …
Continue reading at www.researchgate.net (PDF) (other versions)

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    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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