[go: up one dir, main page]

Grabherr et al., 2014 - Google Patents

VCSEL arrays for high-aggregate bandwidth of up to 1.34 Tbps

Grabherr et al., 2014

Document ID
10230880955154903062
Author
Grabherr M
Intemann S
King R
Wabra S
Jäger R
Riedl M
Publication year
Publication venue
Vertical-Cavity Surface-Emitting Lasers XVIII

External Links

Snippet

Even though the lane speed of VCSEL based AOC and transceivers has reached 25 Gbps and beyond [1-7], parallel optics are getting even more important in order to meet the increasing demand for aggregate bandwidths in upcoming applications, among others, 100 …
Continue reading at www.spiedigitallibrary.org (other versions)

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/10—Light guides of the optical waveguide type
    • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Light guides of the optical waveguide type of the integrated circuit kind basic optical elements, e.g. light-guiding paths
    • G02B6/1221—Light guides of the optical waveguide type of the integrated circuit kind basic optical elements, e.g. light-guiding paths made from organic materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections ; Transmitting or receiving optical signals between chips, wafers or boards; Optical backplane assemblies
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting lasers (SE-lasers)
    • H01S5/183—Surface-emitting lasers (SE-lasers) having a vertical cavity (VCSE-lasers)
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Similar Documents

Publication Publication Date Title
Thraskias et al. Survey of photonic and plasmonic interconnect technologies for intra-datacenter and high-performance computing communications
Zhang et al. Thermal management of hybrid silicon ring lasers for high temperature operation
Forbes et al. Optically interconnected electronic chips: a tutorial and review of the technology
Urino et al. High-density and wide-bandwidth optical interconnects with silicon optical interposers
Shimizu et al. Multichannel and high-density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for interchip optical interconnection
Chen et al. Integration of high-speed GaAs metal-semiconductor-metal photodetectors by means of transfer printing for 850 nm wavelength photonic interposers
Grabherr New applications boost VCSEL quantities: recent developments at Philips
Schow et al. A 24-channel, 300 Gb/s, 8.2 pJ/bit, full-duplex fiber-coupled optical transceiver module based on a single “Holey” CMOS IC
Schow et al. A single-chip CMOS-based parallel optical transceiver capable of 240-Gb/s bidirectional data rates
Yan et al. Complete active–passive photonic integration based on GaN-on-silicon platform
Moehrle et al. InGaAlAs RW-based electro-absorption-modulated DFB-lasers for high-speed applications
Grabherr et al. VCSEL arrays for high-aggregate bandwidth of up to 1.34 Tbps
Shen et al. Chip-level optical interconnects using polymer waveguide integrated with laser/PD on silicon
Duan et al. Demonstration of wafer scale fabrication of 3-D stacked transmitter and receiver modules for optical interconnects
Hasharoni et al. A 1.3 Tb/s parallel optics VCSEL link
Kanazawa et al. 224-Gbit/s 4-PAM operation of a high-modulation-bandwidth high-output-power Hi-FIT AXEL transmitter
Duan et al. A novel 3D stacking method for opto-electronic dies on CMOS ICs
Kanazawa et al. Compact flip‐chip interconnection 8× 50 Gbit/s EADFB laser array module for 400 Gbit/s transceiver
Urino et al. High-density optical interconnects by using silicon photonics
Tsiokos et al. Optical interconnects: fundamentals
Carson et al. Compact VCSEL-based laser array communications systems for improved data performance in satellites
Ukaegbu et al. Performance analysis of vertical and horizontal transmitter array modules using short-and long-wavelength VCSELs for optical interconnects
Schow Power-efficient transceivers for high-bandwidth, short-reach interconnects
Neumann et al. Modeling and characterization of optical TSVs
Wolf et al. Energy-efficient and temperature-stable high-speed VCSELs for optical interconnects