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Shekar et al., 1994 - Google Patents

Trench gate emitter switched thyristors

Shekar et al., 1994

Document ID
10010527039974050951
Author
Shekar M
Korec J
Baliga B
Publication year
Publication venue
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

External Links

Snippet

A new MOS-gated Emitter Switched Thyristor (EST) structure using trench gate technology is reported for the first time. In this new trench gate EST, the voltage drop across the series lateral MOSFET is reduced due to an increase in channel density resulting in forward …
Continue reading at ieeexplore.ieee.org (other versions)

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