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Runnion et al., 2002 - Google Patents

Thickness dependence of stress-induced leakage currents in silicon oxide

Runnion et al., 2002

Document ID
993434236634091041
Author
Runnion E
Gladstone S
Scott R
Dumin D
Lie L
Mitros J
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

The thickness dependence of high-voltage stress-induced leakage currents (SILC's) has been measured in oxides with thicknesses between 5 and 11 nm. The SILC's were shown to be composed of two components: a transient component and a DC component. Both …
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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