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Swerts et al., 2006 - Google Patents

Highly scalable ALD-deposited hafnium silicate gate stacks for low standby power applications

Swerts et al., 2006

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Document ID
9907021803801897740
Author
Swerts J
Deweerd W
Wang C
Fedorenko Y
Delabie A
Shero E
Zhao C
Maes J
De Gendt S
Wilk G
Publication year
Publication venue
MRS Online Proceedings Library (OPL)

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The electrical performance of hafnium silicate (HfSiOx) gate stacks grown by atomic layer deposition (ALD) has been evaluated in capacitors and transistors. First, scaling potential of HfSiOx layers was studied as function of composition and thickness. It is shown that the …
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