[go: up one dir, main page]

Guellec et al., 2012 - Google Patents

A low-noise 15-µm pixel-pitch 640x512 hybrid InGaAs image sensor for night vision

Guellec et al., 2012

Document ID
9558967488925297572
Author
Guellec F
Dubois S
De Borniol E
Castelein P
Martin S
Guiguet R
Tchagaspanian M
Rouvié A
Bois P
Publication year
Publication venue
Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII

External Links

Snippet

Hybrid InGaAs focal plane arrays are very interesting for night vision because they can benefit from the nightglow emission in the Short Wave Infrared band. Through a collaboration between III-V Lab and CEA-Léti, a 640x512 InGaAs image sensor with 15μm …
Continue reading at www.spiedigitallibrary.org (other versions)

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/369—SSIS architecture; Circuitry associated therewith
    • H04N5/374—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N5/3745—Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N5/37452—Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising additional storage means
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/369—SSIS architecture; Circuitry associated therewith
    • H04N5/378—Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/351—Control of the SSIS depending on the scene, e.g. brightness or motion in the scene
    • H04N5/355—Control of the dynamic range
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/357—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/33—Transforming infra-red radiation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems
    • H04N3/10—Scanning details of television systems by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/222—Studio circuitry; Studio devices; Studio equipment; Cameras comprising an electronic image sensor, e.g. digital cameras, video cameras, TV cameras, video cameras, camcorders, webcams, camera modules for embedding in other devices, e.g. mobile phones, computers or vehicles
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material

Similar Documents

Publication Publication Date Title
US7518645B2 (en) CMOS active pixel sensor with improved dynamic range and method of operation
US7616231B2 (en) CMOS active pixel sensor with improved dynamic range and method of operation for object motion detection
US7551059B2 (en) Hybrid infrared detector array and CMOS readout integrated circuit with improved dynamic range
US20080218614A1 (en) Dynamic range enhancement scheme for imagers
US6504141B1 (en) Adaptive amplifier circuit with enhanced dynamic range
JP7749803B2 (en) Pixel array, image sensor, and method of operating a pixel array
De Borniol et al. High-performance 640 x 512 pixel hybrid InGaAs image sensor for night vision
WO2006073875A2 (en) Cmos active pixel sensor with improved dynamic range and method of operation, method for identifying moving objects and hybrid array with ir detector
Pain et al. An enhanced-performance CMOS imager with a flushed-reset photodiode pixel
Jo et al. Very wide dynamic range ROIC with pixel-level ADC for SWIR FPAs
US6538245B1 (en) Amplified CMOS transducer for single photon read-out of photodetectors
Wany et al. CMOS image sensor with NMOS-only global shutter and enhanced responsivity
Sun et al. A novel readout integrated circuit with a dual-mode design for single-and dual-band infrared focal plane array
Guellec et al. A low-noise 15-µm pixel-pitch 640x512 hybrid InGaAs image sensor for night vision
Kozlowski et al. Performance limits in visible and infrared imager sensors
Zou et al. Low-light-level CMOS imaging sensor with CTIA and digital correlated double sampling
Joshi et al. Ultra-low-noise high-frame-rate ROIC for visible and infrared focal plane arrays
Vereecken et al. A low-noise, extended dynamic range 1.3 megapixel InGaAs array
Zou et al. A low-light-level CMOS image sensor with a novel correlated double sampling based on CTIA
Jing et al. Design of ultra-low-power readout circuit for 1 024× 1 024 UV AlGaN focal plane arrays
Kozlowski et al. Ultralow-noise infrared focal plane array status
Fragasse et al. An Open-Circuit Voltage Pixel for Low-Light Visible Imaging in a Standard CMOS Process
Martijn et al. A 640 by 480 pixels readout circuit for IR imaging
Liu et al. CCD/CMOS hybrid FPA for low light level imaging
Kavusi et al. A 0.18 μm CMOS 1000 frames/sec, 138dB Dynamic Range Readout Circuit for 3D-IC IR Focal Plane Arrays