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Chung et al., 2005 - Google Patents

NH3-RTP grown ultra-thin oxynitride layers for MOS gate applications

Chung et al., 2005

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Document ID
9480157500214477268
Author
Chung H
Dietl W
Niess J
Nenyei Z
Lerch W
Wieczorek K
Krumm N
Ludsteck A
Eisele I
Publication year
Publication venue
Materials Science and Engineering: B

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Ultra-thin oxynitrides can serve as gate dielectrics for the technology nodes 100nm and below. In this work, we present the properties of ultra-thin oxynitride gate dielectrics prepared by RTP nitridation of Si in NH3 followed by post-grown oxidation in O2 or in steam …
Continue reading at web.engr.uky.edu (PDF) (other versions)

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