[go: up one dir, main page]

Zhang et al., 2023 - Google Patents

Progress in HgTe colloidal quantum dots infrared detectors: from single-element devices to focal plane arrays

Zhang et al., 2023

Document ID
927456370844092379
Author
Zhang S
Hao Q
Tang X
Publication year
Publication venue
Ninth Symposium on Novel Photoelectronic Detection Technology and Applications

External Links

Snippet

Infrared detectors have a wide range of applications in temperature monitoring, industrial detection, automotive auxiliary driving, and material identification due to their unique capabilities such as temperature sensitivity, molecular bond vibration recognition, and haze …
Continue reading at www.spiedigitallibrary.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
    • H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/10—Radiation pyrometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry using electric radiation detectors using resistors, thermistors, or semi-conductors sensitive to radiation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/02—Details

Similar Documents

Publication Publication Date Title
Li et al. The development of InGaAs short wavelength infrared focal plane arrays with high performance
Zhang et al. Spray‐stencil lithography enabled large‐scale fabrication of multispectral colloidal quantum‐dot infrared detectors
Wang et al. Polarizer-free polarimetric image sensor through anisotropic two-dimensional GeSe
Luo et al. Megapixel large-format colloidal quantum-dot infrared imagers with resonant-cavity enhanced photoresponse
Hao et al. Development of flexible and curved infrared detectors with HgTe colloidal quantum dots
Zhou et al. Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays
Zhang et al. Single-/fused-band dual-mode mid-infrared imaging with colloidal quantum-dot triple-junctions
Rogalski et al. Comparison of performance limits of HOT HgCdTe photodiodes and colloidal quantum dot infrared detectors
Shkedy et al. Development of 10μm pitch XBn detector for low SWaP MWIR applications
Mushini et al. 2D SWIR image sensor with extended wavelength cutoff of 2.5 μm on InP/InGaAs epitaxial wafers with graded buffer layers
Höglund et al. Advantages of T2SL: results from production and new development at IRnova
Allen et al. Image sensors and cameras based on colloidal quantum dots (CQD) for visible-to-SWIR detection
Tang et al. Colloidal quantum dots based infrared electronic eyes for multispectral imaging
Andersson et al. 320 x 240 pixels quantum well infrared photodetector (QWIP) array for thermal imaging: fabrication and evaluation
Figgemeier et al. High-performance SWIR/MWIR and MWIR/MWIR bispectral MCT detectors by AIM
Stadelmann et al. Development of bi-spectral InAs/GaSb type II superlattice image detectors
Miura et al. High Performance TypeII Superlattice Focal Plane Array with 6μm Cutoff Wavelength
Figgemeier et al. State of the art of AIM LWIR and VLWIR MCT 2D focal plane detector arrays for higher operating temperatures
Zhang et al. Progress in HgTe colloidal quantum dots infrared detectors: from single-element devices to focal plane arrays
Inada et al. Recent development of SWIR focal plane array with InGaAs/GaAsSb type-II quantum wells
Figgemeier et al. MCT by MBE on GaAs at AIM: state of the art and roadmap
Ko et al. Comparison of InGaAs and type-II superlattice based extended SWIR detectors
Tang et al. Towards dual-band shot-wave and mid-wave infrared focal plane array by using colloidal quantum dots
Korotcenkov Introduction in IR detectors
Razeghi et al. Low-frequency noise in mid-wavelength infrared InAs/GaSb type-II superlattice based focal plane arrays