[go: up one dir, main page]

Bergquist et al., 1984 - Google Patents

A wideband frequency-offset-locked dye laser spectrometer using a Schottky barrier mixer

Bergquist et al., 1984

View PDF
Document ID
9192268349999217771
Author
Bergquist J
Daniel H
Publication year
Publication venue
Optics communications

External Links

Snippet

Precise frequency-controlled operation of a single-mode ring dye laser with respect to another is reported at a frequency difference of 234 GHz. This extension of the technique of laser frequency offset locking into the microwave range has been achieved by mixing the …
Continue reading at tf.nist.gov (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Similar Documents

Publication Publication Date Title
US5636035A (en) Method and apparatus for dual modulation laser spectroscopy
Evenson et al. Extension of absolute frequency measurements to the cw He–Ne laser at 88 THz (3.39 μ)
Bernard et al. CO/sub 2/laser stabilization to 0.1-Hz level using external electrooptic modulation
Barger et al. Fast frequency stabilization of a cw dye laser
Arbes et al. Precise determination of the ground state hyperfine structure splitting of43Ca II
Bergquist et al. A wideband frequency-offset-locked dye laser spectrometer using a Schottky barrier mixer
Nagourney et al. High resolution Ba+ monoion spectroscopy with frequency stabilized color-center laser
Coe et al. Sub‐Doppler direct infrared laser absorption spectroscopy in fast ion beams: The fluorine hyperfine structure of HF+
Gubin et al. Transportable He-Ne/CH/sub 4/optical frequency standard and absolute measurements of its frequency
Freed et al. Advances in CO2 laser stabilization using the 4.3 μm fluorescence technique
Mocker Pressure and current dependent shifts in the frequency of oscillation of the CO2 laser
Kallenbach et al. A blue dye laser with sub-kilohertz stability
Ito Doppler-free modulation transfer spectroscopy of rubidium 5 2 S 1/2–6 2 P 1/2 transitions using a frequency-doubled diode laser blue-light source
Svelto et al. Characterization of Yb–Er: glass lasers at 1.5 μm wavelength in terms of amplitude and frequency stability
Schäfer et al. A 240–380 GHz millimetre wave source for very high resolution spectroscopy of high Rydberg states
Bradley et al. Absolute measurement of submillimetre and far infra-red laser frequencies
Farhoomand et al. Direct measurement of the fundamental rotational transitions of the OH radical by laser sideband spectroscopy
Weber et al. Sub‐Doppler infrared–infrared double resonance spectroscopy of NH3 using Stark tuning and a diode laser
Madej et al. High-resolution spectroscopy and frequency measurement of the midinfrared 5d/sup 2/D/sub 3/2/-5d/sup 2/D/sub 5/2/transition of a single laser-cooled barium ion
Godone et al. FM-noise measurements on an optically pumped FIR laser
JP2023157861A (en) Optical millimeter wave oscillator defined by rotational spectroscopy
Whitford et al. Absolute frequency measurements of 12C16O and 13C16O laser transitions
Ma et al. Spectroscopy of Te2 with modulation transfer: reference lines for precision spectroscopy in Yb+ at 467 nm
Svelto et al. Absolute frequency stabilization of two diode-pumped Er–Yb: Glass lasers to the acetylene P (15) line at 1534 nm
Carelli et al. Frequency and efficiency measurements on FIR laser lines close to the N+ 3 P 2− 3 P 1 transition