Kubota et al., 2009 - Google Patents
Synthesis of cubic boron nitride crystals using Ni–Cr and Ni–Cr–Al solvents under high pressureKubota et al., 2009
- Document ID
- 9129020265094722618
- Author
- Kubota Y
- Taniguchi T
- Publication year
- Publication venue
- Japanese Journal of Applied Physics
External Links
Snippet
Cubic boron nitride (cBN) was synthesized using Ni–Cr and Ni–Cr–Al solvents under high pressures (4–6 GPa) and high temperatures (1300–1700 C). The size of the cBN crystals obtained in the Ni–Cr solvent (synthesized at 5.5 GPa and 1400 C for 30 min) was …
- 239000002904 solvent 0 title abstract description 102
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making alloys
- C22C1/04—Making alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B31/00—Carbon; Compounds thereof
- C01B31/02—Preparation of carbon; Purification; After-treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C14/00—Alloys based on titanium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
- C04B35/6455—Hot isostatic pressing
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4349907B2 (en) | Sintered polycrystalline gallium nitride and method for producing the same | |
| WO2012157293A1 (en) | Silicon carbide powder and method for producing silicon carbide powder | |
| US20140147327A1 (en) | Method for manufacturing alloy containing transition metal carbide, tungsten alloy containing transition metal carbide, and alloy manufactured by said method | |
| Sumiya et al. | Development of high-quality large-size synthetic diamond crystals | |
| TWI646048B (en) | Single crystal state diamond particle containing cubic boron nitride particles, and manufacturing method thereof | |
| WO2007011019A1 (en) | High-hardness polycrystalline diamond and process for producing the same | |
| Otani et al. | Preparation of Mo2C single crystals by the floating zone method | |
| Luo et al. | Low-temperature densification by plasma activated sintering of Mg2Si-added Si3N4 | |
| Tao | Crystal growth of tungsten during hydrogen reduction of tungsten oxide at high temperature | |
| Kubota et al. | Synthesis of cubic and hexagonal boron nitrides by using Ni solvent under high pressure | |
| Chen et al. | Preparation of Si3N4 ceramics with high thermal conductivity and mechanical properties using novel Gd3Si2C2 as a sintering aid | |
| Kubota et al. | Synthesis of cubic boron nitride crystals using Ni–Cr and Ni–Cr–Al solvents under high pressure | |
| JP7718039B2 (en) | Gallium nitride particles and method for producing the same | |
| Kubota et al. | Synthesis of cubic boron nitride using Ni–Mo alloy as a solvent | |
| Osipov et al. | Features of synthesis of ZnSe ceramics from nanopowders obtained using a high-power laser | |
| JP4061374B2 (en) | Method for producing ultrafine particle cBN sintered body | |
| Kubota et al. | Effect of Al on the formation of cubic boron nitride using Ni3Al solvent under high pressure | |
| Patsera et al. | Combustion synthesis and consolidation of Ti (C, N)–Si3N4–SiC heterophase ceramic with YAG sintering additives | |
| Liu et al. | Synthesis of Ti (C, N) w and preparation of whisker-reinforced Ti (C, N)-based cermets | |
| JP2003286023A (en) | Production method of silicon sintered body and silicon sintered body | |
| Ma et al. | GaN crystals prepared through solid-state metathesis reaction from NaGaO2 and BN under high pressure and high temperature | |
| Hong et al. | Diamond formation from a system of SiC and a metal | |
| Dabhade et al. | Dilatometry of attrition milled nanocrystalline titanium powders | |
| JP5257995B2 (en) | Method for producing ultraviolet light emitting hexagonal boron nitride crystal | |
| Cherezov et al. | Studying titanium powder obtained by SHS hydrogenation and dehydrogenation using a vacuum furnace |