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DeMoulin et al., 2002 - Google Patents

Influence of perimeter recombination on high-efficiency GaAs p/n heteroface solar cells

DeMoulin et al., 2002

Document ID
9036965660082874577
Author
DeMoulin P
Tobin S
Lundstrom M
Carpenter M
Melloch M
Publication year
Publication venue
IEEE electron device letters

External Links

Snippet

Perimeter recombination currents have been characterized for 0.5-cm-square and 2-cm- square p/n GaAs solar cells. Measurements show that perimeter recombination dominates the n= 2 dark current component of these high-efficiency solar cells. The results also suggest …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L31/068Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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