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Kim et al., 2019 - Google Patents

Highly stable self-aligned Ni-InGaAs and non-self-aligned Mo contact for monolithic 3-D integration of InGaAs MOSFETs

Kim et al., 2019

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Document ID
9005525109068837972
Author
Kim S
Kim S
Shin S
Han J
Geum D
Shim J
Lee S
Kim H
Ju G
Song J
Alam M
Kim H
Publication year
Publication venue
IEEE Journal of the Electron Devices Society

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Self-heating has emerged as an important performance/reliability challenge for modern MOSFETs. The challenge is further acerbated for III-V transistors, especially when integrated monolithically in a 3-D platform for applications in ultrafast logic, imagers, etc. A key …
Continue reading at ieeexplore.ieee.org (PDF) (other versions)

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