Dotson et al., 2004 - Google Patents
Low cost MEMS processing techniquesDotson et al., 2004
View PDF- Document ID
- 8278377790168252466
- Author
- Dotson N
- Kim P
- Mason A
- Publication year
- Publication venue
- Proc. of ASEE/NCS Spring Conference, American Society for Engineering Education
External Links
Snippet
This paper presents low cost techniques for the fabrication of microstructures using a limited set of equipment available in many university labs. The techniques developed can be used to process bare silicon wafers or to complete post-CMOS processing of fabricated integrated …
- 238000000034 method 0 title abstract description 92
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Exposure apparatus for microlithography
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICRO-STRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing micro-systems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing micro-systems without movable or flexible elements
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107112207B (en) | self-aligned patterning using directed self-assembly of block copolymers | |
US20080292991A1 (en) | High fidelity multiple resist patterning | |
TWI249626B (en) | Polarized reticle, photolithography system, and method of forming a pattern using a polarized reticle in conjunction with polarized light | |
TW200926263A (en) | Resolution enhancement techniques combining four beam interference-assisted lithography with other photolithography techniques | |
TW200308050A (en) | Method for reducing pitch in semiconductor fabrication | |
JP5768074B2 (en) | Pattern formation method | |
US20100086877A1 (en) | Pattern forming method and pattern form | |
TW200929329A (en) | Resolution enhancement techniques combining interference-assisted lithography with other photolithography techniques | |
CN109786226A (en) | The forming method of semiconductor device | |
KR20220034830A (en) | A method for modulating stress transfer in a film on a substrate | |
US5899728A (en) | Method of forming a lithographic mask | |
US10283457B2 (en) | Method for lithographically forming wafer identification marks and alignment marks | |
US20250258435A1 (en) | Semiconductor structure and manufacturing method thereof | |
TWI326467B (en) | Method for quartz photomask plasma etching | |
Dotson et al. | Low cost MEMS processing techniques | |
US20050059256A1 (en) | Method of forming a resist pattern and fabricating tapered features | |
US7419915B2 (en) | Laser assisted chemical etching method for release microscale and nanoscale devices | |
US6602794B1 (en) | Silylation process for forming contacts | |
US6221537B1 (en) | Method of forming mask with angled struts of reduced height | |
US9536706B2 (en) | Self-aligned dynamic pattern generator device and method of fabrication | |
US7767984B2 (en) | Resist collapse prevention using immersed hardening | |
KR20160012932A (en) | Direct current superposition curing for resist reflow temperature enhancement | |
Pham et al. | IC-compatible process for pattern transfer in deep wells for integration of RF components | |
JPH1154409A (en) | Mask manufacturing member and mask manufacturing method | |
TWI259330B (en) | Stencil mask, production method thereof, exposure apparatus, exposure method and electronic device production method |