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Dash et al., 2022 - Google Patents

Influence of current conduction paths and native defects on gas sensing properties of polar and non-polar GaN

Dash et al., 2022

Document ID
820105448740101822
Author
Dash A
Sharma A
Jain S
Patra B
Gundimeda A
Mallik S
Gupta G
Publication year
Publication venue
Journal of Alloys and Compounds

External Links

Snippet

The CO gas sensing characteristics of polar GaN (P–GaN) and non-polar GaN (NP–GaN) thin-films grown by RF–plasma assisted molecular beam epitaxy on c–Al 2 O 3 and r–Al 2 O 3 substrate is analyzed. The temperature-dependent (27–300° C) current-voltage (I–V) …
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    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L29/20—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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