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Li et al., 1992 - Google Patents

Water‐related capacitance‐voltage recovery effect in low‐temperature‐annealed chemical vapor deposited phosphosilicate (P glass) films

Li et al., 1992

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Document ID
7912616898658363361
Author
Li S
Murarka S
Guo X
Lanford W
Publication year
Publication venue
Journal of applied physics

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The effect of exposing low‐temperature‐annealed chemical vapor deposited phosphosilicate glass films directly to water on the properties of such oxides has been studied. The capacitance‐voltage (C‐V) curves of these as‐deposited oxides have been …
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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