Böer, 1992 - Google Patents
Surface AnalysisBöer, 1992
- Document ID
- 7580163871427421577
- Author
- Böer K
- Publication year
- Publication venue
- Survey of Semiconductor Physics: Volume II Barriers, Junctions, Surfaces, and Devices
External Links
Snippet
A large number of techniques are available to investigate surfaces, each one having its own advantages and disadvantages. Only a few are capable of yielding surface crystallographic data directly. Others provide information from which such data can be derived. Still others …
- 238000005211 surface analysis 0 title description 35
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by using diffraction of the radiation, e.g. for investigating crystal structure; by using reflection of the radiation
- G01N23/207—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by using diffraction of the radiation, e.g. for investigating crystal structure; by using reflection of the radiation by means of diffractometry using detectors, e.g. using an analysing crystal or a crystal to be analysed in a central position and one or more displaceable detectors in circumferential positions
- G01N23/2076—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by using diffraction of the radiation, e.g. for investigating crystal structure; by using reflection of the radiation by means of diffractometry using detectors, e.g. using an analysing crystal or a crystal to be analysed in a central position and one or more displaceable detectors in circumferential positions for spectrometry, i.e. using an analysing crystal, e.g. for measuring X-ray fluorescence spectrum of a sample with wavelength-dispersion, i.e. WDXFS
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission using electron or ion microprobe or incident electron or ion beam
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission using electron or ion microprobe or incident electron or ion beam with incident electron beam
- G01N23/2252—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission using electron or ion microprobe or incident electron or ion beam with incident electron beam and measuring excited X-rays
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/07—Investigating materials by wave or particle radiation secondary emission
- G01N2223/076—X-ray fluorescence
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24475—Scattered electron detectors
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a micro-scale
- H01J2237/3174—Etching microareas
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
- H01J37/256—Tubes for spot-analysing by electron or ion beams; Microanalysers using scanning beams
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Greczynski et al. | X-ray photoelectron spectroscopy of thin films | |
| Brydson | Electron energy loss spectroscopy | |
| Bowen et al. | High resolution X-ray diffractometry and topography | |
| Duke | Determination of the structure and properties of solid surfaces by electron diffraction and emission | |
| Fadley | X-ray photoelectron spectroscopy: Progress and perspectives | |
| Taglauer et al. | Surface analysis with low energy ion scattering | |
| Cowley | Electron microscopy of surface structure | |
| Yaguchi et al. | Observation of three-dimensional elemental distributions of a Si device using a 360°-tilt FIB and the cold field-emission STEM system | |
| US5347126A (en) | Time-of-flight direct recoil ion scattering spectrometer | |
| US4724320A (en) | Method of observing the arrangement of atoms on a surface and apparatus therefor | |
| Abou‐Ras et al. | Electron microscopy on thin films for solar cells | |
| Kelly | Atomic-scale analytical tomography | |
| US7495217B1 (en) | Film thickness and composition measurement via auger electron spectroscopy and electron probe microanalysis | |
| Siegel et al. | Quantitative reflection electron diffraction in an ultra high vacuum camera | |
| Evans Jr | Ion probe mass spectrometry: Overview | |
| Gunawardane et al. | Auger electron spectroscopy | |
| Böer | Surface Analysis | |
| Prasher et al. | Exploring X-Ray Techniques for Comprehensive Material Characterization and Analysis | |
| Tong | Exploring surface structure | |
| Unertl | Applications of Rutherford ion backscattering to surface crystallography | |
| Cowley et al. | Contrast and resolution in REM, SEM and SAM | |
| Hoflund | Spectroscopic Techniques: X-ray Photoelectron Spectroscopy (XPS), Auger Electron Spectroscopy (AES) and Ion Scattering Spectroscopy (ISS) | |
| Mitchell | Low-energy electron diffraction | |
| Margaritondo | Photoemission and free electron laser spectromicroscopy: Photoemission at high lateral resolution | |
| Holtz et al. | 20 Analytical Electron Microscopy during In Situ Liquid Cell Studies |