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Han et al., 2007 - Google Patents

A Novel DRAM Cell Transistor Featuring a Partially-insulated Bulk FinFET (Pi-FinFET) with a pad-Polysilicon Side Contacts (PSC)

Han et al., 2007

Document ID
7139983684553656352
Author
Han S
Park J
Sohn S
Lee J
Chae K
Jeon C
Park J
Kim S
Kim W
Yamada S
Kim Y
Park H
Cho N
Kim H
Lee M
Lee Y
Yang W
Park D
Ryu B
Publication year
Publication venue
2007 IEEE Symposium on VLSI Technology

External Links

Snippet

The pad-Polysilicon Side Contact (PSC) has drastically improved the performance of the Partially-insulated bulk FinFET (Pi-FinFET). PSC enabled to dope a source and drain (S/D) of the fin structure uniformly from the top of the fin to the Pi layer. Since the uniform S/D …
Continue reading at ieeexplore.ieee.org (other versions)

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