[go: up one dir, main page]

Baer et al., 1995 - Google Patents

A 32-element micromachined thermal imager with on-chip multiplexing

Baer et al., 1995

Document ID
6788574291362744448
Author
Baer W
Najafi K
Wise K
Toth R
Publication year
Publication venue
Sensors and Actuators A: Physical

External Links

Snippet

This paper describes a multiplexed infrared (IR) thermal line imager realized in silicon using micromachined dielectric windows and thermopile detector elements. The imager consists of 32 detectors, each having 40 series-connected thermocouples, arranged in two staggered …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/02—Details
    • G01J5/08—Optical features
    • G01J5/0803—Optical elements not provided otherwise, e.g. optical manifolds, gratings, holograms, cubic beamsplitters, prisms, particular coatings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/02—Details
    • G01J5/04—Casings Mountings
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infra-red imagers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/10—Radiation pyrometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • G01J5/14—Electrical features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/10—Radiation pyrometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry using electric radiation detectors using resistors, thermistors, or semi-conductors sensitive to radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/02—Details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation
    • G01J2005/067—Compensating for environment parameters
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/50—Radiation pyrometry using techniques specified in the subgroups below
    • G01J5/52—Radiation pyrometry using techniques specified in the subgroups below using comparison with reference sources, e.g. disappearing-filament pyrometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J2005/0077—Imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J2005/0048—Calibrating; Correcting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry
    • G01J5/0003—Radiation pyrometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter

Similar Documents

Publication Publication Date Title
Baer et al. A 32-element micromachined thermal imager with on-chip multiplexing
Bhan et al. Uncooled infrared microbolometer arrays and their characterisation techniques
Tanaka et al. Infrared focal plane array incorporating silicon IC process compatible bolometer
Oliver et al. A 1024-element bulk-micromachined thermopile infrared imaging array
Foote et al. Uncooled thermopile infrared detector linear arrays with detectivity greater than 10/sup 9/cmhz/sup 1/2//w
EP1045232B1 (en) Infrared sensor and method of manufacturing the same
US20060244067A1 (en) Tmos-infrared uncooled sensor and focal plane array
US20160282189A1 (en) On-chip calibration system and method for infrared sensor
US7385199B2 (en) Microbolometer IR focal plane array (FPA) with in-situ mirco vacuum sensor and method of fabrication
KR100313909B1 (en) IR sensor and method for fabricating the same
CN101995295B (en) Non-refrigerating infrared focal plane array as well as preparation method and application thereof
US5747863A (en) Infrared solid-state image pickup device and infrared solid-state image pickup apparatus equipped with this device
Shen et al. An uncooled infrared microbolometer array for low-cost applications
Dong et al. Fabrication and characterization of integrated uncooled infrared sensor arrays using a-Si thin-film transistors as active elements
Wada et al. Design and performance of 256x256 bolometer-type uncooled infrared detector
Eminoğlu et al. Uncooled Infrared Focal Plane Arrays with Integrated Readout Circuritry Using MEMS and Standard CMOS Technologies
Dem'yanenko et al. Uncooled 160x120 microbolometer IR FPA based on sol-gel VOx
Murphy et al. Multi-spectral uncooled microbolometer sensor for the Mars 2001 orbiter THEMIS instrument
JPH0394127A (en) infrared sensor
Tanaka et al. Infrared linear image sensor using a poly-Si pn junction diode array
Teranishi Thermoelectric uncooled infrared focal plane arrays
Foote et al. Space science applications of thermopile detector arrays
Modarres-Zadeh et al. Parylene supported 20um* 20um uncooled thermoelectric infrared detector with high fill factor
Chen et al. VO 2-based microbolometer uncooled infrared focal plane arrays with CMOS readout integrated circuit
Dillner et al. A 64-pixel linear thermopile array chip designed for vacuum environment