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Niraula et al., 2016 - Google Patents

Improving the performances of CdTe gamma ray detectors by H 2/Ar ECR plasma processing

Niraula et al., 2016

Document ID
664740527825022052
Author
Niraula M
Yasuda K
Kitagawa S
Kojima M
Agata Y
Publication year
Publication venue
IEEE Electron Device Letters

External Links

Snippet

H 2/Ar electron cyclotron resonance plasma processing of the high-resistivity (111) CdTe crystals was studied to find its effect on the leakage current and the gamma ray detection properties of the detectors. All the crystals were chemically etched in a bromine-methanol …
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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