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Tamura et al., 2014 - Google Patents

Embedded SRAM and Cortex-M0 core with backup circuits using a 60-nm crystalline oxide semiconductor for power gating

Tamura et al., 2014

Document ID
6539958368728993847
Author
Tamura H
Kato K
Ishizu T
Onuki T
Uesugi W
Ohmaru T
Ohshima K
Kobayashi H
Yoneda S
Isobe A
Tsutsui N
Hondo S
Suzuki Y
Okazaki Y
Atsumi T
Shionoiri Y
Maehashi Y
Goto G
Fujita M
Myers J
Korpinen P
Koyama J
Yamamoto Y
Yamazaki S
Publication year
Publication venue
2014 IEEE COOL Chips XVII

External Links

Snippet

A chip of embedded SRAM having backup circuits using a 60-nm c-axis aligned crystalline oxide semiconductor (CAAC-OS) such as CAAC indium-gallium-zinc oxide (CAAC-IGZO) and Cortex-M0 core having flip-flops with CAAC-OS backup circuits is fabricated. The SRAM …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06F—ELECTRICAL DIGITAL DATA PROCESSING
    • G06F1/00—Details of data-processing equipment not covered by groups G06F3/00 - G06F13/00, e.g. cooling, packaging or power supply specially adapted for computer application
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/32—Means for saving power
    • G06F1/3203—Power Management, i.e. event-based initiation of power-saving mode
    • G06F1/3234—Action, measure or step performed to reduce power consumption
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

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