Girard-Desprolet, 2015 - Google Patents
Plasmon-based spectral filtering with metallic nanostructures for CMOS image sensorsGirard-Desprolet, 2015
View PDF- Document ID
- 5898405053023173909
- Author
- Girard-Desprolet R
- Publication year
External Links
Snippet
Image sensors have experienced a renewed interest with the prominent market growth of wireless communication, together with a diversification of functionalities. In particular, a recent application known as Ambient Light Sensing (ALS) has emerged for a smarter screen …
- 238000001914 filtration 0 title abstract 2
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colour
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colour
- G01J3/28—Investigating the spectrum
- G01J3/30—Measuring the intensity of spectral line directly on the spectrum itself
- G01J3/36—Investigating two or more bands of a spectrum by separate detectors
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Burgos et al. | Color imaging via nearest neighbor hole coupling in plasmonic color filters integrated onto a complementary metal-oxide semiconductor image sensor | |
Chen et al. | Nanophotonic image sensors | |
Miyata et al. | Full-color-sorting metalenses for high-sensitivity image sensors | |
Frey et al. | Color filters including infrared cut-off integrated on CMOS image sensor | |
Yokogawa et al. | IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels | |
US8810808B2 (en) | Determination of optimal diameters for nanowires | |
US9177985B2 (en) | Array of nanowires in a single cavity with anti-reflective coating on substrate | |
JP4995231B2 (en) | Optical filter | |
Hong et al. | Absorptive metasurface color filters based on hyperbolic metamaterials for a CMOS image sensor | |
Chen et al. | Full-color nanorouter for high-resolution imaging | |
Catrysse et al. | Integrated color pixels in 0.18-µ m complementary metal oxide semiconductor technology | |
US9627434B2 (en) | System and method for color imaging with integrated plasmonic color filters | |
JP2009252978A (en) | Solid-state imaging element and manufacturing method thereof | |
US20110216229A1 (en) | Nanostructured spectral filter and image sensor | |
Wen et al. | Multifunctional silicon optoelectronics integrated with plasmonic scattering color | |
Girard-Desprolet et al. | Angular and polarization properties of cross-holes nanostructured metallic filters | |
McCrindle et al. | Infrared plasmonic filters integrated with an optical and terahertz multi‐spectral material | |
Tamang et al. | Color sensing by optical antennas: Approaching the quantum efficiency limit | |
Walls et al. | Automated design, fabrication, and characterization of color matching plasmonic filters | |
Cho et al. | Color arrestor pixels for high-fidelity, high-sensitivity imaging sensors | |
Xiang et al. | Ultrabroadband, high color purity multispectral color filter arrays | |
Chang et al. | Axicon metalens for broadband light harvesting | |
He et al. | Multispectral image sensors using metasurfaces | |
Girard-Desprolet | Plasmon-based spectral filtering with metallic nanostructures for CMOS image sensors | |
Chen et al. | Application of surface plasmon polaritons in cmos digital imaging |