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Yang et al., 2003 - Google Patents

HfO2/HfSi x O y high-K gate stack with very low leakage current for low-power poly-Si gated CMOS application

Yang et al., 2003

Document ID
5471218491443291355
Author
Yang C
Fang Y
Chen S
Wang M
Hou T
Lin Y
Yao L
Chen S
Liang M
Publication year
Publication venue
Electronics Letters

External Links

Snippet

Poly-Si gated NMOSFETs, with HfO2/HfSi x O y gate stacks for CMOS low-power application are reported for the first time. Compared to an SiO2 control sample, the HfO2/HfSi x O y stack with equivalent oxide thickness of about 18 Å exhibits four-orders of magnitude reduction in …
Continue reading at digital-library.theiet.org (other versions)

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