[go: up one dir, main page]

Vidojkovic et al., 2008 - Google Patents

A 1.2 V receiver front-end for multi-standard wireless applications in 65 nm CMOS LP

Vidojkovic et al., 2008

View PDF
Document ID
5274061994944398862
Author
Vidojkovic M
Sanduleanu M
Vidojkovic V
van der Tang J
Baltus P
van Roermund A
Publication year
Publication venue
ESSCIRC 2008-34th European Solid-State Circuits Conference

External Links

Snippet

A low-power low-voltage wide-band inductor-less multi-standard receiver RF front-end in a digital CMOS 65 nm Low Power (LP) process is described. S11 less than-10 dB is measured in the frequency range from 10 MHz up to 5 GHz. The front-end featuring two gain modes …
Continue reading at www.dvdtang.nl (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45197—Pl types
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45704—Indexing scheme relating to differential amplifiers the LC comprising one or more parallel resonance circuits
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/50—Circuits using different frequencies for the two directions of communication
    • H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/10—Means associated with receiver for limiting or suppressing noise or interference induced by transmission
    • H04B1/109—Means associated with receiver for limiting or suppressing noise or interference induced by transmission by improving strong signal performance of the receiver when strong unwanted signals are present at the receiver input

Similar Documents

Publication Publication Date Title
US6674337B2 (en) Concurrent multi-band low noise amplifier architecture
US7266360B2 (en) Low noise amplifier for wireless communications
KR101515766B1 (en) A circuit and method of noise-canceling for differential amplifiers requiring no external matching
Blaakmeer et al. An inductorless wideband balun-LNA in 65nm CMOS with balanced output
AU2013214368B2 (en) Low-noise amplifier
US7372335B2 (en) Wideband circuits and methods
US20120171980A1 (en) Amplifier with On-Chip Filter
Lu et al. A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications
Nguyen et al. A RF CMOS amplifier with optimized gain, noise, linearity and return losses for UWB applications
AU2013214369B2 (en) Noise canceling low-noise amplifier
Vidojkovic et al. A 1.2 V receiver front-end for multi-standard wireless applications in 65 nm CMOS LP
Im et al. A CMOS active feedback wideband single-to-differential LNA using inductive shunt-peaking for saw-less SDR receivers
CN111130464B (en) Ultra-wideband low noise amplifier circuit, radio frequency device and radio frequency signal processing method
Lou et al. A 0.8 GHz–10.6 GHz SDR low-noise amplifier in 0.13-μm CMOS
Kaukovuori et al. Analysis and design of common‐gate low‐noise amplifier for wideband applications
Koolivand et al. A new technique for design CMOS LNA for multi-standard receivers
Szczepkowski et al. Linearity vs. power consumption of CMOS LNAs in LTE systems
Khatri et al. FULLY OPTIMIZED ULTRA WIDEBAND RF RECEIVE RFRONT END
Liu et al. MEMS-enabled dual-band 1.8 & 5-6GHz receiver RF front-end
Rezaei et al. UWB LNA with out-band interference rejection exploiting multistage matching circuit
Devi et al. A review on the low noise amplifier for wireless application
Vidojkovic et al. A 1.2 V inductorless receiver front-end for multi-standard wireless applications
Godara et al. State of the Art for Low-Noise Amplifiers in Wireless Transceivers; two new wideband all-active LNAs in SiGe-BiCMOS technology
He et al. A saw-less direct conversion long term evolution receiver with 25% duty-cycle LO in 130 nm CMOS technology
Magnusson et al. A cross-coupled dual-loop feedback power amplifier driver