Abe et al., 2006 - Google Patents
Error factor in bottom CD measurement for contact hole using CD-SEMAbe et al., 2006
- Document ID
- 514460432748298266
- Author
- Abe H
- Yamazaki Y
- Publication year
- Publication venue
- Metrology, Inspection, and Process Control for Microlithography XX
External Links
Snippet
CD control of hole bottom becomes more difficult with pattern size shrinkage. Since local CD variation of hole patterns is large, CD measurement by CD-SEM is needed for measuring the local CD. Although a technique of observing the hole bottom by CD-SEM has been …
- 238000005259 measurement 0 title abstract description 73
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/305—Contactless testing using electron beams
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission using electron or ion microprobe or incident electron or ion beam
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission using electron or ion microprobe or incident electron or ion beam with incident electron beam
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical means
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3973372B2 (en) | Substrate inspection apparatus and substrate inspection method using charged particle beam | |
| TWI411776B (en) | Method for characterizing identified defects during charged particle beam inspection and application thereof | |
| US6897444B1 (en) | Multi-pixel electron emission die-to-die inspection | |
| US20090039264A1 (en) | Electron microscope | |
| US6828571B1 (en) | Apparatus and methods of controlling surface charge and focus | |
| US7514681B1 (en) | Electrical process monitoring using mirror-mode electron microscopy | |
| KR20160077133A (en) | Detecting ic reliability defects | |
| EP0720216B1 (en) | Linewidth metrology of integrated circuit structures | |
| JP4728361B2 (en) | Substrate inspection apparatus and substrate inspection method using charged particle beam | |
| US6573497B1 (en) | Calibration of CD-SEM by e-beam induced current measurement | |
| US6573498B1 (en) | Electric measurement of reference sample in a CD-SEM and method for calibration | |
| KR101035426B1 (en) | Systems and methods for determining cross-sectional features of structural elements using reference structural elements | |
| US9171765B2 (en) | Inline residual layer detection and characterization post via post etch using CD-SEM | |
| Cepler et al. | Scanning electron microscopy imaging of ultra-high aspect ratio hole features | |
| US7335880B2 (en) | Technique for CD measurement on the basis of area fraction determination | |
| US6952105B2 (en) | Inspection method and apparatus for circuit pattern of resist material | |
| Abe et al. | Error factor in bottom CD measurement for contact hole using CD-SEM | |
| Lorusso et al. | Electron beam metrology for advanced technology nodes | |
| Foucher et al. | Study of 3D metrology techniques as an alternative to cross-sectional analysis at the R&D level | |
| WO2014076831A1 (en) | Semiconductor inspection device, and inspection method using charged particle beam | |
| JP4147233B2 (en) | Electron beam equipment | |
| CN115689980B (en) | Lateral recess measurement in semiconductor samples | |
| Tanaka et al. | CD-bias evaluation and reduction in CD-SEM linewidth measurements | |
| JP4320308B2 (en) | Defect inspection method | |
| Shirasaki et al. | Inline evaluation of MOS capacitor properties using SEM transient signals |