Avigal et al., 2001 - Google Patents
Growth of aligned carbon nanotubes by biasing during growthAvigal et al., 2001
- Document ID
- 5006491296825980865
- Author
- Avigal Y
- Kalish R
- Publication year
- Publication venue
- Applied Physics Letters
External Links
Snippet
Well aligned multiwalled carbon nanotube (CNT) growth was achieved by positively biasing the substrate during growth. Growth was performed in a flowing mixture of 7% CH 4 in Ar onto Co covered Si held at 800° C with and without the presence of an electric field. High …
- 239000002041 carbon nanotube 0 title abstract description 35
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B31/00—Carbon; Compounds thereof
- C01B31/02—Preparation of carbon; Purification; After-treatment
- C01B31/0206—Nanosized carbon materials
- C01B31/022—Carbon nanotubes
- C01B31/0226—Preparation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B31/00—Carbon; Compounds thereof
- C01B31/02—Preparation of carbon; Purification; After-treatment
- C01B31/0206—Nanosized carbon materials
- C01B31/022—Carbon nanotubes
- C01B31/0253—After-treatments
- C01B31/0266—Sorting
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B31/00—Carbon; Compounds thereof
- C01B31/02—Preparation of carbon; Purification; After-treatment
- C01B31/0206—Nanosized carbon materials
- C01B31/0213—Fullerenes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/06—Multi-walled nanotubes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/22—Electronic properties
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Avigal et al. | Growth of aligned carbon nanotubes by biasing during growth | |
Smalley | From dopyballs to nanowires | |
JP3363759B2 (en) | Carbon nanotube device and method of manufacturing the same | |
Sohn et al. | Patterned selective growth of carbon nanotubes and large field emission from vertically well-aligned carbon nanotube field emitter arrays | |
Zhang et al. | Cu-filled carbon nanotubes by simultaneous plasma-assisted copper incorporation | |
US7226663B2 (en) | Method for synthesizing nanoscale structures in defined locations | |
Zhu et al. | Efficient field emission from ZnO nanoneedle arrays | |
Bower et al. | Plasma-induced alignment of carbon nanotubes | |
US6843850B2 (en) | Catalyst-free growth of single-wall carbon nanotubes | |
US20090272490A1 (en) | Method for manufacturing carbon nanotubes | |
JP2007015922A (en) | Electron cyclotron resonance plasma deposition process, device for single-wall carbon nanotube, and nanotube prepared by using the same | |
Ho et al. | Electric field-induced carbon nanotube junction formation | |
JP2007123280A (en) | Carbon nanotubes with ZnO protrusions | |
Rouhi et al. | Three separated growth sequences of vertically-aligned carbon nanotubes on porous silicon: field emission applications | |
Tarntair et al. | High current density field emission from arrays of carbon nanotubes and diamond-clad Si tips | |
Chen et al. | The characterization of boron-doped carbon nanotube arrays | |
KR100935867B1 (en) | Method for producing a multi-layered carbon nanotube radial aggregate | |
Pan et al. | Effect of morphology on field emission properties of carbon nanocoils and carbon nanotubes | |
Jiang et al. | Carbon nanofibers synthesized by decomposition of alcohol at atmospheric pressure | |
Lin et al. | Comparisons on properties and growth mechanisms of carbon nanotubes fabricated by high-pressure and low-pressure plasma-enhanced chemical vapor deposition | |
Yin et al. | Postgrowth processing of carbon nanotube arrays-enabling new functionalities and applications | |
Ren et al. | Large arrays of well-aligned carbon nanotubes | |
Sato et al. | Vertically aligned carbon nanotubes grown by plasma enhanced chemical vapor deposition | |
Srivastava et al. | Effect of substrate morphology on growth and field emission properties of carbon nanotube films | |
US20120019122A1 (en) | Device having aligned carbon nanotube |