[go: up one dir, main page]

Class et al., 2008 - Google Patents

Patent application title: Materials and Optical Devices Based on Group IV Quantum Wells Grown on Si-Ge-Sn Buffered Silicon Inventors: John Kouvetakis (Mesa, AZ …

Class et al., 2008

View HTML
Document ID
4948861446859565292
Author
Class I
USPC A
Publication year

External Links

Snippet

BACKGROUND [0001] It has been known for some time, at least on theoretical grounds, that high quality Si--Ge--Sn alloy systems will possess very interesting material properties, especially when implemented in infrared (IR) devices (such as detectors, sensors or …
Continue reading at www.patentsencyclopedia.com (HTML) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed

Similar Documents

Publication Publication Date Title
US7582891B2 (en) Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon
Kandaswamy et al. GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
Bai et al. Growth of highly tensile-strained Ge on relaxed InxGa1− xAs by metal-organic chemical vapor deposition
Grzybowski et al. Next generation of Ge1− ySny (y= 0.01-0.09) alloys grown on Si (100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission
Kouvetakis et al. New classes of Si-based photonic materials and device architectures via designer molecular routes
Soref et al. Advances in SiGeSn technology
US7598513B2 (en) SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn
KR100932821B1 (en) Germanium-Si Tin-Based Compounds, Molds and Semiconductor Structures
US20110254052A1 (en) Hybrid Group IV/III-V Semiconductor Structures
Roucka et al. Versatile buffer layer architectures based on Ge1− xSnx alloys
WO2005015609A2 (en) Sixsnyge1-x-y and related alloy heterostructures based on si, ge and sn
US8821635B2 (en) Method for growing Si-Ge semiconductor materials and devices on substrates
Gallagher et al. Ge1− x− ySixSny light emitting diodes on silicon for mid-infrared photonic applications
US8063413B2 (en) Tensile strained GE for electronic and optoelectronic applications
Tai et al. Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications
Soref et al. Advances in SiGeSn/Ge technology
Zheng et al. Single-crystalline Ge1-x-y Si x Sn y alloys on Si (100) grown by magnetron sputtering
Huang et al. Crack-free GaAs epitaxy on Si by using midpatterned growth: Application to Si-based wavelength-selective photodetector
Bhat et al. High-Ge-content SiGe alloy single crystals using the nanomembrane platform
KR101060372B1 (en) Growth method of Si-Si semiconductor material and device on substrate
Kouvetakis et al. Synthesis of High Sn Content Ge1–x–y Si x Sn y (0.1< y< 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications
Class et al. Patent application title: Materials and Optical Devices Based on Group IV Quantum Wells Grown on Si-Ge-Sn Buffered Silicon Inventors: John Kouvetakis (Mesa, AZ, US) Jose Menendez (Tempe, AZ, US) John Tolle (Gilbert, AZ, US) John Tolle (Gilbert, AZ, US) Ling Liao (Santa Clara, CA, US) Dean Samara-Rubio (San Jose, CA, US) Assignees: ARIZONA BOARD OF REGENTS, A BODY CORPORATE ACTING
Sun et al. High quality InP epilayers grown on GaAs substrates using metamorphic AlGaInAs buffers by metalorganic chemical vapor deposition
Ryzhak et al. Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence
Liu et al. High-quality Ge/Si0. 4Ge0. 6 multiple quantum wells for photonic applications: growth by reduced pressure chemical vapour deposition and structural characteristics