[go: up one dir, main page]

Prates et al., 2023 - Google Patents

Experimental Comparison of Threshold Voltage Extraction Methods in SOI Nanowire Transistors

Prates et al., 2023

Document ID
4614644271001452241
Author
Prates V
Pavanello M
de Souza M
Publication year
Publication venue
2023 37th Symposium on Microelectronics Technology and Devices (SBMicro)

External Links

Snippet

The threshold voltage is a key parameter for MOSFET modeling and can be extracted by several methods reported in the literature. However, for a given device, different methods result in different extracted values, which may cause doubt about its exact value. This paper …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes; Multistep manufacturing processes therefor characterised by the materials of which they are formed

Similar Documents

Publication Publication Date Title
Esseni et al. An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode
Chung et al. Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs
Sugii et al. Local $ V_ {\rm th} $ Variability and Scalability in Silicon-on-Thin-BOX (SOTB) CMOS With Small Random-Dopant Fluctuation
Janik et al. Analysis of the MOS transistor based on the self-consistent solution to the Schrodinger and Poisson equations and on the local mobility model
Kalna et al. Benchmarking of scaled InGaAs implant-free nanoMOSFETs
Prates et al. Experimental Comparison of Threshold Voltage Extraction Methods in SOI Nanowire Transistors
Gnani et al. Effects of high-$\kappa $(HfO $ _2 $) gate dielectrics in double-gate and cylindrical-nanowire FETs scaled to the ultimate technology nodes
Cai et al. A new technique for mobility extraction in MOSFETs in the presence of prominent gate oxide trapping: Application to InGaAs MOSFETs
De Souza et al. Experimental assessment of variability in junctionless nanowire nMOS transistors
Balestra et al. Modeling of low‐frequency noise in advanced CMOS devices
US6731130B1 (en) Method of determining gate oxide thickness of an operational MOSFET
Kushwaha et al. Predictive effective mobility model for FDSOI transistors using technology parameters
Borchert et al. Hot-electron effects on short-channel MOSFETs determined by the piezoresistance effect
Youhanis et al. Reliability Evaluation of Hot Carrier Injection Effects on MOSFET Devices
De Souza et al. Experimental Evaluation of 7-Level Stacked Nanosheet SOI MOSFETs Analog Parameters
Khakifirooz Transport enhancement techniques for nanoscale MOSFETs
Cretu et al. In-depth understanding of the key contributors to the total flicker noise in advanced logic devices
Ccoto et al. Analysis of Fin Width Influence on the Carrier´ s Mobility of Nanowire MOSFETs
Ghibaudo Electrical characterization of FDSOI CMOS devices
da Silva et al. Analysis of Variability in Transconductance and Mobility of Nanowire Transistors
da Silva et al. Extraction of Drain Current Variability Components in Junctionless Nanowire Transistors
Trevisoli et al. Electrical Channel Length in the Subthreshold Operation of Junctionless Nanowire Transistors
Junior et al. Experimental analysis of negative temperature bias instabilities degradation in junctionless nanowire transistors
Rengel et al. A physically based investigation of the small-signal behaviour of bulk and fully-depleted silicon-on-insulator MOSFETs for microwave applications
Zhang et al. A unified charge-based model for symmetric DG MOSFETs valid for both heavily doped body and undoped channel