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Garba-Seybou et al., 2024 - Google Patents

Universal dielectric breakdown modeling under off-state TDDB for ultra-scaled device from 130nm to 28nm nodes and beyond

Garba-Seybou et al., 2024

Document ID
4013700294728123943
Author
Garba-Seybou T
Bravaix A
Federspiel X
Hai J
Diouf C
Cacho F
Publication year
Publication venue
IEEE Transactions on Device and Materials Reliability

External Links

Snippet

This study investigates the commonality Of TDDB under Off-state conditions across a range of CMOS nodes, from 130nm to ultra-scaled devices, ie, 28nm FDSOI CMOS. To achieve this, Off-mode gate-oxide breakdown is analyzed under non-uniform electric field to …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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    • H01L29/66409—Unipolar field-effect transistors
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    • H01L29/66568—Lateral single gate silicon transistors
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
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