US20240229275A1 - Nano-twinned copper foil, electronic element and methods for manufacturing the same - Google Patents
Nano-twinned copper foil, electronic element and methods for manufacturing the same Download PDFInfo
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- US20240229275A1 US20240229275A1 US18/456,923 US202318456923A US2024229275A1 US 20240229275 A1 US20240229275 A1 US 20240229275A1 US 202318456923 A US202318456923 A US 202318456923A US 2024229275 A1 US2024229275 A1 US 2024229275A1
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- nano
- twinned
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- copper foil
- twinned copper
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 132
- 239000011889 copper foil Substances 0.000 title claims abstract description 88
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 93
- 229910052802 copper Inorganic materials 0.000 claims description 45
- 239000010949 copper Substances 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 238000009713 electroplating Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 238000007747 plating Methods 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910001080 W alloy Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 4
- 235000019592 roughness Nutrition 0.000 claims 1
- 239000010410 layer Substances 0.000 description 57
- 238000010884 ion-beam technique Methods 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 238000001887 electron backscatter diffraction Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 108010010803 Gelatin Proteins 0.000 description 1
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical class CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- BSXVKCJAIJZTAV-UHFFFAOYSA-L copper;methanesulfonate Chemical compound [Cu+2].CS([O-])(=O)=O.CS([O-])(=O)=O BSXVKCJAIJZTAV-UHFFFAOYSA-L 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/04—Wires; Strips; Foils
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/615—Microstructure of the layers, e.g. mixed structure
- C25D5/617—Crystalline layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0614—Strips or foils
Definitions
- the object of the present invention is to provide a nano-twinned copper foil, both surfaces of the nano-twinned copper foil with the (111) preferred direction, and thus it may be applied to the bonding of the electronic components.
- a nano-twinned copper foil provided in the present invention comprises: plural twinned grains, wherein at least part of the plural twinned grains are formed by stacking plural nano-twins along a [111] crystal axis; wherein the nano-twinned copper foil has a first surface and a second surface opposite to the first surface, and 80% or more of areas of the first surface and the second surface respectively exposes (111) planes of the nano-twins.
- the first surface and the second surface of the nano-twinned copper foil of the present invention further have low roughness.
- both of the front and back surfaces of the nano-twinned copper foil of the present invention are surfaces having (111) preferred direction surfaces, even both of the back and front surfaces have low roughness.
- the nano-twinned copper foil of the present invention acts similar to a double-sided tape in order to bond, using the property of high diffusion rate of the (111) plane, two substrates at low temperature and/or in a short time. Compared with copper or silver sintering-bonding, using the nano-twinned copper foil of the present invention for bonding may produce fewer holes on the bonding surface, and the obtained electronic components may have lower electrical resistance or thermal resistance.
- the roughness of the first surface and the second surface of the nano-twinned copper foil may be less than or equal to 20 nm, for example, may be respectively in a range from 0.1 nm to 20 nm, 0.5 nm to 20 nm, 1 nm to 20 nm, 2 nm to 20 nm, 3 nm to 20 nm, 4 nm to 20 nm, or 5 nm to 20 nm.
- more than 80% of the volume of the nano-twinned copper foil may include plural twinned grains. In one embodiment, for example, 80% to 99%, 80% to 95%, 85 to 95%, or 90% to 95% of the volume of the nano-twinned copper foil may include plural twinned grains.
- the present invention is not limited thereto.
- At least part of the plural twinned grains of the nano-twinned copper foil may be columnar twinned grains, wherein the columnar twinned grains may be formed by stacking plural nano-twins along a [111] crystal axis within ⁇ 15 degrees, and the angle included between the stacking direction of the at least part of the plural twinned grains and the thickness direction of the nano-twinned copper foil is in a range from 0 degree to 20 degrees. In one embodiment, more than 80% (for example, 80% to 99%, 80% to 95%, 85 to 95%, or 90% to 95%) of the plural twinned grains are columnar twinned grains.
- the surface of the nano-twinned copper foil may have a preferred direction of (111).
- the twinned grain of the nano-twinned copper foil has a significant ratio of thickness to diameter for the twinned grain (for example, the thickness is significantly greater than the diameter)
- the twinned grain is a columnar twinned grain.
- At least part of the twinned grains may be connected to each other.
- 50%, 60%, 70%, 80%, 90% or more than 95% of the twinned grains may be connected to each other interconnected.
- the thickness of the nano-twinned copper foil may be adjusted according to the needs. In one embodiment, the thickness of the nano-twinned copper foil may be, for example, in a range from 10 ⁇ m to 500 ⁇ m, 10 ⁇ m to 400 ⁇ m, 10 ⁇ m to 300 ⁇ m, 10 ⁇ m to 200 ⁇ m, or 10 ⁇ m to 100 ⁇ m. However, the present invention is not limited thereto.
- the diameters of the twinned grains may be in a range from 0.1 ⁇ m to 50 ⁇ m, respectively.
- the diameter of the twinned grains may be, for example, in a range from 0.1 ⁇ m to 45 ⁇ m, 0.1 ⁇ m to 40 ⁇ m, 0.1 ⁇ m to 35 ⁇ m, 0.5 ⁇ m to 35 ⁇ m, 0.5 ⁇ m to 30 ⁇ m, 1 ⁇ m to 30 ⁇ m, 1 ⁇ m to 25 ⁇ m, 1 ⁇ m to 20 ⁇ m, 1 ⁇ m to 15 ⁇ m or 1 ⁇ m to 10 ⁇ m.
- the diameter of the twinned grains may be a length measured in a direction substantially perpendicular to the twin direction of the twinned grains.
- the diameter of the twinned grains may be a length (such as maximum length) measured in a direction substantially perpendicular to the stacking direction of the twin planes of the twinned grains (that is, the direction in which the twin plane extends).
- the thickness of the twinned grains may be a thickness measured in the twin direction of the twinned grains.
- the thickness of the twinned grains (such as columnar twinned grains) may be a thickness (such as maximum thickness) measured in the stacking direction of the twin planes of the twinned grains.
- a section of the nano-twinned copper foil may be used to measure the angle included between the twin direction of the twinned grains and the thickness direction of the nano-twinned copper foil.
- a section of the nano-twinned copper foil may also be used to measure the thickness of the nano-twinned copper foil, the diameter and thickness of the twinned grains, and other characteristics.
- the surface (for example, the first surface or the second surface) of the nano-twinned copper foil may also be used to measure the diameter and thickness of the twinned grains.
- the measurement method is not particularly limited, and the measurement may be performed by scanning electron microscope (SEM), transmission electron microscope (TEM), focus ion beam (FIB) or other suitable means.
- the present invention further provides a method for preparing the aforementioned nano-twinned copper foil, comprising the following steps: providing an electroplating device, comprising an anode, a cathode, a plating solution and a power supply, wherein the power supply is connected to the cathode and the anode respectively, and the cathode and the anode are immersed in the plating solution; performing an electroplating process by using the power supply to grow a nano-twinned copper layer on the cathode; and removing the cathode and polishing a surface (lower surface) of the nano-twinned copper layer to obtain the nano-twinned copper foil as described above, wherein the surface is the surface of the nano-twinned copper foil that is in contact with the cathode before removing the cathode.
- the titanium-tungsten bonding layer may comprise a titanium-tungsten alloy represented by the following formula (I):
- the thickness of the titanium-tungsten bonding layer may be in a range from 100 nm to 200 nm. When the thickness of the titanium-tungsten bonding layer is less than 100 nm, it is difficult to grow twinned grains with a (111) preferred direction. When the thickness of the titanium-tungsten bonding layer is greater than 200 nm, it is difficult to separate the nano-twinned copper layer from the cathode (including the substrate and the titanium-tungsten bonding layer).
- the polishing of the two surfaces (i.e., upper and lower surfaces) of the nano-twinned copper layer may also be performed in the same polishing process.
- direct current electroplating, pulse electroplating, or alternate use of direct current electroplating and pulse electroplating may be used to form the nano-twinned copper layer.
- the present invention further provides the application to the electronic components using the same and the method for preparing the same.
- the method for preparing an electronic component of the present invention comprises the following steps: providing a first substrate and a second substrate; disposing a bonding unit between the first substrate and the second substrate, and bonding the first substrate and the second substrate by using the bonding unit to form an electronic component, wherein the bonding unit is the nano-twinned copper foil as described above.
- the electronic component of the present invention when using the nano-twinned copper foil provided by the present invention to perform the bonding of the first substrate and the second substrate, it achieves excellent bonding quality with almost no gaps at low temperature and in a short time since the two surfaces of the nano-twinned copper foil of the present invention have a highly (111) preferred direction and low roughness.
- the first substrate and the second substrate may be respectively a metal substrate, wherein the material of the metal substrate may comprise at least one selected from the group consisting of copper, silver, gold, palladium, nickel and platinum.
- the first substrate and the second substrate may be respectively a substrate on which a metal layer is formed, wherein the substrate may be a silicon substrate, a glass substrate, a quartz substrate, a plastic substrate, a ceramic substrate or a circuit board, and the material of the metal layer may comprise at least one selected from the group consisting of copper, silver, gold, palladium, nickel and platinum.
- the bonding may be performed at elevated temperature, wherein the bonding temperature is subject to no limitation, provided that the purpose of bonding may be achieved without affecting the structures of the first substrate and the second substrate.
- the bonding may be performed at a low temperature of 150° C. to 400° C., 150° C. to 350° C., or 200° C. to 350° C.
- the bonding time is subject to no limitation, provided that the bonding between the first substrate and the second substrate may be completed.
- the bonding time may be 0.5 hour to 5 hours, 0.5 hour to 4 hours, 0.5 hour to 3 hours, 0.5 hour to 2 hours or 0.5 hour to 1 hour.
- FIG. 1 A to FIG. 1 B are schematic cross-sectional views of the nano-twinned copper foil prepared in Example 1 of the present invention.
- FIG. 3 A and FIG. 3 B are diffraction images of the electron backscatter diffraction for the upper surface and the lower surface of the nano-twinned copper foil according to Example 1 of the present invention, respectively.
- FIG. 7 A to FIG. 7 B are the ion and electron images of the focus ion beam of the electronic component according to Example 3 of the present invention, respectively.
- FIG. 2 is an image of a focus ion beam of the nano-twinned copper of the present embodiment.
- FIG. 3 A and FIG. 3 B are diffraction charts of the electron backscatter diffraction for the upper surface and the lower surface of the nano-twinned copper foil of the present embodiment, respectively.
- FIG. 4 A and FIG. 4 B are atomic force microscope images of the upper surface and the lower surface of the nano-twinned copper foil of the present embodimen, respectively.
- more than 95% of the twinned grains in the nano-twinned copper foil had the thickness ranging from 1 ⁇ m to 10 ⁇ m. Furthermore, no transition layer was found at the bottom of the nano-twinned copper foil, ensuring that the transition layer was removed, and leaving a nano-twinned structure with a high (111) preferred direction.
- the measurement results of the atomic force microscope showed that the nano-twinned copper foil prepared in the present embodiment had a roughness of 18.9 nm and 7.7 nm respectively for the upper and lower surfaces, representing that the nano-twinned copper foil of the present embodiment had an extremely low roughness.
- FIG. 5 A to FIG. 5 B are schematic cross-sectional views of the electronic components prepared in the present embodiment.
- a first substrate 21 and a second substrate 22 were provided; a bonding unit 23 was disposed between the first substrate 21 and the second substrate 22 , and the first substrate 21 and the second substrate 22 were bonded by the bonding unit 23 to form the electronic component of the present embodiment, as shown in FIG. 5 B .
- the first substrate 21 and the second substrate 22 were respectively silicon substrates with a copper seed layer disposed thereon, and the surfaces thereof had a roughness of 3.1 nm and near 100% of (111); and, the bonding unit 23 was the nano-twinned copper foil prepared in Example 1.
- the bonding was performed by bonding the surface having the copper seed layer to the bonding unit 23 .
- the bonding was performed at 250° C. and 35 MPa for 1 hour.
- the ion and electron images of the focus ion beam for the electronic component obtained after the bonding were shown in FIG. 6 A and FIG. 6 B .
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- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
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- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW112100392A TWI850951B (zh) | 2023-01-05 | 2023-01-05 | 奈米雙晶銅箔、包含其的電子元件及其製備方法 |
| TW112100392 | 2023-01-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20240229275A1 true US20240229275A1 (en) | 2024-07-11 |
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ID=91762246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US18/456,923 Pending US20240229275A1 (en) | 2023-01-05 | 2023-08-28 | Nano-twinned copper foil, electronic element and methods for manufacturing the same |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20240229275A1 (zh) |
| TW (1) | TWI850951B (zh) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI490962B (zh) * | 2013-02-07 | 2015-07-01 | 國立交通大學 | 電性連接結構及其製備方法 |
| TWI686518B (zh) * | 2019-07-19 | 2020-03-01 | 國立交通大學 | 具有奈米雙晶銅之電連接結構及其形成方法 |
| TWI709667B (zh) * | 2019-12-06 | 2020-11-11 | 添鴻科技股份有限公司 | 奈米雙晶銅金屬層及其製備方法及包含其的基板 |
| US11384446B2 (en) * | 2020-08-28 | 2022-07-12 | Macdermid Enthone Inc. | Compositions and methods for the electrodeposition of nanotwinned copper |
| TWI746383B (zh) * | 2021-03-05 | 2021-11-11 | 國立陽明交通大學 | 摻雜金屬元素的奈米雙晶銅金屬層、包含其之基板及其製備方法 |
-
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- 2023-01-05 TW TW112100392A patent/TWI850951B/zh active
- 2023-08-28 US US18/456,923 patent/US20240229275A1/en active Pending
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| Publication number | Publication date |
|---|---|
| TWI850951B (zh) | 2024-08-01 |
| TW202428386A (zh) | 2024-07-16 |
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