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US20080011936A1 - Imaging sensor having microlenses of different radii of curvature - Google Patents

Imaging sensor having microlenses of different radii of curvature Download PDF

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Publication number
US20080011936A1
US20080011936A1 US11/485,676 US48567606A US2008011936A1 US 20080011936 A1 US20080011936 A1 US 20080011936A1 US 48567606 A US48567606 A US 48567606A US 2008011936 A1 US2008011936 A1 US 2008011936A1
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US
United States
Prior art keywords
image sensor
curvature
microlens
radius
microlenses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/485,676
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English (en)
Inventor
Chin-Chen Kuo
Wu-Chieh Liu
Hsiao-Wen Lee
Bii-Cheng Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
VisEra Technologies Co Ltd
Original Assignee
VisEra Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by VisEra Technologies Co Ltd filed Critical VisEra Technologies Co Ltd
Priority to US11/485,676 priority Critical patent/US20080011936A1/en
Assigned to VISERA TECHNOLOGIES COMPANY LTD reassignment VISERA TECHNOLOGIES COMPANY LTD ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHANG, BIL-CHENG, KUO, CHIN-CHEN, LEE, HSIAO-WEN, LIU, WU-CHIEH
Priority to TW096112690A priority patent/TWI342069B/zh
Priority to CN2007101009709A priority patent/CN101106145B/zh
Publication of US20080011936A1 publication Critical patent/US20080011936A1/en
Priority to US12/288,257 priority patent/US7812302B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

Definitions

  • This invention relates to an image sensor, and more particularly to an image sensor having microlenses of at least two different radii of curvature, and to an image sensor having an asymmetrical microlens.
  • Digital imaging devices have been widely used in many electronic products nowadays. They are used in, for example, digital cameras, digital video recorders, cellular phones with photographing function, safety-control monitors, etc.
  • a digital imaging device usually includes an image sensor chip, such as a CCD image sensor chip or a CMOS image sensor chip.
  • an image sensor chip usually includes a layer of multiple microlenses, so that incident light may better focus on a focal plane, i.e., within a photodiode layer.
  • the photodiode layer receives photons and generates electrical signals thereby.
  • FIG. 1 shows a cross-sectional view of a conventional image sensor.
  • the structure includes a bottom substrate 11 , a photodiode layer 12 , an interconnection layer 13 (shown as one metal layer for simplicity, but may include multiple metal layers), a passivation layer 14 , a color filter layer 15 which includes multiple red ( 15 R), green ( 15 G) and blue (not shown) segments, a spacer layer 16 , and a microlens layer 17 which includes multiple microlenses 171 for focusing incident light onto the interface between the photodiode layer 12 and the substrate 11 . Layers above the microlens layer 17 , such as lens, package and bond pad layers, etc., are omitted for simplicity.
  • the conventional method for making such an image sensor with microlenses is to first form a semi-finished substrate with layers 11 - 16 by conventional semiconductor process steps, and then coat a photoresist layer on the layer 16 .
  • the photoresist layer is exposed according to a pattern on a photomask, and developed to form multiple square segments 172 as shown in FIG. 2 .
  • a reflow step is taken, that is, the semi-finished substrate with the photoresist layer thereon is subject to a temperature of above 150 degree centigrade for 10 minutes, so that the photoresist layer is partially melted; due to viscosity of the photoresist material, the melted photoresist layer has the contour as the microlenses 171 shown in FIG. 1 .
  • the substrate is cooled down to form solid microlenses 171 .
  • the above-mentioned conventional image sensor has the following drawback.
  • the microlenses 171 are all formed of the same radius of curvature.
  • light projected onto microlenses at different locations in particular in an image sensor for use in a medium to large size digital imaging device (mega pixels or above), may have different incident angles. More specifically, as shown in FIG. 3 , light vertically projected onto the microlenses at the center area is received by the microlenses at the peripheral area with a tilt angle, causing a vertical shift of focus.
  • the spot sizes 181 at the peripheral area are not satisfactory, and the sensitivity of the image sensor is reduced.
  • U.S. Pat. No. 6,417,022 discloses a method for producing a microlens with a long focal length, to cope with thick metal layer total thickness due to increased number of metal layers.
  • all of the microlenses on a chip are of the same radius of curvature. This cited patent does not describe any solution to the above-mentioned drawback shown in FIG. 3 .
  • a first object of the present invention is to provide an image sensor comprising at least two microlenses having two different radii of curvature respectively, so as to improve the sensitivity of the image sensor.
  • a second object of the present invention is to provide an image sensor comprising at least one microlens having an asymmetrical lens structure.
  • a third object of the present invention is to provide methods for making the above-mentioned image sensors.
  • the present invention provides an image sensor comprising at least two microlenses having two different radii of curvature, wherein a microlens having a smaller radius of curvature may be arranged at a central area of the image sensor, and a microlens having a larger radius of curvature may be arranged at a peripheral area of the image sensor. Or, a microlens having a smaller radius of curvature may be arranged at a location corresponding to a first color pixel, and a microlens having a larger radius of curvature may be arranged at a location corresponding to a second color pixel.
  • the present invention also provides an image sensor comprising at least one microlens having an asymmetrical lens structure, which may preferably be arranged at a peripheral location of the image sensor.
  • the present invention further provides a method for making an image sensor, which comprises: providing a semi-finished substrate; coating a photoresist material on the semi-finished substrate; patterning the photoresist material into a plurality of subsets, including at least a first subset and a second subset having different patterns from each other; and reflowing the photoresist material wherein the first subset and the second subset form different contours.
  • the patterns of the first subset and the second subsets preferably have different clear ratios.
  • the present invention also provides a method for making an image sensor, which comprises: providing a semi-finished substrate; coating a photoresist material on the semi-finished substrate; patterning the photoresist material into a plurality of subsets, in which at least one of the subsets includes multiple cavities distributed asymmetrically along one horizontal dimension; and reflowing the photoresist material wherein the at least one subset forms an asymmetrical contour.
  • FIG. 1 shows a cross-sectional view of a conventional image sensor
  • FIG. 2 illustrates how the microlenses in the conventional image sensor are made
  • FIG. 3 shows the drawback of the conventional image sensor that there is defocus issue at the peripheral area due to oblique incident light
  • FIGS. 4(A) and 4(B) are cross-sectional views showing a first preferred embodiment according to the present invention, and FIG. 4(C) is a top view corresponding to FIG. 4(B) ;
  • FIGS. 5(A)-5(D) show a second preferred embodiment according to the present invention, wherein FIGS. 5(A) and 5(B) are cross-sectional views taken along different cross-section lines of the same image sensor, and FIG. 5(C) is a cross-sectional view taken along the line C-C of FIG. 5(D) ;
  • FIGS. 6(A) and 6(B) are cross-sectional views showing a third preferred embodiment according to the present invention, and FIG. 6(C) is a top view corresponding to FIG. 6(B) ; and
  • FIGS. 7(A)-7(C) show how light focuses better on the focal plane through the asymmetrical microlens.
  • FIGS. 4(A) and (B) are cross-sectional views of a first preferred embodiment according to the present invention
  • FIG. 4(C) is a top view corresponding to FIG. 4(B)
  • the left side of the figures shows the structure of an image sensor at its central area
  • the right side of the figures shows the structure of the image sensor at its peripheral area.
  • the microlenses 211 at the central area of the image sensor have a smaller radius of curvature than that of the microlenses 212 at the peripheral area.
  • the radius of curvature of the microlenses at the central area is preferably in the range from about 2.00 to about 2.20, while the radius of curvature of the microlenses at the peripheral area is preferably in the range from about 2.35 to about 2.55.
  • the structure shown in FIG. 4(A) may be achieved by reducing the volume of the photoresist material forming microlenses 212 at the peripheral area as compared with the volume of the photoresist material forming microlenses 211 at the central area.
  • a semi-finished substrate including layers 11 - 16 is first provided.
  • a photoresist material is coated on the semi-finished substrate to form a photoresist layer 21 .
  • the central area and the peripheral areas are exposed with different patterns, and developed accordingly.
  • the photoresist material at the peripheral area forms multiple squares or rectangles 202 , each of which has several arrays of cavities 232 .
  • the cavities 232 serve to reduce the volume of the photoresist material in each square or rectangle 202 .
  • the cavities 232 are shown to have a uniform square shape and are aligned one another, it is apparent that they do not necessarily have to be so. It suffices that the cavities 232 help to reduce the volume of the photoresist material, regardless of the shape and arrangement thereof.
  • the cavities 232 in this square or rectangle 202 should preferably be arranged symmetrically.
  • the substrate with the developed squares or rectangles 201 and 202 is subject to a temperature above 150 degree centigrade, so that the squares or rectangles 201 and 202 are melted. Thereafter, the substrate is cooled down, and the microlenses 211 and 212 are formed as shown in FIG. 4(A) .
  • the image sensor provides a better optical performance because light incident to the peripheral area of the image sensor focuses better onto the focal plane.
  • FIGS. 5(A)-5(D) A second embodiment according to the present invention is shown in FIGS. 5(A)-5(D) .
  • FIGS. 5(A) and 5(B) are cross-sectional views taken along different cross-section lines of the same image sensor, illustrating the contours of microlenses for red, green and blue pixels, respectively. As shown in FIGS.
  • the microlenses for red pixels have the smallest radius of curvature; the microlenses for green pixels have the next smallest radius of curvature; while the microlenses for blue pixels have the largest radius of curvature.
  • Such an arrangement may be applied alone, or together with the first embodiment described above; that is, it may be arranged so that the microlenses for red pixels have the same smallest radius of curvature throughout the image sensor, or, the microlenses for red pixels at the central area have a smaller radius of curvature than that of the microlenses for red pixels at the peripheral area, and so are the microlenses for the green and blue pixels.
  • the microlenses for red pixels have a radius of curvature in the range from about 2.02 to 2.12 at the central area, and in the range from about 2.37 to 2.47 at the peripheral area;
  • the microlenses for green pixels have a radius of curvature in the range from about 2.05 to 2.15 at the central area, and in the range from about 2.40 to 2.50 at the peripheral area;
  • the microlenses for blue pixels have a radius of curvature in the range from about 2.08 to 2.18 at the central area, and in the range from about 2.45 to 2.55 at the peripheral area.
  • the microlenses for red pixels preferably have a radius of curvature of about 0.01 to 0.06 less than that of the microlenses for green pixels, and the microlenses for blue pixels preferably have a radius of curvature of about 0.01 to 0.06 more than that of the microlenses for green pixels.
  • the squares or rectangles 303 corresponding to blue pixels have a largest total cavity area; the squares or rectangles 302 corresponding to green pixels have a less large total cavity area; and the squares or rectangles 301 corresponding to red pixels have no cavity (as shown) or have a smallest total cavity area (not shown).
  • the squares or rectangles 302 and 303 have the same number of cavities 332 and 333 , respectively, while the cavities 333 are larger than the cavities 332 .
  • other arrangements are also possible, such as that the cavities 332 and 333 are of the same size, but the squares or rectangles 303 include more cavities than the squares or rectangles 302 .
  • the squares or rectangles 303 have a largest total cavity area (clear ratio); the squares or rectangles 302 have a less large total cavity area; and the squares or rectangles 301 have no cavity or have a smallest total cavity area.
  • the substrate with the developed squares or rectangles 301 , 302 and 303 is subject to a temperature above 150 degree centigrade, so that the squares or rectangles 301 , 302 and 303 are melted. Thereafter, the substrate is cooled down, and the microlenses 311 , 312 and 313 are formed as shown in FIGS. 5(A) and 5(B) .
  • the image sensor With the structure shown in FIGS. 5(A) and 5(B) , whether applied together with the first embodiment or not, the image sensor provides a better optical performance because different wavelengths of light are compensated; different components of light incident to the image sensor may focus better.
  • FIGS. 6(A)-6(C) A third embodiment according to the present invention is shown in FIGS. 6(A)-6(C) .
  • asymmetrical microlenses may be provided at an area where it is likely to receive oblique incident light, such as the peripheral area. Or, it may be arranged so that all the microlenses in an image sensor are asymmetrical, if desired.
  • the microlenses 412 have an asymmetrical contour (i.e., asymmetrical along the cross-section line, in which the left side of each microlens 412 has a smaller radius of curvature than that of its right side the microlenses 412 may be symmetrical if viewed from a different angle).
  • Such an asymmetrical lens structure serve to better focus oblique incident light.
  • a symmetrical lens does well in focusing vertically incident light, but is not so well in focusing oblique light.
  • 7 (C) light incident from the left side focuses better onto the focal plane through the asymmetrical microlens 412 .
  • FIGS. 6(B) and 6(C) wherein FIG. 6(C) is a top view corresponding to FIG. 6(B) , a semi-finished substrate including layers 11 - 16 is first provided. Next, a layer of photoresist material is coated on the semi-finished substrate to form a photoresist layer 41 . The photoresist layer 41 are exposed and developed to form multiple squares or rectangles 402 . As shown in FIG. 6(C) , in this embodiment, each square or rectangle 402 includes several arrays of cavities 432 , in which the cavities 432 at the right side of each square or rectangle 402 are denser.
  • the substrate with the developed squares or rectangles 402 is subject to a temperature above 150 degree centigrade, so that the squares or rectangles 402 are melted. Thereafter, the substrate is cooled down, and the asymmetrical microlenses 412 are formed as shown in FIGS. 6(A) and 7(C) .
  • the third embodiment may be applied alone, or together with either or both of the first embodiment and the second embodiment.
  • the asymmetrical microlens helps to better focus oblique light.

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US11/485,676 2006-07-14 2006-07-14 Imaging sensor having microlenses of different radii of curvature Abandoned US20080011936A1 (en)

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US11/485,676 US20080011936A1 (en) 2006-07-14 2006-07-14 Imaging sensor having microlenses of different radii of curvature
TW096112690A TWI342069B (en) 2006-07-14 2007-04-11 Image sensor
CN2007101009709A CN101106145B (zh) 2006-07-14 2007-04-28 影像传感器及其制造方法
US12/288,257 US7812302B2 (en) 2006-07-14 2008-10-17 Imaging sensor having microlenses of different radii of curvature

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US20090078855A1 (en) * 2006-07-14 2009-03-26 Visera Technologies Company Ltd., R.O.C. Imaging sensor having microlenses of different radii of curvature
US20090261439A1 (en) * 2008-04-17 2009-10-22 Visera Technologies Company Limited Microlens array and image sensing device using the same
US20090305453A1 (en) * 2008-06-10 2009-12-10 Visera Technologies Company Limited Method of fabricating image sensor device
US7687757B1 (en) * 2009-01-29 2010-03-30 Visera Technologies Company Limited Design of microlens on pixel array
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US20100123069A1 (en) * 2008-11-17 2010-05-20 Omnivision Technologies, Inc. Backside illuminated imaging sensor with improved angular response
US7687757B1 (en) * 2009-01-29 2010-03-30 Visera Technologies Company Limited Design of microlens on pixel array
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US20120043634A1 (en) * 2010-08-17 2012-02-23 Canon Kabushiki Kaisha Method of manufacturing microlens array, method of manufacturing solid-state image sensor, and solid-state image sensor
US9372286B2 (en) 2013-04-11 2016-06-21 Omnivision Technologies, Inc. Method of forming dual size microlenses for image sensors
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CN104570170A (zh) * 2013-10-09 2015-04-29 佳能株式会社 光学元件阵列、光电转换装置以及图像拾取系统
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US20090078855A1 (en) 2009-03-26
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US7812302B2 (en) 2010-10-12
TWI342069B (en) 2011-05-11
TW200810102A (en) 2008-02-16

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