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TWM658640U - Illuminated keyswitch structure - Google Patents

Illuminated keyswitch structure Download PDF

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Publication number
TWM658640U
TWM658640U TW113202047U TW113202047U TWM658640U TW M658640 U TWM658640 U TW M658640U TW 113202047 U TW113202047 U TW 113202047U TW 113202047 U TW113202047 U TW 113202047U TW M658640 U TWM658640 U TW M658640U
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TW
Taiwan
Prior art keywords
light
emitting
chip package
hole
key structure
Prior art date
Application number
TW113202047U
Other languages
Chinese (zh)
Inventor
古士永
許文明
Original Assignee
達方電子股份有限公司
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Publication date
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Publication of TWM658640U publication Critical patent/TWM658640U/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H13/00Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch
    • H01H13/70Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch having a plurality of operating members associated with different sets of contacts, e.g. keyboard
    • H01H13/83Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch having a plurality of operating members associated with different sets of contacts, e.g. keyboard characterised by legends, e.g. Braille, liquid crystal displays, light emitting or optical elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H13/00Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch
    • H01H13/70Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch having a plurality of operating members associated with different sets of contacts, e.g. keyboard
    • H01H13/702Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch having a plurality of operating members associated with different sets of contacts, e.g. keyboard with contacts carried by or formed from layers in a multilayer structure, e.g. membrane switches
    • H01H13/705Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch having a plurality of operating members associated with different sets of contacts, e.g. keyboard with contacts carried by or formed from layers in a multilayer structure, e.g. membrane switches characterised by construction, mounting or arrangement of operating parts, e.g. push-buttons or keys

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  • Push-Button Switches (AREA)
  • Switch Cases, Indication, And Locking (AREA)
  • Input From Keyboards Or The Like (AREA)

Abstract

An illuminated keyswitch structure includes a base plate, a keycap, and a light-emitting die package. The keycap is movably disposed above the base plate in a vertical direction. The light-emitting die package is disposed under the keycap and includes a plurality of light-emitting dies. The plurality of light-emitting dies are monochromatic light-emitting dies. Therein, among the plurality of light-emitting dies, three light-emitting dies that are adjacently arranged in an arrangement direction perpendicular to the vertical direction emit light of different colors. The arrangement direction is respectively parallel to a long side of each of the three adjacent light-emitting dies.

Description

發光按鍵結構 Luminous button structure

本創作涉及一種按鍵結構,尤其涉及一種發光按鍵結構。 This creation relates to a key structure, and in particular to a luminous key structure.

一對一的發光按鍵通常於每顆鍵帽下方設置一光源,光源用於發射光線形成背光。當鍵帽具有可透光區對應文字或符號等字元時,對應的光源通常會正對該字元設置並朝向該字元發射光線。於實際產品中,光源至鍵帽的可透光區之間常常存在著其他構件,例如支架、底板、電路板等,使得光線傳遞路徑受到干擾,造成鍵帽的字元色彩不均勻。在光源具有多種顏色的情況下,也會發生色彩偏差嚴重的問題。 One-to-one illuminated keys usually have a light source under each keycap, which is used to emit light to form backlight. When the keycap has a light-transmitting area corresponding to a character such as text or a symbol, the corresponding light source is usually set directly opposite the character and emits light toward the character. In actual products, there are often other components between the light source and the light-transmitting area of the keycap, such as a bracket, a base plate, a circuit board, etc., which interferes with the light transmission path and causes uneven color of the keycap characters. When the light source has multiple colors, serious color deviation problems will also occur.

鑑於先前技術中的問題,本創作的目的在於提供一種發光按鍵結構,利用具有複數個發光晶粒的單一發光晶粒封裝體,以使每一個發光晶粒發出的光線能以相近的路徑傳遞。 In view of the problems in the prior art, the purpose of this invention is to provide a light-emitting key structure, using a single light-emitting die package with multiple light-emitting dies, so that the light emitted by each light-emitting die can be transmitted in a similar path.

根據本創作之一實施例之一發光按鍵結構包含一底板、一鍵帽及一發光晶粒封裝體。該鍵帽於一垂直方向上可移動地設置於該底板上方。該發光晶粒封裝體設置於該鍵帽下方且包含複數個發光晶粒。該複數個發光晶粒均為單色發光晶粒。其中,該複數個發光晶粒中於垂直於該垂直方向之一排列方向上排列的相鄰三個發光晶粒發射三種不同色光,該排列方向與該相鄰三個發光晶粒的長邊分別平行。藉此,該複數個發光晶粒於單一封裝內,可使每一個發光晶粒發出的光線能以相近的路徑傳遞。又,該複數個發光晶粒透過排列方式降低同色光的發光粒晶過度集中,亦有助於光線照射該鍵帽的均勻度。 According to an embodiment of the present invention, a light-emitting key structure includes a base plate, a key cap and a light-emitting chip package. The key cap is movably disposed above the base plate in a vertical direction. The light-emitting chip package is disposed below the key cap and includes a plurality of light-emitting chips. The plurality of light-emitting chips are all single-color light-emitting chips. Among the plurality of light-emitting chips, three adjacent light-emitting chips arranged in an arrangement direction perpendicular to the vertical direction emit three different colors of light, and the arrangement direction is parallel to the long sides of the three adjacent light-emitting chips. In this way, the plurality of light-emitting chips are in a single package, so that the light emitted by each light-emitting chip can be transmitted in a similar path. In addition, the arrangement of the plurality of light-emitting crystals reduces the excessive concentration of light-emitting crystals of the same color, and also helps to make the light irradiating the keycap uniform.

關於本創作的優點與精神可以通過以下的創作詳述及所附圖式得到進一步的瞭解。 The advantages and spirit of this creation can be further understood through the following creation description and attached diagrams.

1,3,4:發光按鍵結構 1,3,4: Luminous button structure

12:鍵帽 12: Keycaps

12a,12a':可透光指示區域 12a, 12a': light-transmitting indication area

12b,12b':長度方向 12b,12b': length direction

12c,12c':長軸 12c,12c': major axis

12d,12d':短軸 12d,12d': short axis

14:底板 14: Base plate

142,142',142",143,143',144,145:通孔 142,142',142",143,143',144,145:Through hole

142a',142b',142c',142a",144a,144b:孔緣 142a',142b',142c',142a",144a,144b: Kong Yuan

142c:上表面 142c: Upper surface

143a:主孔部 143a: Main hole

143b:延伸部 143b: Extension

146:外板緣 146: Outer edge

16:第一支架 16: First bracket

162:下表面 162: Lower surface

164:上表面 164: Upper surface

166a,166b:框部 166a,166b: Frame

18:第二支架 18: Second bracket

20:開關電路板 20: Switch circuit board

202,202',202",203a,203b,203c:開關接點 202,202',202",203a,203b,203c: switch contacts

202a:平邊 202a: Flat edge

202b:圓心 202b: Center of circle

202c:半徑 202c: Radius

2032a,2032b:外圍部 2032a,2032b: Outer periphery

2034a,2034b:中心部 2034a,2034b: Center

2036a,2036b:連接部 2036a,2036b:Connection part

204:導線段 204: Wire segment

206:貫穿孔 206: Perforation

22a,22b,22c,22a',22b',22c',22a",22b",22c":發光晶粒 22a,22b,22c,22a',22b',22c',22a",22b",22c":luminescent grains

24:光源電路板 24: Light source circuit board

26:彈性圓突 26: Elastic dome

28,28':導光片 28,28': Light guide

282:容置槽 282: Storage tank

282a:內壁面 282a: Inner wall surface

284:上表面 284: Upper surface

30,30':遮罩層 30,30': Mask layer

302a,302b:透光區 302a, 302b: light-transmitting area

42,42',43,43a,43b,43c,43d:發光晶粒封裝體 42,42',43,43a,43b,43c,43d: Light-emitting chip package

420,420':載體 420,420':Carrier

420a:突出的側牆 420a: Protruding side wall

420b:容置空間 420b: Storage space

422a,422b,422c:發光晶粒 422a,422b,422c: Luminescent grains

424,424':透光封裝材料 424,424':Light-transmitting packaging materials

424a:頂表面 424a: Top surface

424b,424c:側表面 424b,424c: side surface

A1:樞接軸向 A1: Joint axis

D1:垂直方向 D1: vertical direction

D2,D2',D2":排列方向 D2,D2',D2":Arrangement direction

D3,D3',D3",D4a,D4b:水平方向 D3,D3',D3",D4a,D4b: horizontal direction

d1,d1a,d1a',d1b,d1b',d2,d3:出光間距 d1,d1a,d1a',d1b,d1b',d2,d3: light output distance

G:間隙投影 G: Interstitial projection

圖1為根據一實施例的發光按鍵結構的示意圖。 Figure 1 is a schematic diagram of a luminous key structure according to an embodiment.

圖2為圖1中發光按鍵結構的爆炸圖。 Figure 2 is an exploded view of the luminous key structure in Figure 1.

圖3為圖1中發光按鍵結構沿線X-X的剖面圖。 Figure 3 is a cross-sectional view of the luminous key structure along line X-X in Figure 1.

圖4A為開關電路板與發光晶粒的俯視配置示意圖。 Figure 4A is a top view schematic diagram of the switch circuit board and the light-emitting chip.

圖4B為圖4A延伸另一實施例的俯視配置示意圖。 FIG4B is a top view schematic diagram of another embodiment extending FIG4A.

圖4C為圖4A延伸另一實施例的俯視配置示意圖。 FIG4C is a top view schematic diagram of another embodiment extending FIG4A.

圖5為圖4A中開關接點與發光晶粒根據另一實施例的俯視配置示意圖。 FIG5 is a schematic diagram of a top view of the switch contacts and light-emitting die in FIG4A according to another embodiment.

圖6為圖4A中開關接點與發光晶粒根據另一實施例的俯視配置示意圖。 FIG6 is a schematic diagram of a top view of the switch contacts and light-emitting die in FIG4A according to another embodiment.

圖7為圖1中發光按鍵結構的俯視圖。 Figure 7 is a top view of the luminous key structure in Figure 1.

圖8為部分的開關電路板與發光晶粒根據一實施例的俯視配置示意圖。 FIG8 is a schematic diagram of a top view of a portion of a switch circuit board and a light-emitting chip according to an embodiment.

圖9為對應圖8實施例沿線Y-Y的剖面圖。 Figure 9 is a cross-sectional view along line Y-Y corresponding to the embodiment of Figure 8.

圖10為根據另一實施例的發光按鍵結構的爆炸示意圖。 Figure 10 is an exploded schematic diagram of a luminous key structure according to another embodiment.

圖11A為發光按鍵結構移除鍵帽後的俯視圖。 Figure 11A is a top view of the luminous key structure after the key cap is removed.

圖11B為圖11A延伸另一實施例的俯視圖。 FIG. 11B is a top view of another embodiment extending FIG. 11A .

圖12為圖11A的Z-Z線剖面圖。 Figure 12 is a cross-sectional view taken along line Z-Z of Figure 11A.

圖13A為圖10中發光按鍵結構的俯視圖。 FIG13A is a top view of the luminous key structure in FIG10.

圖13B為圖13A延伸另一實施例的局部俯視示意圖。 FIG13B is a partial top view schematic diagram of another embodiment extending FIG13A.

圖14為根據一第一實施例之一發光晶粒封裝體之示意圖。 FIG14 is a schematic diagram of a light-emitting chip package according to a first embodiment.

圖15為圖14中發光晶粒封裝體沿線W-W之剖面圖。 FIG15 is a cross-sectional view of the light-emitting chip package along line W-W in FIG14 .

圖16為圖14中發光晶粒封裝體之一變化例之示意圖。 FIG16 is a schematic diagram of a variation of the light-emitting chip package in FIG14 .

圖17為圖14中發光晶粒封裝體之俯視配置圖。 Figure 17 is a top view of the configuration of the light-emitting chip package in Figure 14.

圖18為根據一第二實施例之一發光晶粒封裝體之俯視配置圖。 FIG18 is a top view of a light-emitting chip package according to a second embodiment.

圖19為根據一第三實施例之一發光晶粒封裝體之俯視配置圖。 FIG19 is a top view of a light-emitting chip package according to a third embodiment.

圖20為根據一第四實施例之一發光晶粒封裝體之俯視配置圖。 FIG20 is a top view of a light-emitting chip package according to a fourth embodiment.

圖21為根據一第五實施例之一發光晶粒封裝體之俯視配置圖。 FIG21 is a top view of a light-emitting chip package according to a fifth embodiment.

圖22為根據一第六實施例之一發光晶粒封裝體之俯視配置圖。 FIG22 is a top view of a light-emitting chip package according to a sixth embodiment.

圖23為圖4A中發光晶粒以第六實施例之發光晶粒封裝體取代後之示意圖。 FIG23 is a schematic diagram showing the light-emitting chip in FIG4A being replaced by the light-emitting chip package of the sixth embodiment.

圖24為對應圖23之發光按鍵結構剖面圖。 Figure 24 is a cross-sectional view of the luminous key structure corresponding to Figure 23.

圖25為於通孔之一變化例中,開關接點與發光晶粒封裝體於底板上之俯視配置示意圖。 Figure 25 is a schematic diagram of the top view of the switch contacts and the light-emitting chip package on the bottom plate in a variation of the through hole.

圖26為於通孔之另一變化例中,開關接點與發光晶粒封裝體於底板上之俯視配置示意圖。 FIG. 26 is a schematic diagram showing the top view of the switch contacts and the light-emitting chip package on the base plate in another variation of the through hole.

圖27為圖8中發光晶粒以第六實施例之發光晶粒封裝體取代後之示意圖。 FIG27 is a schematic diagram showing the light-emitting chip in FIG8 being replaced by the light-emitting chip package of the sixth embodiment.

圖28為圖11A中發光晶粒以第六實施例之發光晶粒封裝體取代後之示意圖。 FIG28 is a schematic diagram showing the light-emitting chip in FIG11A being replaced by the light-emitting chip package of the sixth embodiment.

圖29為圖13B中發光晶粒以第六實施例之發光晶粒封裝體取代後之示意圖。 FIG29 is a schematic diagram showing the light-emitting chip in FIG13B being replaced by the light-emitting chip package of the sixth embodiment.

圖30為根據一實施例的發光按鍵結構的剖面圖。 Figure 30 is a cross-sectional view of a light-emitting key structure according to an embodiment.

圖31為圖30中發光按鍵結構更包含一遮罩層之剖面圖。 FIG31 is a cross-sectional view of the luminous key structure in FIG30 further including a mask layer.

圖32為圖31中發光按鍵結構之一變化例之剖面圖。 FIG32 is a cross-sectional view of a variation of the luminous key structure in FIG31.

圖33為圖32中開關接點、發光晶粒封裝體及遮罩層的透光區於底板上之俯視配置示意圖。 FIG33 is a top view schematic diagram of the switch contacts, light-emitting chip package, and light-transmitting area of the mask layer on the bottom plate in FIG32.

圖34為對應圖33之發光按鍵結構之剖面圖。 Figure 34 is a cross-sectional view of the luminous key structure corresponding to Figure 33.

請參閱圖1至圖3。圖1為根據一實施例的發光按鍵結構的示意圖。圖2為圖1中發光按鍵結構的爆炸圖。圖3為圖1中發光按鍵結構沿線X-X的剖面圖。 根據一實施例的發光按鍵結構1包含鍵帽12、底板14、第一支架16、第二支架18、透明的開關電路板20及一或多顆發光晶粒(例如但不限於三個發光晶粒22a、22b、22c,發光晶粒用於發射不同色光的光線,例如紅光、綠光及藍光;又,發光晶粒22a、22b、22c可由但不限於發光二極體實際製作)。鍵帽12設置於底板14上方,第一支架16及第二支架18均連接至鍵帽12及底板14之間,以支撐鍵帽12並使鍵帽12能經由第一支架16及第二支架18沿一垂直方向D1(以雙頭箭頭標示於圖1、圖3中)可移動。開關電路板20放置於底板14上(即位於鍵帽12下方)。發光晶粒22a、22b、22c設置於開關電路板20下方,例如固定於位於底板14下方的光源電路板24(光源電路板24例如為但不限於撓性印刷電路板)上,底板14形成對應的通孔142,以露出發光晶粒22a、22b、22c;實際操作中,發光晶粒22a、22b、22c可部分或全部進入通孔142。請參閱圖1和圖3,發光晶粒22a、22b、22c不高於底板14,發光晶粒22a、22b、22c均位於通孔142於垂直方向D1的投影內。開關電路板20的電路(其部分以虛線繪示於圖2中)未遮蔽發光晶粒22a、22b、22c,使得發光晶粒22a、22b、22c向上發射的光線能穿過開關電路板20以照射鍵帽12。 Please refer to Figures 1 to 3. Figure 1 is a schematic diagram of a light-emitting key structure according to an embodiment. Figure 2 is an exploded view of the light-emitting key structure in Figure 1. Figure 3 is a cross-sectional view of the light-emitting key structure along line X-X in Figure 1. According to an embodiment, the light-emitting key structure 1 includes a key cap 12, a base plate 14, a first bracket 16, a second bracket 18, a transparent switch circuit board 20 and one or more light-emitting crystals (for example, but not limited to three light-emitting crystals 22a, 22b, 22c, the light-emitting crystals are used to emit light of different colors, such as red light, green light and blue light; and the light-emitting crystals 22a, 22b, 22c can be made of, but not limited to, light-emitting diodes). The key cap 12 is disposed above the bottom plate 14, and the first bracket 16 and the second bracket 18 are connected between the key cap 12 and the bottom plate 14 to support the key cap 12 and enable the key cap 12 to move along a vertical direction D1 (indicated by a double-headed arrow in FIGS. 1 and 3 ) via the first bracket 16 and the second bracket 18. The switch circuit board 20 is placed on the bottom plate 14 (i.e., below the key cap 12). The light-emitting chips 22a, 22b, and 22c are disposed below the switch circuit board 20, for example, fixed on a light source circuit board 24 (the light source circuit board 24 is, for example, but not limited to, a flexible printed circuit board) located below the bottom plate 14. The bottom plate 14 forms corresponding through holes 142 to expose the light-emitting chips 22a, 22b, and 22c. In actual operation, the light-emitting chips 22a, 22b, and 22c can partially or completely enter the through holes 142. Please refer to Figures 1 and 3. The light-emitting chips 22a, 22b, and 22c are not higher than the bottom plate 14, and the light-emitting chips 22a, 22b, and 22c are all located within the projection of the through holes 142 in the vertical direction D1. The circuit of the switch circuit board 20 (part of which is shown in dotted lines in FIG. 2 ) does not shield the light-emitting chips 22a, 22b, and 22c, so that the light emitted upward by the light-emitting chips 22a, 22b, and 22c can pass through the switch circuit board 20 to illuminate the key cap 12.

於本實施例中,開關電路板20可以薄膜電路板實際製作,其通常由三層透明薄片疊置而成(即作為透光載板結構,使得開關電路板20可透光),其中上層及下層透明薄片其上形成所需的電路,中間的透明薄片提供電路所需的絕緣效果。開關電路板20的電路包含開關接點202及數個導線段(其隱藏輪廓於圖2中均以虛線繪示)。發光按鍵結構1利用可透光的彈性圓突26作為回復元件,彈性圓突26對齊開關接點202,彈性圓突26設置於開關電路板20上並於垂直方向D1上遮蓋住開關接點202及發光晶粒22a、22b、22c。鍵帽12可被按壓(例如使用者以手指按壓)而向下擠壓彈性圓突26,進而觸發開關接點202。施加於鍵帽12上的外力移除後(例如使用者自鍵帽12移開手指),被擠壓的彈性圓突26可回復原狀以 向上推抵鍵帽12回到原位。 In this embodiment, the switch circuit board 20 can be actually made of a thin film circuit board, which is usually formed by stacking three layers of transparent thin sheets (i.e., as a transparent carrier structure, so that the switch circuit board 20 is transparent), wherein the upper and lower transparent thin sheets form the required circuits thereon, and the middle transparent thin sheet provides the required insulation effect of the circuit. The circuit of the switch circuit board 20 includes a switch contact 202 and a plurality of wire segments (the hidden outlines of which are all shown in dotted lines in FIG. 2). The light-emitting key structure 1 uses a light-transmissive elastic protrusion 26 as a restoring element. The elastic protrusion 26 is aligned with the switch contact 202. The elastic protrusion 26 is disposed on the switch circuit board 20 and covers the switch contact 202 and the light-emitting chips 22a, 22b, and 22c in the vertical direction D1. The key cap 12 can be pressed (for example, the user presses it with a finger) to squeeze the elastic protrusion 26 downward, thereby triggering the switch contact 202. After the external force applied to the key cap 12 is removed (for example, the user removes the finger from the key cap 12), the squeezed elastic protrusion 26 can return to its original state to push the key cap 12 upward back to its original position.

請亦參閱圖4A,圖4A為圖2中發光按鍵結構的部分的開關電路板與發光晶粒的俯視配置示意圖。其中開關電路板20的電路及發光晶粒22a、22b、22c的隱藏輪廓均以實線繪示。開關接點202具有非圓形輪廓,例如但不限於切平圓形輪廓,此切平圓形輪廓具有平邊202a。發光晶粒22a、22b、22c沿一排列方向D2(以雙頭箭頭標示於圖4A中)排列,排列方向D2平行於平邊202a。發光晶粒22a、22b、22c與開關接點202間於一水平方向D3(以雙頭箭頭標示於圖中)具有出光間距d1(亦即發光晶粒22a、22b、22c的出光範圍邊緣於開關電路板20上的投影至平邊202a的距離)。原則上,發光晶粒22a、22b、22c離開關接點202越遠越能減少開關接點202遮蔽發光晶粒22a、22b、22c發射的光線的情形;實際操作中,此出光間距d1可設計為介於0.3mm至0.5mm之間。此外,於本實施例中,該切平圓形輪廓具有圓心202b及半徑202c,圓心202b至平邊202a的距離202d對半徑202c之比大於0.5,原則上開關接點202可保有可接受的接觸導通性質。 Please also refer to FIG. 4A, which is a schematic top view of the switch circuit board and the light-emitting die of the light-emitting key structure in FIG. 2. The circuit of the switch circuit board 20 and the hidden outlines of the light-emitting die 22a, 22b, 22c are all shown in solid lines. The switch contact 202 has a non-circular outline, such as but not limited to a flattened circular outline, and the flattened circular outline has a flat edge 202a. The light-emitting die 22a, 22b, 22c are arranged along an arrangement direction D2 (indicated by a double-headed arrow in FIG. 4A), and the arrangement direction D2 is parallel to the flat edge 202a. There is a light-emitting distance d1 between the light-emitting chips 22a, 22b, 22c and the switch contact 202 in a horizontal direction D3 (indicated by a double-headed arrow in the figure) (i.e., the distance from the edge of the light-emitting range of the light-emitting chips 22a, 22b, 22c projected on the switch circuit board 20 to the flat edge 202a). In principle, the farther the light-emitting chips 22a, 22b, 22c are from the switch contact 202, the less likely the switch contact 202 will shield the light emitted by the light-emitting chips 22a, 22b, 22c; in actual operation, this light-emitting distance d1 can be designed to be between 0.3mm and 0.5mm. In addition, in this embodiment, the flattened circular profile has a center 202b and a radius 202c, and the ratio of the distance 202d from the center 202b to the flat edge 202a to the radius 202c is greater than 0.5. In principle, the switch contact 202 can maintain acceptable contact conduction properties.

參考圖4B與圖4C,圖4B與圖4C均為圖4A延伸另一實施例的俯視配置圖,底板14的通孔142'(其輪廓投影以虛線繪示於圖中)有一部分圓弧邊緣與開關接點202的圓弧邊緣平行,另一側則由三個彼此垂直的邊緣,整體構成子彈形的通孔142'。圖4B中,所有發光晶粒22a、22b、22c沿一排列方向D2排列,發光晶粒22a、22b、22c不僅鄰近開關接點202的平邊202a,也鄰近底板14的通孔142'的平直孔緣142a',此時合適的配置為發光晶粒22a、22b、22c的排列方向D2平行(或大致平行)於底板14的通孔142'的孔緣142a',也平行(或大致平行)於開關接點202的平邊202a。圖4C中,發光晶粒22a、22b、22c排列成三角形,發光晶粒22a朝向底板14的通孔142'的平直孔緣142a',且發光晶粒22c不位在發光晶粒22a、22b的聯集範圍,而發光晶粒22b、22c採用邊與邊平行的方式沿一排列方向D2排列成一直線,此時至少兩個發光晶粒22b、22c的排列方向平行(或大致平行)於底 板14的通孔142'的平直孔緣142a',也平行(或大致平行)於開關接點202的平邊202a。但是實現方式並不以此為限,例如,至少兩個發光晶粒22b、22c也可能沿著水平方向D3排列,使得至少兩個發光晶粒22b、22c的排列方向垂直(或大致垂直)於底板14的通孔142'的平直孔緣142a',也垂直(或大致垂直)於開關接點202的平邊202a,但平行於水平方向D3。在另一實施例中,圖4B與4C的底板14的子彈形的通孔142',三個垂直邊緣可以視需要縮小,變成一端圓弧一端狹長的鑰匙形通孔142';此時發光晶粒22a、22b、22c全部或至少其中兩者可以排列成一直線而垂直於開關接點202的平邊202a和末端的孔緣142a'。 4B and 4C , both of which are top view configuration diagrams of another embodiment extending from FIG. 4A , the through hole 142 ′ of the bottom plate 14 (whose outline projection is shown in the figure with dotted lines) has a portion of the arc edge parallel to the arc edge of the switch contact 202, and the other side consists of three edges perpendicular to each other, forming a bullet-shaped through hole 142 ′ as a whole. In FIG. 4B , all the light-emitting chips 22a, 22b, and 22c are arranged along an arrangement direction D2. The light-emitting chips 22a, 22b, and 22c are not only adjacent to the flat edge 202a of the switch contact 202, but also adjacent to the straight hole edge 142a' of the through hole 142' of the bottom plate 14. At this time, the appropriate configuration is that the arrangement direction D2 of the light-emitting chips 22a, 22b, and 22c is parallel (or approximately parallel) to the hole edge 142a' of the through hole 142' of the bottom plate 14, and is also parallel (or approximately parallel) to the flat edge 202a of the switch contact 202. In FIG. 4C , the light-emitting grains 22a, 22b, and 22c are arranged in a triangle, the light-emitting grain 22a faces the straight hole edge 142a' of the through hole 142' of the bottom plate 14, and the light-emitting grain 22c is not located in the union range of the light-emitting grains 22a and 22b, and the light-emitting grains 22b and 22c are arranged in a straight line along an arrangement direction D2 in a side-to-side parallel manner. At this time, the arrangement direction of at least two light-emitting grains 22b and 22c is parallel (or substantially parallel) to the straight hole edge 142a' of the through hole 142' of the bottom plate 14, and is also parallel (or substantially parallel) to the flat edge 202a of the switch contact 202. However, the implementation is not limited thereto. For example, at least two light-emitting chips 22b and 22c may also be arranged along the horizontal direction D3, so that the arrangement direction of the at least two light-emitting chips 22b and 22c is perpendicular (or substantially perpendicular) to the straight hole edge 142a' of the through hole 142' of the bottom plate 14, and also perpendicular (or substantially perpendicular) to the flat edge 202a of the switch contact 202, but parallel to the horizontal direction D3. In another embodiment, the three vertical edges of the bullet-shaped through hole 142' of the bottom plate 14 of Figures 4B and 4C can be reduced as needed to become a key-shaped through hole 142' with a circular arc at one end and a narrow elongated end; at this time, all or at least two of the light-emitting grains 22a, 22b, and 22c can be arranged in a straight line perpendicular to the flat edge 202a of the switch contact 202 and the hole edge 142a' at the end.

前述底板14的通孔142'的孔緣142a'以及開關接點202的平邊202a都是異色敏感區,異色敏感區會造成混光不均和顏色偏差的異色問題。因此前述技術方案都將多個發光晶粒22a、22b、22c設置在異色敏感區的同一側,也就是發光晶粒22a、22b、22c同時設置在底板14的通孔142'的孔緣142a'的同一側,及/或發光晶粒22a、22b、22c同時設置在開關接點202的平邊202a的同一側,且該多個發光晶粒22a、22b、22c到達同一個異色敏感區的距離彼此相近。由於發光晶粒22a、22b、22c的製程技術已達毫米甚至微米等級,即使發光晶粒22a、22b、22c不是直線排列,到達同一個異色敏感區的距離也是彼此十分相近。為了清楚顯示,本創作各圖的多個發光晶粒繪製成較大尺寸,且多個發光晶粒彼此間距較大,實際實施的多個發光晶粒比例遠小於本創作中的各圖式。 The hole edge 142a' of the through hole 142' of the aforementioned bottom plate 14 and the flat edge 202a of the switch contact 202 are both heterochromatic sensitive areas, which may cause heterochromatic problems such as uneven light mixing and color deviation. Therefore, the aforementioned technical solutions all arrange the plurality of light-emitting crystals 22a, 22b, and 22c on the same side of the heterochromatic sensitive area, that is, the light-emitting crystals 22a, 22b, and 22c are arranged on the same side of the hole edge 142a' of the through hole 142' of the bottom plate 14, and/or the light-emitting crystals 22a, 22b, and 22c are arranged on the same side of the flat edge 202a of the switch contact 202, and the distances of the plurality of light-emitting crystals 22a, 22b, and 22c to the same heterochromatic sensitive area are close to each other. Since the manufacturing technology of the light-emitting crystals 22a, 22b, and 22c has reached the millimeter or even micrometer level, even if the light-emitting crystals 22a, 22b, and 22c are not arranged in a straight line, the distance to the same heterochromatic sensitive area is very close to each other. For the sake of clear display, the multiple light-emitting crystals in each figure of this creation are drawn in a larger size, and the distance between the multiple light-emitting crystals is larger. The actual ratio of multiple light-emitting crystals is much smaller than the various figures in this creation.

另外,實際操作中,開關電路板20的開關接點可能有不同的形狀。例如,如圖5所示,根據一實施例的開關接點203a包含一週邊部2032a及位於週邊部2032a內側的中心部2034a及兩個連接部2036a。兩個連接部2036a位於中心部2034a的相對兩側並連接週邊部2032a及中心部2034a。週邊部2032a沿圓形路徑(以虛線表示於圖中)不完整延伸而呈C形。中心部2034a具有圓形輪廓。發光晶粒22a、22b、22c位於週邊部2032a兩末端之間(即位於該C形開口處),且該圓形路 徑通過發光晶粒22a、22b、22c(即發光晶粒22a、22b、22c排列於該圓形路徑上)。發光晶粒22a、22b、22c較靠近中心部2034a且與中心部2034a間有出光間距d1a;同樣的,實際操作中,此出光間距d1a可設計為介於0.3mm至0.5mm之間。若發光晶粒22a、22b、22c較靠近週邊部2032a兩末端且與週邊部2032a兩末端間有一出光間距d1a';同樣的,實際操作中,此出光間距d1a'亦可設計為介於0.3mm至0.5mm之間。 In addition, in actual operation, the switch contacts of the switch circuit board 20 may have different shapes. For example, as shown in FIG. 5 , a switch contact 203a according to an embodiment includes a peripheral portion 2032a, a central portion 2034a located inside the peripheral portion 2032a, and two connecting portions 2036a. The two connecting portions 2036a are located on opposite sides of the central portion 2034a and connect the peripheral portion 2032a and the central portion 2034a. The peripheral portion 2032a extends incompletely along a circular path (indicated by a dotted line in the figure) and is C-shaped. The central portion 2034a has a circular outline. The light-emitting crystals 22a, 22b, 22c are located between the two ends of the peripheral portion 2032a (i.e., located at the C-shaped opening), and the circular path passes through the light-emitting crystals 22a, 22b, 22c (i.e., the light-emitting crystals 22a, 22b, 22c are arranged on the circular path). The light-emitting crystals 22a, 22b, 22c are closer to the central portion 2034a and have a light-emitting distance d1a between them and the central portion 2034a; similarly, in actual operation, the light-emitting distance d1a can be designed to be between 0.3 mm and 0.5 mm. If the light-emitting crystal grains 22a, 22b, and 22c are closer to the two ends of the peripheral portion 2032a and there is a light-emitting distance d1a' between the two ends of the peripheral portion 2032a; similarly, in actual operation, this light-emitting distance d1a' can also be designed to be between 0.3mm and 0.5mm.

又例如,如圖6所示,根據一實施例的開關接點203b包含週邊部2032b及位於週邊部2032b內側的中心部2034b及連接部2036b。連接部2036b連接週邊部2032b及中心部2034b。週邊部2032b沿凸多邊形路徑(例如但不限於五邊形路徑,以虛線表示於圖中)不完整延伸而略呈C形。中心部2034b具有凸多邊形輪廓(例如但不限於四邊形)。該凸多邊形路徑通過發光晶粒22a、22b、22c。發光晶粒22a、22b、22c較靠近中心部2034b且與中心部2034b間有出光間距d1b;同樣的,實際操作中,此出光間距d1b可設計為介於0.3mm至0.5mm之間。若發光晶粒22a、22b、22c較靠近週邊部2032b且與週邊部2032b間有出光間距d1b';同樣的,實際操作中,此出光間距d1b'亦可設計為介於0.3mm至0.5mm之間。此外,於圖5及圖6中,該凸多邊形路徑在實際操作中亦可為三角形路徑、六邊形路徑等等;該中心部2034a、2034b的輪廓亦可為其他凸多邊形輪廓,例如三角形輪廓、六邊形輪廓等等。 For another example, as shown in FIG6 , a switch contact 203b according to an embodiment includes a peripheral portion 2032b, a central portion 2034b located inside the peripheral portion 2032b, and a connecting portion 2036b. The connecting portion 2036b connects the peripheral portion 2032b and the central portion 2034b. The peripheral portion 2032b extends incompletely along a convex polygonal path (for example, but not limited to a pentagonal path, indicated by a dotted line in the figure) and is slightly C-shaped. The central portion 2034b has a convex polygonal profile (for example, but not limited to a quadrilateral). The convex polygonal path passes through the light-emitting grains 22a, 22b, and 22c. The light-emitting crystal grains 22a, 22b, and 22c are closer to the central portion 2034b and have a light-emitting distance d1b between them. Similarly, in actual operation, the light-emitting distance d1b can be designed to be between 0.3 mm and 0.5 mm. If the light-emitting crystal grains 22a, 22b, and 22c are closer to the peripheral portion 2032b and have a light-emitting distance d1b' between them, similarly, in actual operation, the light-emitting distance d1b' can also be designed to be between 0.3 mm and 0.5 mm. In addition, in FIG. 5 and FIG. 6, the convex polygonal path may also be a triangular path, a hexagonal path, etc. in actual operation; the outline of the center portion 2034a, 2034b may also be other convex polygonal outlines, such as a triangular outline, a hexagonal outline, etc.

請參閱圖1至圖3。於本實施例中,鍵帽12具有可透光指示區域12a(以虛線框示於圖中),發光晶粒22a、22b、22c發射的光線可穿過可透光指示區域12a以形成視覺上的指示效果。實際操作中,可透光指示區域12a可為數位、符號、字母、文字、圖形或其組合等等;換言之,可透光指示區域12a可包含多個可透光字元,可透光字元可為數位、符號、字母、文字或圖形。 Please refer to Figures 1 to 3. In this embodiment, the key cap 12 has a light-transmitting indication area 12a (shown in a dotted frame in the figure), and the light emitted by the light-emitting crystals 22a, 22b, and 22c can pass through the light-transmitting indication area 12a to form a visual indication effect. In actual operation, the light-transmitting indication area 12a can be a number, a symbol, a letter, a text, a graphic or a combination thereof; in other words, the light-transmitting indication area 12a can include a plurality of light-transmitting characters, and the light-transmitting characters can be numbers, symbols, letters, text or graphics.

請亦參閱圖7(其中發光晶粒22a、22b、22c的隱藏輪廓以細實線繪 示),圖7為圖1中發光按鍵結構的俯視圖。於本實施例中,可透光指示區域12a具有一長度方向12b(例如圖中字母排列方向,以雙頭箭頭標示於圖7中)。發光晶粒22a、22b、22c垂直於長度方向12b排列於可透光指示區域12a下方(即排列方向D2垂直於長度方向12b),藉此可減少或消除發光晶粒22a、22b、22c因間隔排列而產生混光不均的現象對可透光指示區域12a的影響。換言之,可透光指示區域12a(及後續實施例的可透光指示區域12a')的兩個末端是異色敏感區,容易混光不均而在鍵帽12出光時造成顏色差異問題。可透光指示區域12a可以包含多個可透光字元,該多個可透光字元沿一長軸排列,而所謂異色敏感區就是多個可透光字元的兩側的最末端字元。 Please also refer to FIG. 7 (where the hidden outlines of the luminescent crystals 22a, 22b, and 22c are shown in thin solid lines), which is a top view of the luminescent key structure in FIG. 1. In this embodiment, the light-transmissive indication region 12a has a length direction 12b (e.g., the letter arrangement direction in the figure, indicated by a double-headed arrow in FIG. 7). The luminescent crystals 22a, 22b, and 22c are arranged perpendicularly to the length direction 12b below the light-transmissive indication region 12a (i.e., the arrangement direction D2 is perpendicular to the length direction 12b), thereby reducing or eliminating the effect of uneven light mixing caused by the staggered arrangement of the luminescent crystals 22a, 22b, and 22c on the light-transmissive indication region 12a. In other words, the two ends of the light-transmitting indication area 12a (and the light-transmitting indication area 12a' in the subsequent embodiments) are heterochromatic sensitive areas, which are prone to uneven light mixing and cause color difference problems when the key cap 12 emits light. The light-transmitting indication area 12a can include multiple light-transmitting characters, which are arranged along a long axis, and the so-called heterochromatic sensitive areas are the end characters on both sides of the multiple light-transmitting characters.

此外,於本實施例中,可透光指示區域12a呈長方形,其上可定義長軸12c及短軸12d(均以鏈線表示於圖7中),長軸12c平行於長度方向12b,短軸12d垂直於長度方向12b。可透光指示區域12a分別相對於長軸12c及短軸12d結構對稱。就垂直投影而言,發光晶粒22a、22b、22c整體(即多個發光晶粒作為一個整體,下同)通過長軸12c且發光晶粒22a、22b、22c整體的中心(於本實施例中即為發光晶粒22b)位於長軸12c上。實際操作中亦可設計發光晶粒22a、22b、22c整體通過長軸12c的中心,如圖7中虛線方框所示者;此時,發光晶粒22a、22b、22c整體亦通過短軸12d的中心,且發光晶粒22a、22b、22c整體的中心(於本實施例中即為發光晶粒22b)亦位於長軸12c及短軸12d的中心;但不以此為限。例如,發光晶粒22a、22b、22c平行短軸12d偏移,使得發光晶粒22a、22b、22c整體的中心偏離長軸12c及短軸12d的中心(例如改為發光晶粒22a或22c位於長軸12c及短軸12d的中心;又例如,發光晶粒22a、22b、22c均未位於長軸12c及短軸12d的中心,如圖7虛線方框所示者)。另外,於發光按鍵結構1中,發光晶粒22a、22b、22c雖為直線排列,但實際操作中亦可呈非直線排列,例如呈三角形配置;此時,當發光晶粒22a、22b、22c能足夠靠近時(此可通過對產品實際試驗而得),亦能 減少或消除發光晶粒22a、22b、22c因排列間距過大而產生混光不均的現象對可透光指示區域12a的影響。本實施例各技術方案是將多個發光晶粒22a、22b、22c設置在異色敏感區的同一側,也就是發光晶粒22a、22b、22c同時設置在多個可透光字元的最末端字元的同一側。對於最末端字元"L"而言,發光晶粒22a、22b、22c同時設置在最末端字元"L"的同一側;而對於另一側的最末端字元"d"而言,多個發光晶粒22a、22b、22c也是位元在最末端字元"d"的同一側。就最末端字元"L"這個異色敏感區而言,發光晶粒22a、22b、22c的排列方向至少部分垂直可透光指示區域12a,使得到達同一個異色敏感區(最末端字元"L")的距離彼此相近,而能減少異色問題。同樣地,就最末端字元"d"這個異色敏感區而言,發光晶粒22a、22b、22c的排列方向至少部分垂直可透光指示區域12a,使得到達同一個異色敏感區(最末端字元"d")的距離彼此相近,同樣能減少異色問題。 In addition, in this embodiment, the light-transmissive indicating area 12a is rectangular, on which a long axis 12c and a short axis 12d (both represented by chain lines in FIG. 7 ) can be defined, the long axis 12c is parallel to the long direction 12b, and the short axis 12d is perpendicular to the long direction 12b. The light-transmissive indicating area 12a is structurally symmetrical with respect to the long axis 12c and the short axis 12d, respectively. In terms of vertical projection, the entirety of the luminescent grains 22a, 22b, and 22c (i.e., a plurality of luminescent grains as a whole, the same below) passes through the long axis 12c, and the center of the entirety of the luminescent grains 22a, 22b, and 22c (in this embodiment, the luminescent grain 22b) is located on the long axis 12c. In actual operation, the light-emitting crystal grains 22a, 22b, and 22c can be designed to pass through the center of the long axis 12c as a whole, as shown in the dotted box in Figure 7; at this time, the light-emitting crystal grains 22a, 22b, and 22c also pass through the center of the short axis 12d as a whole, and the center of the light-emitting crystal grains 22a, 22b, and 22c as a whole (the light-emitting crystal grain 22b in this embodiment) is also located at the center of the long axis 12c and the short axis 12d; but this is not limited to it. For example, the light-emitting grains 22a, 22b, and 22c are offset parallel to the short axis 12d, so that the center of the light-emitting grains 22a, 22b, and 22c as a whole deviates from the center of the long axis 12c and the short axis 12d (for example, the light-emitting grain 22a or 22c is located at the center of the long axis 12c and the short axis 12d; for another example, the light-emitting grains 22a, 22b, and 22c are not located at the center of the long axis 12c and the short axis 12d, as shown in the dotted box in FIG. 7). In addition, in the luminous key structure 1, although the luminous crystals 22a, 22b, and 22c are arranged in a straight line, they can also be arranged in a non-straight line in actual operation, such as a triangular configuration; in this case, when the luminous crystals 22a, 22b, and 22c are close enough (this can be obtained through actual product testing), the effect of uneven light mixing caused by the luminous crystals 22a, 22b, and 22c being too large in arrangement can be reduced or eliminated. The technical solutions of this embodiment are to set multiple luminous crystals 22a, 22b, and 22c on the same side of the different color sensitive area, that is, the luminous crystals 22a, 22b, and 22c are simultaneously set on the same side of the last character of multiple light-transmissive characters. For the last character "L", the light-emitting crystals 22a, 22b, and 22c are simultaneously arranged on the same side of the last character "L"; and for the last character "d" on the other side, the plurality of light-emitting crystals 22a, 22b, and 22c are also arranged on the same side of the last character "d". As for the heterochromatic sensitive area of the last character "L", the arrangement direction of the light-emitting crystals 22a, 22b, and 22c is at least partially perpendicular to the light-transmissive indication area 12a, so that the distances to the same heterochromatic sensitive area (the last character "L") are close to each other, thereby reducing the heterochromatic problem. Similarly, for the heterochromatic sensitive area of the last character "d", the arrangement direction of the luminescent crystals 22a, 22b, and 22c is at least partially perpendicular to the light-transmissive indication area 12a, so that the distances to the same heterochromatic sensitive area (the last character "d") are close to each other, which can also reduce the heterochromatic problem.

本創作中,鍵帽12於垂直方向D1的涵蓋範圍具有異色敏感區,異色敏感區例如為鍵帽12的可透光指示區域12a的末端,多個發光晶粒22a、22b、22c位於異色敏感區(可透光指示區域12a的末端)於垂直方向D1的投影的同一側。由於多個發光晶粒22a、22b、22c至可透光指示區域12a的末端的距離相近,從而多個發光晶粒22a、22b、22c發射的不同色光可以相近的距離行進至可透光指示區域12a的末端,進而能抑制混光不均、顏色偏差所造成的影響。 In this invention, the key cap 12 has a heterochromatic sensitive area in the coverage range of the vertical direction D1. The heterochromatic sensitive area is, for example, the end of the light-transmitting indication area 12a of the key cap 12. The multiple light-emitting crystals 22a, 22b, and 22c are located on the same side of the projection of the heterochromatic sensitive area (the end of the light-transmitting indication area 12a) in the vertical direction D1. Since the distances from the multiple light-emitting crystals 22a, 22b, and 22c to the end of the light-transmitting indication area 12a are close, the different colored lights emitted by the multiple light-emitting crystals 22a, 22b, and 22c can travel to the end of the light-transmitting indication area 12a at a similar distance, thereby suppressing the effects caused by uneven light mixing and color deviation.

於發光按鍵結構1中,開關接點202大致位於中央區域,但實際操作中不以此為限。例如開關接點202偏離中央區域設置,且由鍵帽12(例如向下突出的結構)或支架(第一支架16或第二支架18)觸發,此時發光晶粒22a、22b、22c可脫離彈性圓突26下方,使得發光晶粒22a、22b、22c發射的光線無需穿過彈性圓突26,可減少光線強度衰減。此外,所述開關電路板20的電路泛指多條導線(trace)與多個電路元件(circuit element)(如前述的開關接點202)的集合,均是發光晶粒22a、22b、22c需要避讓的物件。詳言之,於發光按鍵結構1中,發光晶粒22a、 22b、22c相較於電路其他部分更靠近開關接點202;但實際操作中,發光晶粒22a、22b、22c亦可能相較於開關接點202更靠近其他部分的電路。 In the light-emitting key structure 1, the switch contact 202 is roughly located in the central area, but it is not limited to this in actual operation. For example, the switch contact 202 is set away from the central area and is triggered by the key cap 12 (such as a downwardly protruding structure) or the bracket (the first bracket 16 or the second bracket 18). At this time, the light-emitting chips 22a, 22b, and 22c can be separated from the bottom of the elastic protrusion 26, so that the light emitted by the light-emitting chips 22a, 22b, and 22c does not need to pass through the elastic protrusion 26, which can reduce the attenuation of the light intensity. In addition, the circuit of the switch circuit board 20 generally refers to a collection of multiple traces and multiple circuit elements (such as the aforementioned switch contact 202), all of which are objects that the light-emitting chips 22a, 22b, and 22c need to avoid. In detail, in the light-emitting key structure 1, the light-emitting chips 22a, 22b, and 22c are closer to the switch contact 202 than other parts of the circuit; however, in actual operation, the light-emitting chips 22a, 22b, and 22c may also be closer to other parts of the circuit than the switch contact 202.

例如,於另一實施例中,如圖8所示(其中開關電路板20的電路的隱藏輪廓以細實線繪示),發光晶粒22a、22b、22c靠近一導線段204設置。導線段204成直線延伸,發光晶粒22a、22b、22c的排列方向D2'平行於導線段204,發光晶粒22a、22b、22c與導線段204間於水平方向D3'具有出光間距d2(亦即發光晶粒22a、22b、22c的出光範圍邊緣於開關電路板20上的投影至導線段204的距離)。實際操作中,此出光間距d2亦可設計為介於0.3mm至0.5mm之間。 For example, in another embodiment, as shown in FIG8 (where the hidden outline of the circuit of the switch circuit board 20 is shown in thin solid lines), the light-emitting chips 22a, 22b, and 22c are arranged near a wire segment 204. The wire segment 204 extends in a straight line, and the arrangement direction D2' of the light-emitting chips 22a, 22b, and 22c is parallel to the wire segment 204. The light-emitting chips 22a, 22b, and 22c have a light-emitting distance d2 in the horizontal direction D3' (that is, the distance from the edge of the light-emitting range of the light-emitting chips 22a, 22b, and 22c projected on the switch circuit board 20 to the wire segment 204). In actual operation, this light-emitting distance d2 can also be designed to be between 0.3 mm and 0.5 mm.

實際操作中,開關電路板20也可能視需要設置於底板14下方,此時開關電路板20更靠近最下層的發光晶粒22a、22b、22c而遮蔽更大出光範圍,需要更大幅度的避讓遠離開關電路板20的電路,對於構成電路的電路元件(如開關接點202)或導線(如導線段204),合適的前述出光間距d1、d2可能會超過上述較高臨界值0.5mm;在一些實際製作示例中,合適的出光間距d1、d2為0.59mm、0.66mm和0.78mm。當開關電路板20的電路遠離發光晶粒22a、22b、22c,例如使用厚度較大的底板14、或因發光按鍵結構1多出其他結構件(如磁吸重定或下沉鍵盤使用的移動板、磁鐵、凸台等等),合適的出光間距d1、d2可能會低於較低臨界值;例如在某些實際製作示例中,合適的出光間距d1、d2為0.27mm、0.23mm和0.17mm。因此,就不同機種的實驗資料,出光間距d1、d2較佳為落於0.17mm至0.78mm範圍內。 In actual operation, the switch circuit board 20 may also be arranged under the base plate 14 as needed. In this case, the switch circuit board 20 is closer to the light-emitting chips 22a, 22b, and 22c on the bottom layer and blocks a larger light-emitting range. It is necessary to avoid the circuit of the switch circuit board 20 to a greater extent. For the circuit elements (such as the switch contact 202) or the wires (such as the wire segment 204) that constitute the circuit, the appropriate light-emitting distances d1 and d2 may exceed the above-mentioned higher critical value of 0.5mm. In some actual manufacturing examples, the appropriate light-emitting distances d1 and d2 are 0.59mm, 0.66mm, and 0.78mm. When the circuit of the switch circuit board 20 is far away from the light-emitting chips 22a, 22b, and 22c, for example, a thicker base plate 14 is used, or the light-emitting key structure 1 has other structural parts (such as a moving plate, magnet, boss, etc. used for magnetic repositioning or sinking the keyboard), the appropriate light-emitting spacings d1 and d2 may be lower than the lower critical value; for example, in some actual manufacturing examples, the appropriate light-emitting spacings d1 and d2 are 0.27mm, 0.23mm, and 0.17mm. Therefore, based on the experimental data of different models, the light-emitting spacings d1 and d2 are preferably within the range of 0.17mm to 0.78mm.

再者,開關接點202可能分別印刷在開關電路板20的上層和下層透明薄片上,並且上層和下層的開關接點202可能具有不同圖案與外徑,發光晶粒22a、22b、22c通常需要避讓開關電路板20的上層和下層開關接點202的最外側邊緣,也就是前述出光間距d1須以上層和下層開關接點202的整體外輪廓為基準。 Furthermore, the switch contacts 202 may be printed on the upper and lower transparent sheets of the switch circuit board 20, respectively, and the upper and lower switch contacts 202 may have different patterns and outer diameters. The light-emitting chips 22a, 22b, and 22c usually need to avoid the outermost edges of the upper and lower switch contacts 202 of the switch circuit board 20, that is, the aforementioned light-emitting distance d1 must be based on the overall outer contour of the upper and lower switch contacts 202.

此外,請亦同時參閱圖8和圖9,圖9為對應圖8實施例沿線Y-Y的剖面 圖。於此例中,開關電路板20具有一貫穿孔206,發光晶粒22a、22b、22c正對底板14的通孔142"且正對貫穿孔206設置,使得發光晶粒22a、22b、22c向上發射的光線能穿過通孔142"及貫穿孔206以照射鍵帽12,此可消除光線穿過開關電路板20實體結構而產生的強度衰減。於圖4A所示的配置中,若結構設計允許,開關電路板20亦可於靠近開關接點202處形成正對發光晶粒22a、22b、22c的貫穿孔,以減少光線強度衰減。 In addition, please also refer to FIG. 8 and FIG. 9 . FIG. 9 is a cross-sectional view along the line Y-Y corresponding to the embodiment of FIG. 8 . In this embodiment, the switch circuit board 20 has a through hole 206 . The light-emitting crystals 22a , 22b , and 22c are arranged opposite to the through hole 142 ″ of the bottom plate 14 and opposite to the through hole 206 , so that the light emitted upward by the light-emitting crystals 22a , 22b , and 22c can pass through the through hole 142 ″ and the through hole 206 to illuminate the key cap 12 , which can eliminate the intensity attenuation caused by the light passing through the physical structure of the switch circuit board 20 . In the configuration shown in FIG. 4A , if the structural design allows, the switch circuit board 20 can also form a through hole facing the light-emitting chips 22a, 22b, and 22c near the switch contact 202 to reduce the attenuation of light intensity.

另外,於本實施例中,用於提供鍵帽12背光的所有發光晶粒22a、22b、22c呈平行於平邊202a的直線排列,但實際操作中不以此為限。例如發光晶粒22a、22b、22c以其他排列方式(例如弧形、三角形、多邊形、陣列等)排列,其中最靠近開關接點202的發光晶粒22a、22b或22c與開關接點202間於水平方向D3上的距離即定義為出光間距。同理,開關接點202靠近發光晶粒22a、22b、22c的輪廓亦不以直線為限,靠近發光晶粒22a、22b、22c的導線段204亦不以直線延伸為限。發光晶粒22a、22b、22c能越靠近電路設置,越能增加發光晶粒22a、22b、22c可設置的範圍,亦即能增加可透光指示區域12a的設計彈性。 In addition, in this embodiment, all the light-emitting chips 22a, 22b, and 22c used to provide backlight for the keycap 12 are arranged in a straight line parallel to the flat edge 202a, but this is not limited to the actual operation. For example, the light-emitting chips 22a, 22b, and 22c are arranged in other arrangements (such as arcs, triangles, polygons, arrays, etc.), and the distance between the light-emitting chip 22a, 22b, or 22c closest to the switch contact 202 and the switch contact 202 in the horizontal direction D3 is defined as the light-emitting distance. Similarly, the outline of the switch contact 202 close to the light-emitting chips 22a, 22b, and 22c is not limited to a straight line, and the wire segment 204 close to the light-emitting chips 22a, 22b, and 22c is not limited to a straight line extension. The closer the light-emitting crystals 22a, 22b, and 22c are to the circuit, the greater the range in which the light-emitting crystals 22a, 22b, and 22c can be placed, which means that the design flexibility of the light-transmissive indication area 12a can be increased.

請參閱圖10及圖11A,顯示根據另一實施例的一發光按鍵結構3,其與發光按鍵結構1結構相似,發光按鍵結構3原則上沿用發光按鍵結構1的元件符號。關於發光按鍵結構3的其他說明,請參閱前文發光按鍵結構1中相同命名構件及其變化例的相關說明。於發光按鍵結構3中,第一支架16及第二支架18相對設置且可透光,並共同連接於鍵帽12的底側及底板14的頂側。 Please refer to FIG. 10 and FIG. 11A, which show a light-emitting key structure 3 according to another embodiment, which is similar to the light-emitting key structure 1. The light-emitting key structure 3 basically uses the component symbols of the light-emitting key structure 1. For other descriptions of the light-emitting key structure 3, please refer to the related descriptions of the same-named components and their variations in the light-emitting key structure 1 above. In the light-emitting key structure 3, the first bracket 16 and the second bracket 18 are arranged opposite to each other and are light-transmissive, and are connected to the bottom side of the key cap 12 and the top side of the bottom plate 14.

鍵帽12未被按壓時,可透光的第一支架16及第二支架18是伸展狀態下的X型剪刀腳支撐架(如圖10所示或參閱圖3)。換言之,位於底板14下方的發光晶粒22a、22b、22c所發出光線,距離第一支架16及第二支架18的傾斜上半段和傾斜下半段以及上端、下端等不同部位的不同表面,有著不同的傳遞路徑與入射/反射/折射角度。第一支架16及第二支架18的交界處屬於異色敏感區,或者說 涵蓋其間隙投影G的垂直範圍都是異色敏感區,容易混光不均而在出光至鍵帽12時造成顏色差異問題。若將單色光源放置於第一支架16及第二支架18的間隙投影G範圍(以虛線影線表示於圖11A中,即第一支架16及第二支架18間的間隙於垂直方向D1的投影)內,會使得光線經由第一支架16及第二支架18的不同部位,直接或間接向鍵帽12傳遞照射,最終造成嚴重的光照不均問題。若將多色光源如發光晶粒22a、22b、22c放置於間隙投影G範圍內(或謂與間隙投影G範圍重疊),則會因為混光不均,而在鍵帽12上的不同位置產生顏色偏差的異色問題。 When the key cap 12 is not pressed, the light-transmissive first bracket 16 and the second bracket 18 are X-shaped scissor-leg support brackets in an extended state (as shown in FIG. 10 or refer to FIG. 3). In other words, the light emitted by the light-emitting chips 22a, 22b, and 22c located below the bottom plate 14 has different transmission paths and incident/reflection/refractive angles from different surfaces of the inclined upper half and the inclined lower half of the first bracket 16 and the second bracket 18, as well as the upper end and the lower end. The junction of the first bracket 16 and the second bracket 18 belongs to the heterochromatic sensitive area, or the vertical range covering the gap projection G between them is the heterochromatic sensitive area, which is prone to uneven light mixing and causes color difference problems when the light is emitted to the key cap 12. If a monochromatic light source is placed within the gap projection G range between the first bracket 16 and the second bracket 18 (indicated by dotted hatching in FIG. 11A, i.e., the projection of the gap between the first bracket 16 and the second bracket 18 in the vertical direction D1), the light will be transmitted directly or indirectly to the key cap 12 through different parts of the first bracket 16 and the second bracket 18, ultimately causing a serious problem of uneven illumination. If a multi-color light source such as the light-emitting crystals 22a, 22b, and 22c is placed within the gap projection G range (or overlapped with the gap projection G range), the uneven light mixing will cause a heterochromatic problem of color deviation at different positions on the key cap 12.

請參閱圖10及圖11A,因此,於本實施例中,用於提供背光的所有發光晶粒22a、22b、22c(於圖11A中,其隱藏的輪廓以粗實線繪示)均設置於第一支架16的下方(即發光晶粒22a、22b、22c均位於第一支架16於垂直方向D1的投影範圍內)且位於通孔144內(或正對底板14的通孔144而位於底板下方;即發光晶粒22a、22b、22c位於通孔144於垂直方向D1的投影內)。發光晶粒22a、22b、22c發射的光線自通孔144向上行進並穿過第一支架16(或穿過通孔144及第一支架16)以照射鍵帽12。由於發光晶粒22a、22b、22c發射的光線穿過同一支架,故原則上光線受到十分相近的影響(例如強度衰減、進行路徑發散或偏移等),進而能抑制該光線穿過結構件後可能產生色偏的程度。又,於本實施例中,發光晶粒22a、22b、22c發射的光線是自第一支架16的下表面162進入第一支架16,並自第一支架16的上表面164射出第一支架16,下表面162與上表面164平行,此結構配置亦有助於抑制該光線穿過結構件後可能產生色偏的程度。同理,實際操作中,發光晶粒22a、22b、22c亦可改為設置於第二支架18下方,如圖11A中虛線所示。如此一來,只要第一支架16及第二支架18的間隙投影G(也就是第一支架16及第二支架18的間隙區在垂直方向的投影區域),並不與發光晶粒22a、22b、22c重疊,即能避免產生前述色偏問題。前述第一支架16及第二支架18的間隙投影G不與發光晶粒22a、22b、22c重疊的情況,除了意指間隙投影G不直接重疊任一顆發光 晶粒22a、22b、22c本身,也涵蓋間隙投影G不通過任兩顆相鄰發光晶粒22a/22b、22b/22c之間的空隙(即間隙投影G不重疊或不通過發光晶粒22a、22b、22c的整體),發光晶粒22a、22b、22c的整體邏輯上可由能涵蓋所有發光晶粒22a、22b、22c的單一凸多邊形區域所表現,例如發光晶粒22a、22b、22c非呈直線排列(如圖11A的放大圖中虛線方框所示者),其整體可由凸六邊形區域(如圖11A中虛線多邊形所示,或以其中心連線而言為三角形排列)。在間隙投影G不重疊或不通過發光晶粒22a'、22b'、22c'的整體的前提下,發光晶粒22a'、22b'、22c'的排列與間隙投影G也可以具有特定相對關係。例如,圖11A中三角形排列的虛線發光晶粒22a'、22b'、22c'中至少兩個沿水平方向D3"排列(即發光晶粒22a'、22b'、22c'中至少兩個平行水平方向D3")而垂直於間隙投影G(即間隙投影G大致平行於排列方向D2"延伸)。 Please refer to FIG. 10 and FIG. 11A. Therefore, in this embodiment, all the light-emitting chips 22a, 22b, 22c (in FIG. 11A, their hidden outlines are shown in thick solid lines) used to provide backlight are arranged below the first bracket 16 (i.e., the light-emitting chips 22a, 22b, 22c are all located within the projection range of the first bracket 16 in the vertical direction D1) and are located in the through hole 144 (or facing the through hole 144 of the bottom plate 14 and located below the bottom plate; i.e., the light-emitting chips 22a, 22b, 22c are located within the projection range of the through hole 144 in the vertical direction D1). The light emitted by the light-emitting chips 22a, 22b, 22c moves upward from the through hole 144 and passes through the first bracket 16 (or passes through the through hole 144 and the first bracket 16) to illuminate the key cap 12. Since the light emitted by the light-emitting crystals 22a, 22b, and 22c passes through the same bracket, the light is in principle subjected to very similar effects (e.g., intensity attenuation, path divergence or deviation, etc.), thereby suppressing the degree of color deviation that may be generated after the light passes through the structural member. In addition, in this embodiment, the light emitted by the light-emitting crystals 22a, 22b, and 22c enters the first bracket 16 from the lower surface 162 of the first bracket 16, and is emitted from the first bracket 16 from the upper surface 164 of the first bracket 16. The lower surface 162 is parallel to the upper surface 164. This structural configuration also helps to suppress the degree of color deviation that may be generated after the light passes through the structural member. Similarly, in actual operation, the light-emitting crystals 22a, 22b, and 22c can also be arranged below the second bracket 18, as shown by the dotted line in FIG. 11A. In this way, as long as the gap projection G of the first bracket 16 and the second bracket 18 (that is, the projection area of the gap area of the first bracket 16 and the second bracket 18 in the vertical direction) does not overlap with the light-emitting crystals 22a, 22b, and 22c, the aforementioned color deviation problem can be avoided. The aforementioned situation that the gap projection G of the first bracket 16 and the second bracket 18 does not overlap with the light-emitting crystals 22a, 22b, and 22c not only means that the gap projection G does not directly overlap any light-emitting crystal 22a, 22b, and 22c itself, but also covers the situation that the gap projection G does not pass through the gap between any two adjacent light-emitting crystals 22a/22b, 22b/22c (that is, the gap projection G does not overlap or pass through the light-emitting crystals 22a, 22b, and 22c). c), the entirety of the luminescent crystals 22a, 22b, 22c can be logically represented by a single convex polygonal region that can cover all the luminescent crystals 22a, 22b, 22c. For example, the luminescent crystals 22a, 22b, 22c are not arranged in a straight line (as shown by the dashed box in the enlarged view of FIG. 11A), and their entirety can be represented by a convex hexagonal region (as shown by the dashed polygon in FIG. 11A, or a triangular arrangement in terms of the center line). Under the premise that the gap projection G does not overlap or pass through the entirety of the luminescent crystals 22a', 22b', 22c', the arrangement of the luminescent crystals 22a', 22b', 22c' and the gap projection G can also have a specific relative relationship. For example, at least two of the dotted light-emitting crystal grains 22a', 22b', and 22c' arranged in a triangle in FIG. 11A are arranged along the horizontal direction D3" (i.e., at least two of the light-emitting crystal grains 22a', 22b', and 22c' are parallel to the horizontal direction D3") and perpendicular to the gap projection G (i.e., the gap projection G extends approximately parallel to the arrangement direction D2").

再者,如圖11B三角排列在第二支架18處的三個虛線發光晶粒22a'、22b'、22c'所示,當虛線發光晶粒22a'、22b'、22c'排列成三角形時(以其中心連線而言),即發光晶粒22b'、22c'採用邊與邊平行的方式(即彼此平行地)沿排列方向D2"直線排列,且發光晶粒22a'不位在發光晶粒22b'、22c'的聯集範圍(例如,發光晶粒22b'與發光晶粒22c'的軸心為一直線,而且發光晶粒22a'的軸心不在該直線上)。為避免虛線發光晶粒22a'、22b'、22c'中至少兩個同時鄰近第一支架16及第二支架18交界處的間隙投影G、但是到達間隙投影G的距離不相等,而造成局部輕微的異色問題,可讓鄰近間隙投影G的至少兩個虛線發光晶粒22a'、22b'、22c'的排列方向D2"可以與間隙投影G平行,也與水平方向D3"垂直;至於三角排列的第三顆虛線發光晶粒22a'、22b'或22c',則大致位於前述兩顆虛線發光晶粒22a'、22b'或22c'的連線中心線上,第三顆虛線發光晶粒22a'、22b'或22c'可以遠離間隙投影G,也可以較其他兩顆更為鄰近間隙投影G。 Furthermore, as shown in FIG. 11B , the three dotted light-emitting grains 22a', 22b', and 22c' arranged in a triangle at the second bracket 18, when the dotted light-emitting grains 22a', 22b', and 22c' are arranged in a triangle (in terms of the center line), that is, the light-emitting grains 22b' and 22c' are arranged in a straight line along the arrangement direction D2" in a side-to-side parallel manner (i.e., parallel to each other), and the light-emitting grain 22a' is not located in the union range of the light-emitting grains 22b' and 22c' (for example, the axes of the light-emitting grains 22b' and the light-emitting grains 22c' are in a straight line, and the axis of the light-emitting grain 22a' is not on the straight line). In order to avoid at least two of the dotted light-emitting grains 22a', 22b', and 22c' being When the gap projection G is adjacent to the junction of the first bracket 16 and the second bracket 18, but the distance to the gap projection G is not equal, causing a slight local heterochromatic problem, the arrangement direction D2" of at least two dotted line light-emitting crystals 22a', 22b', 22c' adjacent to the gap projection G can be parallel to the gap projection G and perpendicular to the horizontal direction D3"; as for the third dotted line light-emitting crystal 22a', 22b' or 22c' in the triangle arrangement, it is roughly located on the center line of the connection between the two dotted line light-emitting crystals 22a', 22b' or 22c'. The third dotted line light-emitting crystal 22a', 22b' or 22c' can be far away from the gap projection G, or closer to the gap projection G than the other two.

此外,於本實施例中,第一支架16整體呈矩形框,發光晶粒22a、22b、 22c位於該矩形框其中一框部166a下方,框部166a於垂直方向D1的投影具有長度方向(如圖11A的視角所示,該長度方向即相當於發光晶粒22a、22b、22c的排列方向D2"),該長度方向平行於發光晶粒22a、22b、22c的排列方向D2"。實際操作中,發光晶粒22a、22b、22c亦可位於該矩形框其中一框部166b下方,發光晶粒22a、22b、22c平行於此框部166b的長度方向(或延伸方向)排列。又,第一支架16亦可由呈其他幾何形狀配置的框架來實際製作,例如U形(或n形)框。 In addition, in this embodiment, the first bracket 16 is in the form of a rectangular frame, and the light-emitting crystals 22a, 22b, and 22c are located below one of the frame portions 166a of the rectangular frame. The projection of the frame portion 166a in the vertical direction D1 has a length direction (as shown in the perspective of FIG. 11A, the length direction is equivalent to the arrangement direction D2") of the light-emitting crystals 22a, 22b, and 22c, and the length direction is parallel to the arrangement direction D2" of the light-emitting crystals 22a, 22b, and 22c. In actual operation, the light-emitting crystals 22a, 22b, and 22c may also be located below one of the frame portions 166b of the rectangular frame, and the light-emitting crystals 22a, 22b, and 22c are arranged parallel to the length direction (or extension direction) of the frame portion 166b. Furthermore, the first bracket 16 can also be actually made of a frame configured in other geometric shapes, such as a U-shaped (or n-shaped) frame.

綜而言之,本實施例前述各技術方案是將發光晶粒22a、22b、22c及22a'、22b'或22c'設置在異色敏感區即間隙投影G的同一側。同時,就發光晶粒22a、22b、22c而言,到達同一個異色敏感區(間隙投影G)的距離彼此相近;就發光晶粒22a'、22b'或22c'而言,到達同一個異色敏感區(間隙投影G)的距離也是彼此相近。例如鍵帽尺寸的數量級為cm,而多個發光晶粒彼此間距低於1mm,如此到達同一個異色敏感區的距離彼此相近意味著各發光晶粒到達同一個異色敏感區(間隙投影G)的彼此距離差幾乎可以忽略(例如各發光晶粒到達同一個異色敏感區的彼此距離差低於1mm),而這樣細微距離差造成的異色情況已非人眼可以辨識出差異。 In summary, the above-mentioned technical solutions of this embodiment are to arrange the light-emitting crystal grains 22a, 22b, 22c and 22a', 22b' or 22c' on the same side of the heterochromatic sensitive area, i.e., the gap projection G. At the same time, the distances of the light-emitting crystal grains 22a, 22b, 22c to the same heterochromatic sensitive area (gap projection G) are close to each other; the distances of the light-emitting crystal grains 22a', 22b' or 22c' to the same heterochromatic sensitive area (gap projection G) are also close to each other. For example, the size of the keycap is in the order of cm, and the distance between multiple light-emitting crystals is less than 1mm. The distances to the same heterochromatic sensitive area are close to each other, which means that the distance difference between each light-emitting crystal to the same heterochromatic sensitive area (gap projection G) can be almost ignored (for example, the distance difference between each light-emitting crystal to the same heterochromatic sensitive area is less than 1mm). However, the heterochromatic phenomenon caused by such micro-distance difference is not discernible by the human eye.

本創作中,鍵帽12於垂直方向D1的涵蓋範圍具有異色敏感區,異色敏感區例如為鍵帽12第一支架16與第二支架18間的間隙投影G,多個發光晶粒22a、22b、22c的整體不與間隙投影G重疊。由於多個發光晶粒22a、22b、22c發射的不同色光可以相近的距離行進,進而能抑制間隙投影G對混光不均、顏色偏差所造成的影響。 In this invention, the key cap 12 has a heterochromatic sensitive area in the vertical direction D1. The heterochromatic sensitive area is, for example, the gap projection G between the first bracket 16 and the second bracket 18 of the key cap 12. The entirety of the multiple light-emitting crystals 22a, 22b, and 22c does not overlap with the gap projection G. Since the different colored lights emitted by the multiple light-emitting crystals 22a, 22b, and 22c can travel at a similar distance, the effect of the gap projection G on uneven light mixing and color deviation can be suppressed.

此外,請亦參閱圖10和圖12。於本實施例中,底板14於水平方向D3"上具有最靠近發光晶粒22a、22b、22c的外板緣146,發光晶粒22a、22b、22c與外板緣146間於水平方向D3"上具有出光間距d3。原則上,發光晶粒22a、22b、22c離外板緣146越遠,則底板14越能抑制發光晶粒22a、22b、22c發射的光線自 外板緣146逸出;實際操作中,多個機種的合適出光間距d3為4.8mm,5.3mm,6.2mm,7.1mm,7.7mm,此出光間距d3較佳為介於4.8至7.7mm。此外,於本實施例中,發光晶粒22a、22b、22c的排列方向D2"平行於外板緣146,但實際操作中不以此為限。 In addition, please also refer to Figure 10 and Figure 12. In this embodiment, the bottom plate 14 has an outer plate edge 146 closest to the light-emitting chips 22a, 22b, 22c in the horizontal direction D3", and the light-emitting chips 22a, 22b, 22c and the outer plate edge 146 have a light-emitting distance d3 in the horizontal direction D3". In principle, the farther the light-emitting crystals 22a, 22b, and 22c are from the outer edge 146, the more the bottom plate 14 can suppress the light emitted by the light-emitting crystals 22a, 22b, and 22c from escaping from the outer edge 146; in actual operation, the appropriate light-emitting distance d3 of multiple models is 4.8mm, 5.3mm, 6.2mm, 7.1mm, and 7.7mm, and this light-emitting distance d3 is preferably between 4.8 and 7.7mm. In addition, in this embodiment, the arrangement direction D2" of the light-emitting crystals 22a, 22b, and 22c is parallel to the outer edge 146, but this is not limited to this in actual operation.

此外,請亦參閱圖13A,圖13A為圖10中發光按鍵結構的俯視圖,其中發光晶粒22a、22b、22c的隱藏輪廓以細實線繪示。一般而言,單色光源的排列方向並不需要考量鍵帽12的可透光指示區域12a'的長度方向12b'。不過在多色光源的情況,如以發光晶粒22a、22b、22c三色混光成各種需要呈現的顏色時,若發光晶粒22a、22b、22c的排列方向D2"垂直鍵帽12的可透光指示區域12a'的長度方向12b',外側的兩顆發光晶粒22a、22c在鄰近的字元區段提供的光量最充足,但遠離發光晶粒22a、22c的字元區段即有光量不足問題,造成可透光指示區域12a'在長度方向12b'上兩末梢區段產生色偏問題。再者,圖13B為圖13A延伸另一實施例的俯視圖,其中發光晶粒22a"、22b"、22c"排列成三角形(以其中心連線而言),即發光晶粒22b"的長邊、發光晶粒22c"的長邊垂直排列方向D2"直線排列,且發光晶粒22a"不位在發光晶粒22b"、22c"的聯集範圍;如有必要,發光晶粒22a"的長邊平行發光晶粒22b"、22c"的短邊,但發光晶粒22a"的長邊垂直發光晶粒22b"、22c"的長邊。至少兩個發光晶粒22b"、22c"的排列方向D2"垂直於可透光指示區域12a'的長度方向12b'/長軸方向12c'、也垂直於水平方向D3",而平行短軸方向12d',由於發光晶粒22b"、22c"位在同一異色敏感區的同一側,即最末端字元的第一可透光字元"L"或第二可透光字元"d"的同一側,且到達同一異色敏感區即最末端字元"L"或"d"的距離已經彼此相近,因此可以排除異色問題。至於第三個發光晶粒22a',則較佳是鄰近於可透光指示區域12a'的短軸12d'中線上。此時,可透光指示區域12a'下方沒有發光晶粒22a"、22b"、22c"以外的其他發光體。如有必要,第一可透光字元"L"與該第二可透光字元"d"的聯線通過發光晶粒 22a"、22b"、22c"的聯集範圍;或者第一可透光字元"L"與該第二可透光字元"d"的聯線可以通過發光晶粒22a";或者讓發光晶粒22a"、22b"、22c"的聯集範圍的中心位於可透光指示區域12a'的長軸中心點。整體而言,發光晶粒22a"、22b"、22c"較佳是鄰近於可透光指示區域12a'的幾何中心附近。 In addition, please also refer to FIG13A, which is a top view of the luminous key structure in FIG10, wherein the hidden outlines of the luminous grains 22a, 22b, 22c are shown with thin solid lines. Generally speaking, the arrangement direction of the monochromatic light source does not need to consider the length direction 12b' of the light-transmissive indication area 12a' of the key cap 12. However, in the case of a multi-color light source, for example, when the three colors of the light-emitting crystals 22a, 22b, and 22c are mixed to form various colors that need to be presented, if the arrangement direction D2" of the light-emitting crystals 22a, 22b, and 22c is perpendicular to the length direction 12b' of the light-transmitting indication area 12a' of the key cap 12, the two light-emitting crystals 22a and 22c on the outside provide the most sufficient light in the adjacent character segments, but the character segments far from the light-emitting crystals 22a and 22c have insufficient light, resulting in color deviation problems in the two end segments of the light-transmitting indication area 12a' in the length direction 12b'. Furthermore, FIG13B is a top view of another embodiment extending FIG13A, wherein the light-emitting grains 22a", 22b", and 22c" are arranged in a triangle (in terms of the line connecting their centers), that is, the long sides of the light-emitting grain 22b" and the long sides of the light-emitting grain 22c" are arranged in a straight line perpendicular to the arrangement direction D2", and the light-emitting grain 22a" is not located within the union range of the light-emitting grains 22b" and 22c"; if necessary, the long side of the light-emitting grain 22a" is parallel to the short sides of the light-emitting grains 22b" and 22c", but the long side of the light-emitting grain 22a" is perpendicular to the long sides of the light-emitting grains 22b" and 22c". The arrangement direction D2" of at least two luminescent crystal grains 22b", 22c" is perpendicular to the length direction 12b'/long axis direction 12c' of the light-transmissive indication region 12a', and is also perpendicular to the horizontal direction D3", and is parallel to the short axis direction 12d'. Since the luminescent crystal grains 22b", 22c" are located on the same side of the same heterochromatic sensitive region, i.e., the same side of the first transmissive character "L" or the second transmissive character "d" of the last character, and the distances to the same heterochromatic sensitive region, i.e., the last character "L" or "d", are close to each other, the heterochromatic problem can be eliminated. As for the third luminescent crystal grain 22a', it is preferably located close to the midline of the short axis 12d' of the light-transmissive indication region 12a'. At this time, there is no other luminous body except the luminescent crystals 22a", 22b", 22c" below the light-transmitting indication area 12a'. If necessary, the line connecting the first light-transmitting character "L" and the second light-transmitting character "d" passes through the union range of the luminescent crystals 22a", 22b", 22c"; or the line connecting the first light-transmitting character "L" and the second light-transmitting character "d" can pass through the luminescent crystal 22a"; or the center of the union range of the luminescent crystals 22a", 22b", 22c" is located at the center point of the long axis of the light-transmitting indication area 12a'. In general, the luminescent crystals 22a", 22b", 22c" are preferably located near the geometric center of the light-transmitting indication area 12a'.

於本實施例中,鍵帽12位於發光晶粒22a、22b、22c上方的可透光指示區域12a'的長度方向12b'與排列方向D2"垂直,故可減少或消除發光晶粒22a、22b、22c因間隔排列而產生混光不均的現象對可透光指示區域12a'的影響。另外,關於發光晶粒22a、22b、22c與可透光指示區域12a'相對位置關係的其他說明,可參閱前文發光晶粒22a、22b、22c與可透光指示區域12a相對位置關係及其變化例的相關說明,不另贅述。另外,於本實施例中,通孔144大致呈矩形,其孔緣144a、144b與可透光指示區域12a'的邊平行,發光晶粒22a、22b、22c的排列方向D2"亦平行於通孔144的孔緣144a、144b(亦相當於內板緣),如圖10及圖12所示。此配置有助於減少通孔144對發光晶粒22a、22b、22c提供給可透光指示區域12a'的光場的影響。此說明亦適用於前述圖8及圖9中發光晶粒22a、22b、22c相對於通孔142"的設置(其中發光晶粒22a、22b、22c亦平行於孔緣142a"設置)。又,前述平行孔緣的排列配置亦可適用於發光按鍵結構1中發光晶粒22a、22b、22c相對於通孔142(例如修改為矩形孔)的設置,不另贅述。 In this embodiment, the length direction 12b' of the light-transmitting indication area 12a' of the key cap 12 located above the light-emitting crystals 22a, 22b, 22c is perpendicular to the arrangement direction D2", so that the effect of uneven light mixing caused by the staggered arrangement of the light-emitting crystals 22a, 22b, 22c on the light-transmitting indication area 12a' can be reduced or eliminated. In addition, for other descriptions of the relative position relationship between the light-emitting crystals 22a, 22b, 22c and the light-transmitting indication area 12a', please refer to the previous The description of the relative position relationship between the luminescent grains 22a, 22b, 22c and the light-transmitting indication area 12a and its variations is not repeated here. In addition, in the present embodiment, the through hole 144 is roughly rectangular, and its hole edges 144a, 144b are parallel to the sides of the light-transmitting indication area 12a', and the arrangement direction D2" of the luminescent grains 22a, 22b, 22c is also parallel to the hole edges 144a, 144b of the through hole 144 (also equivalent to the inner plate edge), as shown in Figures 10 and 12. This configuration helps to reduce the impact of the through hole 144 on the light field provided by the luminescent grains 22a, 22b, 22c to the light-transmitting indication area 12a'. This description is also applicable to the arrangement of the light-emitting crystals 22a, 22b, 22c relative to the through hole 142" in Figures 8 and 9 (where the light-emitting crystals 22a, 22b, 22c are also arranged parallel to the hole edge 142a". In addition, the arrangement of the parallel hole edge can also be applied to the arrangement of the light-emitting crystals 22a, 22b, 22c relative to the through hole 142 (for example, modified to a rectangular hole) in the light-emitting key structure 1, which will not be described separately.

另外,於發光按鍵結構中,實際操作中亦可經修改以將發光晶粒22a、22b、22c設置於底板14上方,可避免底板14對發光晶粒22a、22b、22c發射的光線的干擾。此時,底板14無需對應發光晶粒22a、22b、22c形成通孔,有益於底板14強度。又,發光晶粒22a、22b、22c可整合至開關電路板20的電路中,例如發光晶粒22a、22b、22c直接設置於開關電路板20中下層透明薄片上,由其上的電路提供電力,中間及上層透明薄片對應形成開口,以使發光晶粒22a、22b、22c露出,此結構配置可排除開關電路板20對發光晶粒22a、22b、22c發射 的光線的干擾。 In addition, in the luminous key structure, the luminous crystals 22a, 22b, 22c can be modified in actual operation to be disposed above the bottom plate 14, so as to avoid the bottom plate 14 interfering with the light emitted by the luminous crystals 22a, 22b, 22c. In this case, the bottom plate 14 does not need to form through holes corresponding to the luminous crystals 22a, 22b, 22c, which is beneficial to the strength of the bottom plate 14. Furthermore, the light-emitting chips 22a, 22b, and 22c can be integrated into the circuit of the switch circuit board 20. For example, the light-emitting chips 22a, 22b, and 22c are directly arranged on the lower transparent sheet of the switch circuit board 20, and the circuit thereon provides power. The middle and upper transparent sheets form corresponding openings to expose the light-emitting chips 22a, 22b, and 22c. This structural configuration can eliminate the interference of the switch circuit board 20 with the light emitted by the light-emitting chips 22a, 22b, and 22c.

此外,於發光按鍵結構1、3中,第一支架16及第二支架18以其中間部位以樞接軸向A1(以虛線表示於圖中)相互樞接而形成X型剪刀腳支撐架,但實際操作中不以此為限。例如,第一支架16及第二支架18可改以其端部相互樞接、或以端部直接連接在底板14上而形成V型蝴蝶腳支架或倒V型蝙蝠支架。又例如,第一支架16及第二支架18可改以相對且分隔設置(例如各自與底板14可旋轉的連接),另以連動支架以連動第一支架16及第二支架18。又,發光按鍵結構1、3以彈性圓突26作為回復力機制,但實際操作中不以此為限,例如改以彈簧、磁吸機構實現回復力機制。 In addition, in the light-emitting key structures 1 and 3, the first bracket 16 and the second bracket 18 are pivoted to each other at the pivot axis A1 (indicated by a dotted line in the figure) at their middle parts to form an X-shaped scissor-leg support frame, but the actual operation is not limited to this. For example, the first bracket 16 and the second bracket 18 can be pivoted to each other at their ends, or directly connected to the bottom plate 14 at their ends to form a V-shaped butterfly-leg support or an inverted V-shaped bat bracket. For another example, the first bracket 16 and the second bracket 18 can be arranged opposite and separately (for example, each can be rotatably connected to the bottom plate 14), and a linkage bracket is used to link the first bracket 16 and the second bracket 18. In addition, the luminous key structures 1 and 3 use the elastic protrusion 26 as the restoring force mechanism, but this is not limited to the actual operation. For example, a spring or magnetic attraction mechanism can be used to realize the restoring force mechanism.

於實際操作中,如圖10所示,本實施例中,鍵帽12具有可透光指示區域12a',可透光指示區域12a'具有長度方向12b',樞接軸向A1平行於可透光指示區域12a'的長度方向12b'。當發光晶粒22a、22b、22c如圖11A所示進行排布時,發光晶粒22a、22b、22c發射的不同色光可以相近的距離行進至可透光指示區域12a'的末端,進而能抑制混光不均、顏色偏差的問題。 In actual operation, as shown in FIG. 10 , in this embodiment, the key cap 12 has a light-transmitting indication area 12a', and the light-transmitting indication area 12a' has a length direction 12b', and the articulated axis A1 is parallel to the length direction 12b' of the light-transmitting indication area 12a'. When the light-emitting crystal grains 22a, 22b, and 22c are arranged as shown in FIG. 11A , the light of different colors emitted by the light-emitting crystal grains 22a, 22b, and 22c can travel to the end of the light-transmitting indication area 12a' at a similar distance, thereby suppressing the problems of uneven light mixing and color deviation.

此外,前文以發光按鍵結構1、3分別說明發光晶粒22a、22b、22c與開關電路板20的電路及第一支架16、第二支架18間的相對位置關係,於其他實施例中,發光按鍵結構亦可能兼具兩種情形。例如開關接點202鄰近或位於第一支架16或第二支架18下方,發光晶粒22a、22b、22c則位於第一支架16或第二支架18下方。又例如,位於第一支架16或第二支架18下方的發光晶粒22a、22b、22c亦鄰近開關電路板20的電路。又,於實際應用中,各實施例中的部分結構特徵亦可能應用至其他實施例中。例如,當位於底板14下方的發光晶粒22a、22b、22c靠近開關電路板20的電路設置時,發光晶粒22a、22b、22c亦可能靠近底板14邊緣,而有前述發光按鍵結構3的適用。 In addition, the above text uses the light-emitting key structures 1 and 3 to respectively illustrate the relative positional relationship between the light-emitting chips 22a, 22b, 22c and the circuit of the switch circuit board 20 and the first bracket 16 and the second bracket 18. In other embodiments, the light-emitting key structure may also have both situations. For example, the switch contact 202 is adjacent to or located below the first bracket 16 or the second bracket 18, and the light-emitting chips 22a, 22b, 22c are located below the first bracket 16 or the second bracket 18. For another example, the light-emitting chips 22a, 22b, 22c located below the first bracket 16 or the second bracket 18 are also adjacent to the circuit of the switch circuit board 20. In addition, in actual applications, some structural features in each embodiment may also be applied to other embodiments. For example, when the light-emitting chips 22a, 22b, and 22c located below the base plate 14 are arranged close to the circuit of the switch circuit board 20, the light-emitting chips 22a, 22b, and 22c may also be close to the edge of the base plate 14, and the aforementioned light-emitting key structure 3 is applicable.

雖然本創作經由實際運用數據公開出光間距d1、d2、d3的前述較佳 實際操作範圍,但實際操作中利用本創作出光間距d1、d2、d3較佳實際操作範圍略為犧牲出光效果,仍能達到一定水準的整體光學設計效益,因此利用本創作出光間距d1、d2、d3較佳實際操作範圍端值加減的15%至20%,仍應屬本創作出光間距d1、d2、d3的涵蓋範圍。 Although this invention discloses the above-mentioned preferred practical operating range of the light emitting distances d1, d2, and d3 through actual application data, in actual operation, the preferred practical operating range of the light emitting distances d1, d2, and d3 of this invention is slightly sacrificed in light emitting effect, and a certain level of overall optical design benefit can still be achieved. Therefore, the addition or subtraction of 15% to 20% of the end value of the preferred practical operating range of the light emitting distances d1, d2, and d3 of this invention should still be within the coverage of the light emitting distances d1, d2, and d3 of this invention.

另外,於前述實施例中,發光晶粒22a、22b、22c(或發光晶粒22a'、22b'、22c'、或發光晶粒22a"、22b"、22c")於實作上可共同封裝在同一個封裝體中,或是晶粒個別封裝。又,於以單一封裝體封裝多個發光晶粒的情形中,該單一封裝體可封裝三個或更多個發光晶粒。例如,請參閱圖14及圖15,圖14為根據一第一實施例之一發光晶粒封裝體42之示意圖,圖15為圖14中發光晶粒封裝體42沿線W-W之剖面圖。發光晶粒封裝體42包含一載體420、放置於載體420上之複數個發光晶粒(於本實施例中包含三個發光晶粒422a、422b、422c)、及覆蓋該數個發光晶粒422a、422b、422c之一透光封裝材料424(其中,因透光封裝材料424可透光,發光晶粒422a、422b、422c的輪廓以細實線繪示於圖14中)。於本實施例中,載體420於其四周具有側牆420a,以形成一容置空間420b。發光晶粒422a、422b、422c容置於容置空間420b內,透光封裝材料424料充滿容置空間420b並覆蓋發光晶粒422a、422b、422c。於實作上,載體420可包含一導線架及與該導線架結合的容器(例如但不限於透過射出成型);為簡化圖面,載體420以簡單結構繪示於圖中。以發光晶粒422a為例,發光晶粒422a具有一頂發光表面及四個側發光表面,發光晶粒422a可自頂發光表面及側發光表面發射光線;發光晶粒422b、422c亦同,不另贅述。又,各發光晶粒422a、422b、422c的設置間距視實際製造工藝而定,不另贅述;例如使用mini-LED,其設置間距可為數百微米。 In addition, in the aforementioned embodiments, the light-emitting chips 22a, 22b, 22c (or the light-emitting chips 22a', 22b', 22c', or the light-emitting chips 22a", 22b", 22c") can be packaged together in the same package body in practice, or the chips can be packaged individually. In addition, in the case where a plurality of light-emitting chips are packaged in a single package body, the single package body can package three or more light-emitting chips. For example, please refer to FIG. 14 and FIG. 15. FIG. 14 is a light-emitting chip package body according to a first embodiment. FIG. 15 is a schematic diagram of the light-emitting chip package 42 along the line W-W in FIG. 14. The light-emitting chip package 42 includes a carrier 420, a plurality of light-emitting chips (including three light-emitting chips 422a, 422b, and 422c in this embodiment) placed on the carrier 420, and a light-transmitting packaging material 424 covering the plurality of light-emitting chips 422a, 422b, and 422c (wherein, since the light-transmitting packaging material 424 is light-transmitting, the light-emitting chips 422a, 422b, and 422c are transparent to light). The outline of the carrier 420 is shown in FIG. 14 with thin solid lines. In this embodiment, the carrier 420 has side walls 420a around it to form a receiving space 420b. The light-emitting chips 422a, 422b, and 422c are received in the receiving space 420b, and the light-transmitting packaging material 424 fills the receiving space 420b and covers the light-emitting chips 422a, 422b, and 422c. In practice, the carrier 420 may include a lead frame and a container combined with the lead frame (for example, but not limited to, by injection molding); The simplified diagram shows the carrier 420 in a simple structure. Taking the light-emitting crystal 422a as an example, the light-emitting crystal 422a has a top light-emitting surface and four side light-emitting surfaces. The light-emitting crystal 422a can emit light from the top light-emitting surface and the side light-emitting surface; the light-emitting crystals 422b and 422c are the same and will not be described separately. In addition, the arrangement spacing of each light-emitting crystal 422a, 422b, and 422c depends on the actual manufacturing process and will not be described separately; for example, when mini-LED is used, the arrangement spacing can be hundreds of microns.

此外,於本實施例中,載體420可以是不透光的,載體420可反射光線(例如使用白色材料製作載體420或於容置空間420b的內側表面塗覆反射塗 層,以增加光反射效率),或者控制白色材料厚度使其局部反射且半透光,都有助於提昇混光效果(即增加光線自透光封裝材料424的頂表面424a射出發光晶粒封裝體42時的均勻度)。又,於本實施例中,光線大致於垂直方向D1上自透光封裝材料424的頂表面424a射出發光晶粒封裝體42。於實作上,載體420可不包含突出的側牆420a。例如,於圖16中,載體420'不具有突出的側牆,使得光線亦能於水平方向D4a、D4b(以雙頭箭頭標示於圖中)上射出發光晶粒封裝體42;其中,透光封裝材料424'具有露出的側表面424b、424c,側表面424b平行於垂直方向D1及水平方向D4a,側表面424c平行於垂直方向D1及水平方向D4b。此外,水平方向D4a、D4b相互垂直,但實作上不以此為限。 In addition, in this embodiment, the carrier 420 may be opaque, the carrier 420 may reflect light (for example, the carrier 420 may be made of white material or a reflective coating may be applied to the inner surface of the accommodating space 420b to increase the light reflection efficiency), or the thickness of the white material may be controlled to make it partially reflective and semi-transparent, which is helpful to improve the light mixing effect (i.e., increase the uniformity of light when it is emitted from the top surface 424a of the transparent packaging material 424 to the light-emitting chip package 42). In addition, in this embodiment, the light is emitted from the top surface 424a of the transparent packaging material 424 to the light-emitting chip package 42 in the vertical direction D1. In practice, the carrier 420 may not include the protruding side wall 420a. For example, in FIG. 16 , the carrier 420 'does not have a protruding side wall, so that light can also be emitted from the light-emitting chip package 42 in the horizontal directions D4a and D4b (indicated by double-headed arrows in the figure); wherein the light-transmitting packaging material 424 'has exposed side surfaces 424b and 424c, the side surface 424b is parallel to the vertical direction D1 and the horizontal direction D4a, and the side surface 424c is parallel to the vertical direction D1 and the horizontal direction D4b. In addition, the horizontal directions D4a and D4b are perpendicular to each other, but this is not limited to the practice.

為簡化圖面,於圖17中(其為發光晶粒封裝體42(或42')之俯視配置圖),發光晶粒封裝體42或42'整體輪廓以單一粗方框繪示,其發光晶粒422a、422b、422c以細方框繪示,發光晶粒422a、422b、422c發射光線的顏色亦標示於圖中(例如紅色以R標示,綠色以G標示,藍色以B標示)。如圖14及圖17所示,於第一實施例中,發光晶粒422a、422b、422c呈平面分佈且均為單色發光晶粒;其中,發光晶粒422a發射紅光,發光晶粒422b發射綠光,發光晶粒422c發射藍光。如圖17所示,於發光晶粒422a、422b、422c中,於垂直於垂直方向D1之第一排列方向(即水平方向D4a)上排列(例如沿圖紙中的水平虛線)的相鄰兩個發光晶粒422a、422b發射不同色光(分別為紅光及綠光)。於發光晶粒封裝體42'的情形中(其具有露出的側表面424b,424c;相對的,於發光晶粒封裝體42的情形中,其透光封裝材料424的側表面則為突出的側牆420a所遮蓋),此配置可使發光晶粒封裝體42於垂直於水平方向D4a之方向上發射的光線不會僅有同一色光(以圖17圖紙的方向而言,於發光晶粒封裝體42的下側可同時直接接收到紅光及綠光),進而有助於於此方向上減少色彩偏差的程度。 To simplify the drawing, in FIG. 17 (which is a top view of the configuration of the light-emitting chip package 42 (or 42')), the overall outline of the light-emitting chip package 42 or 42' is drawn with a single thick box, and the light-emitting chips 422a, 422b, and 422c are drawn with thin boxes, and the color of the light emitted by the light-emitting chips 422a, 422b, and 422c is also marked in the figure (for example, red is marked with R, green is marked with G, and blue is marked with B). As shown in FIG. 14 and FIG. 17, in the first embodiment, the light-emitting chips 422a, 422b, and 422c are distributed in a plane and are all single-color light-emitting chips; wherein the light-emitting chip 422a emits red light, the light-emitting chip 422b emits green light, and the light-emitting chip 422c emits blue light. As shown in FIG. 17 , among the light-emitting chips 422a, 422b, and 422c, two adjacent light-emitting chips 422a and 422b arranged in a first arrangement direction (i.e., horizontal direction D4a) perpendicular to the vertical direction D1 (e.g., along the horizontal dotted line in the drawing) emit different colored lights (red light and green light, respectively). In the case of the light-emitting die package 42' (which has exposed side surfaces 424b, 424c; in contrast, in the case of the light-emitting die package 42, the side surface of its light-transmitting packaging material 424 is covered by the protruding side wall 420a), this configuration can make the light emitted by the light-emitting die package 42 in the direction perpendicular to the horizontal direction D4a not have only the same color light (in terms of the direction of Figure 17, the lower side of the light-emitting die package 42 can directly receive red light and green light at the same time), thereby helping to reduce the degree of color deviation in this direction.

同樣的,於垂直於垂直方向D1之第二排列方向(即水平方向D4b)上排 列(例如沿圖紙中右邊的垂直虛線)的相鄰兩個發光晶粒422b、422c發射不同色光(分別為綠光及藍光)。於發光晶粒封裝體42'的情形中,此配置可使發光晶粒封裝體42於垂直於水平方向D4b之方向上發射的光線不會僅有同一色光(以圖17圖紙的方向而言,於發光晶粒封裝體42的左側可同時直接接收到綠光及藍光),進而有助於於此方向上減少色彩偏差的程度。 Similarly, two adjacent light-emitting chips 422b and 422c arranged in the second arrangement direction (i.e., horizontal direction D4b) perpendicular to the vertical direction D1 (e.g., along the vertical dotted line on the right side of the drawing) emit different colored lights (green light and blue light, respectively). In the case of the light-emitting chip package 42', this configuration can make the light emitted by the light-emitting chip package 42 in the direction perpendicular to the horizontal direction D4b not have only the same color light (in terms of the direction of FIG. 17, the left side of the light-emitting chip package 42 can directly receive green light and blue light at the same time), thereby helping to reduce the degree of color deviation in this direction.

如圖16所示,發光晶粒422a、422b較其他發光晶粒422c鄰近發光晶粒封裝體42'的側表面424b排列。發光晶粒422a、422b分別具有平行於側表面424b的晶粒邊緣,且發光晶粒422a、422b平行於側表面424b排列。發光晶粒422a的一個側發光表面與側表面424b朝向同一方向;發光晶粒422b亦同,不另贅述。此外,前述關於發光晶粒封裝體42'之說明亦適用於發光晶粒封裝體42,不另贅述。 As shown in FIG. 16 , the light-emitting grains 422a and 422b are arranged closer to the side surface 424b of the light-emitting grain package 42' than the other light-emitting grains 422c. The light-emitting grains 422a and 422b respectively have grain edges parallel to the side surface 424b, and the light-emitting grains 422a and 422b are arranged parallel to the side surface 424b. A side light-emitting surface of the light-emitting grain 422a faces the same direction as the side surface 424b; the light-emitting grain 422b is the same and will not be described separately. In addition, the aforementioned description of the light-emitting grain package 42' is also applicable to the light-emitting grain package 42 and will not be described separately.

此外,如圖17所示,該複數個發光晶粒422a、422b、422c發射三種以上的色光(紅光、綠光及藍光),對應每一種色光的頂發光表面的面積相等(於本實施例中,發光晶粒422a、422b、422c的頂發光表面的面積相等)。但實作上發光晶粒封裝體42不以包含三個發光晶粒為限。請參閱圖18,其為根據一第二實施例之一發光晶粒封裝體43之俯視配置圖。發光晶粒封裝體43包含四個發光晶粒,分別發射綠光、藍光、綠光及紅光。前述發光晶粒封裝體42、42'之相關說明於此可適用者,亦有適用,不另贅述。又例如,如圖19所示,根據一第三實施例之一發光晶粒封裝體43a也是包含四個發光晶粒,分別發射綠光、藍光、綠光及紅光。同樣的,前述關於發光晶粒封裝體42、42'之相關說明於此可適用者,亦有適用,不另贅述。 In addition, as shown in FIG17 , the plurality of light-emitting crystals 422a, 422b, and 422c emit more than three colors of light (red light, green light, and blue light), and the area of the top light-emitting surface corresponding to each color of light is equal (in this embodiment, the area of the top light-emitting surface of the light-emitting crystals 422a, 422b, and 422c is equal). However, in practice, the light-emitting crystal package 42 is not limited to including three light-emitting crystals. Please refer to FIG18 , which is a top view of a configuration diagram of a light-emitting crystal package 43 according to a second embodiment. The light-emitting crystal package 43 includes four light-emitting crystals, which emit green light, blue light, green light, and red light, respectively. The relevant descriptions of the aforementioned light-emitting crystal packages 42 and 42' are applicable here and are also applicable, and will not be elaborated on separately. For another example, as shown in FIG. 19 , a light-emitting chip package 43a according to a third embodiment also includes four light-emitting chips, which respectively emit green light, blue light, green light and red light. Similarly, the above-mentioned descriptions of the light-emitting chip packages 42 and 42' are applicable here and are also applicable, and will not be elaborated on separately.

又例如,如圖20所示,根據一第四實施例之一發光晶粒封裝體43b包含五個發光晶粒,分別發射綠光、藍光、紅光、綠光及藍光。同樣的,前述關於發光晶粒封裝體42、42'之相關說明於此可適用者,亦有適用,不另贅述。 For another example, as shown in FIG. 20 , a light-emitting chip package 43b according to a fourth embodiment includes five light-emitting chips, which respectively emit green light, blue light, red light, green light and blue light. Similarly, the above-mentioned descriptions of the light-emitting chip packages 42 and 42' are applicable here and are also applicable, and will not be elaborated on separately.

又例如,如圖21所示,根據一第五實施例之一發光晶粒封裝體43c包 含六個發光晶粒,分別發射綠光、藍光、紅光、綠光及藍光。同樣的,前述關於發光晶粒封裝體42、42'之相關說明於此可適用者,亦有適用,不另贅述。 For another example, as shown in FIG. 21 , a light-emitting chip package 43c according to a fifth embodiment includes six light-emitting chips, which emit green light, blue light, red light, green light and blue light respectively. Similarly, the above-mentioned descriptions of the light-emitting chip packages 42 and 42' are applicable here and are also applicable, and will not be elaborated on separately.

又例如,如圖22所示,根據一第六實施例之一發光晶粒封裝體43d包含八個發光晶粒,分別發射綠光、紅光、藍光、綠光、紅光、綠光、藍光及紅光。同樣的,前述關於發光晶粒封裝體42、42'之相關說明於此可適用者,亦有適用,不另贅述。另外,此外,於本實施例中,發光晶粒封裝體43d的發光晶粒呈一矩形環狀排列,沿該矩形環狀的任兩個相鄰的發光晶粒發射不同色光。 For another example, as shown in FIG. 22 , a light-emitting chip package 43d according to a sixth embodiment includes eight light-emitting chips, which respectively emit green light, red light, blue light, green light, red light, green light, blue light and red light. Similarly, the above-mentioned descriptions of the light-emitting chip packages 42 and 42' are applicable here and are also applicable, and are not further described. In addition, in this embodiment, the light-emitting chips of the light-emitting chip package 43d are arranged in a rectangular ring, and any two adjacent light-emitting chips along the rectangular ring emit different colors of light.

於前述發光晶粒封裝體42、42'、43a、43b、43c、43d的實施例中,各發光晶粒至少有一側朝外;例如,如圖22所示的發光晶粒封裝體43d中(以圖22的圖紙的方向而言),右側的藍光發光晶粒的右側及上側均朝外,右側的綠光發光晶粒的右側朝外,右側的紅光發光晶粒的右側及下側均朝外,中間的紅光發光晶粒的上側均朝外,中間的綠光發光晶粒的下側均朝外,等等。此配置有助於提昇發光晶粒封裝體自其側面射出光線的利用率。但實作上不以此為限。例如於圖22中虛線框所在的位置亦設置發光晶粒。 In the embodiments of the aforementioned light-emitting chip packages 42, 42', 43a, 43b, 43c, and 43d, at least one side of each light-emitting chip faces outward; for example, in the light-emitting chip package 43d shown in FIG. 22 (in terms of the direction of the drawing of FIG. 22), the right side and the upper side of the blue light-emitting chip on the right side face outward, the right side of the green light-emitting chip on the right side faces outward, the right side and the lower side of the red light-emitting chip on the right side face outward, the upper side of the red light-emitting chip in the middle faces outward, the lower side of the green light-emitting chip in the middle faces outward, and so on. This configuration helps to improve the utilization rate of the light emitted from the side of the light-emitting chip package. However, the implementation is not limited to this. For example, a light-emitting chip is also set at the location of the dashed frame in Figure 22.

於實際應用中,前述發光晶粒封裝體42、42'、43a、43b、43c、43d可直接取代前述發光晶粒22a、22b、22c、發光晶粒22a'、22b'、22c'、或發光晶粒22a"、22b"、22c"而設置於發光按鍵結構1、3中。例如,發光晶粒封裝體43d(如圖19所示)取代圖4A中(發光按鍵結構1的)發光晶粒22a,22b,22c而固定於光源電路板24(可併參閱圖2)上,其俯視配置如圖23所示,剖面配置如圖24所示(相當於圖3中發光晶粒22a、22b、22c以發光晶粒封裝體43d取代)。開關電路板20(可併參閱圖2)的電路(包含開關接點202)於垂直方向D1上不重疊。於發光晶粒封裝體43d中,該複數個發光晶粒中於水平方向D3(垂直於垂直方向D1)上較其他發光晶粒靠近開關接點202的平邊202a的多個發光晶粒(即以圖23的圖紙的方向而言,下側的藍光發光晶粒、綠光發光晶粒、紅光發光晶粒)平行於平邊202a排列(即沿方 向D2排列)。 In practical applications, the aforementioned light-emitting chip packages 42, 42', 43a, 43b, 43c, 43d can directly replace the aforementioned light-emitting chips 22a, 22b, 22c, light-emitting chips 22a', 22b', 22c', or light-emitting chips 22a", 22b", 22c" and be disposed in the light-emitting key structures 1, 3. For example, the light-emitting chip package 43d (as shown in FIG. 19) replaces the light-emitting chips 22a, 22b, 22c (of the light-emitting key structure 1) in FIG. 4A and is fixed on the light source circuit board 24 (see FIG. 2), and its top view configuration is shown in FIG. 23, and its cross-sectional configuration is shown in FIG. 24 ( Equivalent to the light-emitting chips 22a, 22b, and 22c in FIG. 3 being replaced by the light-emitting chip package 43d). The circuit (including the switch contact 202) of the switch circuit board 20 (see FIG. 2) does not overlap in the vertical direction D1. In the light-emitting chip package 43d, the plurality of light-emitting chips that are closer to the flat edge 202a of the switch contact 202 than other light-emitting chips in the horizontal direction D3 (perpendicular to the vertical direction D1) (i.e., the blue light-emitting chips, green light-emitting chips, and red light-emitting chips on the lower side in terms of the direction of the drawing of FIG. 23) are arranged parallel to the flat edge 202a (i.e., arranged along the direction D2).

此外,如圖24所示,發光晶粒封裝體43d位於底板14的通孔142內,開關接點202及發光晶粒封裝體43d於底板14上之垂直投影均落於通孔142內。發光晶粒封裝體43d於垂直方向D1上不超出底板14的上表面142c(即發光晶粒封裝體43d的頂表面(例如透光封裝材料424的頂表面424a,可參閱圖14或圖15)低於或等於上表面142c)。 In addition, as shown in FIG. 24 , the light-emitting chip package 43d is located in the through hole 142 of the bottom plate 14, and the vertical projections of the switch contact 202 and the light-emitting chip package 43d on the bottom plate 14 both fall within the through hole 142. The light-emitting chip package 43d does not exceed the upper surface 142c of the bottom plate 14 in the vertical direction D1 (i.e., the top surface of the light-emitting chip package 43d (e.g., the top surface 424a of the light-transmitting packaging material 424, see FIG. 14 or FIG. 15 ) is lower than or equal to the upper surface 142c).

於此例中,通孔142(如圖2所示)呈圓形,但實作上不以此為限。例如,於通孔142之一變化例中,底板14的通孔142'(其輪廓投影以虛線繪示於圖23中)有一部分圓弧邊緣與開關接點202的圓弧邊緣平行,另一側則由三個彼此垂直的邊緣(即三個平直孔緣142a'、142b'、142c'),整體構成子彈形的通孔。其中,以圖23的圖紙的方向而言,發光晶粒封裝體43d中左側相鄰的的發光晶粒(即左側的藍光發光晶粒、紅光發光晶粒、綠光發光晶粒)於垂直於垂直方向D1之水平方向(即相當於方向D2)較其他發光晶粒靠近孔緣142b'且平行於平直孔緣142b'排列(即沿方向D3排列)(或謂垂直於平直孔緣142a'排列)。藉此,孔緣142b'對發光晶粒封裝體43d中左側發光晶粒的遮蔽情形相近,此有助於減少孔緣142b'對發光晶粒封裝體43d提供的背光均勻性的影響。對於平直孔緣142a'、142c',發光晶粒封裝體43d中亦有鄰近平直孔緣142a'、142c'對應的發光晶粒平行排列的配置,不另贅述。 In this example, the through hole 142 (as shown in FIG. 2 ) is circular, but the embodiment is not limited thereto. For example, in a variation of the through hole 142, a through hole 142' (its outline projection is shown in FIG. 23 as a dotted line) of the bottom plate 14 has a portion of an arc edge parallel to the arc edge of the switch contact 202, and the other side has three edges perpendicular to each other (i.e., three straight hole edges 142a', 142b', 142c'), forming a bullet-shaped through hole as a whole. In terms of the direction of the drawing of FIG. 23 , the adjacent light-emitting chips on the left side of the light-emitting chip package 43d (i.e., the blue light-emitting chip, the red light-emitting chip, and the green light-emitting chip on the left side) are closer to the hole edge 142b' than other light-emitting chips in the horizontal direction perpendicular to the vertical direction D1 (i.e., equivalent to the direction D2) and are arranged parallel to the straight hole edge 142b' (i.e., arranged along the direction D3) (or arranged perpendicular to the straight hole edge 142a'). Thus, the shielding conditions of the light-emitting chips on the left side of the light-emitting chip package 43d by the hole edge 142b' are similar, which helps to reduce the influence of the hole edge 142b' on the backlight uniformity provided by the light-emitting chip package 43d. For the straight hole edges 142a' and 142c', the light-emitting chip package 43d also has a configuration in which the light-emitting chips corresponding to the straight hole edges 142a' and 142c' are arranged in parallel, which will not be described separately.

又例如,於通孔142之另一變化例中,如圖25所示,底板14的通孔143(其輪廓以粗實線繪示於圖中)包含一主孔部143a及自主孔部143a之兩側延伸之二延伸部143b,開關接點202'於底板14上之垂直投影(以細實線繪示於圖中)落於主孔部143a內,發光晶粒封裝體43d於底板14上之垂直投影(以細實線繪示於圖中)落於其中一個延伸部143b內。於本實施例中,對應另一個延伸部143b亦設置有發光晶粒封裝體43d(以虛線繪示於圖中)。藉此,開關接點202'也能直接避開 遮蓋發光晶粒封裝體43d。另外,該二延伸部143b呈180度配置,但實作上不以此為限;例如,該二延伸部143b可呈120度配置(邏輯上此仍屬於主孔部143a兩側配置之情形)。 For another example, in another variation of the through hole 142, as shown in FIG. 25, the through hole 143 of the bottom plate 14 (whose outline is shown in the figure with a thick solid line) includes a main hole portion 143a and two extension portions 143b extending from both sides of the main hole portion 143a, and the vertical projection of the switch contact 202' on the bottom plate 14 (shown in the figure with a thin solid line) falls within the main hole portion 143a, and the vertical projection of the light-emitting chip package 43d on the bottom plate 14 (shown in the figure with a thin solid line) falls within one of the extension portions 143b. In this embodiment, a light-emitting chip package 43d (shown in the figure with a dotted line) is also provided corresponding to the other extension portion 143b. In this way, the switch contact 202' can also directly avoid covering the light-emitting chip package 43d. In addition, the two extensions 143b are arranged at 180 degrees, but this is not limited to practice; for example, the two extensions 143b can be arranged at 120 degrees (logically, this still belongs to the situation of being arranged on both sides of the main hole 143a).

又例如,於通孔142之另一變化例中,如圖26所示,底板14的通孔143'(其輪廓以粗實線繪示於圖中)。開關接點202"於底板14上之垂直投影(以細實線繪示於圖中)落於通孔143'外且緊鄰通孔143'。發光晶粒封裝體43d於底板14上之垂直投影(以細實線繪示於圖中)落於通孔143'內。藉此,開關接點202"也能直接避開遮蓋發光晶粒封裝體43d。此外,通孔143'呈扇形且(於圖26之視角)緊貼通孔143'內緣延伸。另外,於實作上,可於開關接點202"的另一側相對設置通孔143'(以虛線繪示於圖中),對應此通孔143'亦設置有發光晶粒封裝體43d(以虛線繪示於圖中)。又,於實作上,扇形延伸對應的圓心角不以圖中顯示小於180度的情形為限,且此兩個通孔143'不以相同輪廓且對稱設置的配置為限。於本實施例中,通孔143'是避開電路佈局而設置,故於實作上通孔143'亦可能呈C形輪廓(例如修改圖中開關接點202"的引線以使其位於同側),但實作上不以此為限。又,於實作上,通孔143'的輪廓亦不以扇形為限。 For another example, in another variation of the through hole 142, as shown in FIG26, the through hole 143' of the base plate 14 (its outline is shown in the figure with a thick solid line). The vertical projection of the switch contact 202" on the base plate 14 (shown in the figure with a thin solid line) falls outside the through hole 143' and is adjacent to the through hole 143'. The vertical projection of the light-emitting chip package 43d on the base plate 14 (shown in the figure with a thin solid line) falls inside the through hole 143'. In this way, the switch contact 202" can also directly avoid covering the light-emitting chip package 43d. In addition, the through hole 143' is fan-shaped and (from the viewing angle of FIG26) extends closely to the inner edge of the through hole 143'. In addition, in practice, a through hole 143' (shown in dotted lines in the figure) can be provided on the other side of the switch contact 202", and a light-emitting chip package 43d (shown in dotted lines in the figure) is also provided corresponding to the through hole 143'. In addition, in practice, the central angle corresponding to the fan-shaped extension is not limited to the situation shown in the figure that is less than 180 degrees, and the two through holes 143' are not limited to the configuration of the same outline and symmetrical arrangement. In this embodiment, the through hole 143' is provided to avoid the circuit layout, so in practice the through hole 143' may also have a C-shaped outline (for example, modifying the lead of the switch contact 202" in the figure to be located on the same side), but the practice is not limited to this. In addition, in practice, the outline of the through hole 143' is not limited to a fan-shaped.

於前文中,如圖8所示,發光晶粒22a,22b,22c與導線段204錯開設置(即於垂直方向D1不重疊)。同理,於實際應用中,發光晶粒22a、22b、22c亦得以發光晶粒封裝體43d取代,如圖27所示。導線段204呈直線延伸。於發光晶粒封裝體43d中,該複數個發光晶粒中於水平方向D3'(垂直於垂直方向D1)上較其他發光晶粒靠近導線段204的多個發光晶粒(即以圖27的圖紙的方向而言,左側的綠光發光晶粒、紅光發光晶粒、藍光發光晶粒(例如參閱圖22))鄰近導線段204平行排列(即沿方向D2'排列)。前文關於圖8及圖9之相關說明於此可適用者,亦有適用,不另贅述。 In the foregoing, as shown in FIG8 , the light-emitting chips 22a, 22b, 22c and the wire segment 204 are staggered (i.e., they do not overlap in the vertical direction D1). Similarly, in actual applications, the light-emitting chips 22a, 22b, 22c can also be replaced by a light-emitting chip package 43d, as shown in FIG27 . The wire segment 204 extends in a straight line. In the light-emitting chip package 43d, a plurality of light-emitting chips among the plurality of light-emitting chips that are closer to the wire segment 204 than other light-emitting chips in the horizontal direction D3' (perpendicular to the vertical direction D1) (i.e., in terms of the direction of the drawing of FIG27 , the green light-emitting chip, the red light-emitting chip, and the blue light-emitting chip on the left side (e.g., see FIG22 )) are arranged in parallel (i.e., arranged along the direction D2') adjacent to the wire segment 204. The previous explanations about Figures 8 and 9 are also applicable here and will not be elaborated on separately.

於前文中,如圖11A所示,發光晶粒22a,22b,22c位於其中一支架(例 如第一支架16)下方。於實際應用中,發光晶粒22a、22b、22c亦得以發光晶粒封裝體43d取代,如圖28所示。於發光晶粒封裝體43d中,該複數個發光晶粒中於垂直於垂直方向D1之一水平方向D3"上較其他發光晶粒靠近間隙投影G(具有一長度方向,相當於方向D2";間隙投影G大致延此長度方向延伸)的多個發光晶粒(即以圖28的圖紙的方向而言,左側的綠光發光晶粒、紅光發光晶粒、藍光發光晶粒(例如參閱圖22))平行於該長度方向排列且具有平行於該長度方向的晶粒邊緣(例如上述發光晶粒的左側邊緣)。藉此,間隙投影G對發光晶粒封裝體43d中左側發光晶粒的遮蔽情形相近,此有助於減少間隙投影G對發光晶粒封裝體43d提供的背光均勻性的影響。又,於此實施例中,發光晶粒封裝體43d完全位於第一支架16的下方,使得發光晶粒封裝體43d各發光晶粒發射的光線能以相近的路徑行進,進而減少該光線穿過第一支架16後可能產生色偏的程度。前文圖11A之相關說明於此可適用者,亦有適用,不另贅述。例如,發光晶粒封裝體43d可改設置於第二支架18的下方(如圖中以虛線繪示的發光晶粒封裝體43d)。 In the above text, as shown in FIG11A , the light-emitting chips 22a, 22b, 22c are located under one of the brackets (e.g., the first bracket 16). In actual applications, the light-emitting chips 22a, 22b, 22c can also be replaced by a light-emitting chip package 43d, as shown in FIG28 . In the light-emitting chip package 43d, among the plurality of light-emitting chips, a plurality of light-emitting chips that are closer to the gap projection G (having a length direction, equivalent to the direction D2"; the gap projection G extends roughly along this length direction) in a horizontal direction D3" perpendicular to the vertical direction D1 than other light-emitting chips (i.e., in terms of the direction of the drawing of FIG. 28, the green light-emitting chip, the red light-emitting chip, and the blue light-emitting chip on the left side (for example, see FIG. 22)) are arranged parallel to the length direction and have chip edges parallel to the length direction (for example, the left side edge of the above-mentioned light-emitting chip). Thereby, the shielding conditions of the gap projection G on the left side light-emitting chip in the light-emitting chip package 43d are similar, which helps to reduce the influence of the gap projection G on the backlight uniformity provided by the light-emitting chip package 43d. Furthermore, in this embodiment, the light-emitting chip package 43d is completely located below the first bracket 16, so that the light emitted by each light-emitting chip in the light-emitting chip package 43d can travel along a similar path, thereby reducing the degree of color deviation that may be generated after the light passes through the first bracket 16. The relevant description of Figure 11A above is also applicable here and is not repeated. For example, the light-emitting chip package 43d can be changed to be located below the second bracket 18 (such as the light-emitting chip package 43d shown in dotted lines in the figure).

於前文中,如圖7、圖13A及圖13B所示,發光晶粒22a,22b,22c整體於垂直方向D1與可透光指示區域12a、12a'重疊。於實際應用中,發光晶粒22a、22b、22c亦得以發光晶粒封裝體43d取代。如圖29所示,可透光指示區域12a'呈長方形,其上可定義長軸12c'及短軸12d'(均以鏈線表示於圖中),長軸12c'平行於長度方向12b',短軸12d'垂直於長度方向12b'(且亦平行於方向D2")。可透光指示區域12a'的幾何中心(相當於長軸12c'及短軸12d'交點)與發光晶粒封裝體43d於垂直方向D1上重疊(或謂幾何中心落於發光晶粒封裝體43d範圍內)。進一步來說,於本實施例中,可透光指示區域12a'的幾何中心與發光晶粒封裝體43d的幾何中心重合;但實作上不以此為限。例如發光晶粒封裝體43d的幾何中心偏離可透光指示區域12a'的幾何中心,如圖中以虛線繪示之發光晶粒封裝體43d。其中,此時發光晶粒封裝體43d整體的垂直投影仍落於可透光指示區域12a'的範圍內),但實作 上仍不以此為限;例如發光晶粒封裝體43d整體的垂直投影部分超出可透光指示區域12a'的範圍(例如於圖13A中,發光晶粒22a、22c的垂直投影均超出可透光指示區域12a'的範圍,故發光晶粒22a、22b、22c整體的垂直投影即影部分超出可透光指示區域12a'的範圍)。此外,於本實施例中,可透光指示區域12a'包含複數個可透光字符(如圖中"Legend"字樣),沿長度方向12b'排列。發光晶粒封裝體43d中的發光晶粒的晶粒邊緣平行或垂直於長度方向12b'(例如左上角的發光晶粒,綠光發光晶粒,其上下側邊緣平行於長度方向12b'(即平行於長軸12c')、其左右側邊緣垂直於長度方向12b')。前文圖7、圖13A及圖13B之相關說明於此可適用者,亦有適用,不另贅述。 In the above, as shown in FIG7, FIG13A and FIG13B, the luminescent chips 22a, 22b, 22c are entirely overlapped with the light-transmissive indicating regions 12a, 12a' in the vertical direction D1. In practical applications, the luminescent chips 22a, 22b, 22c can also be replaced by the luminescent chip package 43d. As shown in FIG. 29 , the light-transmitting indication area 12a′ is rectangular, on which a long axis 12c′ and a short axis 12d′ (both indicated by chain lines in the figure) can be defined. The long axis 12c′ is parallel to the long direction 12b′, and the short axis 12d′ is perpendicular to the long direction 12b′ (and also parallel to the direction D2″). The geometric center of the light-transmitting indication area 12a′ (equivalent to the intersection of the long axis 12c′ and the short axis 12d′) overlaps with the light-emitting chip package 43d in the vertical direction D1 (or the geometric center falls on the light-emitting chip package 43d). Further, in this embodiment, the geometric center of the light-transmissive indication area 12a' coincides with the geometric center of the light-emitting chip package 43d; however, this is not limited to the practice. For example, the geometric center of the light-emitting chip package 43d deviates from the geometric center of the light-transmissive indication area 12a', as shown in the light-emitting chip package 43d shown by the dotted line in the figure. At this time, the vertical projection of the entire light-emitting chip package 43d still falls within the range of the light-transmissive indication area 12a') , but the implementation is not limited to this; for example, the vertical projection of the entire luminescent chip package 43d exceeds the range of the light-transmitting indication area 12a' (for example, in Figure 13A, the vertical projections of the luminescent chips 22a and 22c all exceed the range of the light-transmitting indication area 12a', so the vertical projection of the entire luminescent chips 22a, 22b, and 22c exceeds the range of the light-transmitting indication area 12a'). In addition, in this embodiment, the light-transmitting indication area 12a' includes a plurality of light-transmitting characters. Legend (such as the word "Legend" in the figure) is arranged along the length direction 12b'. The grain edges of the light-emitting grains in the light-emitting grain package 43d are parallel or perpendicular to the length direction 12b' (for example, the light-emitting grain in the upper left corner, the green light-emitting grain, has its upper and lower side edges parallel to the length direction 12b' (i.e. parallel to the long axis 12c'), and its left and right side edges are perpendicular to the length direction 12b'). The relevant descriptions of Figures 7, 13A and 13B above are also applicable here and are not elaborated separately.

前述以發光晶粒封裝體43d取代發光晶粒22a、22b、22c為例說明。原則上,亦得以發光晶粒封裝體42、42'、43a、43b、43c、43d取代前述發光晶粒22a、22b、22c、發光晶粒22a'、22b'、22c'、或發光晶粒22a"、22b"、22c"而應用至各實施例中,不另贅述。 The above description uses the light-emitting chip package 43d to replace the light-emitting chips 22a, 22b, and 22c as an example. In principle, the light-emitting chip packages 42, 42', 43a, 43b, 43c, and 43d can also replace the light-emitting chips 22a, 22b, and 22c, the light-emitting chips 22a', 22b', and 22c', or the light-emitting chips 22a", 22b", and 22c" and be applied to various embodiments, which will not be described in detail.

另外,於實作上,前述各實施例可撘配導光片導引、混合由發光晶粒封裝體42、42'、43a、43b、43c、43d、發光晶粒22a、22b、22c、22a'、22b'、22c'、22a"、22b"、22c"所射出的光線。請參閱圖30,其繪示之發光按鍵結構4與發光按鍵結構1相似,故發光按鍵結構4沿用發光按鍵結構1之元件符號。關於發光按鍵結構4之其他說明,請參閱前文中發光按鍵結構1及其變化例之相關說明,不另贅述。發光按鍵結構4大致上與發光按鍵結構1主要差異在於發光按鍵結構4更包含一導光片28,設置於底板14下方。導光片28具有一容置槽282(例如以通孔實作),發光晶粒封裝體43d(或其他發光晶粒封裝體42、42'、43a、43b、43c)位於容置槽282內,使得發光晶粒封裝體43d發射的光線自容置槽282的內壁面282a進入導光片28。進入導光片28內的光線將可自導光片28的上表面284離開導光片28。如圖30中,底板14於其通孔142處未遮蔽導光片28,故光線可經此向 上照向鍵帽12。就結構特性而言,底板14原則上具有不透光的效果,故其可同時作為遮罩層。另外,於本實施例中,開關電路板20的開關接點202於底板14上的投影亦落於通孔142內,但實作上不以此為限。例如,開關接點202移至他處(遠離通孔142)或於開關接點202下方亦有底板14的實體結構,使得自導光片28的上表面284離開的光線不會直接照射到開關接點202,此有助於減少開關電路板20電路反射光線可能造成的影響(例如反射光顏色改變)。 In addition, in practice, the aforementioned embodiments can be matched with a light guide sheet to guide and mix the light emitted by the light-emitting chip package 42, 42', 43a, 43b, 43c, 43d, and the light-emitting chips 22a, 22b, 22c, 22a', 22b', 22c', 22a", 22b", 22c". Please refer to FIG. 30, the light-emitting key structure 4 shown therein is similar to the light-emitting key structure 1, so the light-emitting key structure 4 uses the component symbols of the light-emitting key structure 1. For other descriptions of the light key structure 4, please refer to the descriptions of the light key structure 1 and its variations in the previous text, which will not be elaborated on separately. The light key structure 4 is generally different from the light key structure 1 in that the light key structure 4 further includes a light guide plate 28 disposed below the bottom plate 14. The light guide plate 28 has a receiving groove 282 (for example, implemented as a through hole), and the light emitting chip package 43d (or other light emitting chip packages 42, 42', 43a, 43b, 43c) is located in the receiving groove 282. The light emitted by the light-emitting chip package 43d enters the light guide plate 28 from the inner wall surface 282a of the receiving groove 282. The light entering the light guide plate 28 can leave the light guide plate 28 from the upper surface 284 of the light guide plate 28. As shown in FIG. 30, the bottom plate 14 does not shield the light guide plate 28 at its through hole 142, so the light can pass through it to shine upward toward the key cap 12. In terms of structural characteristics, the bottom plate 14 has a light-proof effect in principle, so it can also serve as a mask layer. In addition, in this embodiment, The projection of the switch contact 202 of the switch circuit board 20 on the bottom plate 14 also falls within the through hole 142, but this is not limited to this in practice. For example, the switch contact 202 is moved to another place (away from the through hole 142) or there is a physical structure of the bottom plate 14 below the switch contact 202, so that the light leaving the upper surface 284 of the light guide sheet 28 will not directly irradiate the switch contact 202, which helps to reduce the impact of the light reflected from the switch circuit board 20 (such as the change in the color of the reflected light).

此外,於實作上,可另外於導光片28的上表面284上設置一遮罩層30,用於導光片28的遮蔽設計,如圖31所示。於實作上,遮罩層30可由不透光的薄片實作,設置於該發光晶粒封裝體的正上方,遮蓋容置槽282(連同容置其中的發光晶粒封裝體43d),並於所需區域形成透光區302a(例如透過對此薄片鏤空實現),例如對應通孔142處形成。透光區302a設置的數量、輪廓可產品需求而設計,不必受到底板14本身結構設計而帶來的困擾(例如為形成支架的連接結構而產生鏤空結構所帶來漏光的現象)。於本實施例中,透光區302a於底板14上之垂直投影落於通孔142內。另外,於實作上,容置槽282不以通孔實作為限。例如以盲孔或凹槽實作容置槽,此時容置槽開口朝下,不會連通上表面284,前述遮罩層30可由一不透光塗佈層實作,塗佈於上表面284上(例如但不限於透過印刷的方式)。 In addition, in practice, a mask layer 30 may be provided on the upper surface 284 of the light guide plate 28 for shielding the light guide plate 28, as shown in FIG31. In practice, the mask layer 30 may be implemented by a light-proof thin sheet, provided just above the light-emitting chip package, covering the receiving groove 282 (together with the light-emitting chip package 43d received therein), and forming a light-transmitting area 302a in a desired area (for example, by hollowing out the thin sheet), for example, corresponding to the through hole 142. The number and outline of the light-transmitting area 302a may be designed according to product requirements, without being disturbed by the structural design of the bottom plate 14 itself (for example, light leakage caused by a hollowed-out structure formed to form a connection structure of a bracket). In this embodiment, the vertical projection of the light-transmitting area 302a on the bottom plate 14 falls within the through hole 142. In addition, in practice, the receiving groove 282 is not limited to the through hole. For example, the receiving groove is implemented as a blind hole or a groove, and the opening of the receiving groove faces downward and is not connected to the upper surface 284. The aforementioned mask layer 30 can be implemented by an opaque coating layer and coated on the upper surface 284 (for example, but not limited to, by printing).

請參閱圖32及圖33;其中,於圖33中,開關接點203c輪廓以細實線繪示,發光晶粒封裝體43d輪廓以粗線方框繪示,導光片28'的容置槽282及遮罩層30'的透光區302b的輪廓以虛線繪示。於此例中,開關接點203c、導光片28'的容置槽282(連同發光晶粒封裝體43d)及導光片28'的透光區302b於底板14上之垂直投影均落於通孔142內。又,發光晶粒封裝體43d位於開關接點203c下方;從另一方面而言,開關接點203c與發光晶粒封裝體43d於垂直方向D1上重疊。遮罩層30'的兩個透光區302b設置於發光晶粒封裝體43d於遮罩層30'上投影的周圍;於 本實施例中,透光區302b呈扇狀(如圖33所示),對稱設置並繞著發光晶粒封裝體43d於遮罩層30'上的投影延伸。於本實施例中,透光區302b亦是繞著開關接點203c於遮罩層30'上的投影延伸;並且透光區302b是大致上緊鄰開關接點203c於遮罩層30'上的投影延伸。此外,於實作上,扇形延伸對應的圓心角不以圖中顯示小於180度的情形為限,且此兩透光區302b不以相同輪廓且對稱設置的配置為限。於本實施例中,透光區302b是避開電路佈局設置,故於實作上透光區302b亦可能呈C形輪廓(例如修改圖中開關接點203c的引線以使其位於同側),但實作上不以此為限。又,於實作上,透光區302b的輪廓亦不以扇形為限。從另一方面來說,遮罩層30的不透光部分於底板14上之垂直投影至少局部地落於通孔142內。例如,如圖32所示,遮罩層30位於發光晶粒封裝體43d上方的部分(可定義為一不透光區)落於通孔142內;又例如,於圖32中,遮罩層30左側部分(可定義為一不透光區)形成透光區302b一部分的輪廓,此部分於底板14上之垂直投影局部地落於通孔142內。 Please refer to FIG. 32 and FIG. 33 ; in FIG. 33 , the outline of the switch contact 203c is shown in thin solid lines, the outline of the light-emitting chip package 43d is shown in thick boxes, and the outlines of the receiving groove 282 of the light guide plate 28' and the light-transmitting area 302b of the mask layer 30' are shown in dotted lines. In this example, the vertical projections of the switch contact 203c, the receiving groove 282 of the light guide plate 28' (together with the light-emitting chip package 43d) and the light-transmitting area 302b of the light guide plate 28' on the bottom plate 14 all fall within the through hole 142. In addition, the light-emitting chip package 43d is located below the switch contact 203c; on the other hand, the switch contact 203c and the light-emitting chip package 43d overlap in the vertical direction D1. The two light-transmitting areas 302b of the mask layer 30' are arranged around the projection of the light-emitting chip package 43d on the mask layer 30'; in this embodiment, the light-transmitting areas 302b are fan-shaped (as shown in FIG. 33), symmetrically arranged and extending around the projection of the light-emitting chip package 43d on the mask layer 30'. In this embodiment, the light-transmitting areas 302b also extend around the projection of the switch contact 203c on the mask layer 30'; and the light-transmitting areas 302b extend substantially adjacent to the projection of the switch contact 203c on the mask layer 30'. In addition, in practice, the central angle corresponding to the fan-shaped extension is not limited to the situation shown in the figure that is less than 180 degrees, and the two light-transmitting areas 302b are not limited to the configuration of the same outline and symmetrical arrangement. In this embodiment, the light-transmitting area 302b is arranged to avoid the circuit layout, so in practice the light-transmitting area 302b may also be in a C-shaped outline (for example, the lead wires of the switch contact 203c in the figure are modified to be located on the same side), but the practice is not limited to this. In addition, in practice, the outline of the light-transmitting area 302b is not limited to a fan shape. On the other hand, the vertical projection of the opaque portion of the mask layer 30 on the bottom plate 14 at least partially falls within the through hole 142. For example, as shown in FIG. 32 , the portion of the mask layer 30 located above the light-emitting chip package 43d (which can be defined as a light-proof area) falls within the through hole 142; for another example, in FIG. 32 , the left side portion of the mask layer 30 (which can be defined as a light-proof area) forms the outline of a portion of the light-transmitting area 302b, and the vertical projection of this portion on the bottom plate 14 partially falls within the through hole 142.

另外,於此實施例中,實作上亦可於開關接點203c與遮罩層30'間亦有底板14的實體結構,可提供開關接點203c結構支撐,如圖34所示。於此實施例中,底板14對應透光區302b形成通孔145,以露出對應的透光區302b。於實作上,通孔145也可以是(但不限於)呈扇形且輪廓與透光區302b相似。開關接點203c於底板14上之垂直投影落於通孔145外且緊鄰通孔145。 In addition, in this embodiment, there may also be a physical structure of the bottom plate 14 between the switch contact 203c and the mask layer 30', which can provide structural support for the switch contact 203c, as shown in FIG34. In this embodiment, the bottom plate 14 forms a through hole 145 corresponding to the light-transmitting area 302b to expose the corresponding light-transmitting area 302b. In practice, the through hole 145 may also be (but not limited to) fan-shaped and have a similar outline to the light-transmitting area 302b. The vertical projection of the switch contact 203c on the bottom plate 14 falls outside the through hole 145 and is adjacent to the through hole 145.

以上所述僅為本創作之較佳實施例,凡依本新型申請專利範圍所做之均等變化與修飾,皆應屬本創作之涵蓋範圍。 The above is only the best embodiment of this creation. All equivalent changes and modifications made according to the scope of this new patent application should be covered by this creation.

142':通孔 142': Through hole

142a',142b',142c':孔緣 142a',142b',142c': Kong Yuan

20:開關電路板 20: Switch circuit board

202:開關接點 202: switch contact

202a:平邊 202a: Flat edge

43d:發光晶粒封裝體 43d: Light-emitting chip package

D1:垂直方向 D1: vertical direction

D2:排列方向 D2: Arrangement direction

D3:水平方向 D3: Horizontal direction

Claims (20)

一種發光按鍵結構,包含:一底板;一鍵帽,於一垂直方向上可移動地設置於該底板上方;以及一發光晶粒封裝體,設置於該鍵帽下方且包含複數個發光晶粒,該複數個發光晶粒均為單色發光晶粒,其中,該複數個發光晶粒中於垂直於該垂直方向之一第一排列方向上排列的相鄰三個發光晶粒發射三種不同色光,該第一排列方向與該相鄰三個發光晶粒的長邊分別平行。 A light-emitting key structure comprises: a base plate; a key cap movably disposed above the base plate in a vertical direction; and a light-emitting crystal package disposed below the key cap and comprising a plurality of light-emitting crystals, wherein the plurality of light-emitting crystals are all single-color light-emitting crystals, wherein three adjacent light-emitting crystals arranged in a first arrangement direction perpendicular to the vertical direction emit three different colors of light, and the first arrangement direction is parallel to the long sides of the three adjacent light-emitting crystals. 如請求項1所述之發光按鍵結構,其中該發光晶粒封裝體包含一透光封裝材料,覆蓋該複數個發光晶粒,該透光封裝材料具有一側表面,平行於該第一排列方向及該垂直方向。 The light-emitting key structure as described in claim 1, wherein the light-emitting chip package body comprises a light-transmitting packaging material covering the plurality of light-emitting chips, and the light-transmitting packaging material has a side surface parallel to the first arrangement direction and the vertical direction. 如請求項1所述之發光按鍵結構,其中該複數個發光晶粒中該相鄰三個發光晶粒鄰近該發光晶粒封裝體的一側表面排列。 The light-emitting key structure as described in claim 1, wherein the three adjacent light-emitting chips among the plurality of light-emitting chips are arranged adjacent to a side surface of the light-emitting chip package. 如請求項1所述之發光按鍵結構,其中該發光晶粒封裝體包含一載體,該載體具有側牆以形成一容置空間,該複數個發光晶粒容置於該容置空間內。 The light-emitting key structure as described in claim 1, wherein the light-emitting chip package includes a carrier having side walls to form a receiving space, and the plurality of light-emitting chips are received in the receiving space. 如請求項1所述之發光按鍵結構,其中該複數個發光晶粒呈一矩形環狀排列,沿該矩形環狀的任兩個相鄰的發光晶粒發射不同色光。 The light-emitting key structure as described in claim 1, wherein the plurality of light-emitting crystals are arranged in a rectangular ring, and any two adjacent light-emitting crystals along the rectangular ring emit light of different colors. 如請求項1所述之發光按鍵結構,更包含可透光的一開關電路板,設置於該發光晶粒封裝體上方,其中該開關電路板包含一透光載板結構及承載於該透光載板結構上之電路,該電路與該發光晶粒封裝體於該垂直方向上不重疊。 The light-emitting key structure as described in claim 1 further includes a light-transmissive switch circuit board disposed above the light-emitting chip package, wherein the switch circuit board includes a light-transmissive carrier structure and a circuit carried on the light-transmissive carrier structure, and the circuit and the light-emitting chip package do not overlap in the vertical direction. 如請求項1所述之發光按鍵結構,更包含可透光的一開關電路板,設置於該發光晶粒封裝體上方,其中該開關電路板包含一開關接點,該開關 接點具有一平邊,該複數個發光晶粒中該相鄰三個發光晶粒鄰近該平邊平行排列。 The light-emitting key structure as described in claim 1 further includes a light-transmissive switch circuit board disposed above the light-emitting chip package, wherein the switch circuit board includes a switch contact, the switch contact has a flat edge, and the three adjacent light-emitting chips among the plurality of light-emitting chips are arranged in parallel adjacent to the flat edge. 如請求項1所述之發光按鍵結構,更包含彼此樞接的一第一支架及一第二支架,其中該複數個發光晶粒中該相鄰三個發光晶粒不與該第一支架及該第二支架的間隙投影重疊。 The light-emitting key structure as described in claim 1 further includes a first bracket and a second bracket pivotally connected to each other, wherein the three adjacent light-emitting chips among the plurality of light-emitting chips do not overlap with the gap projections of the first bracket and the second bracket. 如請求項1所述之發光按鍵結構,更包含可透光的一開關電路板,該開關電路板與該底板彼此疊置,該開關電路板設置於該發光晶粒封裝體上方,該底板具有一通孔,該開關電路板包含一開關接點,該開關接點及該發光晶粒封裝體於該底板上之垂直投影均落於該通孔內。 The light-emitting key structure as described in claim 1 further includes a light-transmissive switch circuit board, the switch circuit board and the base plate are stacked on each other, the switch circuit board is arranged above the light-emitting chip package, the base plate has a through hole, the switch circuit board includes a switch contact, and the vertical projections of the switch contact and the light-emitting chip package on the base plate both fall within the through hole. 如請求項9所述之發光按鍵結構,其中該通孔包含一主孔部及自該主孔部之一側延伸之一延伸部,該開關接點於該底板上之垂直投影落於該主孔部內,該發光晶粒封裝體於該底板上之垂直投影落於該延伸部內。 The light-emitting key structure as described in claim 9, wherein the through hole includes a main hole portion and an extension portion extending from one side of the main hole portion, the vertical projection of the switch contact on the bottom plate falls within the main hole portion, and the vertical projection of the light-emitting chip package on the bottom plate falls within the extension portion. 如請求項1所述之發光按鍵結構,更包含可透光的一開關電路板與該底板疊置,該開關電路板設置於該發光晶粒封裝體上方,該底板具有一通孔,該開關電路板包含一開關接點,該發光晶粒封裝體於該底板上之垂直投影落於該通孔內,該開關接點於該底板上之垂直投影落於該通孔外。 The light-emitting key structure as described in claim 1 further includes a light-transmissive switch circuit board stacked on the base plate, the switch circuit board is arranged above the light-emitting chip package, the base plate has a through hole, the switch circuit board includes a switch contact, the vertical projection of the light-emitting chip package on the base plate falls within the through hole, and the vertical projection of the switch contact on the base plate falls outside the through hole. 如請求項1所述之發光按鍵結構,更包含可透光的一開關電路板,該開關電路板與該底板疊置,該開關電路板設置於該發光晶粒封裝體上方,其中該開關電路板包含一導線段,呈直線延伸,該複數個發光晶粒中該相鄰三個發光晶粒鄰近該導線段平行排列。 The light-emitting key structure as described in claim 1 further includes a light-transmissive switch circuit board, which is stacked with the base plate and is disposed above the light-emitting chip package, wherein the switch circuit board includes a wire segment extending in a straight line, and the three adjacent light-emitting chips among the plurality of light-emitting chips are arranged in parallel adjacent to the wire segment. 如請求項1所述之發光按鍵結構,其中該鍵帽具有一可透光指示區域,該可透光指示區域具有一長度方向,該可透光指示區域包含複數個可透光字符,沿該長度方向排列,該可透光指示區域與該發光晶粒封裝體於該垂直方向上至少局部地重疊。 The luminous key structure as described in claim 1, wherein the key cap has a light-transmitting indication area, the light-transmitting indication area has a length direction, the light-transmitting indication area includes a plurality of light-transmitting characters arranged along the length direction, and the light-transmitting indication area and the light-emitting chip package at least partially overlap in the vertical direction. 如請求項1所述之發光按鍵結構,其中該鍵帽具有一可透光指示區域,該可透光指示區域具有一長度方向,該複數個發光晶粒的其中該相鄰三個發光晶粒的晶粒邊緣垂直於該長度方向。 The luminous key structure as described in claim 1, wherein the key cap has a light-transmissive indication area, the light-transmissive indication area has a length direction, and the grain edges of the three adjacent luminous grains among the plurality of luminous grains are perpendicular to the length direction. 如請求項1所述之發光按鍵結構,更包含一導光片,設置於該底板下方,其中該導光片具有一容置槽,該發光晶粒封裝體位於該容置槽內,該發光晶粒封裝體發射的光線自該容置槽的內壁面進入該導光片。 The light-emitting key structure as described in claim 1 further includes a light guide plate disposed below the base plate, wherein the light guide plate has a receiving groove, the light-emitting chip package is located in the receiving groove, and the light emitted by the light-emitting chip package enters the light guide plate from the inner wall surface of the receiving groove. 如請求項1所述之發光按鍵結構,更包含一遮罩層,設置於該發光晶粒封裝體的正上方並遮蓋該發光晶粒封裝體。 The light-emitting key structure as described in claim 1 further includes a mask layer, which is disposed directly above the light-emitting chip package and covers the light-emitting chip package. 如請求項1所述之發光按鍵結構,更包含一遮罩層,遮蓋該發光晶粒封裝體,其中該遮罩層具有至少一透光區,設置於該發光晶粒封裝體於該遮罩層上投影的周圍。 The light-emitting key structure as described in claim 1 further includes a mask layer covering the light-emitting chip package, wherein the mask layer has at least one light-transmitting area arranged around the projection of the light-emitting chip package on the mask layer. 如請求項17所述之發光按鍵結構,其中該底板具有一通孔,該透光區於該底板上之垂直投影落於該通孔內。 The luminous key structure as described in claim 17, wherein the base plate has a through hole, and the vertical projection of the light-transmitting area on the base plate falls within the through hole. 如請求項17所述之發光按鍵結構,其中該底板具有一通孔,該遮罩層的一不透光區於該底板上之垂直投影至少局部地落於該通孔內。 The luminous key structure as described in claim 17, wherein the base plate has a through hole, and a vertical projection of an opaque area of the mask layer on the base plate at least partially falls within the through hole. 如請求項1所述之發光按鍵結構,其中該底板具有一通孔,該通孔具有一平直孔緣,該複數個發光晶粒的至少其中兩個相鄰發光晶粒平行該平直孔緣,且該複數個發光晶粒的該相鄰三個發光晶粒垂直於該平直孔緣排列。 The light-emitting key structure as described in claim 1, wherein the bottom plate has a through hole, the through hole has a straight hole edge, at least two adjacent light-emitting crystals of the plurality of light-emitting crystals are parallel to the straight hole edge, and the three adjacent light-emitting crystals of the plurality of light-emitting crystals are arranged perpendicular to the straight hole edge.
TW113202047U 2022-05-10 2022-12-21 Illuminated keyswitch structure TWM658640U (en)

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US202263339978P 2022-05-10 2022-05-10
US63/339,978 2022-05-10

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TW113202021U TWM658638U (en) 2022-05-10 2022-12-21 Illuminated keyswitch structure
TW111149169A TW202345186A (en) 2021-05-27 2022-12-21 Illuminated keyswitch structure
TW112113660A TW202345187A (en) 2022-05-10 2022-12-21 Illuminated keyswitch structure
TW113202047U TWM658640U (en) 2022-05-10 2022-12-21 Illuminated keyswitch structure

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TW111149169A TW202345186A (en) 2021-05-27 2022-12-21 Illuminated keyswitch structure
TW112113660A TW202345187A (en) 2022-05-10 2022-12-21 Illuminated keyswitch structure

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TW202345187A (en) 2023-11-16
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TW202345186A (en) 2023-11-16
CN117038369A (en) 2023-11-10

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