TWI873725B - Substrate treating apparatus - Google Patents

Abstract

Disclosed is a substrate treating apparatus that performs treatment on a substrate. The apparatus includes a batch-type processing unit configured to perform treatment on a plurality of substrates, a single-wafer-type processing unit configured to perform treatment on one substrate of the substrates, a posture turning unit configured to turn a posture of the substrates, on which the treatment is performed by the batch-type processing unit, while the substrates get wet with deionized water, a first transport unit configured to transport the substrates, on which the treatment is performed by the batch-type processing unit, to the posture turning unit, a second transport unit configured to transport the substrates, turned to horizontal by the posture turning unit, with a hand to the single-wafer-type processing unit, and configured to transport the substrates, on which the treatment is performed by the single-wafer processing unit, with the hand, and a cleaning and drying unit configured to perform cleaning and drying treatment on the hand.

Description

Substrate processing equipment

The present invention relates to a substrate processing device for performing designated processing on substrates such as semiconductor substrates, FPD (Flat Panel Display) substrates for liquid crystal display or organic EL (Electroluminescence) display devices, glass substrates for masks, and substrates for optical disks.

Previously, such devices included batch modules, single-chip modules, rotating mechanisms, and conveying robots (see, for example, Patent Document 1). The batch module processes multiple substrates at once. The single-chip module processes each substrate. Generally speaking, the drying process of the single-chip module affects a smaller space of the processing atmosphere than the drying process of the batch module, and the particle performance is higher. Therefore, it is easier to improve the drying performance of the single-chip module than the batch module. Therefore, for example, after the etching process and the cleaning process are performed by the batch module, the drying process is performed by the single-chip module.

In the batch module, multiple substrates are processed in a vertical position. On the other hand, in the single-chip module, the substrates are processed in a horizontal position. Therefore, the substrates in a vertical position after the batch module is processed are converted to a horizontal position by a rotating mechanism before being transported to the single-chip module. The substrates set to a horizontal position by the rotating mechanism are transported to the single-chip module by a transport robot. The substrates dried by the single-chip module are transported again by the same transport robot for transport out.

However, in recent years, in the semiconductor field, the pattern of 3D structure has been gradually refined. Therefore, in such a substrate, due to the influence of the air-liquid interface when the substrate is dried, there is a risk of pattern collapse. Therefore, after the batch module processing, before the single-chip module processing, the substrate is set to a wet state in a way that the substrate is not dried.

Specifically, a plurality of blowing pipes are arranged beside the rotating mechanism. The blowing pipes blow pure water toward the substrate held in the rotating mechanism. Thus, the substrate held in the rotating mechanism is set to a wet state before being placed on the single-chip module.

However, in the case of previous examples with this structure, there are the following problems.

That is, in the previous device, when the transport robot receives the substrate that is set to a horizontal position by the rotating mechanism with its hands, the hands are wetted by pure water. Therefore, when the transport robot transports the substrate that has been dried by the single-chip module, there is a risk that the dried substrate will be contaminated by the hands.

The present invention was completed in view of this situation, and its purpose is to provide a substrate processing device that can prevent contamination when transporting dry substrates even when transporting wet substrates.

In order to achieve this purpose, the present invention adopts the following structure.

The present invention is a substrate processing device for processing substrates; and the above-mentioned device includes the following elements: a batch processing section, which uniformly processes a plurality of substrates in a state of a vertical posture; a single-wafer processing section, which processes a single substrate in a state of a horizontal posture; a posture conversion section, which holds the plurality of substrates processed by the above-mentioned batch processing section, and converts the plurality of substrates from a vertical posture to a water posture when wetted with pure water. horizontal posture; the first conveying section, which conveys the plurality of substrates processed by the batch processing section to the posture conversion section; the second conveying section, which supports the substrates set to a horizontal posture by the posture conversion section on the hand and conveys them to the single-wafer processing section, and supports the substrates processed by the single-wafer processing section on the hand and conveys them from the single-wafer processing section; and the cleaning and drying section, which cleans and dries the hand of the second conveying section.

According to the present invention, the second conveyor cleans and dries the hands in the cleaning and drying section. Therefore, the second conveyor can clean the hands. Therefore, although the second conveyor conveys the wet substrate from the posture conversion section, it can prevent contamination when conveying the dry substrate from the single-wafer processing section.

Furthermore, as in the present invention, it is preferred that the cleaning and drying section cleans and dries the hands before the second conveying section conveys the substrate processed by the single-wafer processing section from the single-wafer processing section.

The hands do not need to be cleaned and dried every time they get wet when transferring substrates from the posture conversion unit to the single-wafer processing unit. Therefore, the frequency of cleaning and drying can be reduced. As a result, the resources required for cleaning and drying can be saved.

Furthermore, the present invention is preferably such that the cleaning and drying section cleans and dries the hand after transferring the substrate from the posture conversion section to the single-wafer processing section.

After the hands are wetted by transporting substrates to the single-wafer processing unit, they are cleaned and dried. Therefore, the time from the hands being wetted to the hands being cleaned and dried can be shortened. Therefore, by allowing a long time to pass after the hands are wetted, residues caused by pure water adhering to the hands can be prevented. As a result, the cleanliness of the hands can be improved.

Furthermore, the present invention is preferably such that the cleaning and drying section is arranged above the posture conversion section.

Since the washing and drying part is arranged above the posture conversion part, the area occupied by the device can be reduced.

Furthermore, as in the present invention, it is preferred that the spaces between the cleaning and drying section and the posture conversion section are connected in the vertical direction.

When cleaning and drying in the cleaning and drying section, the cleaning liquid flows downward. The plurality of substrates are set to be wetted with pure water with the position changeover portion at the bottom. Therefore, the bottom plate for receiving the cleaning liquid of the cleaning and drying section can be omitted. As a result, the structure can be simplified and the cost can be suppressed.

Furthermore, as in the present invention, it is preferred that the cleaning and drying section is equipped with: a cleaning liquid nozzle that sprays cleaning liquid toward the above-mentioned hand; and a drying mechanism that dries the above-mentioned hand.

Hands can be washed and dried by the detergent nozzle and drying mechanism.

Furthermore, as in the present invention, it is preferred that the drying mechanism is a gas nozzle that supplies gas to the hand.

It can effectively dry hands in a simple way.

Furthermore, as in the present invention, it is preferred that the above-mentioned single-chip processing section has: a spin chuck that rotatably supports the substrate in a horizontal position; a processing liquid supply mechanism that supplies processing liquid to the substrate supported by the above-mentioned spin chuck; and a gas supply mechanism that supplies gas to the substrate supported by the above-mentioned spin chuck; and the above-mentioned cleaning and drying section is realized by using the above-mentioned processing liquid supply mechanism and the above-mentioned gas supply mechanism of the above-mentioned single-chip processing section to clean and dry the above-mentioned hand.

The single-chip processing unit can also serve as the cleaning and drying unit. Therefore, the structure can be simplified and the device cost can be suppressed.

Furthermore, as in the present invention, it is preferred to have a plurality of the above-mentioned cleaning and drying sections, and to arrange the above-mentioned plurality of cleaning and drying sections at different positions when viewed from above; and according to the position of the above-mentioned second conveying section, the cleaning and drying section that is closer is used for cleaning and drying.

Since the hands are cleaned and dried by the cleaning and drying section at a closer location, the hands can be cleaned quickly. Therefore, it is not easy to produce residues caused by the attached pure water. In addition, since the substrates from the single-wafer processing section can be transported quickly, the processing volume can be increased.

1,1A: Substrate processing equipment

3: Move in and out of the area

5: Storage area

7: Transfer block

9: Processing block

11: Investment Department

13: Extraction section

15: Loading platform

17: Loading platform

19: Transport mechanism

21: Shelves

23: Hands

25: Underwater posture transition section

27: Processing tank

29: Hands

31: Buffer

33: Rotation processing unit

35: Spraying nozzle

37: Supercritical fluid chamber

39: Loading Shelves

41: Posture conversion unit

43: Dipping tank

43a: Spray pipe

44:Through hole

45:Thruster

47: Carrier in slot

49: Rotating mechanism

51: Open mouth

53: Open mouth

55: Fastening part

57: Cylinder

57a: Actuating shaft

57b: snap-fitting piece

59: Motor

63: Back panel

65: Support Department

67: Lifting mechanism

69: Motor

71:Threaded shaft

73: Linear guide

75: Lifting plate

77: Connecting structure

79:Through hole

81: Lifting components

83: Lifting mechanism

85: Motor

87:Threaded shaft

89: Linear guide

91: Lifting plate

101:Support framework

101a: Top plate

101b: Lateral face

103: Detergent nozzle

105: Gas nozzle

107: Heater

109:Power supply for heater

ACB: Transport and Storage Department

BPU1: Batch Processing Unit 1

BPU2: Batch Processing Unit 2

BPU3: Batch Processing Unit 3

C: Carrier

CDU: Washing and drying department

CDU1: 1st washing and drying unit

CDU2: Second cleaning and drying unit

CHB1: Chemical solution processing department

CHB2: Chemical solution processing department

CR: Center Robot

CTC: Transfer mechanism

CU: Control Unit

HP1: 1st horizontal position

HP2: 2nd horizontal position

HTR: First transport mechanism

LF1, LF2, LF3, LF4: elevator

ONB: Pure Water Treatment Department

P1: 1st height position

P2: 2nd height position

P3: 3rd height position

P4: 4th height position

R1: Row 1

R2: Row 2

R3: Row 3

SWP1: Single chip processing unit 1

SWP2: Single chip processing unit 2

SWP3: Single chip processing unit 3

VP1: 1st height position

VP2: 2nd height position

W: Substrate

WTR: Second transport mechanism

X: front and back direction

Y: width direction

Z: Lead vertical direction

In order to illustrate the present invention, several currently preferred forms are shown in the attached figures, but it should be understood that the present invention is not limited to the precise configuration and device shown.

FIG1 is a top view of a substrate processing device of an embodiment.

Figure 2 is a block diagram showing the control system.

Figure 3 is a side view of the underwater posture conversion section and the washing and drying section.

Figure 4 is a top view of the underwater posture conversion unit.

Figure 5 is a side view of the underwater posture conversion unit.

Figure 6 is a front view of the underwater posture conversion unit.

Figure 7 is a diagram illustrating the movements of the underwater posture transition section.

Figure 8 is a diagram illustrating the movements of the underwater posture transition section.

Figure 9 is a diagram illustrating the movements of the underwater posture transition section.

Figure 10 is a diagram illustrating the movements of the underwater posture transition section.

Figure 11 is a diagram illustrating the movements of the underwater posture transition section.

Figure 12 is a diagram illustrating the movements of the underwater posture transition section.

Figure 13 is a diagram illustrating the movements of the underwater posture transition section.

Figure 14 is a diagram illustrating the movements of the underwater posture transition section.

Figure 15 is a diagram illustrating the operation of washing and drying the parts.

Figure 16 is a diagram illustrating the operation of washing and drying the parts.

Figure 17 is a diagram illustrating the operation of washing and drying the parts.

Figure 18 is a diagram illustrating the operation of washing and drying the parts.

Figure 19 is a side view showing a variation of the drying mechanism.

FIG. 20 is a top view showing a variation of the substrate processing device.

Below, the embodiments of the present invention are described with reference to the drawings.

FIG1 is a top view of a substrate processing device of an embodiment.

<1. Overall composition>

The substrate processing device 1 has a loading and unloading block 3, a material storage block 5, a transfer block 7 and a processing block 9.

The substrate processing device 1 processes the substrate W. The substrate processing device 1 performs, for example, liquid treatment, cleaning treatment, and drying treatment on the substrate W. The substrate processing device 1 adopts a processing method that combines batch and single-chip processing (the so-called hybrid method). The batch method processes a plurality of substrates W in a vertical position. The single-chip method processes a single substrate W in a horizontal position.

In this manual, for convenience, the direction in which the loading and unloading block 3, the storage block 5, the transfer block 7, and the processing block 9 are arranged is called the "front-rear direction X". The front-rear direction X is horizontal. In the front-rear direction X, the direction from the storage block 5 toward the loading and unloading block 3 is called the "front". The direction opposite to the front is called the "rear". The horizontal direction orthogonal to the front-rear direction X is called the "width direction Y". One direction of the "width direction Y" is appropriately called the "right". The direction opposite to the right is called the "left". The direction perpendicular to the horizontal direction is called the "vertical direction Z". In each figure, for reference, the front, back, right, left, top, and bottom are appropriately displayed.

<2. Move in and out of the area>

The loading and unloading block 3 is equipped with an input part 11 and an extraction part 13. The input part 11 and the extraction part 13 are arranged in the width direction Y. The substrate W is stored in a carrier C in a plurality of layers in a horizontal posture with constant intervals (for example, 25 pieces). The carrier C storing the unprocessed substrate W is placed on the input part 11. The input part 11 is equipped with two loading tables 15 for loading the carrier C, for example. The carrier C is formed with a plurality of grooves (omitted from the figure) that separate the surfaces of the substrate W from each other and accommodate the substrate W piece by piece. As a carrier C, there is, for example, a FOUP (Front Opening Unify Pod: front-opening wafer transfer box). FOUP is a closed container. The carrier C can also be an open container, regardless of the type.

The extraction unit 13 is provided on the opposite side of the input unit 11 across the center of the width direction Y in the substrate processing device 1. The extraction unit 13 is arranged on the left side Y of the input unit 11. The extraction unit 13 stores the processed substrate W in the carrier C and extracts it together with the carrier C. The extraction unit 13 that functions in this way is the same as the input unit 11, for example, it has two loading tables 17 for loading the carrier C. The input unit 11 and the extraction unit 13 are also called loading ports.

<3. Storage area>

The storage block 5 is arranged adjacent to the rear X of the loading and unloading block 3. The storage block 5 is provided with a conveying and storage section ACB. The conveying and storage section ACB is provided with a conveying mechanism 19 and a shelf 21.

The transport mechanism 19 transports the carrier C. The transport storage section ACB is equipped with a plurality of shelves 21. On the shelves 21, there are shelves for simply temporarily placing the carrier C and shelves for placing the carrier C for transfer with the first transport mechanism HTR. The transport storage section ACB takes the carrier C containing the unprocessed substrate W from the input section 11 and places it on the shelf 21. The transport storage section ACB transports the carrier C to the transfer shelf 21 and places it according to the schedule of the prescribed processing sequence. The transport storage section ACB transports the empty carrier C placed on the transfer shelf 21 to the shelf 21 and places it. The transport and storage unit ACB transports the carrier C containing the processed substrate W placed on the shelf 21 for transfer by the first transport mechanism HTR to the shelf 21 and places it thereon. The transport and storage unit ACB carries out the carrier C containing the processed substrate W placed on the shelf 21 to the extraction unit 13.

<4. Transfer block>

The transfer block 7 is arranged adjacent to the rear X of the storage block 5. The transfer block 7 has a first transport mechanism HTR, a transfer mechanism CTC and a second transport mechanism WTR.

The first transport mechanism HTR is arranged at the right Y in X behind the transport and storage section ACB. The first transport mechanism HTR transports a plurality of substrates W at a time. In other words, the first transport mechanism HTR has a plurality of hands (not shown in the figure). One hand supports one substrate W. The first transport mechanism HTR may also transport only one substrate W. The first transport mechanism HTR takes out a plurality of substrates W (for example, 25 substrates) at a time from the carrier C placed on the shelf 21 for transfer of the transport and storage section ACB, and transports them to the transfer mechanism CTC. At this time, the first transport mechanism HTR changes the posture of the substrate W from a horizontal posture to a vertical posture. The first transport mechanism HTR receives a plurality of processed substrates W at a time from the processing block 9 described later. The first transport mechanism HTR uniformly transports the processed plurality of substrates W to the carrier C placed on the transfer shelf 21 of the transport storage unit ACB.

A transfer mechanism CTC is arranged on the left side Y of the first transport mechanism HTR. The transfer mechanism CTC transfers a plurality of substrates W between the first transport mechanism HTR and the second transport mechanism WTR. The transfer mechanism CTC transports a plurality of substrates W in the width direction Y between the first transport mechanism HTR and the second transport mechanism WTR. After receiving the plurality of substrates W from the first transport mechanism HTR, the transfer mechanism CTC moves toward the second transport mechanism WTR in the width direction Y. At this time, the transfer mechanism CTC performs batch assembly or batch release. The transfer mechanism CTC, for example, combines a plurality of substrates W constituting a batch taken out from a certain carrier C with a plurality of substrates W constituting another batch taken out from other carriers C into one batch. This is batch assembly. The opposite action becomes batch release. That is, the plurality of substrates W constituting one batch of a batch and the plurality of substrates W constituting other batches of the same batch are separated and returned to the original batch. Usually, the spacing of the plurality of substrates W taken out from the carrier C is the same spacing as the carrier C. This is called the full pitch. In a batch, for example, the spacing of the plurality of substrates W becomes half of the full pitch. This is called the half pitch. In addition, since the present invention does not consider the pitch, the detailed description of the pitch is omitted in the following description for easy understanding of the invention.

In addition, in the following description, the composition of the batch of the processing object is not considered. That is, since it is the same regardless of the normal batch or the batch, in the following description, the processing object will be simply referred to as a batch or a plurality of substrates W.

The second transport mechanism WTR is arranged on the left side Y of the transfer mechanism CTC. The second transport mechanism WTR is configured to be movable across the transfer block 7 and the processing block 9. The second transport mechanism WTR is configured to be movable in the front-rear direction X. The second transport mechanism WTR has a pair of hands 23 for transporting the batch. The pair of hands 23, for example, has a rotation axis facing the width direction Y. The pair of hands 23 swings around the rotation axis. The pair of hands 23 clamps both end surfaces of the plurality of substrates W constituting the batch. The second transport mechanism WTR delivers the plurality of substrates W between the transfer mechanism CTC. The second transport mechanism WTR delivers the plurality of unprocessed substrates W to the processing block 9.

In addition, the above-mentioned second transport mechanism WTR is equivalent to the "first transport unit" of the present invention.

<5. Processing block>

The processing block 9 processes the substrate W. In addition to the second transport mechanism WTR, the processing block 9 is divided into the first row R1, the second row R2 and the third row R3 in the width direction Y. Specifically, the first row R1 is arranged on the left Y. The second row R2 is arranged in the center of the width direction Y. In other words, the second row R2 is arranged on the right Y of the first row R1. The third row R3 is arranged on the right Y of the second row R2.

<5-1. Line 1>

The first row R1 mainly includes a batch processing unit. Specifically, the first row R1 includes a first batch processing unit BPU1, a second batch processing unit BPU2, a third batch processing unit BPU3, an underwater posture conversion unit 25, and a cleaning and drying unit CDU. The first batch processing unit BPU1 is adjacent to the rear X of the transfer block 7. The second batch processing unit BPU2 is adjacent to the rear X of the first batch processing unit BPU1. The third batch processing unit BPU3 is adjacent to the rear X of the second batch processing unit BPU2. The underwater posture conversion unit 25 is adjacent to the rear X of the third batch processing unit BPU3. The cleaning and drying unit CDU is arranged above the underwater posture conversion unit 25. The cleaning and drying unit CDU is arranged close to the 2nd row R2 in the width direction Y.

In addition, the first batch processing unit BPU1, the second batch processing unit BPU2 and the third batch processing unit BPU3 are equivalent to the "batch processing unit" of the present invention.

The first batch processing unit BPU1 is, for example, a chemical liquid processing unit CHB1. The chemical liquid processing unit CHB1 performs, for example, phosphoric acid treatment. The phosphoric acid treatment uses phosphoric acid as a processing liquid. The phosphoric acid treatment performs an etching treatment on a plurality of substrates W. The etching treatment, for example, performs chemical cutting on the film thickness of a film attached to the substrate W. The film is, for example, a nitride film.

The liquid treatment unit CHB1 has a treatment tank 27 and an elevator LF1. The treatment tank 27 stores the treatment liquid. The treatment tank 27 supplies the treatment liquid, for example, from the bottom to the top. The elevator LF1 rises and falls in the vertical direction Z. Specifically, the elevator LF1 rises and falls across the treatment position inside the treatment tank 27 and the handover position above the treatment tank 27. The elevator LF1 keeps the plurality of substrates W in a vertical position. At the handover position, the elevator LF1 hands over the plurality of substrates W between the second transport mechanism WTR.

The second batch processing unit BPU2 is, for example, a liquid chemical processing unit CHB2. The liquid chemical processing unit CHB2 has the same structure as the liquid chemical processing unit CHB1. That is, the liquid chemical processing unit CHB2 has a processing tank 27 and a lift LF2. The liquid chemical processing unit CHB2 performs the same processing as the liquid chemical processing unit CHB1. That is, there are multiple processing units that perform the same liquid chemical processing. The reason is that phosphoric acid treatment takes a longer time than other liquid chemical treatments or pure water washing treatments. Phosphoric acid treatment takes about 60 minutes, for example. Therefore, by performing processing in parallel with multiple processing units, the processing volume can be increased.

The third batch processing unit BPU3 is, for example, a pure water processing unit ONB. The pure water processing unit ONB has a similar structure to the chemical solution processing units CHB1 and CHB2. Specifically, it has a processing tank 27 and an elevator LF3. However, the processing tank 27 mainly supplies pure water for pure water cleaning. The processing tank 27 of the pure water processing unit ONB cleans the chemical solution attached to the plurality of substrates W. In other words, the processing tank 27 of the pure water processing unit ONB rinses the chemical solution attached to the plurality of substrates W. For example, when the specific resistance of the pure water in the processing tank 27 rises to a specified value, the pure water processing unit ONB ends the cleaning process.

<5-2. Line 2>

The second row R2 is equipped with a center robot CR. The center robot CR is equipped with a hand 29. The hand 29 holds a substrate W. The center robot CR may also be equipped with another hand 29 in the vertical direction Z, for example. The center robot CR is configured to be movable in the front-back direction X. The center robot CR is configured to be raised and lowered in the vertical direction Z. The center robot CR is configured to be rotatable in a horizontal plane including the front-back direction X and the width direction Y. The hand 29 is configured to be able to move forward and backward in a horizontal plane including the front-back direction X and the width direction Y. The hand 29 receives substrates W one by one from the underwater posture conversion unit 25. The center robot CR transfers substrates W one by one relative to the third row R3. The center robot CR receives substrates W one by one from the third row R3. In addition, when the center robot CR has two hands 29, it receives two substrates W from the underwater posture conversion unit 25 and delivers the substrates W one by one to two locations between the third row R3.

The above-mentioned central robot CR is equivalent to the "second transport unit" of the present invention.

<5-3. Line 3>

The third row R3 mainly has a single-chip processing unit. Specifically, the third row R3 has a first single-chip processing unit SWP1, a second single-chip processing unit SWP2, a third single-chip processing unit SWP3 and a buffer unit 31. The first single-chip processing unit SWP1 is arranged at the innermost side in the front-rear direction X. In other words, the first single-chip processing unit SWP1 is arranged on the opposite side of the underwater posture conversion unit 25 across the second row R2 in the width direction Y. The second single-chip processing unit SWP2 is adjacent to the front X of the first single-chip processing unit SWP1. The third single-chip processing unit SWP3 is adjacent to the front X of the second single-chip processing unit SWP2. The buffer section 31 is adjacent to the front X of the third single-wafer processing section SWP3, and adjacent to the rear X of the first transport mechanism HTR.

In addition, the first single-chip processing unit SWP1, the second single-chip processing unit SWP2, and the third single-chip processing unit SWP3 are equivalent to the "single-chip processing unit" of the present invention.

The first single-wafer processing unit SWP1 and the second single-wafer processing unit SWP2, for example, include a rotation processing unit 33 and a nozzle 35. The rotation processing unit 33 rotationally drives the substrate W in a horizontal plane. The nozzle 35 supplies a processing liquid and a gas to the substrate W. The nozzle 35 does not supply the processing liquid and the gas at the same time. The nozzle 35 can supply only the processing liquid, or only the gas. The nozzle 35 swings across and away from the standby position of the rotation processing unit 33 and the supply position above the rotation processing unit 33. The processing liquid is, for example, IPA (isopropyl alcohol) or pure water. The gas is, for example, nitrogen ( _N2 gas). The nitrogen gas is preferably dry nitrogen gas. The first single wafer processing unit SWP1 and the second single wafer processing unit SWP2 perform a preliminary drying process using IPA after cleaning the substrate W using pure water, for example.

The above-mentioned rotation processing section 33 is equivalent to the "spin chuck" of the present invention. The above-mentioned nozzle 35 is equivalent to the "processing liquid supply mechanism" and "gas supply mechanism" of the present invention.

The third single-wafer processing unit SWP3, for example, has a supercritical fluid chamber 37. The supercritical fluid chamber 37, for example, uses a supercritical fluid for drying. The fluid used at this time is, for example, carbon dioxide. The supercritical fluid chamber 37 sets the processing liquid to a supercritical state to process the substrate W. The supercritical state is obtained by setting the fluid to the critical temperature and critical pressure inherent to the fluid. Specifically, when the fluid is carbon dioxide, the critical temperature = 31°C and the critical pressure is 7.38MPa. In the supercritical state, the surface tension of the fluid is zero. Therefore, the gas-liquid interface does not affect the pattern of the substrate W. Therefore, it is not easy to cause the pattern in the substrate W to collapse.

The buffer section 31, for example, has a plurality of stages of loading shelves 39. The plurality of loading shelves 39 are preferably arranged in a stacked manner in the lead vertical direction Z. The plurality of loading shelves 39 can carry at least one batch of substrates W. Since the first transport mechanism HTR can take out a plurality of substrates W at once, the burden on the first transport mechanism HTR can be reduced compared to the case of taking out substrates W one by one. The buffer section 31 can be received from a plurality of different directions in the horizontal direction. The central robot CR receives the buffer section 31 in order to load the substrate W from the second row R2 side toward the right Y. The first transport mechanism HTR receives the buffer section 31 in order to receive one batch of substrates W from the front X toward the rear X. The first transport mechanism HTR can also receive substrates W that do not reach the number of pieces in one batch. The central robot CR can be raised and lowered in the vertical direction Z in a manner that allows the substrates W to be transferred between a plurality of loading shelves 39.

The first single chip processing unit SWP1, the second single chip processing unit SWP2 and the third single chip processing unit SWP3 preferably have the same processing units in multiple layers in the vertical direction Z. This can increase the processing capacity.

<6. Control system>

Here, refer to Figure 2. Figure 2 is a block diagram showing the control system.

The above-mentioned components are controlled by the control unit CU. The control unit CU has a CPU (Central Processing Unit) or a memory. The control unit CU is electrically connected to the above-mentioned components by signal lines. The control unit CU operates each component through a program pre-stored in the memory to process the substrate W.

<7. Underwater posture transition section>

Here, the underwater posture conversion unit is described with reference to Figures 3 to 6. Figure 3 is a side view of the underwater posture conversion unit and the washing and drying unit. Figure 4 is a top view of the underwater posture conversion unit. Figure 5 is a side view of the underwater posture conversion unit. Figure 6 is a front view of the underwater posture conversion unit.

The underwater posture conversion unit 25 includes a posture conversion unit 41, an immersion tank 43, a lift LF4, and a thruster 45. The posture conversion unit 41 includes a tank carrier 47 and a rotating mechanism 49.

The in-slot carrier 47 stores a plurality of substrates W in a vertical position in a horizontally long state. The in-slot carrier 47 stores a plurality of substrates W separated by a specified interval in a specified arrangement direction. The surface of the substrate W is in a direction perpendicular to the arrangement direction. The arrangement direction in this example is the width direction Y. The in-slot carrier 47 forms an opening 51 at the bottom. The in-slot carrier 47 forms an opening 53 on the upper surface. The length of the opening 53 in the front-to-back direction X is longer than the diameter of the substrate W. The opening area of the opening 51 is narrower than the opening 53. The in-slot carrier 47 has a snap-fitting portion 55. The snap-fitting portion 55 is formed on two outer side surfaces of the in-slot carrier 47 in the front-to-back direction X. The snap-fitting portion 55 is formed on the outer side surface in a direction perpendicular to the arrangement direction of the plurality of substrates W.

The immersion tank 43 accommodates the carrier 47 in the tank. The immersion tank 43 has a size that can accommodate the carrier 47 in the tank below the liquid surface regardless of whether the carrier 47 in the tank is in a longitudinal state (the substrate W is in a horizontal position) or a transverse state (the substrate W is in a vertical position). The immersion tank 43 has ejection pipes 43a at both ends of the bottom surface in the front-back direction X. Each ejection pipe 43a is cylindrical. Each ejection pipe 43a has a long axis in the width direction Y. Each ejection pipe 43a is longer in the width direction Y. Each ejection pipe 43a supplies pure water toward the central part of the immersion tank 43 in the front-back direction X. Each ejection pipe 43a forms an upward flow of pure water from the bottom of the immersion tank 43 toward the top. The pure water supplied from each spray pipe 43a to the immersion tank 43 passes over the upper edge of the immersion tank 43 and is discharged.

The rotating mechanism 49 includes a cylinder 57 and a motor 59. The cylinder 57 includes an actuating shaft 57a and a locking piece 57b. The actuating shaft 57a is driven forward and backward in the front-rear direction X according to the opening and closing of the cylinder 57. The immersion tank 43 forms a through hole 44. The through hole 44 is formed on the side wall of the immersion tank 43 in the front-rear direction X. The actuating shaft 57a is installed in the through hole 44 of the immersion tank 43 in a liquid-tight state. The actuating shaft 57a can move forward and backward in the front-rear direction X in a liquid-tight state. The actuating shaft 57a can rotate around the axis in the front-rear direction X in a liquid-tight state. In other words, the actuating shaft 57a can move forward, backward and rotate relative to the center of the immersion tank 43 while maintaining liquid tightness.

The engaging position where the locking piece 57b of the actuating shaft 57a is engaged with the locking portion 55 is the connecting position. The exit position where the locking piece 57b of the actuating shaft 57a is separated from the locking portion 55 is the opening position. The locking piece 57b of the actuating shaft 57a shown in FIG. 4 is in the opening position.

The snap-fitting piece 57b is snap-fitted with the snap-fitting portion 55 of the in-slot carrier 47. The snap-fitting piece 57b forms the shape (contour) of the outer circumferential surface by snapping with the snap-fitting portion 55. The snap-fitting portion 55 and the snap-fitting piece 57b are, for example, polygonal shapes when viewed from the front-rear direction X. The size of the longitudinal cross-sectional shape of the snap-fitting piece 57b is slightly smaller than that of the snap-fitting portion 55. The shape of the inner circumferential surface of the snap-fitting portion 55 is similar to the shape of the outer circumferential surface of the snap-fitting piece 57b. When the snap-fitting piece 57b is snap-fitted with the snap-fitting portion 55, the in-slot carrier 47 is integrated with the actuating shaft 57a. In other words, when the snap-fitting piece 57b is snap-fitted with the snap-fitting portion 55, the in-slot carrier 47 does not rotate around the axis of the actuating shaft 57a in the front-rear direction X relative to the actuating shaft 57a. The carrier 47 in the slot can rotate around the axis in the front-rear direction X together with the actuating shaft 57a.

For example, when the cylinder 57 is opened, the actuating shaft 57a enters. For example, when the cylinder 57 is closed, the actuating shaft 57a exits. When the cylinder 57 is opened, it moves to a connection position where the snap-fitting piece 57b snaps into the snap-fitting part 55. When the cylinder 57 is closed, it moves to an open position where the snap-fitting piece 57b is separated from the snap-fitting part 55. In the connection position, the actuating shaft 57a is integrated with the carrier 47 in the slot. In the open position, the actuating shaft 57a is separated from the carrier 47 in the slot.

The motor 59 rotates the cylinder 57 around the axis of the front-back direction X. When the cylinder 57 is opened and the motor 59 is driven to rotate in the first direction, the motor 59 rotates the tank carrier 47 around the axis of the front-back direction X. When the cylinder 57 is opened and the motor 59 is driven to rotate in the second direction opposite to the first direction, the motor 59 rotates the tank carrier 47 around the axis of the front-back direction X in the opposite direction. The rotation angles are approximately 90° respectively. The rotation angle at this time is the rotation angle at which the posture of the plurality of substrates W stored in the tank carrier 47 is converted into a horizontal posture and a vertical posture.

The lift LF4 has a back plate 63 and a support 65. The back plate 63 extends along the inner side of the immersion tank 43. The back plate 63 extends downward in the lead straight direction Z on the inner side along the front-rear direction X. For example, two support parts 65 are installed at the lower end of the back plate 63. The two support parts 65 extend in the width direction Y. The interval between the two support parts 65 in the front-rear direction X is wider than the opening 51. The interval between the two support parts 65 in the front-rear direction X is narrower than the width of the carrier 47 in the tank in the front-rear direction X. The lift LF4 supports the carrier 47 in the tank in a horizontal position in the length direction.

The lifting mechanism 67 is arranged near the lift LF4. The lifting mechanism 67 has a motor 69, a threaded shaft 71, a linear guide 73 and a lifting piece 75. The motor 69 is arranged with the rotation axis in a longitudinal position. The threaded shaft 71 is mounted on the rotation axis of the motor 69. The threaded shaft 71 faces the lead direction Z. The linear guide 73 is arranged parallel to the threaded shaft 71. The linear guide 73 faces the lead direction Z. The lifting piece 75 is screwed to the threaded shaft 71. One of the lifting pieces 75 is slidably mounted on the linear guide 73. The other lifting piece 75 is mounted on the connecting structure 77. The connecting structure 77 is in an inverted L shape. The connecting structure 77 is connected to the upper end of the back plate portion 63.

When the motor 69 rotates, the threaded shaft 71 rotates. When the threaded shaft 71 rotates, the lifting plate 75 is lifted and lowered in the vertical direction Z along the linear guide 73 according to the rotation direction of the motor 69. In this way, for example, the lift LF4 is lifted and moved to multiple height positions.

For example, as shown in FIG. 5 , the lift LF4 moves up and down across the first height position P1, the second height position P2, the third height position P3, and the fourth height position P4 by means of the lifting mechanism 67. The first height position P1 is lower than the second to fourth height positions P2 to P4. The second height position P2 is higher than the first height position P1 and the fourth height position P4, and lower than the third height position P3. The third height position P3 is higher than the first height position P1, the second height position P2, and the fourth height position P4. The fourth height position P4 is higher than the first height position P1, and lower than the second height position P2 and the third height position P3.

The first height position P1 is when the support part 65 of the lift LF4 is located near the bottom surface of the immersion tank 43. The first height position P1 is a position where the carrier 47 in the tank is clamped by the rotating mechanism 49 and the support part 65 is separated from the lower surface of the carrier 47 in the tank. The first height position P1 is a position where the carrier 47 in the tank is rotated longitudinally in the immersion tank 43 by the rotating mechanism 49.

The second height position P2 is a position that supports the entire carrier 47 in the tank below the liquid surface of the immersion tank 43. At the second height position P2, the opening 53 of the carrier 47 in the tank is below the liquid surface. The second height position P2 is a position where the carrier 47 in the tank is clamped by the rotating mechanism 49. The second height position P2 is a position where the buckle 55 of the carrier 47 in the tank and the buckle piece 57b of the cylinder 57 are arranged in a straight line in the horizontal direction. In other words, the second height position P2 is a position where the buckle 55 and the buckle piece 57b are opposite to each other in the horizontal direction.

The third height position P3 is the position where the plurality of substrates W are transferred between the second transport mechanism WTR and the in-tank carrier 47. The third height position P3 is, for example, the position where the support portion 65 of the lift LF4 is located above the liquid level of the immersion tank 43. However, as long as the bottom of the in-tank carrier 47 is located above the liquid level, the support portion 65 is not necessarily located above the liquid level.

The fourth height position P4 is to maintain the in-tank carrier 47 with the plurality of substrates W in a horizontal position under the water surface in the immersion tank 43. In other words, the fourth height position P4 maintains the in-tank carrier 47 in a longitudinal state under the water surface. The step position from the fourth height position P4 to the third height position P3 is to only make the substrate W to be transported by the central robot CR at a height position above the liquid surface of the immersion tank 43.

The immersion tank 43 has a through hole 79 formed at the bottom. The lifting member 81 is inserted through the through hole 79. The through hole 79 maintains the immersion tank 43 in a liquid-tight state and inserts the lifting member 81. The lifting member 81 is U-shaped. A pusher 45 is installed on one of the lifting members 81. The pusher 45 can support a plurality of substrates W uniformly. The pusher 45 abuts against the lower edge of the supporting substrate W. As shown in Figures 4 and 6, the size of the pusher 45 is smaller than the opening 51 and the opening 53 of the carrier 47 in the tank. The pusher 45 can be lifted and lowered by passing through the carrier 47 in the tank in the vertical direction Z. The width of the pusher 45 is smaller than the spacing in the front-rear direction X in the support part 65 of the elevator LF4. The thruster 45 does not interfere with the carrier 47 in the tank and the support part 65 of the elevator LF4.

As shown in FIG. 4 and FIG. 6 , the thruster 45 has a lifting mechanism 83 at an adjacent position. The lifting mechanism 83 has a motor 85, a threaded shaft 87, a linear guide 89 and a lifting piece 91. The rotation axis of the motor 85 is arranged longitudinally. The threaded shaft 87 is mounted on the rotation axis of the motor 85. The threaded shaft 87 is arranged in the lead direction Z. The linear guide 89 is arranged in a positional relationship parallel to the threaded shaft 87. The linear guide 89 is arranged in the lead direction Z. The lifting piece 91 is screwed to the threaded shaft 87. One of the lifting pieces 91 is slidably mounted on the linear guide 89. The other lifting piece 91 is connected to the lifting member 81.

When the motor 85 is driven forward or reverse, the threaded shaft 87 rotates in the forward or reverse direction. The lifting plate 91 is lifted and lowered in the vertical direction Z along the linear guide 89 according to the rotation direction of the motor 85. Thereby, the pusher 45 is lifted and lowered in the vertical direction Z. The pusher 45 is lifted and lowered across the standby position and the transfer position. The standby position is below the carrier 47 in the tank and near the bottom of the immersion tank 43. The standby position is shown by a solid line in Figures 5 and 6. The transfer position is above the liquid level of the immersion tank 43. The transfer position is shown by a double-point chain in Figures 5 and 6. The transfer position is a position for transferring a plurality of substrates W between the second transport mechanism WTR.

In addition, since the tank carrier 47 is rotated by the rotating mechanism 49, when the tank carrier 47 is contaminated, it can be restored by simply replacing the tank carrier 47. Therefore, the downtime of the substrate processing device 1 can be shortened, and the operation rate can be expected to be improved.

<8. Clean and dry the part>

Refer to Figures 3 and 4 to explain the cleaning and drying unit CDU.

The cleaning and drying unit CDU has a support frame 101, a cleaning liquid nozzle 103 and a gas nozzle 105.

The support frame 101 is arranged above the underwater posture conversion unit 25 by means of a support column not shown in the figure. As shown in FIG3 , its height is slightly above the upper surface of the tank carrier 47 at the highest position. Thus, even when the tank carrier 47 is moved to the highest position, the hands 29 can be washed and dried. In other words, the hands 29 can be washed and dried regardless of the height position of the tank carrier 47.

The support frame 101 has a top plate portion 101a and a side portion 101b. The support frame 101 is arranged directly above the immersion tank 43. The support frame 101 is arranged in a position close to the second row R2 in the immersion tank 43 in the width direction Y. As shown in FIG. 3, the support frame 101 is arranged at a position that does not overlap with the in-tank carrier 47 set in a longitudinal state when viewed from above. In FIG. 4, the in-tank carrier 47 set in a longitudinal state is shown by hatching. The support frame 101 has side portions 101b at both ends in the front-rear direction X. Each side portion 101b is arranged to hang down from the top plate portion 101a. In other words, when viewed from the width direction Y, the support frame 101 is in a bracket shape. The support frame 101 does not have a bottom surface.

The cleaning liquid nozzle 103 and the gas nozzle 105 are installed on the support frame 101. Specifically, the cleaning liquid nozzle 103 and the gas nozzle 105 are installed on the top plate portion 101a of the support frame 101. In other words, the cleaning liquid nozzle 103 and the gas nozzle 105 are installed on the lower surface of the top plate portion 101a.

The cleaning liquid nozzle 103 is installed near the left side Y of the support frame 101 in the width direction Y. In other words, the cleaning liquid nozzle 103 is installed on the side of the lift LF4 of the support frame 101 in the width direction Y. The cleaning liquid nozzle 103 is composed of two, for example. The two cleaning liquid nozzles 103 are separated in the front-rear direction X. Each cleaning liquid nozzle 103 has the same structure. Each cleaning liquid nozzle 103 sprays cleaning liquid downward. Each cleaning liquid nozzle 103 is arranged at a position where cleaning liquid can be supplied to the hand 29 of the central robot CR. The cleaning liquid is, for example, pure water or an organic solvent. The organic solvent is, for example, IPA (isopropyl alcohol).

The gas nozzle 105 is composed of, for example, two nozzles. The two gas nozzles 105 are arranged closer to the second row R2 in the width direction Y than the cleaning liquid nozzle 103. In other words, the two gas nozzles 105 are arranged at a position closer to the center robot CR than the two cleaning liquid nozzles 103. The two gas nozzles 105 are arranged spaced apart in the front-rear direction X. Each gas nozzle 105 has the same structure. Each gas nozzle 105 sprays gas downward. Each gas nozzle 105 is arranged at a position where gas can be supplied to the hand 29 of the center robot CR. The gas is, for example, nitrogen ( _N2 gas). Nitrogen is preferably dry nitrogen. As long as the gas is an inert gas, it may be other than nitrogen.

The number of the cleaning liquid nozzle 103 and the gas nozzle 105 is not limited to 2 as long as they can clean and dry the hands 29. They can be 1 each. They can also be 3 or more each.

The washing and drying unit CDU is constructed as described above. Therefore, the washing and drying unit CDU and the underwater posture conversion unit 25 are connected in space in the vertical direction Z. In other words, there is no component that divides the space between the washing and drying unit CDU and the underwater posture conversion unit 25 in the vertical direction Z.

As shown in FIG3 , the hand 29 of the central robot CR moves forward and backward relative to the washing and drying section CDU in the width direction Y. Specifically, the central robot CR moves the hand 29 across the first horizontal position HP1 and the second horizontal position HP2. These positions are the positions of the front end of the hand 29. The first horizontal position HP1 is a position close to the underwater posture conversion section 25 and the washing and drying section CDU in the width direction Y. The second horizontal position HP2 is a position close to the opening 51 of the in-tank carrier 47 set in a longitudinal state in the width direction Y. In other words, the second horizontal position HP2 is a position further to the left Y in the width direction Y than the first horizontal position HP1.

The height of the central robot CR in the vertical direction Z of the hand 29 is raised and lowered across the first height position VP1 and the second height position VP2. The first height position VP1 is the entry height when the substrate W is taken out from the carrier 47 in the tank. After the hand 29 enters the first height position VP1, it rises slightly in the vertical direction Z to pick up the substrate W, places the substrate W and exits. The second height position VP2 is the entry height when the hand 29 is cleaned and dried by the cleaning and drying unit CDU. The second height position VP2 is also the exit height when exiting from the cleaning and drying unit CDU. However, when the hand 29 is exited during cleaning and drying, it can also be slightly raised in the vertical direction Z as when the substrate W is received. In this way, the lifting control of the hand 29 in the central robot CR can be simplified.

The operation of the cleaning and drying unit CDU constructed as described above will be described in detail later. In addition, the above-mentioned gas nozzle 105 is equivalent to the "drying mechanism" of the present invention.

<9. Action Instructions>

Referring to Figures 7 to 14, the operation of the underwater posture conversion unit 25 in the substrate processing device 1 is described. Figures 7 to 14 are diagrams for explaining the operation of the underwater posture conversion unit.

<9-1. Batch processing>

The plurality of substrates W are etched with phosphoric acid by the chemical liquid processing unit CHB1, and then cleaned with pure water by the pure water processing unit ONB. The plurality of substrates W cleaned with pure water are transported to the underwater posture conversion unit 25 by the second transport mechanism WTR.

<9-2. Posture transition>

Refer to Fig. 7. The second transport mechanism WTR holds the plurality of substrates W that have been processed in the pure water treatment section ONB with the hand 23 and transports them to the top of the underwater posture conversion section 25. At this time, the support section 65 of the lift LF4 of the underwater posture conversion section 25 is located at the second height position P2. The in-tank carrier 47 is held on the support section 65. The immersion tank 43 is supplied with pure water from the upward flow of the spray pipe 43a. The pure water in the immersion tank 43 overflows from the upper edge to the surrounding. In this way, the immersion tank 43 is always filled with clean pure water. The locking piece 57b of the actuating shaft 57a of the rotating mechanism 49 is set to the open position. That is, the rotating mechanism 49 is separated from the in-tank carrier 47. The pusher 45 rises from the standby position of the immersion tank 43 to the transfer position. Thus, the pusher 45 abuts against and supports the lower edge of the plurality of substrates W held by the second transport mechanism WTR.

Refer to Figure 8. The second transport mechanism WTR releases the grip of the hand 23 and opens the plurality of substrates W. As a result, the plurality of substrates W are transferred from the second transport mechanism WTR to the pusher 45. Then, the second transport mechanism WTR avoids from above the underwater posture conversion unit 25. Specifically, it moves in the direction of the first batch processing unit BPU1.

The lifting mechanism 67 drives the motor 69 to raise the lift LF4 to the handover position. Specifically, the lift LF4 is raised to the third height position P3. Thus, the carrier 47 in the groove accommodates a plurality of substrates W supported at the lower edge by the pusher 45.

Refer to Figure 9. The lifting mechanism 83 rotates the driving motor 85 and lowers the pusher 45 to the standby position. In this way, the plurality of substrates W are completely stored in the tank carrier 47.

Refer to Figure 10. The lifting mechanism 67 rotates and drives the motor 69, and lowers the lift LF4 to the second height position P2.

Refer to Figure 11. The rotating mechanism 49 actuates the cylinder 57 to cause the actuating shaft 57a to enter the carrier 47 in the groove. The rotating mechanism 49 causes the actuating shaft 57a to enter the connection position. As a result, the snap-fitting piece 57b of the cylinder 57 snaps into the snap-fitting portion 55 of the carrier 47 in the groove. The carrier 47 in the groove is clamped by a pair of actuating shafts 57a while being supported by the lift LF4. Then, the motor 69 of the rotary driving lifting mechanism 67 is driven to lower the lift LF4 to the first height position P1. As a result, the carrier 47 in the groove is clamped only by a pair of actuating shafts 57a.

Refer to Figure 12. The rotation mechanism 49 of the posture conversion unit 41 is activated. Specifically, the motor 59 of the rotation drive rotation mechanism 49 is rotated to rotate the in-tank carrier 47 together with the cylinder 57 around the axis of the front-rear direction X. In other words, the rotation drive motor 59 rotates the in-tank carrier 47 counterclockwise when viewed from the pure water treatment unit ONB side. The rotation angle is 90°. Thereby, the in-tank carrier 47 changes from a horizontal posture (horizontally long state) to a longitudinal posture (longitudinally long state). Therefore, the posture of the plurality of substrates W is changed from a vertical posture to a horizontal posture. At this time, the plurality of substrates W are still immersed in the pure water of the immersion tank 43. When the multiple substrates W are changing their positions, no part of them is exposed from the pure water.

In this way, by rotating the rotating mechanism 49 to drive a pair of actuating shafts 57a in the connection position, the carrier 47 in the slot can be rotated to uniformly convert the postures of multiple substrates W into a horizontal posture. Therefore, since the postures of multiple substrates W can be converted by a simple structure, the device cost can be suppressed.

Refer to Figure 13. The lift LF4 is raised to the fourth position P4 by the lifting mechanism 67. Thus, the support part 65 of the lift LF4 holds the in-tank carrier 47 in a vertical position in the liquid. Furthermore, the cylinder 57 is contracted to move the actuating shaft 57a to the open position. Thus, the in-tank carrier 47 is held only by the lift LF4.

Refer to Figure 14. The lift LF4 is raised from the fourth position P4 by the lifting mechanism 67 to a position where only the top substrate W of the carrier 47 in the tank is exposed from the liquid surface. The substrate W is the object of transportation by the central robot CR. In this way, the substrate W at the top position is exposed from the liquid surface of the immersion tank 43 while the pure water stored in the immersion tank 43 is contained on the upper surface. In this state, the central robot CR causes the hand 29 to enter the carrier 47 in the tank and carry out the substrate W at the top position.

When the center robot CR moves to the underwater posture conversion unit 25 to transport the next substrate W, the lift LF4 is further raised by the lifting mechanism 67. Specifically, only the spacing of the slots of the carrier 47 in the rising tank is increased. In this way, only the next substrate W is exposed from the liquid surface of the immersion tank 43. In this state, the center robot CR carries out the substrate W. In this way, every time the center robot CR moves, the lift LF4 is gradually raised by the lifting mechanism 67. In this way, all substrates W are transported by the center robot CR in a state of being wetted with pure water.

In this way, the substrate W other than the transport object that is not transported by the central robot CR is located below the liquid surface of the immersion tank 43. Therefore, it is possible to prevent the substrate W from drying before becoming the transport object of the central robot CR. As a result, the collapse of the pattern of the substrate W can be suppressed.

<9-3. Single chip processing>

As described above, the substrate W transported by the central robot CR is processed as follows, for example.

The central robot CR transports the substrate W to the first single-wafer processing unit SWP1. The first single-wafer processing unit SWP1 rotates the substrate W by, for example, the rotating processing unit 33, and supplies pure water from the nozzle 35. Then, IPA is supplied to the substrate W from the nozzle 35, and the pure water on the substrate W is replaced with IPA. Then, the central robot CR carries out the substrate W and transports it to the third single-wafer processing unit SWP3. In the third single-wafer processing unit SWP3, the substrate W is carried into the supercritical fluid chamber 37. The substrate W is dried by carbon dioxide in the supercritical fluid chamber 37. The substrate W is finely dried by the drying process in the supercritical fluid chamber 37. Thus, the substrate W is completely dried, but the collapse of the pattern formed on the substrate W can be suppressed.

The substrate W that has completed the drying process in the supercritical fluid chamber 37 is transported to the buffer section 31 by the central robot CR. The central robot CR places the substrate W on the loading shelf 39 of the buffer section 31. When a batch of substrates W is placed in the buffer section 31, the first transport mechanism HTR transports a plurality of substrates W to the transport storage section ACB at one time. The transport storage section ACB transports the carrier C together with the carrier to the extraction section 13. All substrates W in the carrier 47 in the tank are subjected to the above-mentioned single-chip processing and subsequent transport. In this way, all substrates W can be processed in batches and processed individually.

<9-4. Washing and drying of hands 29>

As described above, finally, after the plurality of substrates W are dried in the supercritical fluid chamber 37, they are transported by the central robot CR and placed in the buffer section 31. The hand 29 of the central robot CR is wetted with pure water when receiving the substrate W in the underwater posture conversion section 25. When the substrate W that has been dried in the supercritical fluid chamber 37 is transported by the wet hand 29, the substrate W that has been dried is wetted. In other words, there is a risk that the substrate W may be contaminated by the wet hand 29. Therefore, before transporting the substrate W from the supercritical fluid chamber 37, the hand 29 is cleaned and dried as follows.

Here, before the substrate W is transported from the supercritical fluid chamber 37, it means before the substrate W is about to be transported from the supercritical fluid chamber 37. Moreover, before the substrate W is transported from the supercritical fluid chamber 37, it means after receiving the substrate W from the underwater posture conversion unit 25 and transporting the substrate W to the first single-wafer processing unit SWP1 or the second single-wafer processing unit SWP2.

Here, refer to Figures 15 to 18. Figures 15 to 18 are diagrams for explaining the operation of the washing and drying part. In addition, the hand 29 of the central robot CR rises to the second height position VP2.

As shown in FIG. 15 , the hand 29 of the center robot CR is positioned at the first horizontal position HP1. The cleaning liquid nozzle 103 of the cleaning drying unit CDU sprays pure water. From this state, the hand 29 of the center robot CR moves to the left in the width direction Y. The moving speed at this time is preferably lower than the movement of the substrate W in the carrier 47 in the receiving tank. The reason is that the cleaning effect of pure water can be expected.

As shown in FIG. 16 , the hand 29 moves and reaches the second horizontal position HP2. The hand 29 stops temporarily at the second horizontal position HP2. At this time, the entire front end side of the hand 29 is cleaned by pure water sprayed from the cleaning liquid nozzle 103. Thus, even if particles or pure water are attached to the substrate W when the carrier 47 in the self-tank receives it, it is also rinsed by pure water. The pure water flowing down the hand 29, including particles, flows down to the immersion tank 43. Since the pure water in the immersion tank 43 overflows from the upper edge, it does not have an adverse effect on the substrate W in the immersion tank 43.

After the hand 29 reaches the second horizontal position HP2, the pure water is stopped from being sprayed from the cleaning liquid nozzle 103. Then, as shown in FIG. 17, nitrogen is sprayed from the gas nozzle 105. And the hand 29 is moved from the second horizontal position HP2 toward the first horizontal position HP1. Specifically, the hand 29 is moved to the right Y in the width direction Y. The moving speed at this time is also preferably lower than the movement of the substrate W in the carrier 47 in the receiving tank. The reason is that the drying effect of nitrogen can be expected.

As shown in FIG. 18 , the hand 29 moves and reaches the first horizontal position HP1. Thus, the hand 29 removes the attached pure water by the nitrogen gas from the gas nozzle 105. In other words, the hand 29 is dehydrated by the nitrogen gas. The pure water removed from the hand 29 flows downward. Thus, the hand 29 of the center robot CR can be cleaned.

According to the present embodiment, the hand 29 is cleaned and dried by the cleaning and drying unit CDU before the substrate W is transported from the supercritical fluid chamber 37. Therefore, the central robot CR can clean the hand 29. Therefore, although the central robot CR transports the wet substrate W from the underwater posture conversion unit 25, it can prevent contamination when the dry substrate W is transported from the supercritical fluid chamber 37. Therefore, even if the wet substrate W is transported by the hand 29, contamination can be prevented when the dry substrate W is transported.

In addition, in the above-mentioned embodiment, the timing of cleaning and drying the hand 29 is set before the substrate W is transported from the supercritical fluid chamber 37. This does not mean that the hand 29 is cleaned and dried every time the hand 29 is wetted by transporting the substrate W from the underwater posture conversion unit 25 to the second single-wafer processing unit SWP2 and the third single-wafer processing unit SWP3. Therefore, the frequency of cleaning and drying the hand 29 can be reduced. As a result, the amount of pure water or nitrogen gas required for cleaning and drying can be saved.

Through the above-mentioned cleaning and drying process, the pure water removed from the hand 29 of the center robot CR flows downward. The immersion tank 43 storing the pure water is located below. Therefore, there is no need to configure a chassis for the cleaning and drying unit CDU. As a result, the structure can be simplified and the cost can be suppressed. In addition, the cleaning and drying unit CDU is arranged above the underwater posture conversion unit 25. Therefore, the area occupied by the substrate processing device 1 can be reduced.

The present invention is not limited to the above-mentioned implementation form, and can be implemented in various ways as described below.

(1) In the above-mentioned embodiment, the hand 29 is cleaned and dried before the substrate W is transported from the supercritical fluid chamber 37. However, the present invention is not limited to this timing of cleaning and drying. For example, the hand 29 may be cleaned and dried after the substrate W is transported from the underwater posture conversion unit 25 to the first single-wafer processing unit SWP1 or the second single-wafer processing unit SWP2 and before other substrates W are transported.

In other words, each time the hand 29 is wetted by transferring the substrate W from the underwater posture conversion unit 25 to the first single-wafer processing unit SWP1 or the second single-wafer processing unit SWP2, the hand 29 is cleaned and dried. In other words, if the hand 29 is wetted, it is cleaned and dried as soon as possible. Therefore, the time from the wetting of the hand 29 to the cleaning and drying can be shortened. Therefore, by allowing a long time after the hand 29 is wetted, the residue caused by the attached pure water can be prevented from being generated on the hand 29. As a result, the cleanliness of the hand 29 can be improved.

(2) In the above embodiment, the cleaning and drying unit CDU is arranged above the underwater posture conversion unit 25. However, the present invention is not limited to this configuration. That is, the cleaning and drying unit CDU may be arranged at a position that does not overlap with the first batch processing unit BPU1 or the underwater posture conversion unit 25 when viewed from above.

(3) In the above-mentioned embodiment, the gas nozzle 105 is used as an example of a drying mechanism. However, the present invention is not limited to this structure. For example, a drying mechanism as shown in FIG. 19 may also be used. In addition, FIG. 19 is a side view showing a variation of the drying mechanism.

The hand 29 has a heater 107 as a drying mechanism inside. The heater 107 is electrically connected to a heater power supply 109. The heater power supply 109 is operated by the control unit CU. The heater power supply 109 controls the power supplied to the heater 107 by the control unit CU. The above-mentioned gas nozzle 105 can also be replaced by heating the heater 107 through the heater power supply 109 to dry the washed hand 29. In this way, after being washed by the cleaning liquid nozzle 103, the hand 29 can be moved to a position different from the cleaning and drying unit CDU while being dried. In addition, the above-mentioned gas nozzle 105 and the heater 107 can also be used together.

When the above-mentioned structure is adopted, for example, it is preferable to construct the hand 29 as follows. For example, the heater 107 is arranged on the upper surface of the stainless steel plate, and the stainless steel plate and the heater 107 are coated with fluororesin. Or, the heater 107 is arranged on the upper surface of the ceramic component, and the ceramic component and the heater 107 are coated with fluororesin. In this way, the chemical resistance of the hand 29 can be prevented from being reduced, and the heater 107 can be easily placed in the hand 29.

(4) In the above-mentioned embodiment, the hand 29 is cleaned and dried in the cleaning and drying unit CDU. However, the cleaning and drying unit CDU may be omitted, and the first single-chip processing unit SWP1 or the second single-chip processing unit SWP2 may be used for cleaning and drying. In this case, after the hand 29 is moved to the first single-chip processing unit SWP1 or the second single-chip processing unit SWP2, a processing liquid is supplied from the nozzle 35 as a cleaning liquid. Subsequently, nitrogen gas is supplied from the nozzle 35 and a drying process is performed. In this way, the cleaning and drying unit CDU can be used by the first single-chip processing unit SWP1 or the second single-chip processing unit SWP2. Therefore, the structure can be simplified and the device cost can be suppressed.

(5) In the above-mentioned embodiment, the cleaning and drying unit CDU supplies gas after supplying the cleaning liquid to dry it. However, the present invention is not limited to this form. For example, an organic solvent may be supplied instead of the gas to dry it. In this case, an organic solvent with a lower boiling point is preferred. Specifically, IPA (isopropyl alcohol) can be cited as an example.

(6) In the above-mentioned embodiment, the substrate processing device 1 is described as having only one cleaning and drying unit CDU. However, the present invention is not limited to this structure. Here, referring to FIG. 20 , a modified example, that is, a substrate processing device 1A is described as an example. FIG. 20 is a top view showing a modified example of the substrate processing device.

The substrate processing apparatus 1A includes a first cleaning and drying unit CDU1 and a second cleaning and drying unit CDU2. The first cleaning and drying unit CDU1 is arranged above the underwater posture conversion unit 25 as described in the embodiment. The second cleaning and drying unit CDU2 is used as the second single-wafer processing unit SWP2 as described in the variation. In other words, the first cleaning and drying unit CDU1 and the second cleaning and drying unit CDU2 are arranged in the width direction Y across the second row R2. The first cleaning and drying unit CDU1 and the second cleaning and drying unit CDU2 are arranged staggered in the front-rear direction X. The first cleaning and drying unit CDU1 and the second cleaning and drying unit CDU2 are arranged at different positions when viewed from above.

In this configuration, the central robot CR can clean and dry the hands 29 in either the first cleaning and drying unit CDU1 or the second cleaning and drying unit CDU2. In this configuration, it is preferred that the control unit CU performs control as follows.

That is, the control unit CU can know the current position of the central robot CR. In addition, the control unit CU memorizes the positions of the first cleaning and drying unit CDU1 and the second cleaning and drying unit CDU2. Therefore, the control unit CU can currently determine whether the central robot CR is close to the first cleaning and drying unit CDU1 or the second cleaning and drying unit CDU2. When washing and drying the hand 29 of the central robot CR, the control unit CU selects the closer one of the first cleaning and drying unit CDU1 and the second cleaning and drying unit CDU2 and moves the central robot CR. By controlling in this way, the hand 29 can be cleaned quickly. Therefore, it is not easy to generate residues caused by pure water attached to the hand 29. In addition, since the substrate W can be quickly transported from the supercritical fluid chamber 37, the processing throughput can be increased.

In addition, more than three cleaning and drying CDUs can be deployed in different locations.

(7) In the above-mentioned embodiments and variations, the substrate processing apparatus 1, 1A having an underwater posture conversion unit 25 is used as an example for explanation. However, the present invention does not necessarily require an underwater posture conversion unit 25. That is, even if a posture conversion unit is provided to convert the posture of the substrate W from a vertical posture to a horizontal posture, and a nozzle is provided to blow pure water to the substrate W after the posture conversion, it can also be applied.

(8) In the above-mentioned embodiments and variations, the substrate processing device 1, 1A is described as having a structure as shown in FIG. 1 or FIG. 20. However, the present invention is not limited to such a structure. In other words, the storage block 5, the first transport mechanism HTR, and the transfer mechanism CTC are not required.

Without departing from the spirit or basic properties of the present invention, the present invention may be implemented in other specific forms. Therefore, the scope of the attached patent application should be referred to rather than the above description to indicate the scope of the present invention.

25: Underwater posture transition section

29: Hands

43: Dipping tank

43a: Spray pipe

45:Thruster

47: Carrier in slot

65: Support Department

79:Through hole

101:Support framework

101a: Top plate

101b: Lateral face

103: Detergent nozzle

105: Gas nozzle

CDU: Washing and drying department

CR: Center Robot

HP1: 1st horizontal position

HP2: 2nd horizontal position

VP1: 1st height position

VP2: 2nd height position

W: Substrate

X: front and back direction

Y: width direction

Z: Lead vertical direction

Claims (20)

A substrate processing device is used to process substrates; the device includes the following elements: a batch processing unit, which processes a plurality of substrates in a state of a vertical position; a single-wafer processing unit, which processes a single substrate in a state of a horizontal position; a posture conversion unit, which holds the plurality of substrates processed by the batch processing unit and converts the plurality of substrates from a vertical position to a water position when wetted with pure water. horizontal posture; the first conveying section, which conveys the plurality of substrates processed by the batch processing section to the posture conversion section; the second conveying section, which supports the substrates set to a horizontal posture by the posture conversion section on the hand and conveys them to the single-wafer processing section, and supports the substrates processed by the single-wafer processing section on the hand and conveys them from the single-wafer processing section; and the cleaning and drying section, which cleans and dries the hand of the second conveying section. The substrate processing device of claim 1, wherein the cleaning and drying section cleans and dries the hand before the second conveying section conveys the substrate processed by the single-wafer processing section from the single-wafer processing section. The substrate processing device of claim 1, wherein the cleaning and drying section cleans and dries the hand after transferring the substrate from the posture conversion section to the single-wafer processing section. The substrate processing device of claim 2, wherein the cleaning and drying section cleans and dries the hand after transferring the substrate from the posture conversion section to the single-wafer processing section. As in claim 1, the substrate processing device, wherein the cleaning and drying section is arranged above the posture conversion section. As in claim 2, the substrate processing device, wherein the cleaning and drying section is arranged above the posture conversion section. As in claim 3, the substrate processing device, wherein the cleaning and drying section is arranged above the posture conversion section. As in claim 4, the substrate processing device, wherein the cleaning and drying section is arranged above the posture conversion section. As in claim 5, the substrate processing device, wherein the spaces between the cleaning and drying section and the posture conversion section are connected in the vertical direction. As in claim 6, the substrate processing device, wherein the spaces between the cleaning and drying section and the posture conversion section are connected in the vertical direction. A substrate processing device as claimed in claim 7, wherein the spaces between the cleaning and drying section and the posture conversion section are connected in the vertical direction. As in claim 8, the substrate processing device, wherein the spaces between the cleaning and drying section and the posture conversion section are connected in the vertical direction. The substrate processing device of claim 1, wherein the cleaning and drying section comprises: a cleaning liquid nozzle that sprays cleaning liquid toward the hand; and a drying mechanism that dries the hand. The substrate processing device of claim 2, wherein the cleaning and drying section comprises: a cleaning liquid nozzle that sprays cleaning liquid toward the hand; and a drying mechanism that dries the hand. The substrate processing device of claim 3, wherein the cleaning and drying section comprises: a cleaning liquid nozzle that sprays cleaning liquid toward the hand; and a drying mechanism that dries the hand. The substrate processing device of claim 5, wherein the cleaning and drying section comprises: a cleaning liquid nozzle that sprays cleaning liquid toward the hand; and a drying mechanism that dries the hand. The substrate processing device of claim 9, wherein the cleaning and drying section comprises: a cleaning liquid nozzle that sprays cleaning liquid toward the hand; and a drying mechanism that dries the hand. As in claim 13, the substrate processing device, wherein the drying mechanism is a gas nozzle that supplies gas to the hand. The substrate processing device of claim 1, wherein the above-mentioned single-chip processing section has: a spin chuck that rotatably supports the substrate in a horizontal position; a processing liquid supply mechanism that supplies processing liquid to the substrate supported by the above-mentioned spin chuck; and a gas supply mechanism that supplies gas to the substrate supported by the above-mentioned spin chuck; and the above-mentioned cleaning and drying section is realized by using the above-mentioned processing liquid supply mechanism and the above-mentioned gas supply mechanism of the above-mentioned single-chip processing section to clean and dry the above-mentioned hand. The substrate processing device of claim 1 is provided with: a plurality of the cleaning and drying sections, and the plurality of the cleaning and drying sections are arranged at different positions when viewed from above; and according to the position of the second conveying section, the cleaning and drying section that is closer performs cleaning and drying.