TWI867461B - Light emitting device - Google Patents

Abstract

A light emitting device includes a substrate including a base member including a front surface, a rear surface opposite to the front surface, a bottom surface adjacent to, and perpendicular to, the front surface, and a top surface opposite to the bottom surface, a first wiring portion located on the front surface, and a second wiring portion located on the rear surface; at least one light emitting element electrically connected with, and placed on, the first wiring portion; and a first reflective member covering a lateral surface of the light emitting element and the front surface of the substrate. The base member has at least one recessed portion opened on the rear surface and the bottom surface. The substrate includes a third wiring portion covering an inner wall of the recessed portion and electrically connected with the second wiring portion, and a via in contact with the first wiring portion, the second wiring portion and the third wiring portion.

Description

Light emitting device

The present invention relates to a light emitting device.

A light-emitting device is known, which has a recessed electrode electrically connected to an electrode pattern via a through hole, and the recessed electrode is electrically connected to an electrode of a motherboard by solder, so that it can be mounted on a motherboard (for example, refer to Patent Document 1). [Prior Art Document] [Patent Document]

[Patent Document 1] Japanese Patent Publication No. 2012-124191

[The problem the invention is trying to solve]

As the output of light-emitting elements (LED elements) increases, the amount of heat generated increases, so a light-emitting device with higher heat dissipation is required. Therefore, the embodiment of the present invention aims to provide a light-emitting device with higher heat dissipation. [Technical means to solve the problem]

One aspect of the present invention comprises a light-emitting device comprising: a substrate having a front surface extending in a long side direction, i.e., a first direction, and a short side direction, i.e., a second direction, a back surface located on the opposite side of the front surface, a bottom surface adjacent to the front surface and orthogonal to the front surface, and a substrate having an upper surface located on the opposite side of the bottom surface, a first wiring arranged on the front surface, and a second wiring arranged on the back surface; at least one light-emitting element electrically connected to the first wiring and mounted on the first wiring; and a first reflecting member covering the side surface of the light-emitting element and the front surface of the substrate, the substrate having at least one recess opening on the back surface and the bottom surface, the substrate having a third wiring covering the inner wall of the recess and electrically connected to the second wiring, and a conducting hole connected to the first wiring, the second wiring, and the third wiring. [Effect of the invention]

According to the light-emitting device of the embodiment of the present invention, a light-emitting device with higher heat dissipation performance can be provided.

The following description will be made with reference to the drawings to explain the embodiments of the invention. However, the light-emitting device described below is used to embody the technical concept of the invention. Unless otherwise specified, the invention is not limited to the following. In addition, the contents described in one embodiment can also be applied to other embodiments and variations. Furthermore, for the sake of clarity, the size and position relationship of the components shown in the drawings are exaggerated.

<Implementation Form 1> A light-emitting device 1000 of an implementation form of the present invention is described based on FIGS. 1A to 8B. The light-emitting device 1000 has a substrate 10, at least one light-emitting element 20, and a first reflective member 40. The substrate 10 has a substrate 11, a first wiring 12, a second wiring 13, a third wiring 14, and a via 15. The substrate 11 has a front surface 111 extending in a long side direction, i.e., a first direction, and a short side direction, i.e., a second direction, a back surface 112 located on the opposite side of the front surface, a bottom surface 113 adjacent to the front surface 111 and orthogonal to the front surface 111, and an upper surface 114 located on the opposite side of the bottom surface 113. The substrate 11 further has at least one recess 16. The first wiring 12 is arranged on the front surface 111 of the substrate 11. The second wiring 13 is arranged on the back surface 112 of the substrate 11. The light-emitting element 20 is electrically connected to the first wiring 12 and is mounted on the first wiring 12. The first reflective member 40 covers the side surface 202 of the light-emitting element 20 and the front surface 111 of the substrate. At least one recess is opened on the back surface 112 and the bottom surface 113. The third wiring 14 covers the inner wall of the recess and is electrically connected to the second wiring. The via 15 is connected to the first wiring 12, the second wiring 13 and the third wiring 14. The via 15 electrically connects the first wiring 12, the second wiring 13 and the third wiring 14. In addition, the via 15 passes through the back surface 112 from the front surface 111 of the substrate 11. In addition, the so-called orthogonal in this specification means 90±3°.

The via hole 15 is connected to the first wiring 12, the second wiring 13, and the third wiring 14. Thus, since the heat from the light-emitting element can be transferred from the first wiring 12 to the second wiring 13 and/or the third wiring 14 via the via hole 15, the heat dissipation of the light-emitting device 1000 can be improved. When the via hole 15 is connected to the second wiring 13 and the third wiring 14, as shown in FIG. 3, the via hole 15 overlaps with the second wiring 13 and the third wiring 14 in a rear view. In addition, when the substrate has a plurality of via holes, the plurality of via holes may be all connected to the first wiring, the second wiring, and the third wiring, or the plurality of via holes may be not all connected to the first wiring, the second wiring, and the third wiring. For example, when the substrate has a plurality of via holes, one via hole may be connected to the first wiring, the second wiring, and the third wiring, and another via hole may be connected to the first wiring, the second wiring, and separated from the third wiring. By connecting a portion of the plurality of via holes to the first wiring, the second wiring, and the third wiring, the heat dissipation of the light-emitting device can be improved. The via hole 15 is preferably circular in rear view. Thus, it can be easily formed by a drill or the like. When the via hole 15 is circular in rear view, the diameter of the via hole is preferably not less than 100 μm and not more than 150 μm. When the diameter of the via hole is 100 μm or more, the heat dissipation of the light-emitting device is improved, and when the diameter of the via hole is 150 μm or less, the strength reduction of the substrate is reduced. In this specification, the circular shape is not only a perfect circle, but also includes shapes close to it (for example, it can also be an elliptical shape, or a shape in which the four corners of a quadrilateral are greatly chamfered into an arc shape). When viewed from behind, it is preferred that the overlapping area of the via hole and the second wiring 13 is larger than the overlapping area of the via hole and the third wiring 14. Thereby, the volume of the via hole can be increased, so the heat dissipation of the light-emitting device is improved. In addition, it is preferred that the via hole is located in the center of the substrate in the Y direction. Thereby, the portion where the thickness of the substrate becomes thinner in the thickness from the end of the via hole to the end of the substrate in the Y direction can be reduced, thereby improving the strength of the substrate.

As shown in FIG. 4A to FIG. 4C , the via hole 15 has a portion D1 where the via hole 15 is in contact with the third wiring 14 in the front direction (Z direction) from the back. In this way, not only the via hole 15 is in contact with the third wiring 14 in the X direction and the Y direction, but also the via hole 15 is in contact with the third wiring 14 in the front direction (Z direction) from the back, so the contact area between the via hole 15 and the third wiring 14 can be increased. In this way, since the heat from the light-emitting element is easily transferred from the first wiring 12 to the third wiring 14 through the via hole 15, the heat dissipation of the light-emitting device 1000 can be improved. In addition, in this specification, the front direction from the back is also referred to as the Z direction.

The light emitting device 1000 can be fixed to the mounting substrate by a bonding member such as solder formed in the recess 16. There is a concern that a force caused by thermal expansion of the bonding member may be applied to the third wiring covering the inner wall of the recess 16. Since the via 15 has a portion D1 where the via 15 and the third wiring 14 are in contact in the Z direction, the bonding strength between the via 15 and the third wiring 14 is improved. Thus, even if a force from the bonding member is applied to the third wiring, the third wiring 14 can be prevented from being peeled off from the substrate 11.

The via 15 can also be formed by filling a conductive material in the through hole of the substrate. As shown in FIG. 2A , it can also include a fourth wiring 151 covering the surface of the through hole of the substrate, and a filling member 152 filled in the area surrounded by the fourth wiring 151. The filling member 152 can be conductive or insulating. It is preferred to use a resin material for the filling member 152. Generally speaking, since the fluidity of the resin material before curing is higher than that of the metal material before curing, it is easy to fill in the fourth wiring 151. Therefore, by using a resin material for the filling member, the manufacture of the substrate becomes easy. As an example of a resin material that is easy to fill, epoxy resin is cited. When a resin material is used as a filling member, it is preferable to include an additive member in order to reduce the linear expansion coefficient. In this way, since the difference in linear expansion coefficient with the fourth wiring becomes smaller, it is possible to suppress the generation of a gap between the fourth wiring and the filling member due to the heat from the light-emitting element. As an additive member, for example, silicon oxide is cited. In addition, when a metal material is used for the filling member 152, heat dissipation can be improved. In addition, when the via 15 is formed by filling a conductive material in a through hole of a substrate, it is preferable to use a metal material such as Ag, Cu, etc. having high thermal conductivity.

The number of recesses provided on the substrate may be one or more. By having a plurality of recesses, the bonding strength between the light-emitting device 1000 and the mounting substrate can be improved. The depth of the recess may be the same on the upper surface side and the bottom surface side, or may be deeper on the bottom surface side than on the upper surface side. As shown in FIG2B , since the depth of the recess 16 in the Z direction is deeper on the bottom surface side than on the upper surface side, the thickness W1 of the substrate on the upper surface side of the recess can be made thicker than the thickness W2 of the substrate on the bottom surface side of the recess in the Z direction. In this way, the reduction in the strength of the substrate can be suppressed. Furthermore, since the depth W3 of the recess on the bottom surface side is deeper than the depth W4 of the recess on the upper surface side, the volume of the bonding component formed in the recess increases, thereby improving the bonding strength between the light-emitting device 1000 and the mounting substrate. Regardless of whether the light-emitting device 1000 is a top-emitting type (front-emitting type) in which the back surface 112 of the substrate 11 is mounted opposite to the mounting substrate, or a side-emitting type (side-emitting type) in which the bottom surface 113 of the substrate 11 is mounted opposite to the mounting substrate, the bonding strength with the mounting substrate can be improved due to the increase in the volume of the bonding component.

The bonding strength between the light-emitting device 1000 and the mounting substrate can be improved, especially in the case of a side-emitting type. Since the depth of the recess in the Z direction is deeper on the bottom surface side than on the top surface side, the area of the opening of the recess on the bottom surface can be increased. Since the area of the opening of the recess on the bottom surface opposite to the mounting substrate becomes larger, the area of the bonding member located on the bottom surface can also be increased. In this way, since the area of the bonding member located on the surface opposite to the mounting substrate can be increased, the bonding strength between the light-emitting device 1000 and the mounting substrate can be improved.

The maximum depth of the recess in the Z direction is preferably 0.4 to 0.9 times the thickness of the substrate in the Z direction. Since the depth of the recess is 0.4 times deeper than the thickness of the substrate, the volume of the bonding member formed in the recess is increased, thereby improving the bonding strength between the light-emitting device and the mounting substrate. Since the depth of the recess is 0.9 times shallower than the thickness of the substrate, the strength reduction of the substrate can be suppressed.

As shown in FIG. 2B , the recess 16 preferably has a parallel portion 161 extending from the back surface 112 in a direction parallel to the bottom surface 113 (Z direction). By having the parallel portion 161, the area of the portion D1 where the via hole is connected to the third wiring can be increased in the Z direction, so the heat dissipation of the light-emitting device can be improved. In addition, by having the parallel portion 161, the volume of the recess can be increased even if the area of the opening of the recess on the back is the same. By increasing the volume of the recess, the amount of bonding components such as solder that can be formed in the recess can be increased, so the bonding strength between the light-emitting device 1000 and the mounting substrate can be improved. In addition, the so-called parallel in this specification means that a tilt of about ±3° is allowed. Furthermore, in cross-sectional view, the recess 16 has an inclined portion 162 which is inclined from the bottom surface 113 toward the direction in which the thickness of the substrate 11 increases. The inclined portion 162 may be a straight line or may be curved.

The maximum height of the recess in the Y direction is preferably 0.3 to 0.75 times the thickness of the substrate in the Y direction. Since the depth of the recess in the Y direction is 0.3 times longer than the thickness of the substrate, the volume of the bonding member formed in the recess increases, thereby improving the bonding strength between the light-emitting device and the mounting substrate. Since the length of the recess in the Y direction is 0.75 times shallower than the thickness of the substrate, the strength reduction of the substrate can be suppressed.

As shown in FIG3 , the opening shape of the concave portion on the back side is preferably a semicircular shape. Since the opening shape of the concave portion is a semicircular shape without corners, the stress concentration on the concave portion can be suppressed, thereby suppressing the cracking of the substrate. In this specification, the so-called semicircular shape is not only a perfect semicircle, but also includes shapes similar thereto (such as an elliptical semicircle).

As shown in FIG3 , on the back side, if there are multiple recesses 16, they are preferably arranged symmetrically with respect to the center line 3C of the substrate parallel to the second direction (Y direction). Thus, when the light emitting device is mounted on the mounting substrate via the bonding member, the automatic alignment is effectively performed, and the light emitting device can be mounted within the mounting range with good accuracy.

On the bottom surface, the depth of the recess in the Z direction can be roughly constant, or the depth of the recess can be different in the center and the end. As shown in FIG5 , on the bottom surface, the depth D2 of the center of the recess 16 is preferably the maximum depth of the recess in the Z direction. Thus, on the bottom surface, the end of the recess in the X direction can be thickened by the thickness D3 of the substrate in the Z direction, thereby improving the strength of the substrate. In addition, the center in this specification means that a variation of about 5 μm is allowed. The recess 16 can be formed by a well-known method such as a drill or a laser.

As shown in FIG5 , it is preferred that the first wiring 12 exposed from the first reflective member 40 to the outside of the light emitting device is located at either the left or right side relative to the center line 5C of the substrate parallel to the second direction (Y direction). Thus, the polarity of the light emitting device can be identified based on the position of the first wiring 12 exposed from the first reflective member 40 to the outside of the light emitting device. Furthermore, when the first wiring 12 exposed from the first reflective member 40 to the outside of the light-emitting device is located on either the left or right side relative to the center line 5C of the substrate parallel to the second direction (Y direction), it is preferred that the shape of the first wiring 12 exposed from the first reflective member 40 to the outside of the light-emitting device when located on the left side relative to the center line 5C is different from the shape of the first wiring 12 exposed from the first reflective member 40 to the outside of the light-emitting device when located on the right side relative to the center line 5C. Thus, the polarity of the light-emitting device can be identified based on the shape of the first wiring 12 exposed from the first reflective member 40 to the outside of the light-emitting device.

As shown in FIG6A, the first wiring 12, the second wiring 13 and/or the third wiring 14 may also have a wiring main part 12A and a coating 12B formed on the wiring main part 12A. In this specification, the wiring refers to the first wiring 12, the second wiring 13 and/or the third wiring 14. As the wiring main part 12A, a well-known material such as copper can be used. Having the coating 12B on the wiring main part 12A can improve the reflectivity of the wiring surface and inhibit sulfurization. For example, phosphorus-containing nickel plating 120A may be located on the wiring main part 12A. Nickel has a higher hardness due to the presence of phosphorus, and therefore, by locating the phosphorus-containing nickel plating 120A on the wiring main part 12A, the hardness of the wiring is improved. This can suppress the generation of burrs in the wiring when the wiring is cut due to the singulation of the light emitting device, etc. The phosphorus-containing nickel plating can be formed by an electrolytic plating method or an electroless plating method.

As shown in FIG. 6A , it is preferred that the gold plating 120B is located on the outermost surface of the plating 12B. By placing the gold plating on the outermost surface of the plating, the surface oxidation and corrosion of the first wiring 12, the second wiring 13 and/or the third wiring 14 are suppressed, good solderability is obtained, the reflectivity can be improved, or sulfurization can be suppressed. It is preferred that the gold plating 120B located on the outermost surface of the plating 12B is formed by electrolytic plating. The electrolytic plating method can reduce the catalyst poison containing sulfur and the like compared to the non-electrolytic plating method. When curing a reactive silicone resin using a platinum catalyst at a position in contact with gold plating, the gold plating formed by electrolytic plating contains less sulfur, so the reaction between sulfur and platinum can be suppressed. In this way, poor curing of the reactive silicone resin using a platinum catalyst can be suppressed. If gold plating 120B in contact with phosphorus-containing nickel plating 120A is to be formed, the phosphorus-containing nickel plating 120A and the gold plating 120B are preferably formed by electrolytic plating. By forming the plating by the same method, the manufacturing cost of the light-emitting device can be suppressed. In addition, the so-called nickel plating may contain nickel, and the so-called gold plating may contain only gold, or may contain other materials.

Preferably, the thickness of the phosphorus-plated nickel is thicker than the thickness of the gold-plated nickel. Since the thickness of the phosphorus-plated nickel is thicker than the thickness of the gold-plated nickel, it is easy to increase the hardness of the first wiring 12, the second wiring 13 and/or the third wiring 14. The thickness of the phosphorus-plated nickel is preferably 5 times or more and 500 times or less of the thickness of the gold-plated nickel, and more preferably 10 times or more and 100 times or less.

As shown in FIG. 6B , in the light emitting device 1000A, the wiring may also be formed by laminating a nickel plating 120C containing phosphorus, a palladium plating 120D, a first gold plating 120E, and a second gold plating 120F on the wiring main part 12A. By laminating the nickel plating 120C containing phosphorus, the palladium plating 120D, the first gold plating 120E, and the second gold plating 120F, for example, when copper is used for the wiring main part 12A, diffusion of copper in the plating 12B can be suppressed. Thus, the decrease in the adhesion of each plating layer can be suppressed. Alternatively, phosphorus-containing nickel plating 120C, palladium plating 120D, and first gold plating 120E may be formed on the wiring main portion 12A by electroless plating, and second gold plating 120F may be formed by electrolytic plating. Since the second gold plating 120F formed by electrolytic plating is located on the outermost surface, curing defects of the additional reactive silicone resin using a platinum catalyst can be suppressed.

As shown in FIG2A , the light-emitting element 20 has a mounting surface opposite to the substrate 10, and a light extraction surface 201 located on the opposite side of the mounting surface. The light-emitting element 20 at least includes a semiconductor multilayer body 23, and the semiconductor multilayer body 23 is provided with positive and negative electrodes 21, 22. It is preferred to form the positive and negative electrodes 21, 22 on the same side as the light-emitting element 20, and flip-chip mount the light-emitting element 20 on the substrate 10. In this way, since a coil for supplying power to the positive and negative electrodes of the light-emitting element is not required, the light-emitting device can be miniaturized. In the case of flip-chip mounting of the light-emitting element, the surface where the positive and negative electrodes of the light-emitting element are located, i.e., the electrode forming surface 203, and the surface on the opposite side are set as the light extraction surface 201. In addition, in this embodiment, the light emitting element 20 has the element substrate 24, but the element substrate 24 may be removed. When the light emitting element 20 is flip-chip mounted on the substrate 10, the positive and negative electrodes 21 and 22 of the light emitting element are connected to the first wiring 12 via the conductive connecting member 60.

When the light-emitting element 20 is flip-chip mounted on the substrate 10, as shown in FIG. 2A and FIG. 7A, it is preferred that the first wiring 12 has a protrusion 121 at a position overlapping with the positive and negative electrodes 21 and 22 of the light-emitting element 20 in a front view. Since the first wiring 12 has the protrusion 121, when the first wiring 12 and the positive and negative electrodes 21 and 22 of the light-emitting element are connected via the conductive connecting member 60, the light-emitting element and the substrate can be easily aligned using the automatic alignment effect.

As shown in FIG. 7B , the first wiring 12 may also have a wiring extension portion 123 extending in the X direction in front view, and as shown in FIG. 7C , the first wiring 12 may not have the wiring extension portion 123 extending in the X direction. The wiring extension portion 123 refers to a portion of the first wiring 12 that has a width narrower than the width of the first wiring 12 overlapping the light-emitting element 20 in front view and extends from the portion of the first wiring 12 overlapping the light-emitting element 20. When the wiring extension portion extends in the X direction, the width of the portion of the first wiring overlapping the light-emitting element and the width of the wiring extension portion are the widths in the Y direction; when the wiring extension portion extends in the Y direction, the width of the portion of the first wiring overlapping the light-emitting element and the width of the wiring extension portion are the widths in the X direction. The wiring extension portion 123 may extend to the outer edge of the substrate in front view, or may be separated from the outer edge of the substrate. In front view, when the wiring extension portion 123 is formed by extending from a predetermined position for mounting the light-emitting element toward the X+ direction and/or the X- direction, the light-emitting element may be mounted on the substrate using the wiring extension portion 123 as a mark. The X+ direction on the X-axis is set as the direction from left to right in front view, and the opposite direction of the X+ direction is set as the X- direction. Thereby, it becomes easy to place the light-emitting element on the substrate. The first wiring 12 may have only one wiring extension portion 123, or may have a plurality of wiring extension portions 123. When there are a plurality of wiring extension portions 123, it is preferred that the wiring extension portions 123 are located on both sides of the light-emitting element in the X direction. Thereby, the wiring extension portions 123 located on both sides of the light-emitting element can be used as marks, thereby improving the position accuracy of placing the light-emitting element on the substrate. Furthermore, when a light-transmitting component is placed on the light-emitting element, the wiring extension portion is formed by extending from a predetermined position for placing the light-transmitting component in a top view, so that when the light-transmitting component is placed on the light-emitting element, the wiring extension portion can be used as a mark for placement. Thereby, it becomes easy to place the light-transmitting component on the light-emitting element. When the first wiring 12 does not have the wiring extension portion 123 extending in the X direction, the contact area between the substrate and the reflective member in the X direction can be increased. In this way, the bonding strength between the substrate and the reflective member can be improved. In addition, when the first wiring 12 does not have the wiring extension portion 123 extending in the X direction, the conductive connecting member does not spread onto the wiring extension portion 123 extending in the X direction. In this way, since the spread area of the conductive connecting member can be reduced, it is easy to control the shape of the conductive connecting member.

As shown in FIG. 7A , the first wiring 12 may also have a wiring extension portion extending in the Y direction, and as shown in FIG. 7B , the first wiring 12 may not have a wiring extension portion extending in the Y direction. If the first wiring 12 has a wiring extension portion extending in the Y direction, the wiring extension portion can be used as a mark, thereby improving the position accuracy of the light-emitting element in the Y direction when it is placed on the substrate. If the first wiring 12 does not have a wiring extension portion extending in the Y direction, the contact area between the substrate and the reflective component in the Y direction can be increased, thereby improving the bonding strength between the substrate and the reflective component. Furthermore, if the first wiring does not have a wiring extension portion extending in the Y direction, the conductive connecting component can be prevented from spreading onto the wiring extension portion extending in the Y direction. In this way, since the spreading area of the conductive connecting component can be reduced, it is easy to control the shape of the conductive connecting component.

If there is no wiring extension portion extending in the Y direction, the length L2 of the first wiring in the Y direction is preferably not less than 0.3 times and not more than 0.9 times the length L1 of the substrate in the Y direction. If the length L2 of the first wiring in the Y direction is not less than 0.3 times the length L1 of the substrate in the Y direction, the area of the first wiring increases, so it is easy to carry the light-emitting element. If the length L2 of the first wiring in the Y direction is not more than 0.9 times the length L1 of the substrate in the Y direction, the contact area between the substrate and the reflective component can be increased. In addition, if the length L2 of the first wiring in the Y direction is not more than 0.9 times the length L1 of the substrate in the Y direction, the area of the conductive connecting component that penetrates onto the first wiring can be reduced. When there is a wiring extension portion extending in the Y direction, the length of the first wiring 12 in the Y direction other than the wiring extension portion extending in the Y direction is preferably not less than 0.3 times and not more than 0.9 times the length of the substrate in the Y direction.

The light-emitting device 1000 may also include a translucent member 30 covering the light-emitting element 20. Since the light-emitting element is covered by the translucent member, the light-emitting element 20 can be protected from external stress. The translucent member 30 may also cover the light-emitting element 20 via the light-guiding member 50. The light-guiding member 50 may be located only between the light extraction surface 201 of the light-emitting element and the translucent member 30 to fix the light-emitting element 20 and the translucent member 30, or may cover from the light extraction surface 201 of the light-emitting element to the side surface 202 of the light-emitting element to fix the light-emitting element 20 and the translucent member 30. The light transmittance of the light-guiding member 50 from the light-emitting element 20 is higher than that of the first reflective member 40. Therefore, since the light guide member 50 covers the side surface 202 of the light emitting element, the light emitted from the side surface of the light emitting element 20 can easily pass through the light guide member 50 and be taken out to the outside of the light emitting device, thereby improving the light extraction efficiency.

When the light-emitting device has a light-transmitting member 30, it is preferred that the side surface of the light-transmitting member is covered by the first reflective member 40. Thereby, the contrast between the light-emitting area and the non-light-emitting area is high, and a light-emitting device with good "boundary property" can be obtained.

The light-transmitting component 30 may also contain wavelength conversion particles 32. The wavelength conversion particles 32 are components that absorb at least a portion of the primary light emitted by the light-emitting element 20 and emit secondary light of a different wavelength from the primary light. By making the light-transmitting component 30 contain wavelength conversion particles 32, mixed light can be outputted by mixing the primary light emitted by the light-emitting element 20 and the secondary light emitted by the wavelength conversion particles 32. For example, if a blue LED is used for the light-emitting element 20 and a fluorescent body such as YAG is used for the wavelength conversion particles 32, a light-emitting device that outputs white light obtained by mixing the blue light of the blue LED and the yellow light excited by the blue light and emitted by the fluorescent body can be constructed.

The wavelength conversion particles can be uniformly dispersed in the light-transmitting member, or the wavelength conversion particles can be distributed more locally near the light-emitting element than the upper surface of the light-transmitting member 30. By distributing the wavelength conversion particles more locally near the light-emitting element than the upper surface of the light-transmitting member 30, even if the wavelength conversion particles 32 that are not water-resistant are used, the base material 31 of the light-transmitting member 30 also functions as a protective layer, thereby suppressing the degradation of the wavelength conversion particles 32. In addition, as shown in FIG. 2A, the light-transmitting member 30 can also have a layer containing the wavelength conversion particles 32 and a layer 33 that does not substantially contain the wavelength conversion particles. In the Z direction, the layer 33 that does not substantially contain the wavelength conversion particles is located above the layer containing the wavelength conversion particles 32. Thus, since the layer 33 substantially free of wavelength conversion particles also functions as a protective layer, the wavelength conversion particles 32 can be inhibited from deteriorating. As the wavelength conversion particles 32 that are not water-resistant, for example, manganese-activated fluoride phosphors are cited. Manganese-activated fluoride phosphors are preferred components from the perspective of color reproducibility of luminescence with a narrow spectral line width. The so-called "substantially free of wavelength conversion particles" means that the wavelength conversion particles that are inevitably mixed in are not excluded, and the content of the wavelength conversion particles is preferably 0.05% by weight or less.

The first reflective member 40 covers the side surface of the light emitting element 20 and the front surface of the substrate. The first reflective member 40 can reflect the light that travels from the light emitting element 20 in the X direction and/or the Y direction by covering the side surface of the light emitting element, and increase the light that travels in the Z direction.

5, it is preferred that the side surface 405 of the first reflective member 40 in the short direction and the side surface 105 of the substrate 10 in the short direction are substantially on the same plane. Thus, the width in the first direction (X direction) can be shortened, so that the light emitting device can be miniaturized.

As shown in FIG8 , it is preferred that the side surface 403 of the first reflective member 40 located on the bottom surface 113 side is tilted toward the inside of the light emitting device 1000 in the Z direction. Thus, when the light emitting device 1000 is mounted on the mounting substrate, the contact between the side surface 403 of the first reflective member 40 and the mounting substrate is suppressed, and the mounting posture of the light emitting device 1000 is easily stabilized. It is preferred that the side surface 404 of the first reflective member 40 located on the top surface 114 side is tilted toward the inside of the light emitting device 1000 in the Z direction. Thereby, the side surface of the first reflective member 40 can be prevented from contacting the adsorption nozzle (chuck), and the first reflective member 40 can be prevented from being damaged when the light-emitting device 1000 is adsorbed. Thus, it is preferred that the side surface 403 in the long-side direction of the first reflective member 40 located on the bottom surface 113 side and the side surface 404 in the long-side direction of the first reflective member 40 located on the upper surface 114 side are tilted from the back side to the front direction (Z direction) toward the inner side of the light-emitting device 1000. The tilt angle θ of the first reflective member 40 can be appropriately selected, but from the viewpoint of the ease of achieving such an effect and the strength of the first reflective member 40, it is preferably 0.3° to 3°, more preferably 0.5° to 2°, and even more preferably 0.7° to 1.5°. Furthermore, the right side and the left side of the light emitting device 1000 are preferably set to be substantially the same shape. Thereby, the light emitting device 1000 can be miniaturized.

<Implementation Form 2> The light-emitting device 2000 of implementation form 2 of the present invention shown in FIGS. 9A to 12 is different from the light-emitting device 1000 of implementation form 1 in the number of light-emitting devices mounted on the substrate, the number of recesses and vias provided on the substrate, and the provision of an insulating film.

As shown in FIG10, since the via 15 is connected to the first wiring 12, the second wiring 13, and the third wiring 14, the heat dissipation of the light-emitting device 2000 can be improved. The third wiring 14 located in one recess can also be connected to one via 15, and the third wiring 14 located in one recess can also be connected to a plurality of vias 15. By connecting the third wiring 14 to a plurality of vias 15, the heat dissipation of the light-emitting device is further improved. As shown in FIG11, when there are two vias connected to the third wiring 14 located in one recess, one via and the other via can also be located in a left-right symmetrical position relative to the center line 11C of the recess parallel to the second direction (Y direction).

As shown in FIG. 10 , the light-emitting device 2000 may also include a first light-emitting element 20A and a second light-emitting element 20B. The peak emission wavelength of the first light-emitting element 20A and the peak emission wavelength of the second light-emitting element 20B may be the same or different. If the peak emission wavelength of the first light-emitting element 20A and the peak emission wavelength of the second light-emitting element 20B are different, it is preferred that the peak emission wavelength of the first light-emitting element 20A is within a range of 430 nm to 490 nm (a wavelength range in the blue region), and the peak emission wavelength of the second light-emitting element 20B is within a range of 490 nm to 570 nm (a wavelength range in the green region). In this way, the color rendering of the light-emitting device can be improved.

If the light emitting device has a plurality of light emitting elements (the first light emitting element 20A and the second light emitting element 20B), the plurality of light emitting elements are preferably arranged side by side in the first direction (X direction). Thus, the width of the light emitting device 2000 in the second direction (Y direction) can be shortened, so that the light emitting device can be made thinner.

As shown in FIG10 , the first light-emitting element 20A and the second light-emitting element 20B can be covered by a translucent member 30. As shown in the light-emitting device 2000A in FIG12A and FIG12B , the first light-emitting element 20A and the second light-emitting element 20B can also be covered by different translucent members. By covering the first light-emitting element 20A and the second light-emitting element 20B by a translucent member 30, the size of the translucent member 30 can be increased, so the light extraction efficiency of the light-emitting device is improved. By covering the first light-emitting element 20A and the second light-emitting element 20B by different translucent members, a first reflective member can be formed between one translucent member and another translucent member. In this way, a light-emitting device with good "boundary properties" can be provided.

As shown in FIG. 12C , in the light-emitting device 2000B, the light-transmitting member 30 may also include a first wavelength conversion layer 31E facing the light extraction surface of the light-emitting device, and a second wavelength conversion layer 31F disposed on the first wavelength conversion layer 31E. The first wavelength conversion layer 31E includes a base material 312E and first wavelength conversion particles 311E. The second wavelength conversion layer 31F includes a base material 312F and second wavelength conversion particles 311F. It is preferred that the peak wavelength of light from the first wavelength conversion particles 311E excited by the light-emitting element is shorter than the peak wavelength of light from the second wavelength conversion particles 311F excited by the light-emitting element. Since the peak wavelength of the light from the first wavelength conversion particle 311E excited by the light emitting element is shorter than the peak wavelength of the light from the second wavelength conversion particle 311F excited by the light emitting element, the second wavelength conversion particle 311F can be excited by the light from the first wavelength conversion particle 311E excited by the light emitting element. In this way, the light from the excited second wavelength conversion particle 311F can be increased. Since the second wavelength conversion layer 31F is disposed on the first wavelength conversion layer 31E, the light from the first wavelength conversion particle 311E excited by the light emitting element is easily emitted toward the second wavelength conversion particle 311F.

It is preferred that the peak wavelength of the light from the first wavelength conversion particle 311E excited by the light-emitting element is 500 nm to 570 nm, and the peak wavelength of the light from the second wavelength conversion particle 311F excited by the light-emitting element is 610 nm to 750 nm. In this way, a light-emitting device with higher color rendering can be provided. For example, as the first wavelength conversion particle, a β-sialon-based phosphor is exemplified, and as the second wavelength conversion particle, a manganese-activated potassium fluorosilicate phosphor is exemplified. When a manganese-activated potassium fluorosilicate phosphor is used as the second wavelength conversion particle, it is particularly preferred that the light-transmitting component 30 has a first wavelength conversion layer 31E and a second wavelength conversion layer 31F. The manganese-activated fluoride phosphor, i.e., the second wavelength conversion particle, is prone to brightness saturation, but by placing the first wavelength conversion layer 31E between the second wavelength conversion layer 31F and the light-emitting element, it is possible to prevent the light from the light-emitting element from being excessively irradiated on the second wavelength conversion particle. In this way, it is possible to prevent the manganese-activated fluoride phosphor, i.e., the second wavelength conversion particle, from being degraded. In addition, when the first wavelength conversion particle and the second wavelength conversion particle are included in the same wavelength conversion layer, it is preferred that the second wavelength conversion particle be dispersed throughout the wavelength conversion layer, and the first wavelength conversion particle be distributed on the light extraction surface side of the light-emitting element. For example, the first wavelength conversion particles and the second wavelength conversion particles may be mixed on the light extraction surface side of the wavelength conversion layer of the light emitting element, and only the second wavelength conversion particles may be located on the opposite side of the wavelength conversion layer of the light emitting element. If the second wavelength conversion particles are dispersed throughout the wavelength conversion layer and the first wavelength conversion particles are distributed on the light extraction surface side of the light emitting element, since most of the first wavelength conversion particles are located closer to the light extraction surface side of the light emitting element than the second wavelength conversion particles, the second wavelength conversion particles 311F are easily excited by the light from the first wavelength conversion particles 311E excited by the light emitting element. In this way, the light from the excited second wavelength conversion particles 311F can be increased. Furthermore, when a manganese-activated potassium fluorosilicate phosphor is used as the second wavelength conversion particle, it is possible to prevent the light from the light-emitting element from excessively irradiating the second wavelength conversion particle via the first wavelength conversion particle. This can prevent the manganese-activated fluoride phosphor, i.e., the second wavelength conversion particle, from deteriorating.

The light-transmitting member 30 may contain only one wavelength conversion particle that emits green light, or may contain multiple kinds. Also, it may contain only one wavelength conversion particle that emits red light, or may contain multiple kinds. For example, as a wavelength conversion particle whose peak wavelength of light from the wavelength conversion particle excited by the light-emitting element is 610 nm or more and 750 nm or less, the light-transmitting member 30 may contain a CASN-based phosphor or a manganese-activated potassium fluorosilicate phosphor (e.g., K ₂ SiF ₆ :Mn). Generally speaking, the CASN-based phosphor has a shorter afterglow time, which is the time from when the excitation light stops to when the wavelength conversion particle stops emitting light, than the manganese-activated potassium fluorosilicate phosphor. Therefore, since the light-transmitting member contains a CASN-based phosphor and a manganese-activated potassium fluorosilicate phosphor, the afterglow time can be shortened compared to the case where the light-transmitting member contains only a manganese-activated potassium fluorosilicate phosphor. In addition, generally speaking, manganese-activated potassium fluorosilicate has a luminescence peak with a narrower half-width than that of a CASN-based phosphor, so the color purity becomes higher and the color reproducibility becomes better. Therefore, since the light-transmitting member contains a CASN-based phosphor and a manganese-activated potassium fluorosilicate phosphor, the color reproducibility is better than the case where the light-transmitting member contains only a CASN-based phosphor.

For example, the weight of the manganese-activated potassium fluorosilicate phosphor contained in the light-transmitting member is preferably 0.5 to 6 times the weight of the CASN-based phosphor, more preferably 1 to 5 times, and even more preferably 2 to 4 times. By increasing the weight of the manganese-activated potassium fluorosilicate phosphor, the color reproducibility of the light-emitting device becomes better. By increasing the weight of the CASN-based phosphor, the afterglow time can be shortened.

The average particle size of the manganese-activated potassium fluorosilicate phosphor is preferably 5 μm to 30 μm. In addition, the average particle size of the CASN phosphor is preferably 5 μm to 30 μm. When the concentration of the wavelength conversion particles contained in the light-transmitting component is the same, if the particle size of the wavelength conversion particles is smaller, the light from the light-emitting element is easy to diffuse in the wavelength conversion particles, so the uneven color distribution of the light-emitting device can be suppressed. In addition, when the concentration of the wavelength conversion particles contained in the light-transmitting component is the same, if the particle size of the wavelength conversion particles is larger, it is easy to extract the light from the light-emitting element, so the light extraction efficiency of the light-emitting device is improved.

CASN series phosphors and manganese-activated potassium fluorosilicate phosphors can be contained in the same wavelength conversion layer of the light-transmitting member, or in different wavelength conversion layers when the light-transmitting member has a plurality of wavelength conversion layers. When manganese-activated potassium fluorosilicate phosphors and CASN series phosphors are contained in different wavelength conversion layers, it is preferred that wavelength conversion particles with shorter peak wavelengths of light in manganese-activated potassium fluorosilicate phosphors and CASN series phosphors are located near the light-emitting element. In this way, wavelength conversion particles with longer peak wavelengths of light can be excited by light from wavelength conversion particles with shorter peak wavelengths of light. For example, when the peak wavelength of light from a manganese-activated potassium fluorosilicate phosphor is around 631 nm and the peak wavelength of light from a CASN phosphor is around 650 nm, it is preferred that the manganese-activated potassium fluorosilicate phosphor is closer to the light-emitting element.

The light-transmitting member may also contain SCASN-based phosphors and manganese-activated potassium fluorosilicate phosphors. Even if the light-transmitting member contains SCASN-based phosphors, the afterglow time can be shortened. Furthermore, the light-transmitting member may also contain CASN-based phosphors, manganese-activated potassium fluorosilicate phosphors, and β-sialon-based phosphors. Thereby, the color reproducibility of the light-emitting device becomes good.

As shown in FIG12C , the light emitting device 2000B may also include a via 15A connected to the first wiring, the second wiring, and the third wiring, and a via 15B connected to the first wiring and the second wiring but separated from the third wiring. As shown in FIG12D , in a rear view, the via 15A overlaps with the second wiring 13 and the third wiring 14, and the via 15B overlaps with the second wiring 13 but does not overlap with the third wiring.

As shown in FIG12C , the light-guiding member 50 may or may not cover the side surface of the light-transmitting member 30. When the light-transmitting member 30 includes a first wavelength conversion layer 31E facing the light extraction surface of the light-emitting element, a second wavelength conversion layer 31F disposed on the first wavelength conversion layer 31E, and a layer 33 substantially free of wavelength conversion particles disposed on the second wavelength conversion layer 31, the side surface of the first wavelength conversion layer 31E may be covered by the light-guiding member 50, and the side surface of the second wavelength conversion layer 31F and the side surface of the layer 33 substantially free of wavelength conversion particles may be exposed from the light-guiding member 50, as in the light-emitting device 2000C shown in FIG12E . Alternatively, as in the light emitting device 2000D shown in FIG12F , the side surfaces of the first wavelength conversion layer 31E and the side surfaces of the second wavelength conversion layer 31F may be covered by the light guiding member 50, and the side surfaces of the layer 33 substantially free of wavelength conversion particles may be exposed from the light guiding member 50. Alternatively, as in the light emitting device 2000E shown in FIG12G , the side surfaces of the first wavelength conversion layer 31E, the side surfaces of the second wavelength conversion layer 31F, and the side surfaces of the layer 33 substantially free of wavelength conversion particles may be covered by the light guiding member 50. As shown in FIG12G, when the light-guiding member 50 covers the side surface of the first wavelength conversion layer 31E, the side surface of the second wavelength conversion layer 31F, and the side surface of the layer 33 substantially free of wavelength conversion particles, the light-guiding member 50 may also be exposed from the first reflective member 40. By covering at least a portion of the side surface of the light-transmitting member with the light-guiding member, the light extraction efficiency of the light-emitting device can be improved. As shown in FIG12H, in the light-emitting device 2000F, when the side surface of the light-transmitting member 30 has a concave-convex shape, by covering the concave-convex shape located on the side surface of the light-transmitting member 30 with the light-guiding member 50, the light extraction efficiency of the light-emitting device can be improved.

As shown in FIG12I , in the light-emitting device 2000G, the layer 33 substantially free of wavelength conversion particles preferably includes a layer 33A containing reflective particles and a layer 33B substantially free of reflective particles. Since the layer 33A containing reflective particles is located on the first wavelength conversion layer and/or the second wavelength conversion layer, the light from the light-emitting element will diffuse in the light-transmitting component through the layer 33A containing reflective particles. In this way, the light from the first wavelength conversion particles and/or the second wavelength conversion particles excited by the light of the light-emitting element can be increased. In addition, since the layer 33B substantially free of reflective particles is arranged on the layer 33A containing reflective particles, the layer 33B substantially free of reflective particles can function as a protective layer for the layer 33A containing reflective particles. Furthermore, when the upper surface of the light-transmitting component 30 is ground for the purpose of thinning the light-emitting device, since the layer 33B substantially free of reflective particles is disposed on the layer 33A containing reflective particles, only the layer 33B substantially free of reflective particles can be cut. Thus, since the layer 33A containing reflective particles is not ground, the uneven amount of reflective particles contained in the light-transmitting component can be suppressed. If the layer 33 substantially free of wavelength conversion particles has only one layer containing reflective particles, it is preferred that the reflective particles are distributed on the light extraction surface side of the light-emitting element. Thus, the base material of the layer 33 substantially free of wavelength conversion particles can function as a protective layer. Examples of reflective particles include titanium oxide, zirconium oxide, aluminum oxide, silicon oxide, and the like. The reflective particles are preferably titanium oxide, which has a particularly high refractive index. The content of the reflective particles in the layer substantially free of wavelength conversion particles can be appropriately selected, but is preferably, for example, 0.05 wt% or more and 0.1 wt% or less from the viewpoint of light reflectivity and viscosity in a liquid state.

As shown in the light-emitting device 2000H of FIG. 12J , when the light-transmitting component contains wavelength conversion particles, it may also have a coating 34 covering the upper surface of the light-transmitting component 30. The so-called coating 34 refers to nanoparticles, i.e., an aggregate of coating particles. In addition, the coating not only includes coating particles, but may also include coating particles and resin materials. The refractive index of the coating is different from the refractive index of the parent material of the light-transmitting component located on the outermost surface, thereby correcting the luminous chromaticity of the light-emitting device. The so-called parent material of the light-transmitting component located on the outermost surface refers to the parent material of the layer of the light-emitting element in the light-transmitting component that is opposite to the surface of the light extraction side. For example, when the refractive index of the film 34 is greater than the refractive index of the parent material of the translucent component located at the outermost surface, the reflected light component at the interface between the film and the air is larger than the reflected light component at the interface between the parent material of the translucent component located at the outermost surface and the air. Therefore, the reflected light component returning to the translucent component can be increased, so it is easy to excite the wavelength conversion particles. Thereby, the luminous chromaticity of the light-emitting device can be corrected to the long-wavelength side. In addition, when the refractive index of the film 34 is less than the refractive index of the parent material of the translucent component located at the outermost surface, the reflected light component at the interface between the film and the air is reduced compared to the reflected light component at the interface between the parent material of the translucent component and the air. Thereby, the reflected light component returning to the translucent component can be reduced, so it is not easy to excite the wavelength conversion particles. Thereby, the chromaticity of the light-emitting device can be corrected to the short-wavelength side. For example, when a benzene silicone resin is used as the base material of the light-transmitting component located on the outermost surface, titanium oxide, aluminum oxide, etc. are listed as the coating particles that correct the chromaticity of the light-emitting device to the long-wavelength side. When a benzene silicone resin is used as the base material of the light-transmitting component located on the outermost surface, silicon oxide, etc. are listed as the coating particles that correct the chromaticity of the light-emitting device to the short-wavelength side. When the light-emitting device has a plurality of light-transmitting components, the upper surface of one light-transmitting component may be coated with a film, while the upper surface of another light-transmitting component may not be coated with a film. Whether to form a film covering the upper surface of the light-transmitting component can be appropriately selected in accordance with the correction of the chromaticity of the light-emitting device. Furthermore, when the light-emitting device has a plurality of light-transmitting components, the upper surface of one light-transmitting component can be coated with a coating having a refractive index greater than the refractive index of the base material of the light-transmitting component located on the outermost surface, and the upper surface of another light-transmitting component can be coated with a coating having a refractive index less than the refractive index of the base material of the light-transmitting component located on the outermost surface. The material of the coating coating the light-transmitting component can be appropriately selected in accordance with the correction of the luminous chromaticity of the light-emitting device. The coating can be formed by a well-known method such as pouring with a dispenser, spraying with an inkjet or a spray.

As shown in FIG. 12K , the first wiring 12 preferably has a narrow portion with a shorter length in the Y direction and a wide portion with a longer length in the Y direction when viewed from the front. The length D4 of the narrow portion in the Y direction is shorter than the length D5 of the wide portion in the Y direction. The narrow portion moves away from the center of the via 15 in the X direction when viewed from the front, and is located at the portion where the electrode of the light-emitting element is located in the X direction. The wide portion is located at the center of the via 15 when viewed from the front. By having the first wiring 12 with a wide portion, the area of the conductive connecting member that electrically connects the electrode of the light-emitting element and the first wiring and spreads on the first wiring can be reduced. Thereby, the shape of the conductive connecting member can be easily controlled. In addition, the periphery of the first wiring may also be rounded.

As shown in Fig. 10, the light guide member 50 may also continuously cover the light extraction surface 201A of the first light emitting element 20A, the side surface 202A of the first light emitting element 20A, the light extraction surface 201B of the second light emitting element 20B, and the side surface 202B of the second light emitting element 20B. Thus, the light of the first light emitting element 20A and/or the second light emitting element 20B can be extracted between the light extraction surface 201A of the first light emitting element 20A and the light extraction surface 201B of the second light emitting element 20B, so that the brightness unevenness of the light emitting device can be suppressed. Furthermore, when the peak emission wavelength of the first light emitting element 20A is different from the peak emission wavelength of the second light emitting element 20B, the light from the first light emitting element 20A and the light from the second light emitting element 20B can be mixed in the light guiding member 50, thereby suppressing the color deviation of the light emitting device.

The light emitting device may also include an insulating film 18 covering a portion of the second wiring 13. By including the insulating film 18, it is possible to ensure insulation and prevent short circuits in retrospect. In addition, it is possible to prevent the second wiring from peeling off from the substrate.

<Implementation Form 3> The light-emitting device 3000 of implementation form 3 of the present invention shown in FIGS. 13A to 18B is different from the light-emitting device 2000 of implementation form 2 in the number of light-emitting devices mounted on the substrate, the number of recesses and conducting holes provided on the substrate, the shape of the substrate, the shape of the recess, the composition of the light-transmitting member, and the second reflective member and the third reflective member.

As shown in Fig. 14A, since the via hole 15 is connected to the first wiring 12, the second wiring 13 and the third wiring 14, the heat dissipation of the light emitting device 3000 can be improved. The number of recesses and via holes provided in the substrate can be appropriately changed according to the size of the substrate.

As shown in FIG. 14A , the substrate 11 may also have a recess 111A on the front surface 111. By having the recess 111A on the substrate 11, the contact area between the first reflective component and the substrate 11 can be increased. Thereby, the bonding strength between the first reflective component and the substrate can be improved. The recess 111A is preferably located at both ends of the long side direction (X direction) of the front surface 111. Thereby, the bonding strength between the substrate and the first reflective component can be improved at both ends of the substrate, so that the first reflective component and the substrate can be prevented from peeling off.

As shown in Figures 15 and 16, the substrate 10 may have: a central recess 16A, which opens on the back and bottom surfaces of the substrate and is separated from the side surface 105 of the substrate; and an end recess 16B, which opens on the back, bottom and side surfaces 105 of the substrate. The side surface 105 of the substrate is located between the front and back surfaces of the substrate. Since the substrate 10 has the end recess 16B, the bonding strength with the mounting substrate at the end of the light-emitting device can be improved. When there are multiple end recesses 16B, it is preferred that the end recesses are located at both ends of the substrate in a rear view. Thereby, the bonding strength of the mounting substrate of the light-emitting device is improved. The substrate 10 may also have only one of the central recess 16A or the end recess 16B. In addition, in this specification, the so-called recess refers to the central recess and/or the end recess. As shown in FIG. 15 , there are a plurality of via holes 15 , and in a rear view, there may be a via hole overlapping with the central recess 16A and a via hole overlapping with the end recess 16B.

As shown in FIG14A, the light-emitting device 3000 may also include a first light-emitting element 20A, a second light-emitting element 20B and a third light-emitting element 20C. In addition, the light-emitting device may also include more than four light-emitting elements. In this specification, the so-called light-emitting element refers to the first light-emitting element 20A, the second light-emitting element 20B and/or the third light-emitting element 20C. As shown in FIG17A, it is preferred that the first light-emitting element 20A, the second light-emitting element 20B and the third light-emitting element 20C are arranged side by side in the long side direction (X direction) when viewed from the front. Thereby, the light-emitting device can be thinned in the Y direction. When the light extraction surfaces of the first light-emitting element and the second light-emitting element are rectangular, it is preferred that the short side 2011A of the light extraction surface of the first light-emitting element is opposite to the short side 2011B of the light extraction surface of the second light-emitting element. When the light extraction surfaces of the second light emitting element and the third light emitting element are rectangular, it is preferred that the short side 2012B of the light extraction surface of the second light emitting element and the short side 2011C of the light extraction surface of the third light emitting element are opposite. In this way, the light emitting device can be thinned in the Y direction. The rectangle in this specification means a quadrilateral with two long sides and two short sides and four right angles. In addition, the right angle in this specification means 90±3°.

The peak emission wavelength of the first light-emitting element 20A, the peak emission wavelength of the second light-emitting element 20B, and the peak emission wavelength of the third light-emitting element 20C may be the same or different. Since the peak emission wavelength of the first light-emitting element 20A, the peak emission wavelength of the second light-emitting element 20B, and the peak emission wavelength of the third light-emitting element 20C are different, a light-emitting device with higher color rendering index may be provided. When the first light-emitting element 20A, the second light-emitting element 20B, and the third light-emitting element 20C are arranged in sequence, the peak emission wavelength of the first light-emitting element 20A may be the same as the peak emission wavelength of the third light-emitting element 20C, and the peak emission wavelength of the second light-emitting element 20B may be different from the peak emission wavelength of the first light-emitting element 20A. Thus, for example, if the output of the first light-emitting element 20A is insufficient, the third light-emitting element 20C can make up for it. In addition, since the second light-emitting element 20B having a different peak emission wavelength from the first light-emitting element 20A and the third light-emitting element 20C is located between the first light-emitting element 20A and the third light-emitting element 20C, the color rendering of the light-emitting device is higher and the color deviation can be reduced. In addition, in this specification, the same as the peak emission wavelength means that a variation of about ±10 nm is allowed. When the peak wavelength of the light emission of the first light emitting element 20A is within the range of 430 nm to 490 nm (wavelength range of the blue region), it is preferred that the peak wavelength of the light emission of the third light emitting element 20C is within the range of 430 nm to 490 nm. Thus, by selecting a wavelength conversion particle having a peak wavelength with excitation efficiency within the range of 430 nm to 490 nm, the excitation efficiency of the wavelength conversion particle can be improved.

As shown in FIG. 14A , the light extraction surface 201A of the first light emitting element 20A and the light extraction surface 201B of the second light emitting element 20B may be located at approximately the same height in the Z direction, or the light extraction surface 201A of the first light emitting element 20A and the light extraction surface 201B of the second light emitting element 20B may be located at different heights in the Z direction. For example, in the light emitting device 3000A shown in FIG. 14B , the light extraction surface 201A of the first light emitting element 20A may be located below the light extraction surface 201B of the second light emitting element 20B in the Z direction. Since the light extraction surface 201A of the first light emitting element 20A is located below the light extraction surface 201B of the second light emitting element 20B in the Z direction, the light from the second light emitting element 20B is easily expanded in the long side direction (X direction). In addition, as shown in the light emitting device 3000B in FIG14C , the light extraction surface 201A of the first light emitting element 20A may be located above the light extraction surface 201B of the second light emitting element 20B in the Z direction. Since the light extraction surface 201A of the first light emitting element 20A is located above the light extraction surface 201B of the second light emitting element 20B in the Z direction, the light from the first light emitting element 20A is easily expanded in the long side direction (X direction).

As shown in FIG. 17A , the lengths of the short side 2011A of the light extraction surface 201A of the first light emitting element 20A and the short side 2011B of the light extraction surface 201B of the second light emitting element 20B may be substantially the same, or the lengths of the short side 2011A of the light extraction surface 201A of the first light emitting element 20A and the short side 2011B of the light extraction surface 201B of the second light emitting element 20B may be different. For example, as shown in FIG. 17B , the length of the short side 2011A of the light extraction surface 201A of the first light emitting element 20A may be longer than the length of the short side 2011B of the light extraction surface 201B of the second light emitting element 20B. Thus, the light from the first light emitting element 20A is easily expanded in the long side direction (X direction). 17C , the length of the short side 2011A of the light extraction surface 201A of the first light emitting element 20A may be shorter than the length of the short side 2011B of the light extraction surface 201B of the second light emitting element 20B. This allows the light from the second light emitting element 20B to spread more easily in the longitudinal direction (X direction).

As shown in FIG. 14A , the light-transmitting component 30 may also include a first light-transmitting layer 31A facing the light extraction surface of the light-emitting device, and a wavelength conversion layer 31B disposed on the first light-transmitting layer 31A. The first light-transmitting layer 31A includes a base material 312A and first diffusion particles 311A. The wavelength conversion layer 31B includes a base material 312B and wavelength conversion particles 32. Since the light-transmitting component 30 includes the first light-transmitting layer 31A facing the light extraction surface of the light-emitting element, the light from the first light-emitting element and the second light-emitting element is diffused through the first light-transmitting layer 31A. Thus, since the light from the first light emitting element, the second light emitting element and/or the third light emitting element can be mixed in the first light-transmitting layer 31A, the brightness unevenness of the light emitting device can be reduced. When the first light emitting element, the second light emitting element and/or the third light emitting element have different peak emission wavelengths, since the light from the first light emitting element, the second light emitting element and/or the third light emitting element can be mixed in the first light-transmitting layer 31A, the color deviation of the light emitting device can be reduced.

The first light-transmitting layer 31A is preferably substantially free of wavelength conversion particles. When the wavelength conversion particles are excited by the light of the light-emitting element, a portion of the light from the light-emitting element is absorbed. Since the first light-transmitting layer 31A is located between the light extraction surface of the light-emitting element and the wavelength conversion layer, the light of the first light-emitting element, the second light-emitting element and/or the third light-emitting element can be mixed in the first light-transmitting layer 31A before the light of the light-emitting element is absorbed by the wavelength conversion particles. In this way, the light extraction efficiency of the light-emitting device can be suppressed from decreasing.

As shown in FIG14A , the second light-transmitting layer 31C may also be located on the wavelength conversion layer 31B. The second light-transmitting layer 31C is a layer that does not substantially contain wavelength conversion particles. The second light-transmitting layer 31C may also include a base material 312C and second diffusion particles 311C. Since the second light-transmitting layer 31C includes the second diffusion particles 311C, light from the light-emitting element and light from the wavelength conversion particles excited by the light-emitting element may be mixed in the second light-transmitting layer. In this way, the color deviation of the light-emitting device may be reduced. For example, the second diffusion particles may be a material having a lower refractive index than the first diffusion particles. In this way, the light diffused by the second diffusion particles is reduced, so the light extraction efficiency of the light-emitting device is improved. As a material of the second diffusion particles having a refractive index lower than that of the first diffusion particles, the first diffusion particles may be titanium oxide and the second diffusion particles may be silicon oxide.

As shown in FIG14A, a second reflective member 41 may be provided to cover the electrode forming surface 203A of the first light-emitting element 20A, the electrode forming surface 203B of the second light-emitting element 20B and/or the electrode forming surface 203C of the third light-emitting element 20C. By providing the light-emitting device with the second reflective member 41, it is possible to suppress the light from the light-emitting element from being absorbed by the substrate 10. Furthermore, as shown in FIG2A, FIG10, and FIG12B, the electrode forming surface of the light-emitting element may be covered by the first reflective member. In this way, it is possible to suppress the light from the light-emitting element from being absorbed by the substrate. Furthermore, the second reflective member 41 preferably has an inclined portion in which the thickness in the Z direction becomes thicker as it is farther away from the light-emitting element. By providing the second reflective member 41 with the inclined portion, the light extraction efficiency of the light-emitting device is improved.

As shown in FIG. 14A , a third reflective member 42 may be provided between the light-guiding member 50 and the first reflective member. The third reflective member 42 covers the side surface of the light-emitting element via the light-guiding member. By forming the light-guiding member 50 by injection or the like after forming the third reflective member 42, the shape unevenness of the light-guiding member 50 can be suppressed. The surface of the third reflective member 42 opposite to the light-transmitting member 30 is preferably flat. Thereby, the light-transmitting member 30 is easily formed after the third reflective member 42 is formed. In addition, when the light-emitting device has the third reflective member 42, the first reflective member covers the first element side surface and the second element side surface via the third reflective member and the light-guiding member.

The light-emitting device 3000C shown in FIG18A may also include a covering member that covers the light extraction surface of the light-emitting element. When the covering member 31D includes diffusion particles 311D, the covering member 31D that covers the light extraction surface can reduce the light from the light-emitting element that advances in the Z direction and increase the light that advances in the X direction and/or the Y direction. In this way, the light from the light-emitting element can be diffused in the light-guiding member, so that the uneven brightness of the light-emitting device can be suppressed. In addition, the covering member 31D is located between the light extraction surface of the light-emitting element and the light-guiding member 50. The first covering member 31D including the diffusion particles 311D preferably exposes at least a portion of the side surface of the light-emitting element, thereby suppressing the reduction of the light from the light-emitting element that advances in the X direction and/or the Y direction. The covering member 31D may cover the light extraction surfaces of the first light emitting element, the second light emitting element, and the third light emitting element, or may cover only one of the light extraction surfaces of the first light emitting element, the second light emitting element, or the third light emitting element.

The coating member 31D may also include wavelength conversion particles. By having a coating member 31D that covers the light extraction surface of the light-emitting element and includes wavelength conversion particles, the color adjustment of the light-emitting device becomes easy. In addition, the wavelength conversion particles contained in the coating member 31D may be the same as or different from the wavelength conversion particles contained in the wavelength conversion layer. For example, when the peak wavelength of the light emitted by the light-emitting element is in the range of below 490 nm and below 570 nm (the wavelength range of the green region), the wavelength conversion particles are preferably CASN-based phosphors and/or SCASN-based phosphors that are excited by light in the range of above 490 nm and below 570 nm. In addition, as the wavelength conversion particles, a phosphor of (Sr,Ca)LiAl ₃ N ₄ :Eu may also be used.

As shown in Fig. 18A, one covering member 31D covers the light extraction surface of one light emitting element, or as shown in Fig. 18B, a plurality of covering members 31D cover the light extraction surface of one light emitting element. As shown in Fig. 18B, by partially exposing the light extraction surface from the covering member 31D, the light extraction efficiency of the light emitting element is improved.

<Implementation Form 4> The light-emitting device 4000 of the implementation form 4 of the present invention shown in FIG. 19 is different from the light-emitting device 2000 of the implementation form 2 in the structure of the light-transmitting member.

The light-transmitting component 30 of the light-emitting device 4000 includes a first light-transmitting component 30A covering the first light-emitting element 20A, and a second light-transmitting component 30B covering the second light-emitting element 20B. The first light-transmitting component 30A and the second light-transmitting component 30B have different constituent components and/or different contents of constituent components. For example, the types of wavelength conversion particles and/or the contents of wavelength conversion particles contained in the first light-transmitting component 30A and the second light-transmitting component 30B are different. Thereby, the color adjustment of the light-emitting device becomes easy. As shown in FIG. 19 , it is also possible to configure the first light-transmitting component 30A to contain wavelength conversion particles, and the second light-transmitting component 30B to substantially contain no wavelength conversion particles. Thereby, the light extraction efficiency from the second light-emitting element 20B can be improved. For example, the peak emission wavelength of the first light-emitting element 20A may be in the range of 430 nm to 490 nm (the wavelength range of the blue region), the peak emission wavelength of the second light-emitting element 20B may be in the range of 490 nm to 570 nm (the wavelength range of the green region), the first light-transmitting component 30A may contain wavelength conversion particles for green light emission and/or wavelength conversion particles for red light emission, and the second light-transmitting component 30B may not substantially contain wavelength conversion particles. In addition, the first light-transmitting component 30A and the second light-transmitting component 30B may not substantially contain wavelength conversion particles. Furthermore, the peak emission wavelengths of the first light-emitting element 20A and the second light-emitting element may be the same or different.

The following describes the components of a light-emitting device according to an embodiment of the present invention.

(Substrate 10) The substrate 10 is a component on which the light-emitting element is mounted. The substrate 10 is composed of at least a base material 11, a first wiring 12, a second wiring 13, a third wiring 14, and a via 15.

(Substrate 11) The substrate 11 can be formed of insulating members such as resin or fiber-reinforced resin, ceramic, glass, etc. Examples of the resin or fiber-reinforced resin include epoxy, glass epoxy, dimaleimide triazine (BT), polyimide, etc. Examples of the ceramic include aluminum oxide, aluminum nitride, zirconium oxide, zirconium nitride, titanium oxide, titanium nitride, or mixtures thereof. Among these substrates, a substrate having a linear expansion coefficient close to that of the light-emitting element is particularly preferred. The lower limit of the substrate thickness can be appropriately selected, but from the perspective of substrate strength, it is preferably 0.05 mm or more, and more preferably 0.2 mm or more. In addition, from the perspective of the thickness (depth) of the light-emitting device, the upper limit of the substrate thickness is preferably less than 0.5 mm, and more preferably less than 0.4 mm.

(1st wiring 12, 2nd wiring 13, 3rd wiring 14) The 1st wiring is arranged on the front side of the substrate and is electrically connected to the light-emitting element. The 2nd wiring is arranged on the back side of the substrate and is electrically connected to the 1st wiring via a conductive hole. The 3rd wiring covers the inner wall of the recess and is electrically connected to the 2nd wiring. The 1st wiring, the 2nd wiring and the 3rd wiring can be formed of copper, iron, nickel, tungsten, chromium, aluminum, silver, gold, titanium, palladium, rhodium or alloys thereof. Such metals or alloys can be single-layer or multi-layer. In particular, from the perspective of heat dissipation, copper or copper alloy is preferred. Furthermore, from the perspective of wettability and/or light reflectivity of the conductive connecting member, a layer of silver, platinum, aluminum, rhodium, gold, or an alloy thereof may be provided on the surface of the first wiring and/or the second wiring.

(Conductive hole 15) The conductive hole 15 is a component provided in a hole penetrating the front and back sides of the substrate 11 to electrically connect the first wiring and the second wiring mentioned above. The conductive hole 15 can also be composed of a fourth wiring 151 covering the surface of the through hole of the substrate and a filling component 152 filled in the fourth wiring 151. The fourth wiring 151 can use the same conductive component as the first wiring, the second wiring, and the third wiring. For the filling component 152, a conductive component can be used, and an insulating component can also be used.

(Insulating film 18) The insulating film 18 is a component for ensuring the insulation of the back side and preventing short circuit. The insulating film can be formed by any material used in the field. For example, a thermosetting resin or a thermoplastic resin is exemplified.

(Light-emitting element 20) The light-emitting element 20 is a semiconductor element that emits light by applying a voltage, and a known semiconductor element composed of a nitride semiconductor or the like can be applied. As the light-emitting element 20, an LED chip is cited as an example. The light-emitting element 20 has at least a semiconductor multilayer 23, and in most cases further has a substrate 24. The top view shape of the light-emitting element is preferably rectangular, and is particularly preferably square or rectangular that is longer in one direction, but it may also be other shapes, for example, if it is a hexagonal shape, the luminous efficiency can also be improved. The side surface of the light-emitting element may be perpendicular to the upper surface, or may be inclined on the inside or outside. In addition, the light-emitting element has positive and negative electrodes. The positive and negative electrodes can be made of gold, silver, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel or alloys thereof. The peak wavelength of the light-emitting element can be selected from the ultraviolet region to the infrared region according to the semiconductor material and its _mixed crystal ratio. As a semiconductor material, it is preferred to use a material that can emit short-wavelength light that efficiently excites wavelength conversion particles, that is, a nitride semiconductor. Nitride semiconductors are mainly represented by the general formula _{InxAlyGa1 -xyN} (0≦x, 0≦y, x+y≦1). The peak wavelength of light emission of the light-emitting element is preferably between 400 nm and 530 nm, more preferably between 420 nm and 490 nm, and particularly preferably between 450 nm and 470 nm, from the viewpoints of light-emitting efficiency, excitation of wavelength conversion particles, and relationship between light emission and color mixing. In addition, InAlGaAs semiconductors, InAlGaP semiconductors, zinc sulfide, zinc selenide, silicon carbide, etc. may also be used. The element substrate of the light-emitting element is mainly a crystal growth substrate on which semiconductor crystals constituting a semiconductor multilayer body can be grown, but it may also be a bonding substrate bonded to a semiconductor element structure separated from the crystal growth substrate. Since the element substrate has light transmittance, flip-chip mounting is easy to adopt, and the light extraction efficiency is easy to improve. As the base material of the device substrate, sapphire, gallium nitride, aluminum nitride, silicon, silicon dioxide, gallium arsenide, gallium phosphide, indium phosphide, zinc sulfide, zinc oxide, zinc selenide, diamond, etc. are listed. Sapphire is preferred. The thickness of the device substrate can be appropriately selected, for example, from 0.02 mm to 1 mm. From the perspective of the strength of the device substrate and/or the thickness of the light-emitting device, it is preferably from 0.05 mm to 0.3 mm.

(Translucent member 30) The translucent member is a member that is placed on the light-emitting element and protects the light-emitting element. The translucent member is composed of at least the following base material. In addition, the translucent member contains the following wavelength conversion particles 32 in the base material, so that it can function as a wavelength conversion particle. The base materials of each layer of the translucent member are composed as follows. The base materials of each layer can be the same or different. The translucent member does not need to have wavelength conversion particles. In addition, the translucent member can also use a sintered body of wavelength conversion particles and inorganic materials such as aluminum, or a plate-like crystal of wavelength conversion particles.

(Base material 31 of translucent component) The base material 31 of the translucent component only needs to be translucent relative to the light emitted from the light-emitting element. In addition, the so-called "translucent" means that the light transmittance of the peak wavelength of the light-emitting element is preferably 60% or more, more preferably 70% or more, and particularly preferably 80% or more. The base material of the translucent component can be silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin or modified resins thereof. It can also be glass. Among them, silicone resin and modified silicone resin are excellent in heat resistance and light resistance and are preferred. As specific silicone resins, polydimethylsilicone resin, phenyl-methyl silicone resin, and diphenyl silicone resin are cited. The light-transmitting component can be composed of a single layer of one of these base materials, or a layer of two or more of these base materials. In addition, the "modified resin" in this specification includes mixed resins. In addition, the base material of the light-transmitting component also includes the base materials of the first light-transmitting layer, the wavelength conversion layer, and the second light-transmitting layer.

The base material of the light-transmitting component may also contain various diffusion particles in the above-mentioned resin or glass. As the diffusion particles, silicon oxide, aluminum oxide, zirconium oxide, zinc oxide, etc. are listed. The diffusion particles may be used alone or in combination of two or more of them. In particular, silicon oxide having a smaller thermal expansion coefficient is preferred. In addition, nanoparticles are used as the diffusion particles, thereby increasing the scattering of light emitted by the light-emitting element and reducing the amount of wavelength conversion particles used. In addition, nanoparticles refer to particles with a particle size of more than 1 nm and less than 100 nm. In addition, the "particle size" in this specification is defined as D ₅₀ , for example.

(Wavelength conversion particles 32) The wavelength conversion particles absorb at least a portion of the primary light emitted by the light-emitting element and emit secondary light of a different wavelength from the primary light. The wavelength conversion particles can be used alone or in combination of two or more of the specific examples shown below.

Examples of green luminescent wavelength conversion particles include yttrium-aluminum-garnet phosphors (e.g., Y ₃ (Al, Ga) ₅ O ₁₂ : Ce), titanium-aluminum-garnet phosphors (e.g., Lu ₃ (Al, Ga) ₅ O ₁₂ : Ce), zirconium-aluminum-garnet phosphors (e.g., Tb ₃ (Al, Ga) ₅ O ₁₂ : Ce), silicate phosphors (e.g., (Ba, Sr) ₂ SiO ₄ : Eu), chlorosilicate phosphors (e.g., Ca ₈ Mg(SiO ₄ ) ₄ Cl ₂ : Eu), β-sialon phosphors (e.g., Si _6-z Al _z O _z N _8-z ：Eu(0＜z＜4.2)), SGS series phosphors ( _such as _SrGa2S4 :Eu), alkali earth aluminate silicon phosphors (such as (Ba,Sr,Ca) _{MgxAl10O16 +x} :Eu, _Mu (but 0≦x≦1)), etc. As wavelength conversion particles for yellow light emission, α-sialon-based phosphors (e.g., _Mz (Si,Al) ₁₂ (O,N) ₁₆ (where 0＜z≦2, M is Li, Mg, Ca, Y, and rare earth elements other than La and Ce) are cited. In addition, among the wavelength conversion particles for green light emission, there are also wavelength conversion particles for yellow light emission. For example, yttrium-aluminum-garnet-based phosphors can shift the peak wavelength of light emission to the long wavelength side by replacing a portion of Y with Gd, thereby emitting yellow light. Among these, there are also wavelength conversion particles that can emit orange light. As wavelength conversion particles for red light emission, nitrogen-containing calcium aluminosilicate (CASN or SCASN)-based phosphors (e.g., (Sr,Ca) _AlSiN3 ：Eu) etc. In addition, manganese-activated fluoride-based phosphors (phosphors represented by the general formula ₍ I) _A2 [ _M1- aMn _aF6 ] (however, in the above general formula (I), A is at least one selected from the group consisting of K, Li, Na, Rb, Cs and _NH4 , M is at least one selected from the group consisting of Group 4 elements and Group 14 elements, and a satisfies 0＜a＜0.2)) are cited. As a representative example of the manganese-activated fluoride-based phosphor, there is a phosphor of manganese-activated potassium fluorosilicate (for example _{, K2SiF6} :Mn).

(Reflection member (first reflection member, second reflection member and/or third reflection member)) The so-called reflection member refers to the first reflection member, the second reflection member and/or the third reflection member. From the perspective of the light extraction efficiency of the reflection member in the Z direction, the light reflectivity of the peak emission wavelength of the light-emitting element is preferably 70% or more, more preferably 80% or more, and particularly preferably 90% or more. Furthermore, the reflection member is preferably white. Therefore, the reflection member preferably contains a white pigment in the base material. The reflection member is in a liquid state before hardening. The reflection member can be formed by transfer molding, injection molding, compression molding, pouring, etc. When the light-emitting device has a first reflective member, a second reflective member and/or a third reflective member, for example, the third reflective member can be formed by drawing, and the first reflective member and the second reflective member can be formed by pouring.

(Base material of reflective component) The base material of the reflective component can be a resin, for example, silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin or modified resins thereof. Among them, silicone resin and modified silicone resin are better because of their excellent heat resistance and light resistance. As specific silicone resins, polydimethylsilicone resin, phenyl-methyl silicone resin, and diphenyl silicone resin are exemplified.

(White pigment) White pigments can be titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, aluminum hydroxide, aluminum oxide, zirconium oxide, silicon oxide, or any combination thereof. The shape of the white pigment can be appropriately selected and can be amorphous or crushed. From the perspective of fluidity, spherical shape is preferred. The particle size of the white pigment is, for example, about 1 μm to about 0.5 μm. However, the smaller the particle size, the better in order to improve the light reflection or coating effect. The content of white pigment in the light-reflective reflective component can be appropriately selected, but from the perspective of light reflectivity and viscosity in liquid state, it is preferably 10 wt% to 80 wt%, more preferably 20 wt% to 70 wt%, and even more preferably 30 wt% to 60 wt%. In addition, "wt%" is a weight percentage, which indicates the ratio of the weight of the material to the total weight of the light-reflective reflective component.

(Coating member 31D) The coating member covers the light extraction surface of the light emitting element, so that the light of the light emitting element is diffused or changed into light with a peak wavelength different from the peak wavelength of the light of the light emitting element.

(Base material of the covering member) The base material of the covering member can be the same as the base material of the light-transmitting member.

(Diffusion particles of the coating member) The diffusion particles of the coating member can use the same material as the diffusion particles of the light-transmitting member.

(Light-guiding component 50) The light-guiding component is a component that connects the light-emitting element and the light-transmitting component and guides the light from the light-emitting element to the light-transmitting component. The base material of the light-guiding component can use silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin or modified resins thereof. Among them, silicone resin and modified silicone resin are preferred because of their excellent heat resistance and light resistance. As specific silicone resins, polydimethylsilicone resin, phenyl-methyl silicone resin, and diphenyl silicone resin are cited. In addition, the base material of the light-guiding component may also contain the same filler and/or wavelength conversion particles as the above-mentioned light-transmitting component. In addition, the light-guiding component may be omitted.

(Conductive connecting member 60) The so-called conductive connecting member is a member that electrically connects the electrode of the light-emitting element to the first wiring. As the conductive connecting member, any of bumps of gold, silver, copper, etc., metal paste containing metal powder and resin adhesive of silver, gold, copper, platinum, aluminum, palladium, etc., solders of tin-bismuth system, tin-copper system, tin-silver system, gold-tin system, etc., and solders of low melting point metals can be used. [Industrial Availability]

The light-emitting device of one embodiment of the present invention can be used in a backlight device of a liquid crystal display, various lighting fixtures, large displays, various display devices such as advertisements or destination guides, projector devices, and even image reading devices in digital cameras, fax machines, copiers, scanners, etc.

10: Substrate 11: Base material 11C: Center line 12: First wiring 12A: Wiring main part 12B: Plating 13: Second wiring 14: Third wiring 15: Through hole 15A, 15B: Through hole 16: Recess 16A: Central recess 16B: End recess 18: Insulating film 20: Light-emitting element 20A: First light-emitting element 20B: Second light-emitting element 20C: Third light-emitting element 21, 22: Positive and negative electrodes 23: Semiconductor multilayer body 24: Element substrate 30: Translucent component 30A: First light-transmitting component 31: Matrix 31A: 1st light-transmitting layer 31B: wavelength conversion layer 31C: 2nd light-transmitting layer 31D: coating member 31E: 1st wavelength conversion layer 31F: 2nd wavelength conversion layer 32: wavelength conversion particles 33: layer 33A, 33B: layer 40: 1st reflective member 41: 2nd reflective member 42: 3rd reflective member 50: light-guiding member 60: conductive bonding member 105: side surface 111: front surface 111A: concave portion 112: back surface 113: bottom surface 114: top surface 120A: phosphorus-containing nickel plating 120B: gold plating 120C: Nickel plating 120D: Palladium plating 120E: First gold plating 120F: Second gold plating 121: Protrusion 123: Wiring extension part 151: Fourth wiring 152: Filling member 161: Parallel part 162: Inclined part 201: Light extraction surface 201A: Light extraction surface 201B: Light extraction surface 202: Side surface 202A: Side surface 202B: Side surface 203: Electrode forming surface 203A: Electrode forming surface 203B: Electrode forming surface 203C: Electrode forming surface 311A: Second diffusion particle 311C: Second diffusion particle 311D: Diffusion particle 311E: First wavelength conversion particle 311F: Second wavelength conversion particle 312A: Matrix 312B: Matrix 312C: Matrix 312E: Matrix 312F: Matrix 403: Side surface 404: Side surface 405: Side surface 1000, 1000A, 2000,: Light-emitting device 2000A~2000H, 3000, 3000A~3000D, 4000 2011A: Short side 2011B: Short side 2011C: Short side 2012B: Short side D2: Depth of the center of the recess 16 D3: Base material thickness in Z direction D4: Length of narrow width part in Y direction D5: Length of wide width part in Y direction L1: Base material length L2: Length of first wiring in Y direction W1, W2: Base material thickness W3, W4: Depth of recessed part θ: Tilt angle

FIG. 1A is a schematic three-dimensional diagram of a light-emitting device of embodiment 1. FIG. 1B is a schematic three-dimensional diagram of a light-emitting device of embodiment 1. FIG. 1C is a schematic front view of a light-emitting device of embodiment 1. FIG. 2A is a schematic cross-sectional diagram of line 2A-2A of FIG. 1C. FIG. 2B is a schematic cross-sectional diagram of line 2B-2B of FIG. 1C. FIG. 3 is a schematic rear view of a light-emitting device of embodiment 1. FIG. 4A is a schematic three-dimensional diagram of a substrate, a via hole, and a third wiring of embodiment 1. FIG. 4B is a schematic three-dimensional diagram of a substrate, a via hole, and a third wiring of embodiment 1. FIG. 4C is a schematic three-dimensional diagram of a substrate, a via hole, and a third wiring of embodiment 1. FIG. 5 is a schematic bottom view of a light-emitting device of embodiment 1. FIG. 6A is a schematic cross-sectional view of the light-emitting device of embodiment 1, and an enlarged view showing the inside of the dotted line portion. FIG. 6B is a schematic cross-sectional view of a variation of the light-emitting device of embodiment 1, and an enlarged view showing the inside of the dotted line portion. FIG. 7A is a schematic front view of the substrate of embodiment 1. FIG. 7B is a schematic front view of a variation of the substrate of embodiment 1. FIG. 7C is a schematic front view of a variation of the substrate of embodiment 1. FIG. 8 is a schematic right side view of the light-emitting device of embodiment 1. FIG. 9A is a schematic three-dimensional view of the light-emitting device of embodiment 2. FIG. 9B is a schematic three-dimensional view of the light-emitting device of embodiment 2. FIG. 9C is a schematic front view of the light-emitting device of embodiment 2. FIG. 9D is a schematic top view of the light-emitting device of embodiment 2. FIG. 10 is a schematic cross-sectional view of line 10A-10A of FIG. 9C. FIG. 11 is a schematic rear view of the light-emitting device of embodiment 2. FIG. 12A is a schematic three-dimensional view of a variation of the light-emitting device of embodiment 2. FIG. 12B is a schematic cross-sectional view of a variation of the light-emitting device of embodiment 2. FIG. 12C is a schematic cross-sectional view of a variation of the light-emitting device of embodiment 2. FIG. 12D is a schematic rear view of a variation of the light-emitting device of embodiment 2. FIG. 12E is a schematic cross-sectional view of a variation of the light-emitting device of embodiment 2. FIG. 12F is a schematic cross-sectional view of a variation of the light-emitting device of embodiment 2. FIG. 12G is a schematic cross-sectional view of a variation of the light-emitting device of embodiment 2. FIG. 12H is a schematic cross-sectional view of a variation of the light-emitting device of embodiment 2. FIG. 12I is a schematic cross-sectional view of a variation of the light-emitting device of embodiment 2. FIG. 12J is a schematic cross-sectional view of a variation of the light-emitting device of embodiment 2. FIG. 12K is a schematic front view of the substrate of embodiment 2. FIG. 13A is a schematic three-dimensional view of the light-emitting device of embodiment 3. FIG. 13B is a schematic three-dimensional view of the light-emitting device of embodiment 3. FIG. 13C is a schematic front view of the light-emitting device of embodiment 3. FIG. 14A is a schematic cross-sectional view of the line 14A-14A of FIG. 13C. FIG. 14B is a schematic cross-sectional view of a variation of the light-emitting device of embodiment 3. FIG. 14C is a schematic cross-sectional view of a variation of the light-emitting device of embodiment 3. FIG. 15 is a schematic rear view of the light-emitting device of embodiment 3. FIG. 16 is a schematic top view of the light-emitting device of embodiment 3. FIG. 17A is a schematic front view of the substrate, the first light-emitting element, the second light-emitting element, and the third light-emitting element of embodiment 3. FIG. 17B is a schematic front view of a variation of the substrate, the first light-emitting element, the second light-emitting element, and the third light-emitting element of embodiment 3. FIG. 17C is a schematic front view of a variation of the substrate, the first light-emitting element, the second light-emitting element, and the third light-emitting element of embodiment 3. FIG. 18A is a schematic cross-sectional view of a variation of the light-emitting device of embodiment 3. FIG. 18B is a schematic cross-sectional view of a variation of the light-emitting device of embodiment 3. FIG. 19 is a schematic cross-sectional view of a variation of the light-emitting device of embodiment 4.

10: Substrate

11: Base material

12: 1st wiring

13: 2nd wiring

14: 3rd wiring

15: Conductive hole

16: Concave part

20: Light-emitting element

21, 22: Positive and negative electrodes

23: Semiconductor multilayer body

24: Component substrate

30: Translucent components

31: Base material

32: Wavelength conversion particles

33: Layer

40: 1st reflective component

50: Light-guiding component

60: Conductive bonding component

111: Front

112: Back

121: convex part

151: 4th wiring

152: Filling components

201: Light extraction surface

202: Side

203: Electrode forming surface

1000: Light-emitting device

Claims (10)

A light-emitting device, comprising: a substrate, comprising: a first wiring, a second wiring, a substrate having at least one recess, and a conductive hole located inside the substrate; at least one light-emitting element, which is mounted on the first wiring and electrically connected to the first wiring; and a first reflective member; and the substrate has a rectangular front surface, a back surface located on the opposite side of the front surface, a bottom surface adjacent to the front surface and orthogonal to the front surface, and an upper surface located on the opposite side of the bottom surface; the at least one recess opens on the bottom surface and the back surface of the substrate; the first reflective member covers the side surface of the light-emitting element and the front surface of the substrate; the first wiring and the second wiring are respectively arranged on the front surface and the back surface of the substrate; The conductive hole is arranged at a position overlapping with the first part of the first wiring when viewed from the front, and is electrically connected to the first wiring and the second wiring; The first wiring includes a first part and a second part that are continuous in the long side direction of the rectangular shape when viewed from the front; The width of the first part along the short side direction of the rectangular shape is larger than the width of the second part; The at least one light-emitting element has an electrode; The first part of the first wiring includes a portion overlapping with the electrode of the at least one light-emitting element and the conductive hole when viewed from the front. A light-emitting device, comprising: a substrate, comprising: a first wiring, a second wiring, a substrate having at least one recess, and a conductive hole located inside the substrate; at least one light-emitting element, which is mounted on the first wiring and electrically connected to the first wiring; and a first reflective member; and the substrate has a rectangular front surface, a back surface located on the opposite side of the front surface, a bottom surface adjacent to the front surface and orthogonal to the front surface, and an upper surface located on the opposite side of the bottom surface; the at least one recess opens on the bottom surface and the back surface of the substrate; the first reflective member covers the side surface of the light-emitting element and the front surface of the substrate; the first wiring and the second wiring are respectively arranged on the front surface and the back surface of the substrate; the conductive hole is electrically connected to the first wiring and the second wiring; The first wiring includes a first part and a second part that are continuous in the long side direction of the rectangular shape when viewed from the front; The width of the first part along the short side direction of the rectangular shape is larger than the width of the second part; The at least one light-emitting element has an electrode; The second part of the first wiring includes a part that overlaps with the electrode of the at least one light-emitting element when viewed from the front. A light-emitting device as claimed in claim 1 or 2, wherein the electrode of the at least one light-emitting element includes a portion overlapping with the first portion of the first wiring when viewed from the front, and a portion overlapping with the second portion of the first wiring. A light-emitting device as claimed in claim 1 or 2, wherein the center of the above-mentioned conductive hole overlaps with the above-mentioned first part of the above-mentioned first wiring when viewed from the front. A light-emitting device as claimed in claim 1 or 2, wherein the depth of the at least one recess of the substrate in a direction from the back surface to the front surface is deeper on the bottom surface side of the substrate than on the top surface side. A light-emitting device as claimed in claim 1 or 2, wherein the side surface of the first reflecting component in the short direction and the side surface of the substrate in the short direction are substantially on the same plane. The light-emitting device of claim 1 or 2 further comprises a light-transmitting member covering the light-emitting element; The first reflective member covers the side surface of the light-transmitting member. A light-emitting device as claimed in claim 1 or 2, wherein the first reflective member has side surfaces located on the bottom surface side and the top surface side of the substrate in the long-side direction; Among the side surfaces of the first reflective member, the side surface located on the bottom surface side of the substrate and the side surface located on the top surface side of the substrate are inclined toward the inner side of the light-emitting device in the direction from the back surface to the front surface. A light-emitting device as claimed in claim 1 or 2, wherein the conductive hole is arranged at a position that does not overlap with the at least one recess when viewed from the back. A light-emitting device as claimed in claim 1 or 2, wherein the at least one recess is disposed at a position overlapping with the second portion of the first wiring when viewed from the front.