[go: up one dir, main page]

TWI860379B - Process liquid discharge nozzle, nozzle arm, substrate processing device, and substrate processing method - Google Patents

Process liquid discharge nozzle, nozzle arm, substrate processing device, and substrate processing method Download PDF

Info

Publication number
TWI860379B
TWI860379B TW109122371A TW109122371A TWI860379B TW I860379 B TWI860379 B TW I860379B TW 109122371 A TW109122371 A TW 109122371A TW 109122371 A TW109122371 A TW 109122371A TW I860379 B TWI860379 B TW I860379B
Authority
TW
Taiwan
Prior art keywords
substrate
nozzle
processing liquid
spray nozzle
arm
Prior art date
Application number
TW109122371A
Other languages
Chinese (zh)
Other versions
TW202115782A (en
Inventor
天野嘉文
相浦一博
植木達博
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202115782A publication Critical patent/TW202115782A/en
Application granted granted Critical
Publication of TWI860379B publication Critical patent/TWI860379B/en

Links

Images

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Nozzles (AREA)
  • Coating Apparatus (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

An object of the invention is to provide technology that can suppress the production of particles. A process liquid discharge nozzle according to an embodiment of the invention discharges a process liquid used in substrate processing. The process liquid discharge nozzle comprises a nozzle main body section and an angle changing mechanism. The nozzle main body section comprises a first body section in which a first flow path that connects to a process liquid supply channel is formed, and a second body section in which a second flow channel that connects to the first flow channel is formed and which is curved with respect to the first body section. The angle change mechanism changes the angle of the nozzle main body section in the horizontal direction relative to a fixed member to which the nozzle main body section is fixed.

Description

處理液噴吐噴嘴、噴嘴臂、基板處理裝置及基板處理方法Processing liquid spray nozzle, nozzle arm, substrate processing device and substrate processing method

本發明係關於一種處理液噴吐噴嘴、噴嘴臂、基板處理裝置及基板處理方法。The present invention relates to a processing liquid spray nozzle, a nozzle arm, a substrate processing device and a substrate processing method.

於專利文獻1,揭露從處理液噴嘴朝向基板噴吐處理液。 [習知技術文獻] [專利文獻]Patent document 1 discloses spraying a processing liquid from a processing liquid nozzle toward a substrate. [Known technical document] [Patent document]

[專利文獻1]:日本特開第2019-40958號公報[Patent Document 1]: Japanese Patent Application Publication No. 2019-40958

[本發明所欲解決的問題][Problems to be solved by the present invention]

本發明提供抑制微粒的產生之技術。 [解決問題之技術手段]The present invention provides a technology for suppressing the generation of particles. [Technical means for solving the problem]

本發明的一態樣之處理液噴吐噴嘴,為噴吐基板處理所使用的處理液之處理液噴吐噴嘴。處理液噴吐噴嘴,具備噴嘴本體部及角度變更機構。噴嘴本體部,具備第1本體部以及第2本體部,該第1本體部形成有和處理液供給路連通的第1流路,該第2本體部形成有和第1流路連通的第2流路,對第1本體部彎曲。角度變更機構,對於固定噴嘴本體部的固定構件,變更水平方向中之噴嘴本體部的角度。 [本發明之效果]A processing liquid spray nozzle of one embodiment of the present invention is a processing liquid spray nozzle for spraying a processing liquid used for substrate processing. The processing liquid spray nozzle has a nozzle body and an angle changing mechanism. The nozzle body has a first body and a second body, the first body forming a first flow path connected to the processing liquid supply path, and the second body forming a second flow path connected to the first flow path, which is bent relative to the first body. The angle changing mechanism changes the angle of the nozzle body in the horizontal direction with respect to the fixing member fixing the nozzle body. [Effects of the present invention]

依本發明,可抑制微粒的產生。According to the present invention, the generation of fine particles can be suppressed.

以下,參考附圖,詳細說明本申請案所揭露之處理液噴吐噴嘴、噴嘴臂、基板處理裝置及基板處理方法的實施形態。另,並未限定為藉由以下所示的實施形態揭露之處理液噴吐噴嘴、噴嘴臂、基板處理裝置及基板處理方法。The following is a detailed description of the processing liquid spray nozzle, nozzle arm, substrate processing device, and substrate processing method disclosed in this application with reference to the attached drawings. In addition, the present invention is not limited to the processing liquid spray nozzle, nozzle arm, substrate processing device, and substrate processing method disclosed by the following embodiments.

以下參考之各圖式,為了容易理解說明,而有界定彼此垂直的X軸方向、Y軸方向及Z軸方向,顯示使Z軸正方向為鉛直朝上的方向之垂直座標系的情況。X軸方向及Y軸方向為水平方向。以下,有使Z軸正方向為上方,使Z軸負方向為下方而進行說明之情況。In order to facilitate the understanding of the description, the drawings referred to below define mutually perpendicular X-axis, Y-axis and Z-axis directions, and show the vertical coordinate system with the positive direction of the Z-axis pointing straight up. The X-axis direction and the Y-axis direction are horizontal directions. In the following, the description is made with the positive direction of the Z-axis pointing upward and the negative direction of the Z-axis pointing downward.

(第1實施形態) <基板處理裝置的全體構成> 參考圖1,針對第1實施形態之基板處理裝置1的構成予以說明。圖1為第1實施形態之基板處理裝置1的構成之示意圖。(First embodiment) <Overall structure of substrate processing apparatus> The structure of the substrate processing apparatus 1 of the first embodiment will be described with reference to FIG. 1 . FIG. 1 is a schematic diagram of the structure of the substrate processing apparatus 1 of the first embodiment.

基板處理裝置1,具備處理容器2、固持部3、外側杯4、臂5、及控制裝置6。處理容器2,收納固持部3、外側杯4、及臂5。處理容器2,收納後述臂5的處理液噴吐噴嘴21、及移動機構11。The substrate processing apparatus 1 includes a processing container 2, a holding portion 3, an outer cup 4, an arm 5, and a control device 6. The processing container 2 accommodates the holding portion 3, the outer cup 4, and the arm 5. The processing container 2 accommodates a processing liquid spray nozzle 21 of the arm 5 described later and a moving mechanism 11.

固持部3,固持所載置之圓形的基板W。固持部3,在施行基板處理之情況,固持基板W。例如,固持部3,藉由真空吸盤,吸附基板W之底面側,予以固持。此外,固持部3(基板旋轉部之一例),使所載置的基板W旋轉。具體而言,固持部3,以沿著Z軸方向的軸為中心而旋轉,使固持的基板W旋轉。The holding part 3 holds the placed circular substrate W. The holding part 3 holds the substrate W when performing substrate processing. For example, the holding part 3 holds the substrate W by adsorbing the bottom side of the substrate W with a vacuum suction cup. In addition, the holding part 3 (an example of a substrate rotating part) rotates the placed substrate W. Specifically, the holding part 3 rotates around an axis along the Z-axis direction to rotate the held substrate W.

此外,固持部3,於Z軸方向升降。固持部3,例如在固持基板W之狀態下升降。固持部3,使基板W在傳遞位置與處理位置之間升降。傳遞位置,係設定為較外側杯4更為上方之位置,為在固持部3與基板搬運裝置(未圖示)之間施行基板W的傳遞之位置。處理位置,較傳遞位置更為下方,係設定於外側杯4內之位置,為對基板W施行基板處理之位置。In addition, the holding part 3 is raised and lowered in the Z-axis direction. The holding part 3 is raised and lowered, for example, in a state of holding the substrate W. The holding part 3 allows the substrate W to be raised and lowered between the transfer position and the processing position. The transfer position is set to a position above the outer cup 4, and is a position for transferring the substrate W between the holding part 3 and the substrate transport device (not shown). The processing position is set to a position below the transfer position, inside the outer cup 4, and is a position for performing substrate processing on the substrate W.

外側杯4(杯部之一例),設置為圍繞固持部3、及固持部3所固持的基板W之外側。外側杯4,設置為環狀。The outer cup 4 (an example of a cup portion) is provided to surround the holding portion 3 and the outer side of the substrate W held by the holding portion 3. The outer cup 4 is provided in a ring shape.

外側杯4,承擋從基板W飛散出的處理液。外側杯4,由耐藥性高之材料形成。於外側杯4的底部,設置排液口(未圖示)。將外側杯4所承擋的處理液,從排液口往處理容器2的外部排出。The outer cup 4 receives the processing liquid scattered from the substrate W. The outer cup 4 is formed of a material with high chemical resistance. A drain port (not shown) is provided at the bottom of the outer cup 4. The processing liquid received by the outer cup 4 is discharged to the outside of the processing container 2 from the drain port.

處理液,例如為藥液或沖洗液等。藥液,例如為氫氟酸(HF)、稀氫氟酸(DHF)、氟硝酸等。另,氟硝酸,係氫氟酸(HF)與硝酸(HNO3 )之混合液。此外,沖洗液,例如為DIW(去離子水)。The treatment liquid is, for example, a chemical solution or a rinse solution. The chemical solution is, for example, hydrofluoric acid (HF), dilute hydrofluoric acid (DHF), fluoronitric acid, etc. In addition, fluoronitric acid is a mixture of hydrofluoric acid (HF) and nitric acid (HNO 3 ). In addition, the rinse solution is, for example, DIW (deionized water).

臂5,以沿著X軸方向排列的方式配置一對。具體而言,臂5,在X軸方向中,配置於基板W之兩側。以下,有將一對臂5中的X軸負方向側之臂5作為左臂5L,將X軸正方向側之臂5作為右臂5R而說明的情況。臂5,具備臂部10、移動機構11、及處理液供給部12。另,臂5,亦可配置1條。The arm 5 is arranged in a pair along the X-axis direction. Specifically, the arm 5 is arranged on both sides of the substrate W in the X-axis direction. In the following, the arm 5 on the negative side of the X-axis in the pair of arms 5 is described as the left arm 5L, and the arm 5 on the positive side of the X-axis is described as the right arm 5R. The arm 5 has an arm part 10, a moving mechanism 11, and a processing liquid supply part 12. In addition, a single arm 5 may be arranged.

臂部10,從基端沿著Z軸方向延伸,並從上方的一端往水平方向延伸。臂部10,設置為L字形。The arm 10 extends from the base end in the Z-axis direction and extends from the upper end in the horizontal direction. The arm 10 is provided in an L-shape.

移動機構11(轉動機構之一例),使臂部10轉動。具體而言,移動機構11,以往Z軸方向延伸之臂部10的軸為中心,使臂部10轉動。此外,移動機構11,使臂部10沿著X軸方向及Z軸方向移動。移動機構11,亦可設置複數個。例如,作為移動機構11,設置使臂部10以Z軸方向的軸為中心而轉動之移動機構、使臂部10沿著X軸方向移動之移動機構、及使臂部10沿著Z軸方向移動之移動機構。The moving mechanism 11 (an example of a rotating mechanism) rotates the arm 10. Specifically, the moving mechanism 11 rotates the arm 10 around the axis of the arm 10 extending in the Z-axis direction. In addition, the moving mechanism 11 moves the arm 10 in the X-axis direction and the Z-axis direction. A plurality of moving mechanisms 11 may be provided. For example, as the moving mechanism 11, a moving mechanism that rotates the arm 10 around the axis in the Z-axis direction, a moving mechanism that moves the arm 10 in the X-axis direction, and a moving mechanism that moves the arm 10 in the Z-axis direction may be provided.

處理液供給部12,將處理液供給至基板W之頂面。處理液供給部12,往基板W之頂面的邊緣噴吐處理液,於基板W之邊緣施行蝕刻處理。處理液供給部12,設置於臂部10之前端。關於處理液供給部12的細節,將於後述內容說明。The processing liquid supply unit 12 supplies the processing liquid to the top surface of the substrate W. The processing liquid supply unit 12 sprays the processing liquid to the edge of the top surface of the substrate W to perform etching processing on the edge of the substrate W. The processing liquid supply unit 12 is provided at the front end of the arm unit 10. The details of the processing liquid supply unit 12 will be described later.

邊緣,係從圓形的基板W之端面算起,例如包含寬1~5mm程度的基板W之徑方向內側的區域。邊緣,為環狀區域。The edge is a region on the inner side of the circular substrate W in the radial direction, which is measured from the end surface of the circular substrate W and includes a width of about 1 to 5 mm, for example. The edge is a ring-shaped region.

另,基板處理裝置1,亦可具備:往基板W之底面的邊緣供給處理液之底面供給部(未圖示)、朝向基板W之底面供給加熱的流體之加熱機構(未圖示)等。In addition, the substrate processing apparatus 1 may also include: a bottom surface supply unit (not shown) for supplying a processing liquid to the edge of the bottom surface of the substrate W, a heating mechanism (not shown) for supplying a heated fluid toward the bottom surface of the substrate W, and the like.

控制裝置6,例如為電腦,具備儲存部6a與控制部6b。The control device 6, such as a computer, includes a storage unit 6a and a control unit 6b.

儲存部6a,例如藉由RAM、快閃記憶體(Flash Memory)等半導體記憶體元件,或硬碟、光碟等儲存裝置而實現,儲存有控制在基板處理裝置1中實行之各種處理的程式。The storage unit 6 a is implemented by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk, and stores programs for controlling various processes performed in the substrate processing apparatus 1 .

控制部6b,包含具備CPU(Central Processing Unit,中央處理單元)、ROM(Read Only Memory,唯讀記憶體)、RAM(Random Access Memory,隨機存取記憶體)、輸出入埠等之微電腦與各種電路。控制部6b,讀取並實行儲存在儲存部6a的程式,藉以控制基板處理裝置1的運作。The control unit 6b includes a microcomputer and various circuits having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input/output port, etc. The control unit 6b reads and executes the program stored in the storage unit 6a to control the operation of the substrate processing device 1.

另,程式,記錄在電腦可讀取之記錄媒體,亦可從記錄媒體安裝至控制裝置6的儲存部6a。作為電腦可讀取之記錄媒體,例如有硬碟(HD)、軟性磁碟(FD)、光碟(CD)、磁光碟(MO)、記憶卡等。In addition, the program is recorded on a computer-readable recording medium and can be installed from the recording medium to the storage unit 6a of the control device 6. Examples of the computer-readable recording medium include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like.

<處理液供給部> 接著,參考圖2及圖3,針對處理液供給部12予以說明。圖2為第1實施形態之處理液供給部12的立體圖。圖3為第1實施形態之處理液供給部12的俯視圖。另,圖2及圖3之處理液供給部12,係設置於右臂5R之處理液供給部12。<Processing liquid supply unit> Next, the processing liquid supply unit 12 will be described with reference to FIG. 2 and FIG. 3. FIG. 2 is a perspective view of the processing liquid supply unit 12 of the first embodiment. FIG. 3 is a top view of the processing liquid supply unit 12 of the first embodiment. In addition, the processing liquid supply unit 12 of FIG. 2 and FIG. 3 is the processing liquid supply unit 12 provided on the right arm 5R.

處理液供給部12,具備噴嘴區塊20及處理液噴吐噴嘴21。噴嘴區塊20,安裝於臂部10之前端。亦即,於臂部10,安裝有噴嘴區塊20(固定構件之一例)。於噴嘴區塊20,連接設置於臂5的處理液供給管5a。於噴嘴區塊20,如圖4所示,形成有處理液供給路20a。從處理液供給管5a供給的處理液,於處理液供給路20a流動。圖4為圖3的IV-IV剖面圖。The treatment liquid supply portion 12 includes a nozzle block 20 and a treatment liquid spray nozzle 21. The nozzle block 20 is mounted on the front end of the arm 10. That is, the nozzle block 20 (an example of a fixed component) is mounted on the arm 10. The treatment liquid supply pipe 5a provided on the arm 5 is connected to the nozzle block 20. As shown in FIG. 4 , a treatment liquid supply path 20a is formed in the nozzle block 20. The treatment liquid supplied from the treatment liquid supply pipe 5a flows in the treatment liquid supply path 20a. FIG. 4 is a cross-sectional view taken along line IV-IV of FIG. 3 .

於噴嘴區塊20,形成第1凹部20b、第2凹部20c、及第3凹部20d。第1凹部20b,形成為從噴嘴區塊20之頂面朝向下方凹入。於第1凹部20b之底部,形成貫通孔20e。於貫通孔20e,插入將處理液噴吐噴嘴21固定於噴嘴區塊20之螺栓22。The nozzle block 20 is formed with a first recess 20b, a second recess 20c, and a third recess 20d. The first recess 20b is formed to be recessed downward from the top surface of the nozzle block 20. A through hole 20e is formed at the bottom of the first recess 20b. A bolt 22 for fixing the treatment liquid spray nozzle 21 to the nozzle block 20 is inserted into the through hole 20e.

如圖3所示,對1個處理液噴吐噴嘴21,設置複數個貫通孔20e。例如,對1個處理液噴吐噴嘴21,設置2個貫通孔20e。另,對於1個處理液噴吐噴嘴21的貫通孔20e之數量,不限於2個。例如,對於1個處理液噴吐噴嘴21的貫通孔20e之數量,亦可為3個以上。As shown in FIG3 , a plurality of through holes 20e are provided for one processing liquid spray nozzle 21. For example, two through holes 20e are provided for one processing liquid spray nozzle 21. In addition, the number of through holes 20e for one processing liquid spray nozzle 21 is not limited to two. For example, the number of through holes 20e for one processing liquid spray nozzle 21 may be three or more.

第2凹部20c,如圖4所示,形成為從噴嘴區塊20之底面朝向上方凹入。第2凹部20c,形成在貫通孔20e之周圍。第2凹部20c,藉由貫通孔20e而和第1凹部20b連通。於第2凹部20c,插入後述處理液噴吐噴嘴21之安裝部32a。As shown in FIG. 4 , the second recess 20c is formed to be recessed upward from the bottom surface of the nozzle block 20. The second recess 20c is formed around the through hole 20e. The second recess 20c is connected to the first recess 20b through the through hole 20e. The mounting portion 32a of the treatment liquid spray nozzle 21 described later is inserted into the second recess 20c.

第2凹部20c及貫通孔20e,設置為對於噴嘴區塊20,可變更水平方向中之處理液噴吐噴嘴21的角度。具體而言,第2凹部20c,以可與處理液噴吐噴嘴21之安裝位置相應而將處理液噴吐噴嘴21的安裝部32a插入之方式,設置複數個。例如,對1個處理液噴吐噴嘴21,設置2個第2凹部20c。另,亦可設置為使2個第2凹部20c的一部分重疊。亦即,2個第2凹部20c,亦可連通而設置。The second recess 20c and the through hole 20e are provided so as to change the angle of the processing liquid spray nozzle 21 in the horizontal direction with respect to the nozzle block 20. Specifically, a plurality of second recesses 20c are provided so as to allow the mounting portion 32a of the processing liquid spray nozzle 21 to be inserted corresponding to the mounting position of the processing liquid spray nozzle 21. For example, two second recesses 20c are provided for one processing liquid spray nozzle 21. Alternatively, the two second recesses 20c may be provided so as to overlap a portion thereof. That is, the two second recesses 20c may be provided in communication.

此外,貫通孔20e,設置為可變更處理液噴吐噴嘴21的角度。具體而言,和1個處理液噴吐噴嘴21相對應的2個貫通孔20e,係在以後述處理液噴吐噴嘴21之導入部35b的中心軸作為中心之同一半徑上配置中心軸而形成。Furthermore, the through hole 20e is provided to change the angle of the processing liquid spray nozzle 21. Specifically, two through holes 20e corresponding to one processing liquid spray nozzle 21 are formed by arranging the central axis on the same radius with the central axis of the introduction portion 35b of the processing liquid spray nozzle 21 described later as the center.

第3凹部20d,形成為從噴嘴區塊20之底面朝向上方凹入。於第3凹部20d,插入後述處理液噴吐噴嘴21的導入部35b。第3凹部20d的內壁面,形成為圓形。The third recess 20d is formed to be recessed upward from the bottom surface of the nozzle block 20. An introduction portion 35b of a treatment liquid spray nozzle 21 described later is inserted into the third recess 20d. The inner wall surface of the third recess 20d is formed in a circular shape.

處理液噴吐噴嘴21,伴隨移動機構11所進行之臂部10的移動,而在待機位置與噴吐位置之間移動。待機位置,為處理液噴吐噴嘴21的一部分收納於形成在外側杯4之缺口部4a的位置。待機位置,藉由固持部3而使基板W成可在傳遞位置與處理位置之間升降的位置。在處理液噴吐噴嘴21位於待機位置的情況,藉由基板W之升降而使基板W與處理液噴吐噴嘴21不接觸。The processing liquid spray nozzle 21 moves between the standby position and the spray position as the arm 10 is moved by the moving mechanism 11. The standby position is a position where a part of the processing liquid spray nozzle 21 is accommodated in the notch 4a formed in the outer cup 4. The standby position is a position where the substrate W can be raised and lowered between the transfer position and the processing position by the holding portion 3. When the processing liquid spray nozzle 21 is located at the standby position, the substrate W is raised and lowered so that the substrate W is not in contact with the processing liquid spray nozzle 21.

噴吐位置,係在基板W之徑方向中成為較待機位置更為內側的位置。噴吐位置,為藉由處理液噴吐噴嘴21將處理液噴吐至基板W之邊緣的位置。The spraying position is a position that is located inside the standby position in the radial direction of the substrate W. The spraying position is a position where the processing liquid is sprayed to the edge of the substrate W by the processing liquid spraying nozzle 21 .

接著,參考圖5~圖7,針對處理液噴吐噴嘴21予以說明。圖5為第1實施形態之處理液噴吐噴嘴21的前視圖。圖6為第1實施形態之處理液噴吐噴嘴21的俯視圖。圖7為圖6的VII-VII剖面圖。Next, the treatment liquid spray nozzle 21 will be described with reference to Fig. 5 to Fig. 7. Fig. 5 is a front view of the treatment liquid spray nozzle 21 of the first embodiment. Fig. 6 is a top view of the treatment liquid spray nozzle 21 of the first embodiment. Fig. 7 is a VII-VII cross-sectional view of Fig. 6.

處理液噴吐噴嘴21,噴吐基板處理所使用的處理液。處理液噴吐噴嘴21,具備噴嘴本體部30、噴嘴噴吐部31、及連接部32。The processing liquid spraying nozzle 21 sprays the processing liquid used for substrate processing. The processing liquid spraying nozzle 21 includes a nozzle body 30, a nozzle spraying part 31, and a connecting part 32.

噴嘴本體部30,具備第1本體部35及第2本體部36。第1本體部35,往Z軸方向延伸。於第1本體部35,如圖7所示,形成第1流路35a。第1流路35a,沿著Z軸方向形成。第1流路35a,和噴嘴區塊20之處理液供給路20a(參考圖4)連通。亦即,於第1本體部35,形成和處理液供給路20a連通的第1流路35a。於上方之第1本體部35,設置插入至噴嘴區塊20的第3凹部20d(參考圖4)之導入部35b。導入部35b的外壁面,形成為圓形。The nozzle body 30 includes a first body 35 and a second body 36. The first body 35 extends in the Z-axis direction. In the first body 35, as shown in FIG7, a first flow path 35a is formed. The first flow path 35a is formed along the Z-axis direction. The first flow path 35a is connected to the processing liquid supply path 20a (refer to FIG4) of the nozzle block 20. That is, the first flow path 35a connected to the processing liquid supply path 20a is formed in the first body 35. An introduction portion 35b inserted into the third recess 20d (refer to FIG4) of the nozzle block 20 is provided in the upper first body 35. The outer wall surface of the introduction portion 35b is formed in a circular shape.

於導入部35b與噴嘴區塊20的第3凹部20d之間,設置O型環38(參考圖4)。O型環38,防止處理液從第1本體部35與噴嘴區塊20之間漏洩。An O-ring 38 (see FIG. 4 ) is provided between the introduction portion 35 b and the third recess 20 d of the nozzle block 20 . The O-ring 38 prevents the process liquid from leaking from between the first body portion 35 and the nozzle block 20 .

第2本體部36,對第1本體部35彎曲而設置,從第1本體部35的下端朝向斜下方延伸。具體而言,第2本體部36,配合基板W之旋轉方向而往斜下方延伸。The second body portion 36 is bent relative to the first body portion 35, and extends obliquely downward from the lower end of the first body portion 35. Specifically, the second body portion 36 extends obliquely downward in accordance with the rotation direction of the substrate W.

另,在設置於左臂5L之處理液噴吐噴嘴21、及設置於右臂5R之處理液噴吐噴嘴21,各第2本體部36,從第1本體部35的下端配合基板W之旋轉方向而分別往斜下方延伸。因此,在設置於左臂5L之處理液噴吐噴嘴21、及設置於右臂5R之處理液噴吐噴嘴21中,各第2本體部36所延伸之方向,例如於Y軸方向中,成為相反方向。In addition, in the processing liquid spraying nozzle 21 provided on the left arm 5L and the processing liquid spraying nozzle 21 provided on the right arm 5R, each second body portion 36 extends obliquely downward from the lower end of the first body portion 35 in accordance with the rotation direction of the substrate W. Therefore, in the processing liquid spraying nozzle 21 provided on the left arm 5L and the processing liquid spraying nozzle 21 provided on the right arm 5R, the directions in which each second body portion 36 extends are opposite to each other, for example, in the Y-axis direction.

於第2本體部36,如圖7所示,形成第2流路36a。第2流路36a,從第1流路35a的下端朝向斜下方延伸。第2流路36a,和第1流路35a連通。如此地,第2本體部36,形成有和第1流路35a連通的第2流路36a,對第1本體部35彎曲。As shown in FIG. 7 , the second body 36 is formed with a second flow path 36a. The second flow path 36a extends obliquely downward from the lower end of the first flow path 35a. The second flow path 36a is connected to the first flow path 35a. In this way, the second body 36 is formed with the second flow path 36a connected to the first flow path 35a, and is bent relative to the first body 35.

此外,於第2本體部36,形成凹部36b。凹部36b,形成為從第2本體部36之下方側的端部朝向第1本體部35凹入。於凹部36b,插入噴嘴噴吐部31。於凹部36b的內壁面之一部分,形成螺紋槽。Furthermore, a recessed portion 36b is formed in the second body portion 36. The recessed portion 36b is formed so as to be recessed from the lower end of the second body portion 36 toward the first body portion 35. The nozzle spouting portion 31 is inserted into the recessed portion 36b. A threaded groove is formed in a portion of the inner wall surface of the recessed portion 36b.

噴嘴噴吐部31,朝向基板W之邊緣噴吐處理液。噴嘴噴吐部31,沿著第2本體部36所延伸之方向延伸。亦即,噴嘴噴吐部31,沿著第2本體部36朝向斜下方延伸。The nozzle spraying portion 31 sprays the processing liquid toward the edge of the substrate W. The nozzle spraying portion 31 extends along the direction in which the second body portion 36 extends. That is, the nozzle spraying portion 31 extends along the second body portion 36 toward obliquely downward.

噴嘴噴吐部31,插入至第2本體部36的凹部36b,安裝於噴嘴本體部30。噴嘴噴吐部31,可於第2本體部36之前端裝卸。The nozzle spraying part 31 is inserted into the recessed part 36b of the second main body part 36 and mounted on the nozzle main body part 30. The nozzle spraying part 31 can be attached to and detached from the front end of the second main body part 36.

於噴嘴噴吐部31中之插入至第2本體部36的凹部36b之插入部31a,形成螺紋脊。螺紋脊,與形成在凹部36b的內壁面之螺紋槽相應而形成。噴嘴噴吐部31,與噴嘴本體部30螺合。The insertion portion 31a of the nozzle discharge portion 31 inserted into the recess 36b of the second body portion 36 is formed with a thread ridge. The thread ridge is formed corresponding to the thread groove formed on the inner wall surface of the recess 36b. The nozzle discharge portion 31 is screwed with the nozzle body 30.

於噴嘴噴吐部31的插入部31a與第2本體部36之間,設置O型環39。O型環39,防止處理液從噴嘴噴吐部31與第2本體部36之間漏洩。An O-ring 39 is provided between the insertion portion 31a of the nozzle ejection portion 31 and the second body portion 36. The O-ring 39 prevents the process liquid from leaking from between the nozzle ejection portion 31 and the second body portion 36.

於噴嘴噴吐部31,形成有和第2流路36a連通的噴吐流路31b。噴吐流路31b之直徑,較第2流路36a之直徑更小。具體而言,噴吐流路31b的內壁面31c之直徑,較第2流路36a的內壁面36c之直徑更小。另,噴吐流路31b的內壁面31c之直徑,較第1流路35a的內壁面35c之直徑更小。The nozzle ejection portion 31 is formed with an ejection passage 31b connected to the second passage 36a. The diameter of the ejection passage 31b is smaller than the diameter of the second passage 36a. Specifically, the diameter of the inner wall surface 31c of the ejection passage 31b is smaller than the diameter of the inner wall surface 36c of the second passage 36a. In addition, the diameter of the inner wall surface 31c of the ejection passage 31b is smaller than the diameter of the inner wall surface 35c of the first passage 35a.

此外,於噴嘴噴吐部31之前端,形成有噴吐口31d,噴吐口31d和噴吐流路31b連通,將處理液朝向基板W噴吐。噴吐口31d之直徑,較噴吐流路31b之直徑更小。具體而言,噴吐口31d的內壁面31e之直徑,較噴吐流路31b的內壁面31c之直徑更小。In addition, a nozzle 31d is formed at the front end of the nozzle ejection portion 31, and the nozzle 31d is connected to the ejection flow path 31b to eject the processing liquid toward the substrate W. The diameter of the nozzle 31d is smaller than the diameter of the ejection flow path 31b. Specifically, the diameter of the inner wall surface 31e of the nozzle 31d is smaller than the diameter of the inner wall surface 31c of the ejection flow path 31b.

噴吐流路31b之直徑、及噴吐口31d之直徑,係與處理之種類或噴吐的處理液之種類等相應而設定。亦即,在處理液噴吐噴嘴21,可與處理之種類或噴吐的處理液之種類等相應,而更換安裝於噴嘴本體部30之噴嘴噴吐部31。The diameter of the spraying passage 31b and the diameter of the spraying port 31d are set in accordance with the type of treatment or the type of treatment liquid sprayed, etc. That is, in the treatment liquid spraying nozzle 21, the nozzle spraying portion 31 mounted on the nozzle body 30 can be replaced in accordance with the type of treatment or the type of treatment liquid sprayed, etc.

如此地,於噴嘴噴吐部31,形成有和第2流路36a連通的噴吐流路31b,將處理液噴吐至基板W之邊緣。亦即,處理液噴吐噴嘴21,朝向基板W之邊緣噴吐處理液。In this way, the nozzle ejection portion 31 is formed with the ejection flow path 31 b communicating with the second flow path 36 a to eject the processing liquid to the edge of the substrate W. That is, the processing liquid ejection nozzle 21 ejects the processing liquid toward the edge of the substrate W.

連接部32,如圖5及圖6所示,對第1本體部35往水平方向延伸。連接部32,與第1本體部35一體化地設置。於連接部32,設置朝向上方突出之安裝部32a。於安裝部32a,如圖6所示,形成螺栓22(參考圖4)所插入的螺栓孔32b。於螺栓孔32b的內壁面,形成與螺栓22之螺紋脊對應的螺紋槽。將螺栓22螺合至連接部32。藉由將螺栓22螺合,而將噴嘴本體部30,固定於噴嘴區塊20。As shown in FIG. 5 and FIG. 6 , the connecting portion 32 extends horizontally with respect to the first main body portion 35. The connecting portion 32 is provided integrally with the first main body portion 35. A mounting portion 32a protruding upward is provided on the connecting portion 32. As shown in FIG. 6 , a bolt hole 32b into which the bolt 22 (see FIG. 4 ) is inserted is formed on the mounting portion 32a. A thread groove corresponding to the thread ridge of the bolt 22 is formed on the inner wall surface of the bolt hole 32b. The bolt 22 is screwed into the connecting portion 32. By screwing the bolt 22, the nozzle main body 30 is fixed to the nozzle block 20.

<處理液噴吐噴嘴的處理液之噴吐角度變更> 在處理液噴吐噴嘴21,藉由以插入至噴嘴區塊20的第3凹部20d之導入部35b為中心而轉動,可使處理液噴吐噴嘴21,對於噴嘴區塊20往水平方向轉動。此外,處理液噴吐噴嘴21,藉由變更連接部32之安裝部32a所插入的第2凹部20c之位置,而可變更對於噴嘴區塊20之安裝位置。亦即,連接部32(角度變更機構之一例),可變更對於噴嘴區塊20(固定構件之一例)之安裝位置。換言之,則連接部32,對於固定噴嘴本體部30的噴嘴區塊20(固定構件之一例),變更水平方向中之噴嘴本體部30的角度。<Change of the spraying angle of the processing liquid of the processing liquid spray nozzle> The processing liquid spray nozzle 21 can be rotated in the horizontal direction relative to the nozzle block 20 by rotating around the introduction portion 35b inserted into the third recess 20d of the nozzle block 20. In addition, the processing liquid spray nozzle 21 can change the installation position relative to the nozzle block 20 by changing the position of the second recess 20c into which the installation portion 32a of the connecting portion 32 is inserted. That is, the connecting portion 32 (an example of an angle changing mechanism) can change the installation position relative to the nozzle block 20 (an example of a fixing member). In other words, the connection portion 32 changes the angle of the nozzle body 30 in the horizontal direction with respect to the nozzle block 20 (an example of a fixing member) that fixes the nozzle body 30 .

藉由變更噴嘴本體部30的相對於噴嘴區塊20之安裝位置,而可變更處理液的相對於噴嘴區塊20之噴吐角度。亦即,處理液噴吐噴嘴21,可變更處理液的相對於基板W之噴吐角度。噴吐角度,係由處理液噴吐噴嘴21噴吐出的處理液噴至基板W之位置中的相對於基板W之切線的水平方向之角度。By changing the installation position of the nozzle body 30 relative to the nozzle block 20, the spraying angle of the processing liquid relative to the nozzle block 20 can be changed. That is, the processing liquid spraying nozzle 21 can change the spraying angle of the processing liquid relative to the substrate W. The spraying angle is the horizontal angle relative to the tangent line of the substrate W at the position where the processing liquid sprayed by the processing liquid spraying nozzle 21 is sprayed onto the substrate W.

<臂所進行之轉動角度變更> 在臂5,可藉由移動機構11而以Z軸方向的軸為中心而轉動臂部10。亦即,移動機構11(轉動機構之一例),可使臂部10於水平方向轉動。因此,例如,藉由在處理液之對於基板W的噴吐中,亦即在基板處理中,使臂部10轉動,變更轉動角度,而可變更處理液的相對於基板W之噴吐角度。另,亦可於基板處理中以不使臂部10轉動之方式,施行基板處理。<Change of rotation angle of the arm> In the arm 5, the arm 10 can be rotated around the axis in the Z-axis direction by the moving mechanism 11. That is, the moving mechanism 11 (an example of a rotating mechanism) can rotate the arm 10 in the horizontal direction. Therefore, for example, by rotating the arm 10 and changing the rotation angle during the spraying of the processing liquid to the substrate W, that is, during the substrate processing, the spraying angle of the processing liquid relative to the substrate W can be changed. In addition, the substrate processing can also be performed in a manner that the arm 10 is not rotated during the substrate processing.

此處,參考圖8,針對臂5所進行的處理液之噴吐角度變更處理予以說明。圖8為說明第1實施形態之噴吐角度變更處理的流程圖。噴吐角度變更處理,係使控制裝置6的控制部6b,控制處理液噴吐噴嘴21與固持部3藉以實行。Here, referring to Fig. 8, the spray angle change process of the treatment liquid performed by the arm 5 is described. Fig. 8 is a flow chart for describing the spray angle change process of the first embodiment. The spray angle change process is performed by causing the control unit 6b of the control device 6 to control the treatment liquid spray nozzle 21 and the holding unit 3.

控制部6b,與對於基板W的處理相應而設定臂部10之初始角度(S100)。亦即,控制部6b,與基板處理相應而設定移動機構11(轉動機構之一例)之轉動角度。The control unit 6 b sets the initial angle of the arm unit 10 according to the processing of the substrate W ( S100 ). That is, the control unit 6 b sets the rotation angle of the moving mechanism 11 (an example of a rotation mechanism) according to the processing of the substrate.

控制部6b,與設定之初始角度相應而使臂部10轉動(S101),以初始角度從處理液噴吐噴嘴21開始處理液之噴吐(S102)。亦即,控制部6b,以設定之轉動角度將處理液朝向基板W噴吐。The control unit 6b rotates the arm 10 according to the set initial angle (S101), and starts spraying the processing liquid from the processing liquid spray nozzle 21 at the initial angle (S102). That is, the control unit 6b sprays the processing liquid toward the substrate W at the set rotation angle.

控制部6b,判定是否成為角度變更時序(S103)。例如,控制部6b,判定從開始處理液之噴吐後是否已經過指定的第1時間。指定的第1時間,為預先設定的時間。The control unit 6b determines whether it is the angle change timing (S103). For example, the control unit 6b determines whether a specified first time has passed since the start of the spraying of the treatment liquid. The specified first time is a preset time.

控制部6b,在並非為角度變更時序之情況(S103:No),繼續初始角度的處理液之噴吐(S102)。When it is not the angle change timing (S103: No), the control unit 6b continues to eject the processing liquid at the initial angle (S102).

控制部6b,在成為角度變更時序之情況(S103:Yes),將臂部10的角度設定為指定的變更角度(S104)。指定的變更角度,為預先設定的角度。控制部6b,與設定之指定的變更角度相應而使臂部10轉動(S105)。亦即,控制部6b,在基板處理中變更轉動角度。When the angle change sequence is reached (S103: Yes), the control unit 6b sets the angle of the arm 10 to a designated change angle (S104). The designated change angle is a pre-set angle. The control unit 6b rotates the arm 10 in accordance with the set designated change angle (S105). That is, the control unit 6b changes the rotation angle during substrate processing.

控制部6b,判定是否成為處理結束時序(S106)。例如,控制部6b,判定將臂部10的角度變更為指定的變更角度後,是否已經過指定的第2時間。指定的第2時間,為預先設定的時間。The control unit 6b determines whether it is the processing end timing (S106). For example, the control unit 6b determines whether a designated second time has passed after the angle of the arm 10 is changed to a designated change angle. The designated second time is a preset time.

控制部6b,在並非為處理結束時序之情況(S106:No),繼續指定的變更角度之處理(S105)。控制部6b,在成為處理結束時序之情況(S106:Yes),結束處理液之噴吐(S107)。If the processing end timing is not reached (S106: No), the control unit 6b continues the designated angle change processing (S105). If the processing end timing is reached (S106: Yes), the control unit 6b ends the ejection of the processing liquid (S107).

<效果> 處理液噴吐噴嘴21,具備噴嘴本體部30及連接部32(角度變更機構之一例)。噴嘴本體部30,具備第1本體部35及第2本體部36。於第1本體部35,形成有和處理液供給路20a連通的第1流路35a。於第2本體部36,形成有第2流路36a,對第1本體彎曲。連接部32,對於固定噴嘴本體部30的噴嘴區塊20(固定構件之一例),變更水平方向中之噴嘴本體部30的角度。具體而言,連接部32,可變更對於噴嘴區塊20之安裝位置。<Effect> The treatment liquid spraying nozzle 21 has a nozzle body 30 and a connecting portion 32 (an example of an angle changing mechanism). The nozzle body 30 has a first body 35 and a second body 36. The first body 35 has a first flow path 35a connected to the treatment liquid supply path 20a. The second body 36 has a second flow path 36a bent relative to the first body. The connecting portion 32 changes the angle of the nozzle body 30 in the horizontal direction with respect to the nozzle block 20 (an example of a fixing member) that fixes the nozzle body 30. Specifically, the connecting portion 32 can change the mounting position relative to the nozzle block 20.

藉此,處理液噴吐噴嘴21,可相應於對於基板W之處理,例如基板W上的膜之種類、基板W之噴吐的處理液之種類,而變更處理液之噴吐角度。因此,處理液噴吐噴嘴21,例如,可抑制蝕刻基板W之邊緣所用的處理液噴至基板W而飛散之情形。因而,可抑制飛散出的處理液附著於未施行蝕刻處之情形,可抑制微粒的產生。Thus, the processing liquid spraying nozzle 21 can change the spraying angle of the processing liquid according to the processing of the substrate W, such as the type of film on the substrate W and the type of processing liquid sprayed on the substrate W. Therefore, the processing liquid spraying nozzle 21 can suppress the processing liquid used for etching the edge of the substrate W from being sprayed onto the substrate W and scattered. Therefore, the scattered processing liquid can be suppressed from adhering to the non-etched area, and the generation of particles can be suppressed.

此外,處理液噴吐噴嘴21,具備噴嘴噴吐部31。噴嘴噴吐部31,形成有和第2流路36a連通的噴吐流路31b,將處理液噴吐至基板W。此外,噴嘴噴吐部31,可於第2本體部36之前端裝卸。The process liquid ejecting nozzle 21 includes a nozzle ejecting unit 31 . The nozzle ejecting unit 31 has an ejection flow path 31 b communicating with the second flow path 36 a and ejects the process liquid onto the substrate W. The nozzle ejecting unit 31 is detachable from the front end of the second body 36 .

藉此,處理液噴吐噴嘴21,可與對於基板W的處理相應而更換噴嘴噴吐部31。因此,處理液噴吐噴嘴21,例如可高精度地蝕刻基板W之邊緣。此外,例如,在處理液阻塞於噴嘴噴吐部31的噴吐口31d之情況,藉由更換噴嘴噴吐部31,而可簡單地恢復基板處理。Thus, the processing liquid ejecting nozzle 21 can replace the nozzle discharge unit 31 in accordance with the processing of the substrate W. Therefore, the processing liquid ejecting nozzle 21 can, for example, etch the edge of the substrate W with high precision. In addition, for example, in the case where the processing liquid is clogged in the ejection port 31d of the nozzle discharge unit 31, the substrate processing can be easily resumed by replacing the nozzle discharge unit 31.

此外,處理液噴吐噴嘴21,可將處理液從第1流路35a往第2流路36a流動時產生的氣泡,在處理液於噴吐流路31b流動之間減少。因此,處理液噴吐噴嘴21,可抑制噴吐至基板W的處理液包含氣泡之情形,可使處理液之噴吐狀態穩定化。In addition, the processing liquid spraying nozzle 21 can reduce bubbles generated when the processing liquid flows from the first flow path 35a to the second flow path 36a while the processing liquid flows in the spraying flow path 31b. Therefore, the processing liquid spraying nozzle 21 can suppress the processing liquid sprayed onto the substrate W from containing bubbles, and can stabilize the spraying state of the processing liquid.

此外,噴吐流路31b之直徑,較第2流路36a之直徑更小。In addition, the diameter of the ejection flow path 31b is smaller than the diameter of the second flow path 36a.

藉此,處理液噴吐噴嘴21,可在處理液從第2流路36a流入噴吐流路31b時,抑制氣泡的產生。因此,處理液噴吐噴嘴21,可抑制噴吐至基板W的處理液包含氣泡之情形,可使處理液之噴吐狀態穩定化。Thus, the processing liquid spray nozzle 21 can suppress the generation of bubbles when the processing liquid flows from the second flow path 36a into the spray flow path 31b. Therefore, the processing liquid spray nozzle 21 can suppress the processing liquid sprayed onto the substrate W from containing bubbles, and can stabilize the spraying state of the processing liquid.

此外,臂5(噴嘴臂之一例),具備處理液噴吐噴嘴21、噴嘴區塊20(固定構件之一例)、臂部10、及移動機構11(轉動機構之一例)。於臂部10,安裝有固定構件。移動機構11,使臂部10於水平方向轉動。基板處理裝置1,與基板處理相應而設定移動機構11之轉動角度,以設定之轉動角度將處理液朝向基板W噴吐。In addition, the arm 5 (an example of a nozzle arm) has a treatment liquid spraying nozzle 21, a nozzle block 20 (an example of a fixed component), an arm 10, and a moving mechanism 11 (an example of a rotating mechanism). The arm 10 is mounted with a fixed component. The moving mechanism 11 rotates the arm 10 in a horizontal direction. The substrate processing device 1 sets the rotation angle of the moving mechanism 11 according to the substrate processing, and sprays the treatment liquid toward the substrate W at the set rotation angle.

藉此,基板處理裝置1,能夠以與基板處理相應之噴吐角度噴吐處理液,可高精度地蝕刻基板W之邊緣。Thereby, the substrate processing apparatus 1 can spray the processing liquid at a spray angle corresponding to the substrate processing, and can etch the edge of the substrate W with high precision.

此外,基板處理裝置1,在基板處理中變更轉動角度。Furthermore, the substrate processing apparatus 1 changes the rotation angle during substrate processing.

藉此,基板處理裝置1,可將處理液均一地噴吐至基板W之邊緣,可高精度地蝕刻基板W之邊緣。Thereby, the substrate processing apparatus 1 can uniformly spray the processing liquid to the edge of the substrate W, and can etch the edge of the substrate W with high precision.

(第2實施形態) 接著,針對第2實施形態之基板處理裝置1予以說明。第2實施形態之基板處理裝置1,相對於第1實施形態之基板處理裝置1,使處理液供給部50不同。因此,此處,針對第2實施形態之處理液供給部50予以說明。另,對與第1實施形態之處理液供給部12相同的部位,賦予相同符號,省略詳細的說明。(Second embodiment) Next, the substrate processing apparatus 1 of the second embodiment is described. The substrate processing apparatus 1 of the second embodiment has a different processing liquid supply unit 50 from the substrate processing apparatus 1 of the first embodiment. Therefore, the processing liquid supply unit 50 of the second embodiment is described here. In addition, the same symbols are given to the same parts as the processing liquid supply unit 12 of the first embodiment, and detailed descriptions are omitted.

<處理液供給部> 於處理液供給部50的噴嘴區塊51,如圖9所示,對1個處理液噴吐噴嘴52設置1個貫通孔20e。圖9為第2實施形態之處理液供給部50的俯視圖。另,圖9之處理液供給部50,係設置於右臂5R之處理液供給部50。<Processing liquid supply unit> In the nozzle block 51 of the processing liquid supply unit 50, as shown in FIG9, a through hole 20e is provided for a processing liquid spray nozzle 52. FIG9 is a top view of the processing liquid supply unit 50 of the second embodiment. In addition, the processing liquid supply unit 50 of FIG9 is a processing liquid supply unit 50 provided on the right arm 5R.

處理液噴吐噴嘴52,如圖10及圖11所示,將噴嘴本體部53、連接部54分開而設置。圖10為第2實施形態之處理液噴吐噴嘴52的俯視圖。圖11為圖10的XI-XI剖面圖。As shown in Fig. 10 and Fig. 11, the treatment liquid spraying nozzle 52 is provided by separating the nozzle body 53 and the connection part 54. Fig. 10 is a top view of the treatment liquid spraying nozzle 52 of the second embodiment. Fig. 11 is a cross-sectional view taken along line XI-XI of Fig. 10.

於第1本體部55,如圖11所示,形成卡合溝55a。卡合溝55a,形成於較導入部35b更為下方。卡合溝55a,涵蓋第1本體部55全周地形成。藉由形成卡合溝55a,而在第1本體部55,於導入部35b與卡合溝55a之間形成卡合部55b。卡合部55b的外壁面之直徑,較導入部35b的外壁面之直徑更大。As shown in FIG. 11 , the first body portion 55 is formed with an engagement groove 55a. The engagement groove 55a is formed below the introduction portion 35b. The engagement groove 55a is formed to cover the entire circumference of the first body portion 55. By forming the engagement groove 55a, an engagement portion 55b is formed between the introduction portion 35b and the engagement groove 55a in the first body portion 55. The diameter of the outer wall surface of the engagement portion 55b is larger than the diameter of the outer wall surface of the introduction portion 35b.

連接部54,具備一對腕部54a。一對腕部54a,插入至卡合溝55a,夾持第1本體部55。第1本體部55,可在夾持於一對腕部54a的狀態中,於水平方向轉動。亦即,連接部54(角度變更機構之一例),將第1本體部55以可轉動之方式支持。此外,腕部54a之頂面,抵接於第1本體部55之卡合部55b。亦即,一對腕部54a,與卡合部55b卡合。The connecting portion 54 has a pair of arm portions 54a. The pair of arm portions 54a are inserted into the engaging groove 55a to clamp the first body portion 55. The first body portion 55 can rotate in the horizontal direction while being clamped by the pair of arm portions 54a. That is, the connecting portion 54 (an example of an angle changing mechanism) supports the first body portion 55 in a rotatable manner. In addition, the top surface of the arm portion 54a abuts against the engaging portion 55b of the first body portion 55. That is, the pair of arm portions 54a are engaged with the engaging portion 55b.

此外,於第1本體部55及連接部54,如圖12所示,設置對準部60。圖12為從斜下方觀察第2實施形態之處理液噴吐噴嘴52的立體圖。對準部60,包含第1對準溝60a及第2對準溝60b。Furthermore, the first body portion 55 and the connecting portion 54 are provided with an alignment portion 60 as shown in Fig. 12. Fig. 12 is a perspective view of the treatment liquid ejection nozzle 52 of the second embodiment as viewed from obliquely below. The alignment portion 60 includes a first alignment groove 60a and a second alignment groove 60b.

第1對準溝60a,形成於第1本體部55。第1對準溝60a,形成於較卡合溝55a(參考圖11)更為下方的第1本體部55。第1對準溝60a,於第1本體部55的外壁面形成複數條。具體而言,第1對準溝60a,沿著第1本體部55的圓周方向形成複數條。The first alignment groove 60a is formed in the first body portion 55. The first alignment groove 60a is formed in the first body portion 55 below the engagement groove 55a (see FIG. 11). A plurality of first alignment grooves 60a are formed on the outer wall surface of the first body portion 55. Specifically, a plurality of first alignment grooves 60a are formed along the circumferential direction of the first body portion 55.

第2對準溝60b,形成於連接部54。例如,第2對準溝60b,亦可形成為於Z軸方向貫通連接部54。The second alignment groove 60b is formed in the connecting portion 54. For example, the second alignment groove 60b may be formed to penetrate the connecting portion 54 in the Z-axis direction.

若藉由螺栓22將連接部54固定於噴嘴區塊51,則噴嘴本體部53,如圖13所示,於Z軸方向中,藉由連接部54的腕部54a、與噴嘴區塊51,夾持第1本體部55之卡合部55b。藉此,將噴嘴本體部53,對噴嘴區塊51固定。圖13為圖9的XIII-XIII剖面圖。When the connection part 54 is fixed to the nozzle block 51 by the bolt 22, the nozzle body 53, as shown in FIG13, clamps the engaging part 55b of the first body 55 in the Z-axis direction by the arm part 54a of the connection part 54 and the nozzle block 51. In this way, the nozzle body 53 is fixed to the nozzle block 51. FIG13 is a cross-sectional view taken along the line XIII-XIII of FIG9.

<處理液噴吐噴嘴所進行的處理液之噴吐角度變更> 噴嘴本體部53,在並未藉由螺栓22固定於噴嘴區塊51之狀態下,可使第1本體部55,對於連接部54往水平方向轉動。例如,處理液噴吐噴嘴52,藉由變更第1本體部55的第1對準溝60a,與連接部54的第2對準溝60b所對準之位置,而可變更處理液的相對於噴嘴區塊51之噴吐角度。亦即,噴嘴本體部53及連接部54,具備對準部60,該對準部60對於噴嘴區塊51(固定構件之一例),變更水平方向中之噴嘴本體部53的角度。<Change in the spraying angle of the processing liquid by the processing liquid spraying nozzle> When the nozzle body 53 is not fixed to the nozzle block 51 by the bolt 22, the first body 55 can be rotated in the horizontal direction relative to the connecting portion 54. For example, the processing liquid spraying nozzle 52 can change the spraying angle of the processing liquid relative to the nozzle block 51 by changing the position of the first alignment groove 60a of the first body 55 and the second alignment groove 60b of the connecting portion 54. That is, the nozzle body 53 and the connecting portion 54 include an aligning portion 60, and the aligning portion 60 changes the angle of the nozzle body 53 in the horizontal direction with respect to the nozzle block 51 (an example of a fixing member).

<效果> 在處理液噴吐噴嘴52中,連接部54(角度變更機構之一例),將第1本體部55以可轉動之方式支持。<Effect> In the treatment liquid spray nozzle 52, the connecting portion 54 (an example of an angle changing mechanism) supports the first main body portion 55 in a rotatable manner.

藉此,處理液噴吐噴嘴52,可相應於對於基板W的處理,例如基板W上的膜之種類、基板W之噴吐的處理液之種類,而變更處理液之噴吐角度。因此,可抑制微粒的產生。Thus, the processing liquid spraying nozzle 52 can change the spraying angle of the processing liquid according to the processing of the substrate W, for example, the type of film on the substrate W and the type of processing liquid sprayed on the substrate W. Therefore, the generation of particles can be suppressed.

此外,第1本體部55及連接部54,具備對準部60。對準部60,對於噴嘴區塊51(固定構件之一例),變更水平方向中之噴嘴本體部53的角度。Furthermore, the first body portion 55 and the connecting portion 54 include an alignment portion 60. The alignment portion 60 changes the angle of the nozzle body portion 53 in the horizontal direction with respect to the nozzle block 51 (an example of a fixing member).

藉此,操作者,依據對準部60,可對於固定在噴嘴區塊51之連接部54,簡單地配合水平方向中之第1本體部55的角度。因此,操作者,可簡單地設定處理液之噴吐角度。Thus, the operator can simply adjust the angle of the first body 55 in the horizontal direction with respect to the connecting portion 54 fixed to the nozzle block 51 according to the alignment portion 60. Therefore, the operator can simply set the spraying angle of the processing liquid.

<第2實施形態的變形例> 變形例之處理液噴吐噴嘴52,作為對準部60,亦可於第1本體部55及連接部54之一方,設置對準溝,於第1本體部55及連接部54之另一方,設置插入至對準溝的突出片。<Variation of the second embodiment> The treatment liquid spray nozzle 52 of the variation may also be provided with an alignment groove as the alignment portion 60 on one of the first body portion 55 and the connecting portion 54, and a protruding piece inserted into the alignment groove on the other of the first body portion 55 and the connecting portion 54.

藉此,變形例之處理液噴吐噴嘴52,可抑制第1本體部55對於連接部54轉動。因此,變形例之處理液噴吐噴嘴52,可抑制處理液之噴吐角度,從設定之噴吐角度偏移。Thereby, the processing liquid spraying nozzle 52 of the modified example can suppress the first body portion 55 from rotating relative to the connecting portion 54. Therefore, the processing liquid spraying nozzle 52 of the modified example can suppress the spraying angle of the processing liquid from deviating from the set spraying angle.

(第3實施形態) 接著,針對第3實施形態之基板處理裝置1予以說明。第3實施形態之基板處理裝置1,相對於第2實施形態之基板處理裝置1,使處理液供給部70不同。因此,此處,針對第3實施形態之處理液供給部70予以說明。另,對與第1實施形態之處理液供給部12、第2實施形態之處理液供給部50相同的部位,賦予相同符號,省略詳細的說明。(Third embodiment) Next, the substrate processing apparatus 1 of the third embodiment is described. The substrate processing apparatus 1 of the third embodiment has a different processing liquid supply unit 70 from the substrate processing apparatus 1 of the second embodiment. Therefore, the processing liquid supply unit 70 of the third embodiment is described here. In addition, the same symbols are given to the same parts as the processing liquid supply unit 12 of the first embodiment and the processing liquid supply unit 50 of the second embodiment, and detailed descriptions are omitted.

<處理液供給部> 處理液供給部70,如圖14所示,進一步具備氣體噴吐噴嘴71。圖14為第3實施形態之處理液供給部70的俯視圖。另,圖14之處理液供給部70,係設置於左臂5L之處理液供給部70。<Processing liquid supply unit> The processing liquid supply unit 70, as shown in FIG14, further has a gas spray nozzle 71. FIG14 is a top view of the processing liquid supply unit 70 of the third embodiment. In addition, the processing liquid supply unit 70 of FIG14 is a processing liquid supply unit 70 provided on the left arm 5L.

氣體噴吐噴嘴71,安裝於噴嘴區塊51。氣體噴吐噴嘴71,配置於較處理液噴吐噴嘴52更為內側。具體而言,氣體噴吐噴嘴71,在基板W之徑方向中,配置於較處理液噴吐噴嘴52更為內側。The gas spray nozzle 71 is installed in the nozzle block 51. The gas spray nozzle 71 is arranged inside the process liquid spray nozzle 52. Specifically, the gas spray nozzle 71 is arranged inside the process liquid spray nozzle 52 in the radial direction of the substrate W.

氣體噴吐噴嘴71,朝向外側噴吐氣體,例如氮氣。氣體噴吐噴嘴71,噴吐將噴至基板W而往基板W之上方飛散的處理液往較基板W更外側排出的氣體。The gas spray nozzle 71 sprays gas, such as nitrogen, toward the outside. The gas spray nozzle 71 sprays gas that discharges the processing liquid sprayed onto the substrate W and scattered above the substrate W toward the outside of the substrate W.

氣體噴吐噴嘴71,以較水平方向中的處理液之噴吐角度更大之噴吐角度噴吐氣體。具體而言,氣體噴吐噴嘴71,如圖15所示,以對於由處理液噴吐噴嘴52噴吐出的處理液噴至基板W之位置T中的相對於基板W之切線S的處理液之噴吐角度A1,較噴吐角度A1更大之噴吐角度A2噴吐氣體。亦即,氣體噴吐噴嘴71,以較水平方向中之處理液的相對於基板切線之噴吐角度A1更大之噴吐角度A2,噴吐氣體。圖15為說明第3實施形態之處理液噴吐噴嘴52及氣體噴吐噴嘴71的配置之示意圖。The gas spray nozzle 71 sprays gas at a spray angle larger than the spray angle of the processing liquid in the horizontal direction. Specifically, as shown in FIG. 15 , the gas spray nozzle 71 sprays gas at a spray angle A2 larger than the spray angle A1 of the processing liquid relative to the tangent line S of the substrate W at the position T where the processing liquid is sprayed from the processing liquid spray nozzle 52 and sprayed onto the substrate W. That is, the gas spray nozzle 71 sprays gas at a spray angle A2 larger than the spray angle A1 of the processing liquid relative to the tangent line S of the substrate in the horizontal direction. FIG. 15 is a schematic diagram for explaining the arrangement of the processing liquid spray nozzle 52 and the gas spray nozzle 71 according to the third embodiment.

此外,氣體噴吐噴嘴71,朝向較基板W更為上方噴吐氣體。具體而言,氣體噴吐噴嘴71,朝向由處理液噴吐噴嘴52噴吐出的處理液噴至基板W之位置的上方,噴吐氣體。另,氣體噴吐噴嘴71,亦可朝向相較於由處理液噴吐噴嘴52噴吐出的處理液噴至基板W之位置,在基板W的旋轉方向中略下游側之上方,噴吐氣體。In addition, the gas spray nozzle 71 sprays gas toward the upper side of the substrate W. Specifically, the gas spray nozzle 71 sprays gas toward the upper side of the position where the processing liquid sprayed from the processing liquid spray nozzle 52 is sprayed onto the substrate W. Alternatively, the gas spray nozzle 71 may spray gas toward the upper side slightly downstream of the position where the processing liquid sprayed from the processing liquid spray nozzle 52 is sprayed onto the substrate W in the rotation direction of the substrate W.

<效果> 處理液供給部70,亦即臂5,具備氣體噴吐噴嘴71。氣體噴吐噴嘴71,噴吐將噴至基板W而往基板W之上方飛散的處理液,往較基板W更外側排出的氣體。<Effect> The processing liquid supply unit 70, that is, the arm 5, has a gas spray nozzle 71. The gas spray nozzle 71 sprays the processing liquid sprayed onto the substrate W and scattered above the substrate W, and exhausts the gas to the outside of the substrate W.

藉此,臂5,可抑制噴至基板W而飛散出的處理液,附著於基板W之徑方向內側的情形。因此,臂5,可抑制飛散出的處理液附著於未施行蝕刻之處的情形,可抑制微粒的產生。Thus, the arm 5 can prevent the scattered processing liquid sprayed onto the substrate W from adhering to the radial inner side of the substrate W. Therefore, the arm 5 can prevent the scattered processing liquid from adhering to the non-etched area, thereby preventing the generation of particles.

此外,氣體噴吐噴嘴71,配置於較處理液噴吐噴嘴52更為內側。In addition, the gas spray nozzle 71 is disposed on the inner side of the process liquid spray nozzle 52.

藉此,氣體噴吐噴嘴71,可將噴至基板W而飛散出的處理液,朝向基板W的外側排出。因此,臂5,可抑制飛散出的處理液附著於未施行蝕刻之處的情形,可抑制微粒的產生。Thereby, the gas spray nozzle 71 can discharge the processing liquid sprayed onto the substrate W and scattered toward the outside of the substrate W. Therefore, the arm 5 can suppress the scattered processing liquid from adhering to the non-etched portion, and can suppress the generation of particles.

此外,氣體噴吐噴嘴71,以較水平方向中的處理液之噴吐角度更大之噴吐角度,噴吐氣體。In addition, the gas spray nozzle 71 sprays the gas at a spray angle larger than the spray angle of the processing liquid in the horizontal direction.

藉此,臂5,可將剛噴至基板W而飛散出的處理液,朝向基板W之外側排出。因此,臂5,可抑制飛散出的處理液附著於未施行蝕刻之處的情形,可抑制微粒的產生。Thereby, the arm 5 can discharge the scattered processing liquid just sprayed onto the substrate W toward the outside of the substrate W. Therefore, the arm 5 can suppress the scattered processing liquid from adhering to the place where etching is not performed, and can suppress the generation of particles.

此外,氣體噴吐噴嘴71,朝向較基板W更為上方噴吐氣體。In addition, the gas spray nozzle 71 sprays gas toward the upper side of the substrate W.

藉此,臂5,例如,抑制噴吐至基板W之邊緣而附著於基板W之邊緣的處理液往基板W之外側排出的情形,可促進基板W之邊緣的蝕刻處理。Thereby, the arm 5 can, for example, suppress the processing liquid sprayed to the edge of the substrate W and attached to the edge of the substrate W from being discharged to the outside of the substrate W, thereby promoting the etching process of the edge of the substrate W.

(第4實施形態) 接著,參考圖16~圖18,針對第4實施形態之基板處理裝置1予以說明。此處,以與第1實施形態之基板處理裝置1不同處為中心而說明,對與第1實施形態之基板處理裝置1相同的部位,賦予相同符號,省略詳細的說明。圖16為顯示第4實施形態之基板處理裝置1的一部分之立體圖。圖17為第4實施形態之基板處理裝置1中,處理液噴吐噴嘴21位於待機位置的狀態之示意圖。圖18為第4實施形態之基板處理裝置1中,處理液噴吐噴嘴21位於噴吐位置的狀態之示意圖。另,此處,將右臂5R側作為一例而說明,但於左臂5L側中亦具有同樣的構成。(Fourth embodiment) Next, referring to Figs. 16 to 18, the substrate processing apparatus 1 of the fourth embodiment will be described. Here, the description will focus on the differences from the substrate processing apparatus 1 of the first embodiment, and the same symbols are given to the same parts as the substrate processing apparatus 1 of the first embodiment, and detailed descriptions are omitted. Fig. 16 is a three-dimensional diagram showing a part of the substrate processing apparatus 1 of the fourth embodiment. Fig. 17 is a schematic diagram of the substrate processing apparatus 1 of the fourth embodiment, in which the processing liquid spray nozzle 21 is located at the standby position. Fig. 18 is a schematic diagram of the substrate processing apparatus 1 of the fourth embodiment, in which the processing liquid spray nozzle 21 is located at the spraying position. In addition, here, the right arm 5R side is described as an example, but the left arm 5L side also has the same structure.

基板處理裝置1,進一步具備第1導通部90及第2導通部91。第1導通部90,與處理液噴吐噴嘴21接觸,和處理液噴吐噴嘴21導通。第1導通部90,安裝於處理液噴吐噴嘴21。例如,第1導通部90,安裝於處理液噴吐噴嘴21的第1本體部35。第1導通部90,為導電性構件,例如為含碳之樹脂。第1導通部90,與處理液噴吐噴嘴21一同移動。處理液噴吐噴嘴21及第1導通部90,藉由移動機構11(參考圖1)而沿著X方向(參考圖1)移動。The substrate processing device 1 further includes a first conductive portion 90 and a second conductive portion 91. The first conductive portion 90 is in contact with the processing liquid spray nozzle 21 and is conductively connected to the processing liquid spray nozzle 21. The first conductive portion 90 is mounted on the processing liquid spray nozzle 21. For example, the first conductive portion 90 is mounted on the first body portion 35 of the processing liquid spray nozzle 21. The first conductive portion 90 is a conductive member, such as a carbon-containing resin. The first conductive portion 90 moves together with the processing liquid spray nozzle 21. The processing liquid spray nozzle 21 and the first conductive portion 90 are moved along the X direction (refer to FIG. 1) by the moving mechanism 11 (refer to FIG. 1).

於第1導通部90,形成第1本體部35可滑動的孔。亦即,基板處理裝置1,可在使處理液噴吐噴嘴21接觸第1導通部90的狀態下,使處理液噴吐噴嘴21,對於噴嘴區塊20轉動,可變更處理液的相對於噴嘴區塊20之噴吐角度。第1導通部90,藉由將2個以上的構件合併而形成孔。亦即,第1導通部90,藉由將2個以上的構件組合而構成。另,第1導通部90,亦可由1個構件構成。例如,第1導通部90,亦可形成有和孔連通的缺口,經由缺口而將第1本體部35插入至孔。A hole is formed in the first conductive portion 90 through which the first main body 35 can slide. That is, the substrate processing device 1 can change the spray angle of the processing liquid relative to the nozzle block 20 by rotating the processing liquid spray nozzle 21 with respect to the nozzle block 20 when the processing liquid spray nozzle 21 is in contact with the first conductive portion 90. The first conductive portion 90 forms a hole by combining two or more components. That is, the first conductive portion 90 is formed by combining two or more components. In addition, the first conductive portion 90 may also be formed by one component. For example, the first conductive portion 90 may also be formed with a notch connected to the hole, and the first main body 35 is inserted into the hole through the notch.

第2導通部91,與第1導通部90接觸,藉以和處理液噴吐噴嘴21導通,將處理液噴吐噴嘴21電性中和。第2導通部91為導電性構件,例如為含碳的膜。第2導通部91,設置於外側杯4(杯部之一例)。第2導通部91,具備本體部91a與變形部91b。The second conductive part 91 is in contact with the first conductive part 90 to be conductive with the process liquid spray nozzle 21 to electrically neutralize the process liquid spray nozzle 21. The second conductive part 91 is a conductive member, such as a carbon-containing film. The second conductive part 91 is provided on the outer cup 4 (an example of a cup part). The second conductive part 91 has a main body 91a and a deformable part 91b.

本體部91a,沿著外側杯4之頂面而設置。本體部91a,設置為一方的端部與外側杯4的缺口部4a鄰接。此外,本體部91a,使另一方的端部,連接至處理容器2(參考圖1)之外部的導電性構件(例如金屬構件)。另,本體部91a,亦可經由中間構件而與處理容器2之外部的導電性構件連接。中間構件,為導電性構件。The body 91a is disposed along the top surface of the outer cup 4. The body 91a is disposed so that one end thereof is adjacent to the notch 4a of the outer cup 4. In addition, the body 91a is connected at the other end thereof to a conductive member (e.g., a metal member) outside the processing container 2 (see FIG. 1 ). In addition, the body 91a may also be connected to a conductive member outside the processing container 2 via an intermediate member. The intermediate member is a conductive member.

變形部91b,與本體部91a相連接。變形部91b,設置為從本體部91a之一方的端部於缺口部4a側往斜上方延伸。變形部91b,在基板W之徑方向中,設置為從本體部91a朝向內側突出。亦即,變形部91b,以懸臂之狀態支持在本體部91a。變形部91b,可和第1導通部90接觸。變形部91b,對本體部91a彈性變形。另,變形部91b,並未限定於以懸臂之狀態支持在本體部91a的形狀,使其對本體部91a彈性變形即可。The deformable portion 91b is connected to the main body 91a. The deformable portion 91b is arranged to extend obliquely upward from one end of the main body 91a on the side of the notch portion 4a. The deformable portion 91b is arranged to protrude inward from the main body 91a in the radial direction of the substrate W. That is, the deformable portion 91b is supported on the main body 91a in a cantilevered state. The deformable portion 91b can be in contact with the first conductive portion 90. The deformable portion 91b is elastically deformed with respect to the main body 91a. In addition, the deformable portion 91b is not limited to a shape supported on the main body 91a in a cantilevered state, and it is sufficient to be elastically deformed with respect to the main body 91a.

變形部91b,在第1導通部90位於接觸位置的情況,和第1導通部90接觸。變形部91b,在第1導通部90位於非接觸位置的情況,未和第1導通部90接觸。The deformed portion 91b is in contact with the first conductive portion 90 when the first conductive portion 90 is in the contact position. The deformed portion 91b is not in contact with the first conductive portion 90 when the first conductive portion 90 is in the non-contact position.

接觸位置,例如包含待機位置。變形部91b,在處理液噴吐噴嘴21位於待機位置的情況,和第1導通部90接觸。在處理液噴吐噴嘴21位於待機位置的情況,和第1導通部90與第2導通部91接觸,形成從處理液噴吐噴嘴21至處理容器2之外部的導電性構件之導通路徑。藉由使處理液噴吐噴嘴21與處理容器2之外部的導電性構件導通,而將處理液噴吐噴嘴21電性中和。The contact position includes, for example, a standby position. When the processing liquid spray nozzle 21 is in the standby position, the deformed portion 91b contacts the first conductive portion 90. When the processing liquid spray nozzle 21 is in the standby position, the deformed portion 91b contacts the first conductive portion 90 and the second conductive portion 91 to form a conductive path from the processing liquid spray nozzle 21 to the conductive member outside the processing container 2. By making the processing liquid spray nozzle 21 conductive with the conductive member outside the processing container 2, the processing liquid spray nozzle 21 is electrically neutralized.

非接觸位置,例如包含噴吐位置。變形部91b,在處理液噴吐噴嘴21位於噴吐位置的情況,未和第1導通部90接觸。亦即,在處理液噴吐噴嘴21位於噴吐位置的情況,第1導通部90與第2導通部91並未接觸,未形成從處理液噴吐噴嘴21至處理容器2之外部的導電性構件之導通路徑。The non-contact position includes, for example, the spraying position. When the process liquid spray nozzle 21 is at the spraying position, the deformed portion 91b is not in contact with the first conductive portion 90. That is, when the process liquid spray nozzle 21 is at the spraying position, the first conductive portion 90 and the second conductive portion 91 are not in contact, and a conductive path from the process liquid spray nozzle 21 to the conductive member outside the process container 2 is not formed.

第1導通部90,藉由移動機構11(參考圖1),而與處理液噴吐噴嘴21一同移動。亦即,移動機構11,將處理液噴吐噴嘴21及第1導通部90之位置,在第1導通部90與第2導通部91接觸之接觸位置、和第1導通部90與第2導通部91不接觸之非接觸位置切換。The first conductive portion 90 is moved together with the processing liquid ejection nozzle 21 by the moving mechanism 11 (see FIG. 1 ). That is, the moving mechanism 11 switches the position of the processing liquid ejection nozzle 21 and the first conductive portion 90 between a contact position where the first conductive portion 90 is in contact with the second conductive portion 91 and a non-contact position where the first conductive portion 90 is not in contact with the second conductive portion 91.

若處理液噴吐噴嘴21從非接觸位置(噴吐位置)移動至接觸位置(待機位置),則第1導通部90與第2導通部91之變形部91b接觸。變形部91b,受到第1導通部90推壓,以本體部91a側為支點而轉動,從未和第1導通部90接觸的位置(下稱「初始位置」)變形。藉此,抑制第1導通部90與第2導通部91接觸時之衝撃。此外,變形部91b,對本體部91a彈性變形,故維持第1導通部90與第2導通部91之接觸狀態。When the treatment liquid spray nozzle 21 moves from the non-contact position (spraying position) to the contact position (standby position), the first conductive part 90 contacts the deformable part 91b of the second conductive part 91. The deformable part 91b is pushed by the first conductive part 90, rotates with the side of the main body 91a as a fulcrum, and deforms from a position (hereinafter referred to as the "initial position") where it is not in contact with the first conductive part 90. In this way, the impact when the first conductive part 90 contacts the second conductive part 91 is suppressed. In addition, the deformable part 91b elastically deforms with respect to the main body 91a, so that the contact state between the first conductive part 90 and the second conductive part 91 is maintained.

若處理液噴吐噴嘴21,從接觸位置(待機位置)移動至非接觸位置(噴吐位置),則第1導通部90與第2導通部91之變形部91b分隔。第2導通部91之變形部91b,未受到第1導通部90推壓,故以本體部91a側為支點而轉動,返回初始位置。When the treatment liquid spray nozzle 21 moves from the contact position (standby position) to the non-contact position (spraying position), the first conductive portion 90 is separated from the deformed portion 91b of the second conductive portion 91. The deformed portion 91b of the second conductive portion 91 is not pressed by the first conductive portion 90, so it rotates with the body portion 91a side as a fulcrum and returns to the initial position.

<效果> 由於處理液噴吐噴嘴21帶電,故有從處理液噴吐噴嘴21噴吐出的處理液附著於處理液噴吐噴嘴21之情形。有附著於處理液噴吐噴嘴21的處理液往基板W等滴下,而產生微粒之疑慮。此外,有從處理液噴吐噴嘴21噴吐出的處理液,被吸引至處理液噴吐噴嘴21側,往基板W等滴下,而產生微粒之疑慮。<Effect> Since the processing liquid ejection nozzle 21 is charged, the processing liquid ejected from the processing liquid ejection nozzle 21 may adhere to the processing liquid ejection nozzle 21. There is a concern that the processing liquid attached to the processing liquid ejection nozzle 21 drips onto the substrate W, etc., and particles are generated. In addition, there is a concern that the processing liquid ejected from the processing liquid ejection nozzle 21 is attracted to the side of the processing liquid ejection nozzle 21 and drips onto the substrate W, etc., and particles are generated.

基板處理裝置1,具備處理液噴吐噴嘴21、第1導通部90、第2導通部91、及移動機構11。第1導通部90,與處理液噴吐噴嘴21接觸,和處理液噴吐噴嘴21導通。第2導通部91,與第1導通部90接觸藉以和處理液噴吐噴嘴21導通,將處理液噴吐噴嘴21電性中和。移動機構11,將處理液噴吐噴嘴21及第1導通部90之位置,在第1導通部90與第2導通部91接觸之接觸位置、和第1導通部90與第2導通部91不接觸之非接觸位置切換。The substrate processing device 1 includes a processing liquid spray nozzle 21, a first conductive portion 90, a second conductive portion 91, and a moving mechanism 11. The first conductive portion 90 contacts the processing liquid spray nozzle 21 and is electrically connected to the processing liquid spray nozzle 21. The second conductive portion 91 contacts the first conductive portion 90 and is electrically connected to the processing liquid spray nozzle 21, thereby electrically neutralizing the processing liquid spray nozzle 21. The moving mechanism 11 switches the positions of the processing liquid spray nozzle 21 and the first conductive portion 90 between a contact position where the first conductive portion 90 contacts the second conductive portion 91 and a non-contact position where the first conductive portion 90 and the second conductive portion 91 do not contact.

藉此,基板處理裝置1,藉由在接觸位置中使第1導通部90與第2導通部91接觸,而可抑制處理液噴吐噴嘴21的帶電。因此,基板處理裝置1,可抑制處理液之往處理液噴吐噴嘴21的附著。此外,基板處理裝置1,可抑制從處理液噴吐噴嘴21噴吐出的處理液被吸引至處理液噴吐噴嘴21之情形。因而,基板處理裝置1,可抑制微粒的產生。Thus, the substrate processing apparatus 1 can suppress the charging of the processing liquid spray nozzle 21 by making the first conductive portion 90 contact the second conductive portion 91 at the contact position. Therefore, the substrate processing apparatus 1 can suppress the adhesion of the processing liquid to the processing liquid spray nozzle 21. In addition, the substrate processing apparatus 1 can suppress the processing liquid sprayed from the processing liquid spray nozzle 21 from being attracted to the processing liquid spray nozzle 21. Therefore, the substrate processing apparatus 1 can suppress the generation of particles.

第2導通部91,具備變形部91b。變形部91b,在與第1導通部90接觸之情況下變形。The second conductive portion 91 includes a deformed portion 91 b. The deformed portion 91 b is deformed when in contact with the first conductive portion 90.

藉此,基板處理裝置1,可抑制第1導通部90與第2導通部91接觸時之衝撃。因此,基板處理裝置1,可抑制第1導通部90及第2導通部91之劣化。此外,基板處理裝置1,藉由使變形部91b變形,而可於接觸位置中將第1導通部90與第2導通部91維持為接觸狀態。Thus, the substrate processing apparatus 1 can suppress the impact when the first conductive portion 90 and the second conductive portion 91 are in contact. Therefore, the substrate processing apparatus 1 can suppress the degradation of the first conductive portion 90 and the second conductive portion 91. In addition, the substrate processing apparatus 1 can maintain the first conductive portion 90 and the second conductive portion 91 in a contact state at the contact position by deforming the deformable portion 91b.

基板處理裝置1,具備固持部3與外側杯4(杯部之一例)。固持部3,在施行基板處理之情況,固持基板W。外側杯4,設置為圍繞固持部3所固持的基板W之外側。第2導通部91,設置於外側杯4。The substrate processing device 1 includes a holding portion 3 and an outer cup 4 (an example of a cup portion). The holding portion 3 holds a substrate W when performing substrate processing. The outer cup 4 is provided to surround the outer side of the substrate W held by the holding portion 3. The second conductive portion 91 is provided on the outer cup 4.

藉此,在基板處理裝置1,使第2導通部91之配置變得簡單。Thus, in the substrate processing apparatus 1, the arrangement of the second conductive portion 91 is simplified.

<第4實施形態的變形例> 變形例之基板處理裝置1,亦可於第1導通部90具備變形部,亦可於第1導通部90及第2導通部91具備變形部。亦即,第1導通部90及第2導通部91之至少一方的導通部,具備在與另一方的導通部接觸之情況下變形的變形部。<Variation of the fourth embodiment> The substrate processing apparatus 1 of the variation may also include a deformable portion in the first conductive portion 90, or may include a deformable portion in the first conductive portion 90 and the second conductive portion 91. That is, at least one of the first conductive portion 90 and the second conductive portion 91 includes a deformable portion that deforms when in contact with the other conductive portion.

藉此,變形例之基板處理裝置1,可抑制第1導通部90與第2導通部91接觸時之衝撃。因此,變形例之基板處理裝置1,可抑制第1導通部90及第2導通部91之劣化。此外,變形例之基板處理裝置1,藉由使變形部變形,而可於接觸位置中將第1導通部90與第2導通部91維持為接觸狀態。Thus, the substrate processing apparatus 1 of the modified example can suppress the impact when the first conductive portion 90 and the second conductive portion 91 are in contact. Therefore, the substrate processing apparatus 1 of the modified example can suppress the degradation of the first conductive portion 90 and the second conductive portion 91. In addition, the substrate processing apparatus 1 of the modified example can maintain the first conductive portion 90 and the second conductive portion 91 in a contact state at the contact position by deforming the deformable portion.

(第5實施形態) 參考圖19及圖20,針對第5實施形態之基板處理裝置1予以說明。第5實施形態之基板處理裝置1,相對於第4實施形態之基板處理裝置1,使第1導通部95及第2導通部96不同。此處,以與第4實施形態之基板處理裝置1不同處為中心而說明。圖19為第5實施形態之基板處理裝置1中,第1導通部95位於非接觸位置的狀態之示意圖。圖20為第5實施形態之基板處理裝置1中,第1導通部95位於接觸位置的狀態之示意圖。(Fifth Implementation) Referring to FIG. 19 and FIG. 20, the substrate processing apparatus 1 of the fifth implementation is described. The substrate processing apparatus 1 of the fifth implementation differs from the substrate processing apparatus 1 of the fourth implementation in that the first conductive portion 95 and the second conductive portion 96 are different. Here, the description will be centered on the differences from the substrate processing apparatus 1 of the fourth implementation. FIG. 19 is a schematic diagram of a state in which the first conductive portion 95 of the substrate processing apparatus 1 of the fifth implementation is located at a non-contact position. FIG. 20 is a schematic diagram of a state in which the first conductive portion 95 of the substrate processing apparatus 1 of the fifth implementation is located at a contact position.

第1導通部95,具備本體部95a與腕部95b。本體部95a,安裝於處理液噴吐噴嘴21,與處理液噴吐噴嘴21接觸。例如,本體部95a,與處理液噴吐噴嘴21的第1本體部35接觸。於本體部95a,形成第1本體部35可滑動的孔。The first conductive portion 95 includes a body portion 95a and an arm portion 95b. The body portion 95a is mounted on the processing liquid spray nozzle 21 and contacts the processing liquid spray nozzle 21. For example, the body portion 95a contacts the first body portion 35 of the processing liquid spray nozzle 21. The body portion 95a has a hole through which the first body portion 35 can slide.

腕部95b,從本體部95a朝向上方延伸設置。腕部95b,設置為使腕部95b的上端,成為較噴嘴區塊20的上端、及臂部10的上端更為上方。The arm portion 95b is extended upward from the body portion 95a. The arm portion 95b is provided so that the upper end of the arm portion 95b is higher than the upper end of the nozzle block 20 and the upper end of the arm portion 10.

第2導通部96,設置於處理容器2。具體而言,第2導通部96之至少一部分,設置於處理容器2之頂板。第2導通部96,具備本體部96a與變形部96b。本體部96a之一方的端部,設置於處理液噴吐噴嘴21之待機位置的上方附近。The second conductive portion 96 is provided in the processing container 2. Specifically, at least a portion of the second conductive portion 96 is provided on the top plate of the processing container 2. The second conductive portion 96 includes a body portion 96a and a deformable portion 96b. One end of the body portion 96a is provided above the standby position of the processing liquid spray nozzle 21.

變形部96b,設置為從本體部96a之一方的端部朝向斜下方延伸。變形部96b,對於本體部96a,以懸臂之狀態支持。變形部96b,對於本體部96a可往上下方向轉動。The deformable portion 96b is provided to extend obliquely downward from one end of the main body 96a. The deformable portion 96b supports the main body 96a in a cantilevered state. The deformable portion 96b can rotate in the up-down direction relative to the main body 96a.

變形部96b,在第1導通部95位於接觸位置的情況,和第1導通部95接觸。接觸位置,為處理液噴吐噴嘴21從待機位置移動至上方的位置。The deformable portion 96b contacts the first conductive portion 95 when the first conductive portion 95 is located at the contact position. The contact position is a position where the processing liquid ejecting nozzle 21 moves upward from the standby position.

變形部96b,在第1導通部95位於非接觸位置的情況,未和第1導通部95接觸。非接觸位置,例如包含噴吐位置及待機位置。When the first conductive portion 95 is located at the non-contact position, the deformed portion 96b is not in contact with the first conductive portion 95. The non-contact position includes, for example, a spraying position and a standby position.

移動機構11(參考圖1),藉由使處理液噴吐噴嘴21及第1導通部95升降,而將處理液噴吐噴嘴21及第1導通部95之位置,在接觸位置與非接觸位置切換。The moving mechanism 11 (see FIG. 1 ) switches the positions of the processing liquid spraying nozzle 21 and the first conducting portion 95 between the contact position and the non-contact position by raising and lowering the processing liquid spraying nozzle 21 and the first conducting portion 95 .

若處理液噴吐噴嘴21,從待機位置往上方移動,則第1導通部95之腕部95b與第2導通部96之變形部96b接觸。變形部96b,藉由腕部95b往上推,以本體部96a側為支點而從初始位置往上方轉動、變形。When the treatment liquid discharge nozzle 21 moves upward from the standby position, the arm 95b of the first conductive portion 95 contacts the deformable portion 96b of the second conductive portion 96. The deformable portion 96b is pushed upward by the arm 95b, and rotates upward from the initial position and deforms with the body 96a side as a fulcrum.

若處理液噴吐噴嘴21,從接觸位置往下方移動,則第1導通部95之腕部95b,與第2導通部96之變形部96b分隔。第2導通部96之變形部96b,以本體部96a側為支點而朝向下方轉動,返回初始位置。When the treatment liquid ejection nozzle 21 moves downward from the contact position, the arm portion 95b of the first conductive portion 95 is separated from the deformed portion 96b of the second conductive portion 96. The deformed portion 96b of the second conductive portion 96 rotates downward with the body portion 96a as a fulcrum and returns to the initial position.

<效果> 基板處理裝置1,具備處理容器2。處理容器2,收納處理液噴吐噴嘴21及移動機構11。第2導通部96,設置於處理容器2。移動機構11,藉由使處理液噴吐噴嘴21及第1導通部95升降,而將處理液噴吐噴嘴21及第1導通部95之位置,在接觸位置與非接觸位置切換。<Effect> The substrate processing device 1 includes a processing container 2. The processing container 2 accommodates a processing liquid spray nozzle 21 and a moving mechanism 11. The second conductive portion 96 is provided in the processing container 2. The moving mechanism 11 switches the positions of the processing liquid spray nozzle 21 and the first conductive portion 95 between a contact position and a non-contact position by raising and lowering the processing liquid spray nozzle 21 and the first conductive portion 95.

藉此,在基板處理裝置1,使設置於處理容器2的第2導通部96與處理容器2之外部的導電性構件之連接變得簡單。Thus, in the substrate processing apparatus 1 , the connection between the second conductive portion 96 provided in the processing container 2 and the conductive member outside the processing container 2 is simplified.

<第5實施形態的變形例> 變形例之基板處理裝置1,亦可使第1導通部95之腕部95b變形。<Variation of the fifth embodiment> The substrate processing apparatus 1 of the variation can also deform the arm portion 95b of the first conductive portion 95.

(第6實施形態) 參考圖21,針對第6實施形態之基板處理裝置1予以說明。此處,以與第1實施形態之基板處理裝置1不同處為中心而說明,對與第1實施形態之基板處理裝置1相同的部位,賦予相同符號,省略詳細的說明。圖21為顯示第6實施形態之基板處理裝置1的一部分之立體圖。另,此處,將右臂5R作為一例而說明,但於左臂5L中亦具有同樣的構成。(Sixth embodiment) Referring to FIG. 21 , the substrate processing apparatus 1 of the sixth embodiment is described. Here, the description focuses on the differences from the substrate processing apparatus 1 of the first embodiment, and the same symbols are given to the same parts as the substrate processing apparatus 1 of the first embodiment, and detailed descriptions are omitted. FIG. 21 is a three-dimensional view showing a part of the substrate processing apparatus 1 of the sixth embodiment. In addition, here, the right arm 5R is described as an example, but the left arm 5L also has the same structure.

基板處理裝置1的臂部100為導電性構件,例如為含碳之樹脂。臂部100,與處理液噴吐噴嘴21接觸,和處理液噴吐噴嘴21導通。具體而言,臂部100,具備接觸部100a。接觸部100a,與處理液噴吐噴嘴21接觸,和處理液噴吐噴嘴21導通。於接觸部100a,形成處理液噴吐噴嘴21可滑動的孔。The arm 100 of the substrate processing device 1 is a conductive member, such as a carbon-containing resin. The arm 100 is in contact with the processing liquid spray nozzle 21 and is electrically connected to the processing liquid spray nozzle 21. Specifically, the arm 100 has a contact portion 100a. The contact portion 100a is in contact with the processing liquid spray nozzle 21 and is electrically connected to the processing liquid spray nozzle 21. A hole is formed in the contact portion 100a through which the processing liquid spray nozzle 21 can slide.

臂部100,與處理容器2(參考圖1)之外部的導電性構件(例如金屬構件)連接。臂部100,形成從處理液噴吐噴嘴21至處理容器2之外部的導電性構件之導通路徑。導通路徑,以無關於處理液噴吐噴嘴21的位置之方式形成。亦即,經由導通路徑而使處理液噴吐噴嘴21使終電性中和。The arm 100 is connected to a conductive member (e.g., a metal member) outside the processing container 2 (see FIG. 1 ). The arm 100 forms a conductive path from the processing liquid spray nozzle 21 to the conductive member outside the processing container 2. The conductive path is formed in a manner that is independent of the position of the processing liquid spray nozzle 21. That is, the terminal electrical properties of the processing liquid spray nozzle 21 are neutralized through the conductive path.

<效果> 基板處理裝置1,具備處理液噴吐噴嘴21與臂部100。臂部100,與處理液噴吐噴嘴21接觸,和處理液噴吐噴嘴21導通。<Effect> The substrate processing device 1 includes a processing liquid spray nozzle 21 and an arm 100. The arm 100 is in contact with the processing liquid spray nozzle 21 and is electrically connected to the processing liquid spray nozzle 21.

藉此,基板處理裝置1,藉由臂部100而將處理液噴吐噴嘴21電性中和,可抑制處理液噴吐噴嘴21的帶電。因此,基板處理裝置1,可抑制由處理液噴吐噴嘴21的帶電所引起之微粒的產生。Thus, the substrate processing apparatus 1 can suppress the charging of the processing liquid ejecting nozzle 21 by neutralizing the electrical properties of the processing liquid ejecting nozzle 21 through the arm 100. Therefore, the substrate processing apparatus 1 can suppress the generation of particles caused by the charging of the processing liquid ejecting nozzle 21.

(第7實施形態) 參考圖22,針對第7實施形態之基板處理裝置1予以說明。此處,以與第1實施形態之基板處理裝置1不同處為中心而說明,對與第1實施形態之基板處理裝置1相同的部位,賦予相同符號,省略詳細的說明。圖22為顯示第7實施形態之基板處理裝置1的一部分之立體圖。另,此處,將右臂5R作為一例而說明,但於左臂5L中亦具有同樣的構成。(Seventh embodiment) Referring to FIG. 22 , the substrate processing apparatus 1 of the seventh embodiment is described. Here, the description is centered on the differences from the substrate processing apparatus 1 of the first embodiment, and the same symbols are given to the same parts as the substrate processing apparatus 1 of the first embodiment, and detailed descriptions are omitted. FIG. 22 is a three-dimensional view showing a part of the substrate processing apparatus 1 of the seventh embodiment. In addition, here, the right arm 5R is described as an example, but the left arm 5L also has the same structure.

基板處理裝置1,具備電離器101。電離器101,安裝於臂部10。電離器101,設置於處理液噴吐噴嘴21之上方。電離器101,將處理液噴吐噴嘴21電性中和。電離器101,朝向處理液噴吐噴嘴21照射X射線,於處理液噴吐噴嘴21的周圍產生離子。藉由以離子將帶電之處理液噴吐噴嘴21的電荷中和,而將處理液噴吐噴嘴21電性中和。例如,電離器101之底面,設置有透明的樹脂板,透過樹脂板照射X射線。The substrate processing device 1 includes an ionizer 101. The ionizer 101 is mounted on the arm 10. The ionizer 101 is disposed above the processing liquid spray nozzle 21. The ionizer 101 electrically neutralizes the processing liquid spray nozzle 21. The ionizer 101 irradiates X-rays toward the processing liquid spray nozzle 21 to generate ions around the processing liquid spray nozzle 21. The processing liquid spray nozzle 21 is electrically neutralized by neutralizing the charge of the charged processing liquid spray nozzle 21 with the ions. For example, a transparent resin plate is disposed on the bottom surface of the ionizer 101, and X-rays are irradiated through the resin plate.

電離器101,在基板W並未固持於固持部3之情況,朝向處理液噴吐噴嘴21照射X射線,將處理液噴吐噴嘴21電性中和。亦即,電離器101,在處理容器2不具有基板W之情況,朝向處理液噴吐噴嘴21照射X射線,將處理液噴吐噴嘴21電性中和。The ionizer 101 irradiates X-rays toward the processing liquid spray nozzle 21 to electrically neutralize the processing liquid spray nozzle 21 when the substrate W is not held by the holding portion 3. That is, the ionizer 101 irradiates X-rays toward the processing liquid spray nozzle 21 to electrically neutralize the processing liquid spray nozzle 21 when the processing container 2 does not have the substrate W.

<效果> 基板處理裝置1,具備處理液噴吐噴嘴21與電離器101。電離器101,將處理液噴吐噴嘴21電性中和。<Effect> The substrate processing device 1 includes a processing liquid spray nozzle 21 and an ionizer 101. The ionizer 101 neutralizes the electrical properties of the processing liquid spray nozzle 21.

藉此,基板處理裝置1,可抑制處理液噴吐噴嘴21的帶電。因此,基板處理裝置1,可抑制由處理液噴吐噴嘴21的帶電所引起之微粒的產生。Thereby, the substrate processing apparatus 1 can suppress the charging of the processing liquid ejecting nozzle 21. Therefore, the substrate processing apparatus 1 can suppress the generation of particles caused by the charging of the processing liquid ejecting nozzle 21.

電離器101,在固持部3並未固持基板W之情況,將處理液噴吐噴嘴21電性中和。The ionizer 101 electrically neutralizes the processing liquid spray nozzle 21 when the holding portion 3 does not hold the substrate W.

藉此,基板處理裝置1,可防止在將處理液噴吐噴嘴21電性中和時,處理液附著於基板W之情形。Thereby, the substrate processing apparatus 1 can prevent the processing liquid from being attached to the substrate W when the processing liquid spraying nozzle 21 is electrically neutralized.

<第7實施形態的變形例> 變形例之基板處理裝置1的電離器101,亦可在內部產生離子,將產生的離子供給至處理液噴吐噴嘴21,將處理液噴吐噴嘴21電性中和。電離器101,將產生的離子,從設置於底面的複數個送風孔朝向處理液噴吐噴嘴21供給。<Variation of the seventh embodiment> The ionizer 101 of the substrate processing device 1 of the variation can also generate ions inside and supply the generated ions to the processing liquid spray nozzle 21 to electrically neutralize the processing liquid spray nozzle 21. The ionizer 101 supplies the generated ions toward the processing liquid spray nozzle 21 from a plurality of air supply holes provided on the bottom surface.

(變形例) 變形例之基板處理裝置1,亦可將移動機構11的一部分,配置於噴嘴區塊20、51,或臂部10。例如,變形例之基板處理裝置1,藉由移動機構11(轉動機構之一例),使噴嘴區塊51(固定構件之一例),對於臂部10轉動。藉此,變形例之基板處理裝置1,在基板處理中,可變更處理液之噴吐角度。因此,變形例之基板處理裝置1,可將處理液均一地噴吐至基板W之邊緣,可高精度地蝕刻基板W之邊緣。(Variation) The substrate processing device 1 of the variation can also dispose a part of the moving mechanism 11 at the nozzle block 20, 51, or the arm 10. For example, the substrate processing device 1 of the variation can rotate the nozzle block 51 (an example of a fixed member) relative to the arm 10 by means of the moving mechanism 11 (an example of a rotating mechanism). In this way, the substrate processing device 1 of the variation can change the spraying angle of the processing liquid during substrate processing. Therefore, the substrate processing device 1 of the variation can spray the processing liquid uniformly to the edge of the substrate W, and can etch the edge of the substrate W with high precision.

此外,變形例之基板處理裝置1,亦可未於噴嘴區塊20、51設置處理液供給路20a,而如圖23所示地,將處理液供給管5a直接連接至處理液噴吐噴嘴80。圖23為顯示變形例之臂5的一部分之剖面圖。於處理液供給管5a之前端,例如設置樹脂螺帽81。此外,於處理液噴吐噴嘴80的第1本體部82,形成樹脂螺帽81可螺合之螺紋脊。In addition, the substrate processing apparatus 1 of the modified example may not provide the processing liquid supply path 20a in the nozzle blocks 20 and 51, and the processing liquid supply pipe 5a may be directly connected to the processing liquid spray nozzle 80 as shown in FIG23. FIG23 is a cross-sectional view showing a part of the arm 5 of the modified example. A resin nut 81 is provided at the front end of the processing liquid supply pipe 5a. In addition, a threaded ridge into which the resin nut 81 can be screwed is formed on the first body portion 82 of the processing liquid spray nozzle 80.

藉此,能夠以未於噴嘴區塊20、51設置處理液供給路20a之方式,使噴嘴區塊20、51成為簡易的構成。因此,可降低成本。Thus, the nozzle blocks 20 and 51 can be simplified in structure without providing the processing liquid supply path 20a in the nozzle blocks 20 and 51. Therefore, the cost can be reduced.

此外,在變形例之處理液噴吐噴嘴52,亦可使噴嘴噴吐部31的內壁面31c、31e,親水性較第1流路35a的內壁面35c及第2流路36a的內壁面36c更高。例如,在變形例之處理液噴吐噴嘴52,亦可於包含噴吐口31d的內壁面31e之噴吐流路31b的內壁面31c、31e之一部分,施行親水化處理。此外,在變形例之處理液噴吐噴嘴52,亦可將噴嘴本體部30以耐藥性高、疏水性高之樹脂構成,將噴嘴噴吐部31以親水性較噴嘴本體部30更高的材料構成。In addition, in the treatment liquid spraying nozzle 52 of the modified example, the inner wall surfaces 31c and 31e of the nozzle spraying portion 31 may be made more hydrophilic than the inner wall surface 35c of the first flow path 35a and the inner wall surface 36c of the second flow path 36a. For example, in the treatment liquid spraying nozzle 52 of the modified example, a portion of the inner wall surfaces 31c and 31e of the spraying flow path 31b including the inner wall surface 31e of the spray port 31d may be subjected to a hydrophilic treatment. In addition, in the treatment liquid spraying nozzle 52 of the modified example, the nozzle body 30 may be made of a resin having high chemical resistance and high hydrophobicity, and the nozzle spraying portion 31 may be made of a material having higher hydrophilicity than the nozzle body 30.

藉此,氣泡變得不易附著於噴吐口31d,在噴吐處理液時,氣泡變得不易與處理液一同排出。因此,可使處理液之噴吐狀態穩定化。Thereby, bubbles become less likely to adhere to the ejection port 31d, and when the processing liquid is ejected, bubbles become less likely to be discharged together with the processing liquid. Therefore, the ejection state of the processing liquid can be stabilized.

此外,變形例之基板處理裝置1,亦可於臂5設置基板對準機構。基板對準機構,分別設置於左臂5L、及右臂5R。基板對準機構,於水平方向中包夾基板W,將載置於固持部3的基板W之位置對準。具體而言,基板對準機構,調整基板W之位置,俾使基板W之中心與固持部3之旋轉軸一致。變形例之基板處理裝置1,使固持部3固持藉由基板對準機構調整過位置的基板W。In addition, the substrate processing device 1 of the modified example may also be provided with a substrate alignment mechanism on the arm 5. The substrate alignment mechanism is provided on the left arm 5L and the right arm 5R, respectively. The substrate alignment mechanism clamps the substrate W in the horizontal direction and aligns the position of the substrate W placed on the holding portion 3. Specifically, the substrate alignment mechanism adjusts the position of the substrate W so that the center of the substrate W is consistent with the rotation axis of the holding portion 3. The substrate processing device 1 of the modified example allows the holding portion 3 to hold the substrate W whose position is adjusted by the substrate alignment mechanism.

藉此,變形例之基板處理裝置1,可高精度地蝕刻基板W之邊緣。Thus, the substrate processing apparatus 1 of the modified example can etch the edge of the substrate W with high precision.

此外,亦可將各實施形態之基板處理裝置1、與變形例之基板處理裝置1組合。例如,亦可將氣體噴吐噴嘴71,設置於第1實施形態之基板處理裝置1。例如,亦可於第4實施形態~第7實施形態之基板處理裝置1中,使用第2實施形態之處理液供給部50。另,雖揭露使各實施形態之處理液噴吐噴嘴21、52、80蝕刻基板W之邊緣部的一例,但其等亦可作為將基板W全表面蝕刻或洗淨之處理液噴吐噴嘴使用,而不僅蝕刻基板W之邊緣部。In addition, the substrate processing apparatus 1 of each embodiment may be combined with the substrate processing apparatus 1 of the modification. For example, the gas spray nozzle 71 may be provided in the substrate processing apparatus 1 of the first embodiment. For example, the processing liquid supply unit 50 of the second embodiment may be used in the substrate processing apparatus 1 of the fourth to seventh embodiments. In addition, although an example of using the processing liquid spray nozzles 21, 52, 80 of each embodiment to etch the edge of the substrate W is disclosed, they may also be used as processing liquid spray nozzles for etching or cleaning the entire surface of the substrate W, not just etching the edge of the substrate W.

另,應知本次揭露之實施形態的全部觀點僅為例示,並非用於限制本發明。實際上,上述實施形態可藉由多樣的形態具體實現。此外,上述實施形態,亦可不脫離添附之發明申請專利範圍及其要旨地,以各式各樣的形態省略、置換、變更。In addition, it should be understood that all aspects of the embodiments disclosed herein are merely illustrative and are not intended to limit the present invention. In fact, the embodiments described above can be implemented in a variety of forms. In addition, the embodiments described above can also be omitted, replaced, or modified in various forms without departing from the scope and gist of the attached invention application.

1:基板處理裝置 2:處理容器 3:固持部(基板旋轉部之一例) 4:外側杯(杯部之一例) 4a:缺口部 5:臂(噴嘴臂之一例) 5a:處理液供給管 5L:左臂 5R:右臂 6:控制裝置 6a:儲存部 6b:控制部 10,100:臂部 11:移動機構(轉動機構之一例) 12,50,70:處理液供給部 20,51:噴嘴區塊(固定構件之一例) 20a:處理液供給路 20b:第1凹部 20c:第2凹部 20d:第3凹部 20e:貫通孔 21,52,80:處理液噴吐噴嘴 22:螺栓 30,53:噴嘴本體部 31:噴嘴噴吐部 31a:插入部 31b:噴吐流路 31c,31e:內壁面 31d:噴吐口 32,54:連接部(角度變更機構之一例) 32a:安裝部 32b:螺栓孔 35,55,82:第1本體部 35a:第1流路 35b:導入部 35c:內壁面 36:第2本體部 36a:第2流路 36b:凹部 36c:內壁面 38,39:O型環 54a:腕部 55a:卡合溝 55b:卡合部 60:對準部 60a:第1對準溝 60b:第2對準溝 71:氣體噴吐噴嘴 81:樹脂螺帽 90,95:第1導通部 91,96:第2導通部 91a,95a,96a:本體部 91b,96b:變形部 95b:腕部 100a:接觸部 101:電離器 A1,A2:噴吐角度 W:基板1: substrate processing device 2: processing container 3: holding part (an example of substrate rotating part) 4: outer cup (an example of cup part) 4a: notch part 5: arm (an example of nozzle arm) 5a: processing liquid supply pipe 5L: left arm 5R: right arm 6: control device 6a: storage part 6b: control part 10,100: arm part 11: moving mechanism (an example of rotating mechanism) 12,50,70: Treatment liquid supply section 20,51: Nozzle block (an example of a fixed member) 20a: Treatment liquid supply path 20b: First recess 20c: Second recess 20d: Third recess 20e: Through hole 21,52,80: Treatment liquid spray nozzle 22: Bolt 30,53: Nozzle body 31: Nozzle spray section 31a: Insertion section 31b: Spray flow path 31c,31e: Inner wall surface 31d: Spray port 32,54: Connection part (an example of an angle changing mechanism) 32a: Mounting part 32b: Bolt hole 35,55,82: First body part 35a: First flow path 35b: Introducing part 35c: Inner wall surface 36: Second body part 36a: Second flow path 36b: Concave part 36c: Inner wall surface 38,39: O-ring 54a: Wrist part 55a: Engagement groove 55b: snap-fitting part 60: alignment part 60a: first alignment groove 60b: second alignment groove 71: gas spray nozzle 81: resin nut 90,95: first conductive part 91,96: second conductive part 91a,95a,96a: body 91b,96b: deformation part 95b: wrist 100a: contact part 101: ionizer A1,A2: spray angle W: substrate

圖1係第1實施形態之基板處理裝置的構成之示意圖。 圖2係第1實施形態之處理液供給部的立體圖。 圖3係第1實施形態之處理液供給部的俯視圖。 圖4係圖3的IV-IV剖面圖。 圖5係第1實施形態之處理液噴吐噴嘴的前視圖。 圖6係第1實施形態之處理液噴吐噴嘴的俯視圖。 圖7係圖6的VII-VII剖面圖。 圖8係說明第1實施形態之噴吐角度變更處理的流程圖。 圖9係第2實施形態之處理液供給部的俯視圖。 圖10係第2實施形態之處理液噴吐噴嘴的俯視圖。 圖11係圖10的XI-XI剖面圖。 圖12係從斜下方觀察第2實施形態之處理液噴吐噴嘴的立體圖。 圖13係圖9的XIII-XIII剖面圖。 圖14係第3實施形態之處理液供給部的俯視圖。 圖15係說明第3實施形態之處理液噴吐噴嘴及氣體噴吐噴嘴的配置之示意圖。 圖16係顯示第4實施形態之基板處理裝置的一部分之立體圖。 圖17係第4實施形態之基板處理裝置中,處理液噴吐噴嘴位於待機位置的狀態之示意圖。 圖18係第4實施形態之基板處理裝置中,處理液噴吐噴嘴位於噴吐位置的狀態之示意圖。 圖19係第5實施形態之基板處理裝置中,第1導通部位於非接觸位置的狀態之示意圖。 圖20係第5實施形態之基板處理裝置中,第1導通部位於接觸位置的狀態之示意圖。 圖21係顯示第6實施形態之基板處理裝置的一部分之立體圖。 圖22係顯示第7實施形態之基板處理裝置的一部分之立體圖。 圖23係顯示變形例之臂的一部分之剖面圖。FIG. 1 is a schematic diagram of the structure of the substrate processing device of the first embodiment. FIG. 2 is a perspective view of the processing liquid supply unit of the first embodiment. FIG. 3 is a top view of the processing liquid supply unit of the first embodiment. FIG. 4 is a cross-sectional view taken along line IV-IV of FIG. 3. FIG. 5 is a front view of the processing liquid spray nozzle of the first embodiment. FIG. 6 is a top view of the processing liquid spray nozzle of the first embodiment. FIG. 7 is a cross-sectional view taken along line VII-VII of FIG. 6. FIG. 8 is a flow chart for explaining the spray angle change process of the first embodiment. FIG. 9 is a top view of the processing liquid supply unit of the second embodiment. FIG. 10 is a top view of the processing liquid spray nozzle of the second embodiment. FIG. 11 is a cross-sectional view taken along line XI-XI of FIG. 10 . FIG. 12 is a perspective view of the treatment liquid spray nozzle of the second embodiment as viewed from an oblique bottom. FIG. 13 is a cross-sectional view taken along line XIII-XIII of FIG. 9 . FIG. 14 is a top view of the treatment liquid supply unit of the third embodiment. FIG. 15 is a schematic diagram illustrating the arrangement of the treatment liquid spray nozzle and the gas spray nozzle of the third embodiment. FIG. 16 is a perspective view showing a portion of the substrate processing apparatus of the fourth embodiment. FIG. 17 is a schematic diagram showing the state in which the treatment liquid spray nozzle is located at a standby position in the substrate processing apparatus of the fourth embodiment. FIG. 18 is a schematic diagram showing a state in which a treatment liquid spray nozzle is located at a spraying position in a substrate processing apparatus of the fourth embodiment. FIG. 19 is a schematic diagram showing a state in which a first conductive portion is located at a non-contact position in a substrate processing apparatus of the fifth embodiment. FIG. 20 is a schematic diagram showing a state in which a first conductive portion is located at a contact position in a substrate processing apparatus of the fifth embodiment. FIG. 21 is a perspective view showing a portion of a substrate processing apparatus of the sixth embodiment. FIG. 22 is a perspective view showing a portion of a substrate processing apparatus of the seventh embodiment. FIG. 23 is a cross-sectional view showing a portion of an arm of a modified example.

5a:處理液供給管 5a: Treatment liquid supply pipe

5R:右臂 5R: Right arm

10:臂部 10: Arms

12:處理液供給部 12: Treatment fluid supply unit

20:噴嘴區塊(固定構件之一例) 20: Nozzle block (an example of a fixed component)

20b:第1凹部 20b: 1st concave part

20e:貫通孔 20e: Through hole

21:處理液噴吐噴嘴 21: Treatment liquid spray nozzle

22:螺栓 22: Bolts

Claims (22)

一種處理液噴吐噴嘴,用以噴吐基板處理所使用的處理液,包含:噴嘴本體部,具備:第1本體部,形成有和處理液供給路連通的第1流路;及第2本體部,形成有和該第1流路連通的第2流路,且相對於該第1本體部彎曲;角度變更機構,對於固定該噴嘴本體部的固定構件,變更水平方向中之該噴嘴本體部的角度;以及噴嘴噴吐部,形成有和該第2流路連通的噴吐流路,將處理液噴吐至基板;該噴嘴噴吐部,可於該第2本體部之前端裝卸。 A treatment liquid spraying nozzle is used to spray the treatment liquid used for substrate treatment, comprising: a nozzle body, having: a first body, forming a first flow path connected to the treatment liquid supply path; and a second body, forming a second flow path connected to the first flow path and bent relative to the first body; an angle changing mechanism, for a fixing member fixing the nozzle body, changing the angle of the nozzle body in the horizontal direction; and a nozzle spraying part, forming a spraying flow path connected to the second flow path, spraying the treatment liquid onto the substrate; the nozzle spraying part can be loaded and unloaded at the front end of the second body. 如請求項1之處理液噴吐噴嘴,其中,該角度變更機構,係可變更對於該固定構件之安裝位置的連接部。 As in claim 1, the treatment liquid spray nozzle, wherein the angle changing mechanism is a connecting portion that can change the mounting position of the fixed component. 如請求項1之處理液噴吐噴嘴,其中,該角度變更機構,係將該第1本體部以可轉動之方式支持的連接部。 As in claim 1, the treatment liquid spray nozzle, wherein the angle changing mechanism is a connecting portion that supports the first main body portion in a rotatable manner. 如請求項3之處理液噴吐噴嘴,其中,該噴嘴本體部及該連接部,包含對齊該角度的對準部。 As in claim 3, the treatment liquid spraying nozzle, wherein the nozzle body and the connecting portion include an alignment portion aligned with the angle. 如請求項1之處理液噴吐噴嘴,其中,該噴吐流路之直徑,較該第2流路之直徑更小。 For example, in the treatment liquid spray nozzle of claim 1, the diameter of the spray flow path is smaller than the diameter of the second flow path. 如請求項1之處理液噴吐噴嘴,其中,該噴嘴噴吐部的內壁面,其親水性較該第1流路及該第2流路的內壁面更高。 As in claim 1, the treatment liquid spraying nozzle, wherein the inner wall surface of the spraying portion of the nozzle has a higher hydrophilicity than the inner wall surfaces of the first flow path and the second flow path. 一種噴嘴臂,包含:如請求項第1至6項中任一項之處理液噴吐噴嘴;該固定構件;臂部,安裝有該固定構件;以及轉動機構,使該固定構件或該臂部,於水平方向轉動。 A nozzle arm comprises: a treatment liquid spraying nozzle as in any one of claim items 1 to 6; the fixed component; an arm portion on which the fixed component is mounted; and a rotating mechanism for rotating the fixed component or the arm portion in a horizontal direction. 如請求項7之噴嘴臂,其中,該轉動機構,使該固定構件相對於該臂部轉動。 A nozzle arm as claimed in claim 7, wherein the rotating mechanism causes the fixed member to rotate relative to the arm. 如請求項7之噴嘴臂,其中,更包含氣體噴吐噴嘴,其噴吐氣體以使噴至基板而往該基板之上方飛散的處理液往較該基板更外側排出。 The nozzle arm of claim 7 further comprises a gas spray nozzle, which sprays gas so that the processing liquid sprayed onto the substrate and scattered above the substrate is discharged to the outside of the substrate. 如請求項9之噴嘴臂,其中,該氣體噴吐噴嘴,配置於較該處理液噴吐噴嘴更為內側。 The nozzle arm of claim 9, wherein the gas spray nozzle is arranged further inward than the treatment liquid spray nozzle. 如請求項9之噴嘴臂,其中,該氣體噴吐噴嘴,以較水平方向中的該處理液之相對於基板切線之噴吐角度更大之噴吐角度,噴吐該氣體。 The nozzle arm of claim 9, wherein the gas spray nozzle sprays the gas at a spray angle greater than the spray angle of the processing liquid relative to the tangent line of the substrate in the horizontal direction. 一種基板處理裝置,包含:如請求項7之噴嘴臂;以及基板旋轉部,使載置的基板旋轉;該處理液噴吐噴嘴,朝向該基板之邊緣噴吐處理液。 A substrate processing device comprises: a nozzle arm as claimed in claim 7; and a substrate rotating part for rotating a mounted substrate; and a processing liquid spraying nozzle for spraying processing liquid toward the edge of the substrate. 一種基板處理裝置,包含:如請求項7之噴嘴臂;基板旋轉部,使載置的基板旋轉;以及控制部,控制該處理液噴吐噴嘴與該基板旋轉部;其中,該控制部,與基板處理相應而設定該轉動機構之轉動角度;並以設定之該轉動角度將處理液朝向基板噴吐。 A substrate processing device comprises: a nozzle arm as claimed in claim 7; a substrate rotating unit for rotating a mounted substrate; and a control unit for controlling the processing liquid spraying nozzle and the substrate rotating unit; wherein the control unit sets a rotation angle of the rotating mechanism in accordance with substrate processing; and sprays the processing liquid toward the substrate at the set rotation angle. 如請求項第13項之基板處理裝置,其中,該控制部,在該基板處理中變更該轉動角度。 A substrate processing device as claimed in claim 13, wherein the control unit changes the rotation angle during the substrate processing. 一種基板處理裝置,包含:如請求項1至6中任一項之處理液噴吐噴嘴;第1導通部,與該處理液噴吐噴嘴接觸,而和該處理液噴吐噴嘴導通;第2導通部,藉由與該第1導通部接觸而和該處理液噴吐噴嘴導通,將該處理液噴吐噴嘴電性中和;以及 移動機構,將該處理液噴吐噴嘴及該第1導通部之位置,在該第1導通部與該第2導通部接觸之接觸位置、和該第1導通部與該第2導通部不接觸之非接觸位置切換。 A substrate processing device comprises: a processing liquid spray nozzle as claimed in any one of claims 1 to 6; a first conductive portion, which contacts the processing liquid spray nozzle and is in electrical communication with the processing liquid spray nozzle; a second conductive portion, which contacts the first conductive portion and is in electrical communication with the processing liquid spray nozzle to neutralize the electrical properties of the processing liquid spray nozzle; and a moving mechanism, which switches the position of the processing liquid spray nozzle and the first conductive portion between a contact position where the first conductive portion contacts the second conductive portion and a non-contact position where the first conductive portion does not contact the second conductive portion. 如請求項15之基板處理裝置,其中,該第1導通部及該第2導通部中之至少一方的導通部,包含在與另一方的導通部接觸之情況下變形的變形部。 A substrate processing device as claimed in claim 15, wherein at least one of the first conductive portion and the second conductive portion includes a deformable portion that deforms when in contact with the other conductive portion. 如請求項15之基板處理裝置,其中,更包含:固持部,在施行該基板處理時,用以固持基板;以及杯部,圍繞該固持部所固持的該基板之外側而設置;而該第2導通部,設置於該杯部。 The substrate processing device of claim 15 further comprises: a holding portion for holding a substrate when the substrate processing is performed; and a cup portion disposed around the outer side of the substrate held by the holding portion; and the second conductive portion is disposed on the cup portion. 如請求項15之基板處理裝置,其中,更包含處理容器,其收納該處理液噴吐噴嘴及該移動機構;該第2導通部,設置於該處理容器;該移動機構,藉由使該處理液噴吐噴嘴及該第1導通部升降,而將該處理液噴吐噴嘴及該第1導通部之位置,在該接觸位置和該非接觸位置切換。 The substrate processing device of claim 15 further comprises a processing container, which accommodates the processing liquid spray nozzle and the moving mechanism; the second conductive part is arranged in the processing container; the moving mechanism switches the position of the processing liquid spray nozzle and the first conductive part between the contact position and the non-contact position by lifting and lowering the processing liquid spray nozzle and the first conductive part. 一種基板處理裝置,包含:如請求項1至6中任一項之處理液噴吐噴嘴;以及臂部,與該處理液噴吐噴嘴接觸,而和該處理液噴吐噴嘴導通。 A substrate processing device, comprising: a processing liquid spray nozzle as in any one of claims 1 to 6; and an arm, which contacts the processing liquid spray nozzle and is in electrical communication with the processing liquid spray nozzle. 一種基板處理裝置,包含:如請求項1至6中任一項之處理液噴吐噴嘴;以及電離器,將該處理液噴吐噴嘴電性中和。 A substrate processing device, comprising: a processing liquid spray nozzle as in any one of claims 1 to 6; and an ionizer to electrically neutralize the processing liquid spray nozzle. 如請求項20之基板處理裝置,其中,更包含固持部,於施行該基板處理時,用以固持基板;而該電離器,在該基板並未固持於該固持部之情況,將該處理液噴吐噴嘴電性中和。 The substrate processing device of claim 20 further comprises a holding portion for holding the substrate when the substrate processing is performed; and the ionizer electrically neutralizes the processing liquid spray nozzle when the substrate is not held in the holding portion. 一種基板處理方法,利用如請求項7之噴嘴臂將處理液噴吐至基板,其包含如下步驟:設定步驟,與基板處理相應而設定該轉動機構之轉動角度;以及噴吐步驟,以設定之該轉動角度朝向基板噴吐處理液。 A substrate processing method, using a nozzle arm as in claim 7 to spray a processing liquid onto a substrate, comprises the following steps: a setting step, setting the rotation angle of the rotating mechanism corresponding to the substrate processing; and a spraying step, spraying the processing liquid toward the substrate at the set rotation angle.
TW109122371A 2019-07-16 2020-07-02 Process liquid discharge nozzle, nozzle arm, substrate processing device, and substrate processing method TWI860379B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019131192 2019-07-16
JP2019-131192 2019-07-16
JP2020-093773 2020-05-28
JP2020093773A JP7519813B2 (en) 2019-07-16 2020-05-28 Processing liquid discharge nozzle, nozzle arm, substrate processing apparatus, and substrate processing method

Publications (2)

Publication Number Publication Date
TW202115782A TW202115782A (en) 2021-04-16
TWI860379B true TWI860379B (en) 2024-11-01

Family

ID=74566099

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109122371A TWI860379B (en) 2019-07-16 2020-07-02 Process liquid discharge nozzle, nozzle arm, substrate processing device, and substrate processing method

Country Status (3)

Country Link
JP (1) JP7519813B2 (en)
CN (1) CN213278016U (en)
TW (1) TWI860379B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023140682A (en) * 2022-03-23 2023-10-05 株式会社Screenホールディングス Substrate processing equipment and substrate processing method
JP1779582S (en) 2024-02-09 2024-09-10 nozzle
JP1779551S (en) 2024-02-09 2024-09-10 nozzle
JP1779550S (en) 2024-02-09 2024-09-10 nozzle
JP1779581S (en) 2024-02-09 2024-09-10 nozzle

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180315622A1 (en) * 2017-05-01 2018-11-01 Ebara Corporation Apparatus and method for cleaning a back surface of a substrate
CN109545677A (en) * 2017-09-22 2019-03-29 株式会社斯库林集团 Substrate processing method using same and substrate board treatment

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3725809B2 (en) * 2001-09-19 2005-12-14 大日本スクリーン製造株式会社 Substrate processing apparatus and substrate processing method
JP2007214347A (en) * 2006-02-09 2007-08-23 Matsushita Electric Ind Co Ltd Electronic device cleaning apparatus and electronic device cleaning method
JP6314779B2 (en) * 2014-10-01 2018-04-25 東京エレクトロン株式会社 Liquid processing method, storage medium, and liquid processing apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180315622A1 (en) * 2017-05-01 2018-11-01 Ebara Corporation Apparatus and method for cleaning a back surface of a substrate
CN109545677A (en) * 2017-09-22 2019-03-29 株式会社斯库林集团 Substrate processing method using same and substrate board treatment

Also Published As

Publication number Publication date
JP7519813B2 (en) 2024-07-22
TW202115782A (en) 2021-04-16
JP2021019187A (en) 2021-02-15
CN213278016U (en) 2021-05-25

Similar Documents

Publication Publication Date Title
TWI860379B (en) Process liquid discharge nozzle, nozzle arm, substrate processing device, and substrate processing method
TWI892837B (en) Process liquid discharge nozzle, nozzle arm, substrate processing device, and substrate processing method
KR102238880B1 (en) Substrate treatment apparatus and substrate treatment method
CN110690146B (en) Substrate processing apparatus and substrate processing method
JP4676230B2 (en) Substrate processing apparatus and substrate processing method
CN111077742B (en) Liquid Dispensing Nozzles and Substrate Handling Devices
EP1583137B1 (en) Substrate meniscus interface and methods for operation
US9865483B2 (en) Substrate liquid processing method, substrate liquid processing apparatus, and recording medium
US20220059357A1 (en) Substrate processing method and substrate processing apparatus
KR20150050416A (en) Liquid processing apparatus
TW201808466A (en) Substrate processing device, substrate processing method, and memory medium
US20080135070A1 (en) Method and apparatus for active particle and contaminant removal in wet clean processes in semiconductor manufacturing
CN118511256A (en) Substrate processing method and substrate processing apparatus
US11232942B2 (en) Substrate treating method and substrate treating apparatus
US20090032060A1 (en) Bernoulli blade
TW202220027A (en) Substrate processing method and substrate processing device
CN112585722B (en) Substrate processing method and substrate processing device
KR20020071398A (en) Apparatus for dry etching in semiconductor device processing
CN113903648A (en) Nozzle, substrate processing apparatus including the same, and substrate processing method
JP7191591B2 (en) Substrate processing method
US12387939B2 (en) Substrate processing method
JP7008546B2 (en) Substrate processing equipment, substrate liquid treatment method and nozzle
US8652943B2 (en) Method of processing substrate
CN121219819A (en) Nozzle and substrate processing apparatus
JP2008288343A (en) Substrate processor and nozzle unit