TWI855555B - Semiconductor fabrication system - Google Patents

Abstract

A semiconductor fabrication system is provided. The semiconductor fabrication system includes an equipment front end module with a load port to transfer semiconductor wafers to the equipment front end module from a wafer carrier; and a wafer humidity control device embedded in the equipment front end module and configured to generate an air curtain to protect the semiconductor wafers. The wafer humidity control device includes a gas entry layer with a gas inlet to receive a gas; a uniform layer integrated with the gas entry layer and designed to redistribute the gas; and a diversion structure having multiple pieces assembled together to hold the uniform layer and integrated with the gas entry layer.

Description

Semiconductor manufacturing system

This disclosure relates to a semiconductor manufacturing system.

The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced generations of ICs, each with smaller and more complex circuits than the previous generation. During IC evolution, while geometric size (i.e., the smallest component (or line) that can be formed by a process) has decreased, functional density (i.e., the number of interconnects per unit chip area) has generally increased. Such scaling down processes generally provides benefits by increasing production efficiency and reducing associated costs. Such scaling down also increases the complexity of IC processing and manufacturing, and similar developments in IC processing and manufacturing are needed to achieve these advances.

For example, in IC manufacturing, the control of particles, humidity, and other contaminants is extremely challenging. Even smaller particles can be yield-impacting defects that need to be eliminated or significantly reduced. In other examples, existing humidity control devices have structures that can cause stress, deformation, and other defects, resulting in the inability to achieve the desired function. Therefore, a semiconductor system and its manufacturing and use methods are needed to solve the above problems.

According to one embodiment, a semiconductor manufacturing system includes an equipment front-end module having an unloading module to transfer a semiconductor wafer from a wafer carrier to the equipment front-end module; and a wafer humidity control device, embedded in the equipment front-end module, for generating an air curtain to protect the semiconductor wafer. The wafer humidity control device includes an air inlet layer having an air inlet to receive gas; a uniform layer integrated in the air inlet layer and designed to redistribute the gas; and a flow guide structure having a plurality of components assembled together to maintain the uniform layer and integrated with the air inlet layer.

According to another embodiment, a semiconductor manufacturing system includes an equipment front-end module having an unloading module to transfer a semiconductor wafer from a wafer carrier to the equipment front-end module; and a wafer humidity control device, embedded in the equipment front-end module, for generating an air curtain to protect the semiconductor wafer. The wafer humidity control device includes an air inlet layer having an air inlet to receive gas; a uniform layer, integrated in the air inlet layer and designed to redistribute the gas; a flow guide structure having a plurality of components assembled together and maintaining a uniform layer; and a saturation pressure layer, designed to maintain the pressure of the gas and configured between the air inlet layer and the flow guide structure.

According to another embodiment, a semiconductor manufacturing system includes an equipment front-end module having an unloading module to transfer a semiconductor wafer from a wafer carrier to the equipment front-end module; a processing tool coupled to the equipment front-end module and designed to perform a process on the semiconductor wafer; and a wafer humidity control device embedded in the equipment front-end module for generating an air curtain to protect the semiconductor wafer. The wafer humidity control device includes an air inlet layer having an air inlet to receive gas; a uniform layer integrated in the air inlet layer and designed to redistribute the gas; a flow guide structure having two L-shaped features assembled together and accommodating the uniform layer; and a saturation pressure layer designed to maintain the pressure of the gas and fixed between the air inlet layer and the flow guide structure.

10:Semiconductor system

12: Equipment front-end module

14: Uninstall module

16: Wafer loading tray

17: Semiconductor wafer

18: Air intake

19: Exhaust port

20: Wafer humidity control device

21: Air curtain

22: Interface

23: Gas

24: Processing tools

26: Wafer platform

28: Robotic arm

30: Air intake layer

34: Gas nozzle

36: Saturated pressure layer

36A: First Area

36B: Second area

38, 38A~38C: Holes

40: Uniform layer

42: Wrinkles

44: O-ring

46: Diversion layer/diversion structure

46A, 46B: concave part

48: End features

50: Side features

52, 56: Spacers

54: L-shaped features

H, H1, H2: height

h1: first aperture

h2: Second aperture

h3: third aperture

P: Pitch

W1: First hole distance

W2: Second hole distance

W3: The third hole distance

The present disclosure will be best understood by reading the following detailed description in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion.

FIG1 is a block diagram of a semiconductor system having a wafer humidity control device constructed in various aspects according to an embodiment of the present disclosure.

FIG. 2A and FIG. 2B are schematic diagrams of a wafer humidity control device constructed in various aspects according to some embodiments of the present disclosure according to FIG. 1.

FIG. 2C is a perspective view of the wafer humidity control device of FIG. 2B constructed in various aspects according to some embodiments of the present disclosure.

FIG. 2D is a cross-sectional view of a wafer humidity control device constructed according to some embodiments.

FIG3 is a top view of a saturated pressure layer of a wafer humidity control device constructed in various aspects according to an embodiment of the present disclosure.

FIG4 is a schematic diagram of a uniform layer of a wafer humidity control device constructed in various aspects according to an embodiment of the present disclosure.

FIG5 is a perspective view of various components of a flow guide structure of a wafer humidity control device constructed according to some embodiments.

FIG. 6A and FIG. 6B are perspective views of a guide structure and a uniform layer of a wafer humidity control device constructed according to some embodiments.

FIG7 is a top view of the guide structure of the wafer humidity control device constructed in various aspects according to an embodiment of the present disclosure.

The present disclosure generally relates to a semiconductor manufacturing system. The following disclosure provides a plurality of different embodiments or examples for implementing different features. The present disclosure may reuse reference numbers and/or letters in various examples. Such repetition is for the purpose of brevity and clarity and does not specify the relationship between the various embodiments and/or configurations. Furthermore, specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to limit the present disclosure. For example, the following description mentions that a first feature is formed above or on a second feature, which may include an embodiment in which the first feature and the second feature are in direct contact, and may also include an embodiment in which additional features are formed between the first feature and the second feature so that the first feature and the second feature are not in direct contact. In addition, in the present disclosure, a feature formed on another feature, a feature connected to another feature, and/or a feature coupled to another feature may include embodiments in which the aforementioned features form direct contact, and may also include embodiments in which additional features are inserted between the aforementioned features, so that the aforementioned features do not directly contact.

In addition, the disclosure may reuse reference numbers and/or letters in various examples. Such repetition is for the purpose of brevity and clarity and does not specify the relationship between various embodiments and/or configurations. Furthermore, one feature formed on another feature, one feature connected to another feature, and/or one feature coupled to another feature may include embodiments in which the aforementioned features form direct contact, and may also include embodiments in which additional features are inserted between the aforementioned features so that the aforementioned features do not directly contact. In addition, spatially related terms, such as "lower", "upper", "horizontal", "vertical", "above", "above", "below", "under", "up", "down", "top", "bottom", etc. and their derivatives (such as "horizontally", "downwardly", "upwardly", etc.) may be used herein to facilitate describing the relationship of one feature element relative to another feature in the present disclosure. Such spatially related terms are intended to cover different orientations of a device including the aforementioned features. Furthermore, when "approximately", "approximately", etc. are used to describe a value or a range of values, such terms are intended to cover values within a reasonable range including the stated value, or other values understood by a person skilled in the art. For example, the term "approximately 5 nanometers" includes a range of sizes from 4.5 nanometers to 5.5 nanometers.

The present disclosure provides various embodiments of an integrated circuit system (or semiconductor system) having an integrated wafer humidity control device. The integrated wafer humidity control device has a design, structure, and assembly method for reducing stress and deformation.

FIG. 1 is a schematic diagram of an integrated circuit system (also referred to as a semiconductor system) 10 constructed in various aspects according to an embodiment of the present disclosure. In some embodiments, the semiconductor system 10 is designed for semiconductor manufacturing. The semiconductor system 10 includes an equipment front end module (EFEM) 12, which is designed as a module for transporting semiconductor wafers (or masks) between ultra-clean storage carriers and various systems (also referred to as process systems) for processing, measurement, and testing. The processes implemented in the process system include deposition, etching, ion implantation, lithography processes, and combinations thereof.

The equipment front-end module 12 includes one or more unloading modules (load ports) 14, which are designed to receive and transfer semiconductor wafers 17 from a wafer carrier 16 to a processing tool 24. The wafer carrier 16 is a container designed to hold and transfer one or more semiconductor wafers 17 and protect them during transportation. In the disclosed embodiment, the wafer carrier 16 is a front opening unified pod designed to hold semiconductor wafers 17, such as 300 mm silicon wafers.

The semiconductor system 10 further includes one or more processing tools 24 coupled to the equipment front-end module 12 through an interface 22 so that the semiconductor wafer 17 can be transferred between the equipment front-end module 12 and the processing tool 24. The processing tool 24 is a platform for performing one or more processes on the semiconductor wafer 17, such as manufacturing, measurement, testing, and combinations thereof. In some examples, manufacturing includes deposition, etching, ion implantation, chemical mechanical polishing, lithography, other suitable processes, and combinations thereof. In some examples, measurement includes measuring resistance, reflectivity, particle contamination, electrical property measurement, other suitable processes, and combinations thereof. In some examples, testing includes testing to screen faulty wafers after IC manufacturing is completed and before cutting.

In the disclosed embodiment, the processing tool 24 is a deposition device, such as chemical vapor deposition or physical vapor deposition. In a further embodiment, the processing tool 24 includes a wafer platform 26, which is designed to hold one or more semiconductor wafers 17 during the deposition process and is capable of movement, such as rotation and/or translation movement. The processing tool 24 may also include one or more robots 28 for transferring semiconductor wafers 17 between the equipment front-end module 12 and the wafer platform 26 or between wafer platforms 26.

Returning to the equipment front-end module 12, the equipment front-end module 12 includes a wafer humidity control device 20 embedded in and integrated with the equipment front-end module 12. The wafer humidity control device 20 is a device designed to control the humidity of the semiconductor wafer 17 stored in the wafer carrier 16, and the wafer carrier 16 is fixed on the unloading module 14. The equipment front-end module 12 includes various components integrated into the mechanism to control humidity. In particular, the equipment front-end module 12 includes an air inlet 18 and an air outlet 19, wherein the air inlet 18 is coupled to a gas supply source to provide a gas 23, and the air outlet 19 enables the gas 23 to be directly discharged from the wafer humidity control device 20 with appropriate airflow direction, pressure and distribution, thereby forming an air curtain (or air wall) 21 to isolate and protect the semiconductor wafer 17 stored in the wafer carrier 16 from being affected by the ambient humidity. The gas 23 may include Extreme Clean Dry Air (XCDA), nitrogen, other suitable gases or a combination thereof. The wafer humidity control device 20 is further described in Figures 2A and 2B.

FIG. 2A and FIG. 2B are schematic diagrams of a wafer humidity control device 20 constructed according to some embodiments. FIG. 2C is a perspective view of a wafer humidity control device 20 constructed according to some embodiments in FIG. 2B. FIG. 2D is a cross-sectional view of a wafer humidity control device 20 constructed according to some embodiments in FIG. 2A or FIG. 2B.

In this embodiment, the wafer humidity control device 20 includes an inlet layer 30 having an inlet 18 to introduce a gas 23 into the wafer humidity control device 20. The inlet 18 may include one or more gas nozzles 34 configured to distribute the gas, for example, toward a saturation pressure layer 36. In this embodiment, the inlet 18 may include one gas nozzle 34, as shown in FIG. 2A. Alternatively, the inlet 18 includes a plurality of gas nozzles 34, for example, three gas nozzles 34, as shown in FIG. 2B. The inlet layer 30 also serves as a cap or cover for the wafer humidity control device 20. The air intake layer 30 is made of one or more metal materials (such as stainless steel or aluminum alloy), other suitable materials (such as glass, quartz or alumina), other suitable materials or a combination thereof.

Continuing with reference to FIG. 2A , the wafer humidity control device 20 includes a saturation pressure layer 36 having a plurality of holes 38 formed thereon. The saturation pressure layer 36 is designed to maintain or even increase gas pressure through the holes 38 and to control gas distribution. In particular, the holes 38 are unevenly distributed in the saturation pressure layer 36 and have different hole sizes and different hole densities. In the disclosed embodiment, the holes 38 are formed in two regions, wherein a first region 36A is close to the gas inlet 18 and a second region 36B is far from the gas inlet 18. For example, the first region 36A is at a first distance from the gas inlet 18 and the second region 36B is at a second distance from the gas inlet 18 that is greater than the first distance K. In a further example, the maximum distance between the first region 36A and the air inlet 18 is smaller than the shortest distance between the second region 36B and the air inlet 18. In this case, the air inlet 18 is arranged closer to a single side in the air inlet layer 30, as shown in FIG. 2D. In the structure of the disclosed wafer humidity control device 20, the air inlet 18 is arranged on a single side, and the saturation pressure layer 36 is divided into a first region 36A close to the air inlet 18 and a second region 36B far from the air inlet 18.

The holes 38 include a first group of holes 38A in the first area 36A and a second group of holes 38B in the second area 36B. The first group of holes 38A has a first hole size and a first hole density, and the second group of holes 38B has a second hole size greater than the first hole size and a second hole density greater than the first hole density. The design of the holes 38 helps to achieve uniform airflow. The design of the holes 38 on the saturated pressure layer 36 is further described with reference to FIG. 3. FIG. 3 is a top view of the saturated pressure layer, which includes a first group of holes 38A configured in the first area 36A and a second group of holes 38B configured in the second area 36B, as defined above. The saturated pressure layer 36 may further include a third group of holes 38C formed at four corners of the saturated pressure layer 36.

In the disclosed embodiment, each group of holes is arranged along a line oriented in the Y direction. In particular, the first group of holes 38A is designed to have a first aperture h1 and a first aperture distance W1 (the dimension from one hole to another adjacent hole). The second group of holes 38B is designed to have a second aperture h2 and a second aperture distance W2. The third group of holes 38C is designed to have a third aperture h3 and a third aperture distance W3. W1>W2>W3, and h1<h2<h3=. In some embodiments, W1 is between 1 mm and 50 mm, and the third aperture h3 is between 0.1 mm and 3 mm. In some embodiments, the aperture ratio is h2/h1=h3/h2, and is between 1.2 and 1.6. The aperture distance ratio is W1/W2=W2/W3, and is between 1.3 and 1.8. Since the pressure near the air inlet 18 is relatively high, this configuration is designed to reduce the area of higher pressure and distribute the gas so that the pressure remains uniform.

In some embodiments, the holes 38C in the corner area include an appropriate number of holes 38C, for example, each corner has four or more holes 38C. In some embodiments, the holes 38 are designed to have a gradient structure, and the hole size and hole density gradually increase as the distance between the hole 38 and the air inlet 18 increases. This configuration provides greater freedom for distributing airflow and maintaining uniform pressure.

The saturated pressure layer 36 is made of any suitable material, including plastic, polymer, metal, glass, quartz, ceramic or a combination thereof. In some embodiments, the plastic or polymer forming the saturated pressure layer 36 includes polyethylene terephthalate (PET), high-density polyethylene (HDPE), polyvinyl chloride (PVC), low-density polyethylene (LDPE), polypropylene (PP), polystyrene (PS), ultra-high molecular weight polyethylene (UPE), polyethylene (PE) or a combination thereof. In some embodiments, the metal forming the saturated pressure layer 36 includes aluminum alloy, stainless steel, titanium alloy, other suitable metals or a combination thereof. In some embodiments, the ceramic forming the saturated pressure layer 36 includes aluminum oxide, zirconium oxide, other suitable ceramics or a combination thereof.

Please continue to refer to FIG. 2A , the wafer humidity control device 20 includes two O-rings 44 disposed on both sides of the saturation pressure layer 36 , so that the saturation pressure layer 36 is seamlessly integrated with other components in the wafer humidity control device 20 to reduce leakage. The O-ring 44 is made of a soft material, such as rubber, other suitable polymer materials or a combination thereof. The O-ring 44 will be further described through the description of the wafer humidity control device 20 and other components.

Please continue to refer to FIG. 2A , the wafer humidity control device 20 includes a uniform layer 40. The uniform layer 40 is designed as a mechanism for further controlling the flow rate, distribution, density or pressure, flow direction or a combination thereof of the gas 23. In particular, the uniform layer 40 is formed with an uneven surface to enhance the control of the gas 23. The uniform layer 40 with this design appearance can effectively compress the gas 23 to increase the gas pressure, and can also evenly distribute the gas 23. In the disclosed embodiment, the uniform layer 40 includes wrinkles 42 with a height H and a spacing P. This is further shown in the enlarged portion 40A of the uniform layer 40 in FIG. 4 and is shown on the left side of FIG. 4 . In some examples, the ratio of H/P greater than 20 is configured closer to the air inlet 18. In some examples, the height H is between 2 mm and 40 mm. The spacing P is between 0.1 mm and 2 mm. In some other examples, the length of the uniform layer 40 is greater than 400 mm, and the number of wrinkles 42 is greater than 400. The uneven surface of the uniform layer 40 provides more interactions between the airflow and the uniform layer 40, thereby better controlling the gas flow rate and flow direction. The above design of the uniform layer 40 and its effectiveness are determined by theoretical analysis, implementation and modeling.

The uniform layer 40 is made of any suitable material, including plastics or polymers, such as polyethylene terephthalate (PET), high-density polyethylene (HDPE), polyvinyl chloride (PVC), low-density polyethylene (LDPE), polypropylene (PP), polystyrene (PS), ultra-high molecular weight polyethylene (UPE), polyethylene (PE) or a combination thereof. The uniform layer 40 is fixed in the flow guide layer 46, as described in detail below.

Please continue to refer to FIG. 2 , the wafer humidity control device 20 includes a guide layer 46 integrated with other components in the wafer humidity control device 20 . The guide layer 46 acts to accommodate the uniform layer 40 and further serves as the basic framework of the humidity control device 20 . The guide layer 46 further provides more space for the gas 23 to flow through the uniform layer 40 , so that the gas 23 can be more evenly distributed before leaving the wafer humidity control device 20 . The guide layer 46 includes aluminum alloy, stainless steel, titanium alloy, other suitable metals, other suitable alloys or combinations thereof.

The guide layer 46 is not a one-piece feature, but rather includes multiple parts assembled together. This multi-piece design of the guide layer 46 provides greater freedom for adjusting the configuration of the guide layer 46 and the installation of the uniform layer 40, eliminating or reducing stress and deformation, and further ensuring the sealing structure of the wafer humidity control device 20 to improve the filtering performance of the wafer humidity control device 20. Therefore, the guide layer 46 also serves as the guide structure 46. Experiments, simulations, and analyses show that if the guide layer 46 is one-piece, the uniform layer 40 is not easy to install in the guide layer 46, and may cause stress and deformation in the uniform layer 40. If the uniform layer 40 is too small, a gap may be left between the inner wall of the guide layer 46 and the uniform layer 40. If the uniform layer 40 is too large, the uniform layer 40 may be deformed, such as the rectangular frame of the guide layer 46 is bent and bulged. In particular, the installation time of the uniform layer 40 in the guide layer 46 is prolonged, and installation differences may occur due to different engineers, which is not cost-effective and raises concerns about quality control. With the disclosed multi-piece guide structure 46, the installation of the uniform layer 40 can be performed by a well-defined procedure with good quality control, reduced stress and cost-effectiveness.

In some embodiments, the guide layer 46 includes two end features 48 and two side features 50, and the various components are assembled together with the uniform layer 40 fixed therein by means of mechanisms such as screws or other suitable fixtures. Because the guide layer 46 includes multiple components, the distance between adjacent components can be adjusted to reduce stress and deformation, thereby optimizing the configuration.

In some embodiments, each component in the flow guide structure 46 may include some recesses 46A, which are designed and configured to fix the uniform layer 40. This will be further described with reference to Figures 5, 6A and 6B. Figure 5 is a perspective view of each component of the flow guide structure 46 constructed according to some embodiments. Figures 6A and 6B are perspective views of the flow guide structure 46 and the uniform layer 40 constructed according to some embodiments. In the disclosed embodiment, the flow guide structure 46 includes two end features 48 and two side features 50. The end features 48 and the side features 50 include recesses 46A, which are configured to maintain space for the uniform layer 40 when assembled together, as shown in Figures 6A and 6B. In some embodiments, the recess 46A has a height H1 shown in Figure 5. According to some embodiments, the height H1 is between 5 mm and 20 mm.

In some embodiments, additionally or alternatively, other features or materials may be used to secure the uniform layer 40 in the flow-guiding structure 46. In some embodiments, the flow-guiding structure 46 further includes a spacer 52 inserted between the end feature 48 and the side feature 50. The spacer 52 is a soft pad made of a suitable material, such as rubber, other suitable polymeric materials, or a combination thereof. The spacer 52 has a similar function and composition to the O-ring 44 and is designed to provide a sealing effect that reduces leakage. The spacer 52 can also reduce stress and deformation due to its softness.

In some embodiments, the air intake layer 30 includes a recess (e.g., a groove) on the bottom surface of the air intake layer 30, which has a shape and size that enables the O-ring 44 to fit. Similarly, the flow guide structure 46 also includes a recess (e.g., a groove) 46B located on the top surface, which has a shape and size that enables the O-ring 44 to fit. In this case, the recess 46B of the flow guide structure 46 corresponding to the O-ring 44 is formed on various features, such as the end feature 48 and the side feature 50 of the flow guide structure 46. As shown in FIG. 6A, the recess 46B includes a height H2. According to some embodiments, the height H2 is between 0.1 mm and 5 mm.

The flow guiding structure 46 may include a greater or lesser number of components that are designed and configured to perform the same function. In some embodiments, the flow guiding layer 46 includes two L-shaped features 54, as shown in the top view of FIG. 7. Each L-shaped feature 54 is a combination of an end feature 48 and a side feature 50. In a further embodiment, the flow guiding structure 46 may further include two spacers 56 inserted between the interfaces of the two L-shaped features 54. The composition and function of the spacer 56 are similar to those of the spacer 52. The L-shaped feature 54 also includes a groove on the top corresponding to the O-ring 44 and a recess on the inner wall, which is designed to have a space for accommodating the uniform layer 40.

The present disclosure provides a structure of a wafer humidity control device embedded in a front-end module of an equipment. The wafer humidity control device is designed as a mechanism for generating an air curtain with appropriate airflow, gas pressure and gas distribution to effectively isolate and protect semiconductor wafers stored in a wafer carrier, wherein the wafer carrier is positioned at an unloading module of the front-end module of the equipment. The wafer humidity control device includes an integrated air intake layer, a saturation pressure structure, a uniform layer and a flow guide structure. In particular, the flow guide structure includes a plurality of components assembled together so that the uniform layer can be easily installed in the flow guide structure and maintained therein. Various embodiments of the wafer humidity control device are provided, in particular the flow guide structure therein. Various advantages can be presented in each embodiment. By utilizing the disclosed structure of the wafer humidity control device, the installation of the uniform layer 40 can be performed by a well-defined procedure with good quality control. In addition, when the uniform layer is installed inside the guide structure, the multi-piece guide structure provides greater adjustment freedom and reduces stress and deformation of the uniform layer.

In one exemplary aspect, the present disclosure provides a semiconductor manufacturing system. The semiconductor manufacturing system includes an equipment front-end module having an unloading module to transfer a semiconductor wafer from a wafer carrier to the equipment front-end module; and a wafer humidity control device, embedded in the equipment front-end module, for generating an air curtain to protect the semiconductor wafer. The wafer humidity control device includes an air inlet layer, having an air inlet to receive a gas; a uniform layer, integrated in the air inlet layer and designed to redistribute the gas; and a flow guide structure, having a plurality of components assembled together to maintain the uniform layer, and integrated with the air inlet layer. The air inlet is coupled to a gas supply source to receive a gas including one of nitrogen and extreme clean dry air (XCDA). The semiconductor manufacturing system further includes a saturation pressure layer integrated with the air intake layer and the guide structure, the saturation pressure layer is designed to maintain the pressure of the gas. The guide structure includes two end features and two side features assembled together to maintain a uniform layer. The guide structure further includes a plurality of spacers, and each spacer is inserted into an interface between an end feature and a side feature. The guide structure further includes two L-shaped features assembled together to maintain a uniform layer. The semiconductor manufacturing system further includes two O-rings disposed on opposite sides of the saturated pressure layer, so that one side of the saturated pressure layer is attached to the guide structure through one O-ring, and the other side of the saturated pressure layer is attached to the intake layer through another O-ring. The uniform layer includes a combination of plastic and polymer materials, and the uniform layer is shaped as a plurality of wrinkles with a height H and a spacing P, and the ratio of H/P is greater than 20. The saturated pressure layer has a plurality of holes, and the plurality of holes include a first group of holes near the air inlet and a second group of holes far from the air inlet, the first group of holes has a first hole size and a first hole density, and the second group of holes has a second hole size greater than the first hole size and a second hole density greater than the first hole density. The material of the saturated pressure layer is selected from a group consisting of metal, glass, quartz, ceramic material, polymer or a combination thereof. The semiconductor manufacturing system includes a processing tool, which is integrated in the equipment front-end module and is designed to perform a process on a semiconductor wafer. The processing tool is designed to perform at least one of a process, measurement and test on a semiconductor wafer. The process includes deposition, etching, ion implantation, chemical mechanical polishing, lithography process or a combination thereof.

Another aspect of the present disclosure relates to a semiconductor manufacturing system. The semiconductor manufacturing system includes an equipment front-end module having an unloading module to transfer a semiconductor wafer from a wafer carrier to the equipment front-end module; and a wafer humidity control device, embedded in the equipment front-end module, for generating an air curtain to protect the semiconductor wafer. The wafer humidity control device includes an air inlet layer, having an air inlet to receive gas; a uniform layer, integrated in the air inlet layer and designed to redistribute the gas; a flow guide structure, having multiple components assembled together and maintaining the uniform layer; and a saturation pressure layer, designed to maintain the pressure of the gas, and configured between the air inlet layer and the flow guide structure. The flow guiding structure includes two end features and two side features assembled together to maintain a uniform layer; and four spacers, each spacer is inserted into the interface between one end feature and one side feature. The flow guiding structure includes two L-shaped features assembled together to maintain a uniform layer; and two spacers, each spacer is inserted into the interface between the two L-shaped features. The uniform layer includes a combination of plastic and polymeric materials, and the uniform layer is shaped as a plurality of folds having a height H and a spacing P, and the ratio H/P is greater than 20. The saturated pressure layer has a plurality of holes formed thereon, and the plurality of holes include a first group of holes close to the air inlet and a second group of holes far from the air inlet, the first group of holes has a first hole size and a first hole density, and the second group of holes has a second hole size greater than the first hole size and a second hole density greater than the first hole density.

Another aspect of the present disclosure relates to a semiconductor manufacturing system. The semiconductor manufacturing system includes an equipment front-end module having an unloading module to transfer a semiconductor wafer from a wafer carrier to the equipment front-end module; a processing tool coupled to the equipment front-end module and designed to perform a process on the semiconductor wafer; and a wafer humidity control device embedded in the equipment front-end module to generate an air curtain to protect the semiconductor wafer. The wafer humidity control device includes an air inlet layer having an air inlet to receive gas; a uniform layer integrated in the air inlet layer and designed to redistribute the gas; a flow guide structure having two L-shaped features assembled together and accommodating the uniform layer; and a saturation pressure layer designed to maintain the pressure of the gas and fixed between the air inlet layer and the flow guide structure. The uniform layer is shaped as a plurality of wrinkles with a height H and a spacing P, and the ratio of H/P is greater than 20. The saturated pressure layer has a plurality of holes formed thereon, and the holes are unevenly distributed with different hole sizes and different hole densities.

The foregoing content summarizes the features of several embodiments. Those skilled in the art should understand that they can easily use this disclosure as a basis for designing or modifying other processes and structures to implement the same purpose and/or achieve the same advantages as the embodiments described herein. Those skilled in the art should also recognize that such equivalent structures do not deviate from the spirit and scope of this disclosure, and they can make various changes, substitutions and modifications to it without departing from the spirit and scope of this disclosure.

10:Semiconductor system

12: Equipment front-end module

14: Uninstall module

16: Wafer loading tray

17: Semiconductor wafer

18: Air intake

19: Exhaust port

20: Wafer humidity control device

21: Air curtain

22: Interface

23: Gas

24: Processing tools

26: Wafer platform

28: Robotic arm

Claims (10)

A semiconductor manufacturing system includes: a front-end module of an equipment having an unloading module to transfer a semiconductor wafer from a wafer carrier to the front-end module of the equipment; and a wafer humidity control device, embedded in the front-end module of the equipment and configured to generate an air curtain to protect the semiconductor wafer, wherein the wafer humidity control device includes: an air inlet layer, having an air inlet to receive gas; a uniform layer, integrated in the air inlet layer and designed to redistribute the gas; and a flow guide structure, having a plurality of components assembled together to maintain the uniform layer and integrated with the air inlet layer. A semiconductor manufacturing system as described in claim 1, wherein the gas inlet is coupled to a gas supply source to receive the gas including one of nitrogen and extremely clean dry air. The semiconductor manufacturing system as described in claim 2 further includes a saturated pressure layer integrated with the air inlet layer and the flow guide structure, and the saturated pressure layer is designed to maintain the pressure of the gas. A semiconductor manufacturing system as described in claim 3, wherein the guide structure includes two end features and two side features assembled together, and the uniform layer is maintained. A semiconductor manufacturing system as described in claim 4, wherein the flow guide structure further comprises a plurality of spacers, and each of the spacers is inserted into the interface between one of the end features and one of the side features. A semiconductor manufacturing system as described in claim 3, wherein the flow guiding structure further comprises two L-shaped features assembled together and maintaining the uniform layer. The semiconductor manufacturing system as described in claim 3 further includes two O-rings disposed on opposite sides of the saturated pressure layer, so that one side of the saturated pressure layer is attached to the flow guide structure through one of the O-rings, and the other side of the saturated pressure layer is attached to the air intake layer through another of the O-rings. A semiconductor manufacturing system as described in claim 7, wherein the uniform layer comprises a combination of plastic and polymer materials, and the uniform layer is shaped into a plurality of wrinkles having a height H and a spacing P, and the ratio of H/P is greater than 20. A semiconductor manufacturing system as described in claim 7, wherein the saturated pressure layer has a plurality of holes, and the plurality of holes include a first group of holes close to the air inlet and a second group of holes far from the air inlet, the first group of holes has a first hole size and a first hole density, and the second group of holes has a second hole size greater than the first hole size and a second hole density greater than the first hole density. The semiconductor manufacturing system as described in claim 1 includes a processing tool integrated in the equipment front-end module and designed to perform a process on the semiconductor wafer.

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