TWI840267B - Ingot cutting equipment - Google Patents

Abstract

A wafer cutting device includes a wafer fixing device and a wire cutting device, wherein the wafer fixing device has a guide rail, a fixed end is provided on one side of the guide rail, and a movable end that can move along the guide rail is provided on the other side of the guide rail, the fixed end is provided with a rotating shaft portion, and a suction portion is provided on the rotating shaft portion, and a wafer can be fixedly arranged on the movable end, the wafer is arranged between the movable end and the fixed end, and one end of the wafer is vacuum-absorbed by the suction portion, and the rotating shaft portion can be rotated to drive the suction portion to rotate, the wire cutting device has a wire feeder that can move in two dimensions, and the wire feeder continuously feeds a cutting wire, the cutting wire is a diamond wire, and the wire cutting device has a liquid infusion tube for spraying cutting fluid.

Description

Ingot cutting device

The present invention relates to a wafer cutting device, in particular to a wafer cutting device that improves processing accuracy and can be applied to wafers with higher hardness.

According to the report, the semiconductor industry is booming. Due to the widespread consumption and application of electronic products, the demand for chips has also exploded. The semiconductor industry chain also plays a very important role in our country. Wafer foundry is the foundation of the semiconductor industry. Wafers are mainly made of silicon as raw materials. In order to achieve the specified radius of the wafer, the Czochralski method is often used to make round rod-shaped crystal ingots and then cut them, taking into account both cost and quality.

Known ingot cutting devices, such as the Republic of China Patent No. I786740 "Ingot Cutting Device and Ingot Cutting Method", use a driving unit to drive an ingot to move toward a cutting line and drive the cutting line to move back and forth, thereby achieving a cutting effect. It is not difficult to see from the diagram that the ingot processing method cannot achieve high-precision cutting, and although the use of multiple cutting lines can improve processing efficiency, the lack of attention to precision may result in a decrease in processing efficiency instead of an increase in yield, and it cannot handle ingots with higher hardness.

Therefore, the inventor of this invention took this into consideration and came up with the idea of invention. He then designed it based on his years of experience, conducted many discussions and conducted sample tests, and made many revisions and improvements before launching this invention.

The technical problem that the present invention aims to solve is to provide a device for cutting ingots with improved processing accuracy and capable of being applied to the above-mentioned deficiencies of the existing technology.

Technical features for solving the problem:

The present invention provides a wafer cutting device, which includes a wafer fixing device and a wire cutting device, wherein the wafer fixing device has a guide rail, a fixed end is provided on one side of the guide rail, and a movable end that can move along the guide rail is provided on the other side of the guide rail, the fixed end is provided with a rotating shaft portion, and a suction portion is provided on the rotating shaft portion, and a wafer can be fixedly arranged on the movable end, and the wafer is arranged between the movable end and the fixed end, and one end of the wafer is vacuum-absorbed by the suction portion, and the rotating shaft portion can be rotated to drive the suction portion to rotate; the wire cutting device has a two-dimensionally movable feeding portion. The wire feeder continuously feeds a cutting wire, which is a diamond wire, and the wire cutting device has a liquid delivery tube for spraying cutting fluid; through the above structure, the movable end is moved to move the ingot so that one end of the ingot is attached to the suction part for vacuum adsorption, the shaft part rotates to drive the ingot to rotate, the wire feeder moves to make the cutting wire contact the ingot for cutting, the wire feeder moves until the cutting is completed, the ingot is adsorbed on one end of the suction part to form a wafer, and after the movable end is moved to remove the ingot, the user can remove the wafer from the suction part and then cut it again.

Furthermore, the ingot is a 4H-SiC crystal column.

Furthermore, the guide rail is provided with at least one fine-tuning portion for adjusting the sliding of the guide rail.

Furthermore, the wire cutting device is provided with an ultrasonic device for vibrating and removing debris on the cutting wire.

The main purpose of the present invention is that the ingot is cut individually by the wire cutting device with higher precision, thereby avoiding the processing error affecting the yield rate, and the suction part can absorb the ingot, and can also absorb the wafer 5 produced after the ingot is cut, so as to improve the processing efficiency, and the shaft part can rotate to drive the ingot to rotate, and the cutting wire continuously transported by the wire feeder, in conjunction with the cutting wire made of diamond wire, can cut the ingot with a harder material.

Other objects, advantages and novel features of the present invention will become more apparent from the following detailed description and the related drawings.

Parts of this invention:

(10): Crystal ingot fixing device

(11):Guide rails

(12): Fixed end

(121): Rotating shaft

(122): Absorption Department

(13):Activity terminal

(14): Crystal Tablet

(15): Wafer

(16): Fine-tuning department

(20): Wire cutting device

(21): Wire feeder

(22): Cutting line

(23): Infusion tube

(24):Ultrasound device

[Figure 1] is a three-dimensional diagram of the present invention in an unfixed crystal state.

[Figure 2] is a three-dimensional diagram of the fixed crystal state of the present invention.

[Figure 3] is a top view of the present invention.

[Figure 4] is a schematic diagram of the translation of the wire cutting device of the present invention.

[Figure 5] is a schematic diagram of the wire cutting device of the present invention moving in the cutting direction.

[Figure 6] is a schematic diagram of the wire cutting device of the present invention moving in the cutting direction and cooperating with the rotation of the shaft.

[Figure 7] is a schematic diagram of the cutting process of the present invention.

[Figure 8] is a top view diagram of the cutting process of the present invention.

[Figure 9] is a schematic diagram of the chip obtained by processing of the present invention.

[Figure 10] is a schematic diagram of the re-fixed crystal state of the present invention.

In order to enable the review committee to have a deeper understanding and knowledge of the purpose, features and effects of this invention, please refer to the [Simple Diagram Description] for details as follows:

First, please refer to FIG. 1 and FIG. 2. The present invention provides a wafer cutting device, which includes a wafer fixing device (10) and a wire cutting device (20), wherein the wafer fixing device (10) has a guide rail (11), one side of the guide rail (11) is provided with a fixed end (12), and the other side of the guide rail (11) is further provided with a movable end (13) that can move along the guide rail (11), the fixed end (12) is provided with a rotating shaft portion (121), the rotating shaft portion (121) is provided with a suction portion (122), and the movable end (13) can be fixed on the guide rail (11). A crystal ingot (14) is arranged between the movable end (13) and the fixed end (12), and the suction part (122) vacuum absorbs one end of the crystal ingot (14), and the rotating shaft part (121) can rotate to drive the suction part (122) to rotate; the wire cutting device (20) has a wire feeder (21) that can move in two dimensions, and the wire feeder (21) continuously feeds a cutting wire (22), and the cutting wire (22) is a diamond wire, and the wire cutting device (20) has a liquid delivery pipe (23) for spraying cutting fluid.

As shown in Figures 6 to 10, by means of the above structure, the movable end (13) is moved to move the ingot (14) so that one end thereof is attached to the suction portion (122) for vacuum suction, the shaft portion (121) is rotated to drive the ingot (14) to rotate, the wire feeder (21) is moved to make the cutting wire (22) contact the ingot (14) for cutting, the wire feeder (21) is moved until the cutting is completed, the ingot (14) is adsorbed on one end of the suction portion (122) to form a wafer (15), and after the movable end (13) is moved to remove the ingot (14), the user can remove the wafer (15) from the suction portion (122) and then cut it again.

The present invention provides a crystal ingot cutting device, wherein the crystal ingot (14) is a 4H-SiC crystal column, which has a relatively high hardness.

The present invention provides a wafer cutting device, wherein the suction portion (122) is a vacuum suction cup.

The present invention provides a wafer cutting device, wherein the guide rail (11) is provided with at least one fine adjustment portion (16) for adjusting the sliding movement of the guide rail (11).

The present invention provides a wafer cutting device, wherein the wire cutting device (20) is provided with an ultrasonic device (24) for vibrating and removing debris on the cutting wire (22).

The detailed usage is shown in FIG. 3 and FIG. 4. Since the wire feeder (21) can move in two dimensions, the wire feeder (21) can be moved horizontally to determine where to cut the crystal (14), and the thickness of the wafer (15) obtained after cutting can be adjusted. As shown in FIG. 5 to FIG. 7, the wire feeder (21) moves to make the cutting wire (22) contact the crystal (14) for cutting. The cutting wire (22) continuously transports and cooperates with the rotating shaft (121) to drive the crystal (14), so as to effectively and accurately cut. Moreover, the cutting wire (22) is a diamond wire, which can also effectively deal with the crystal (14) with higher hardness. ), during which the liquid delivery tube (23) sprays cutting fluid to cool down and maintain accuracy and quality. As shown in Figures 8 to 10, after cutting, the wire feeder (21) is removed and the movable end (13) and the crystal (14) are withdrawn, and the wafer (15) is taken out from the suction part (122). Then, the movable end (13) and the crystal (14) are pushed against the suction part (122) again, and the suction part (122) is used for vacuum adsorption again. The above steps are repeated to cut and produce the wafer (15). The guide rail cooperates with the rotating shaft part (121) and the movable end (13), so as to achieve the processing of the fourth axis.

The ingot cutting device provided by the present invention has the following effects: the ingot (14) is cut individually by the wire cutting device (20) with high precision, thereby avoiding the influence of processing errors on the yield rate, and the suction part (122) can absorb the ingot (14) and the wafer (15) generated after the ingot (14) is cut, thereby improving the processing efficiency, and the shaft part (121) can rotate to drive the ingot (14) to rotate, and the wire feeder (21) continuously transports the cutting wire (22), which is made of diamond wire, to cut the ingot (14) with a harder material.

In summary, this invention has indeed achieved a breakthrough structural design and has improved invention content. At the same time, it can achieve industrial applicability and progress. Moreover, this invention has not been seen in any publication and is also novel. It should comply with the relevant provisions of the Patent Law. Therefore, we have filed an invention patent application in accordance with the law and pleaded with the review committee of the Jun Bureau to grant legal patent rights. We are very grateful.

However, the above is only a preferred embodiment of the present invention and should not be used to limit the scope of implementation of the present invention; that is, all equivalent changes and modifications made according to the scope of the patent application of the present invention should still fall within the scope of the patent of the present invention.

(10): Crystal ingot fixing device

(11):Guide rails

(12): Fixed end

(121): Rotating shaft

(122): Absorption Department

(13):Activity terminal

(14): Crystal Tablet

(16): Fine-tuning department

(20): Wire cutting device

(21): Wire feeder

(22): Cutting line

(23): Infusion tube

(24):Ultrasound device

Claims (5)

A wafer cutting device includes a wafer fixing device and a wire cutting device, wherein: The crystal ingot fixing device has a guide rail, a fixed end is provided on one side of the guide rail, and a movable end that can move along the guide rail is provided on the other side of the guide rail. The fixed end is provided with a rotating shaft portion, and a suction portion is provided on the rotating shaft portion. A crystal ingot can be fixedly arranged on the movable end, and the crystal ingot is arranged between the movable end and the fixed end, and one end of the crystal ingot is vacuum-absorbed by the suction portion, and the rotating shaft portion can be rotated to drive the suction portion to rotate; The wire cutting device has a two-dimensionally movable wire feeder, which continuously feeds a cutting wire, which is a diamond wire, and the wire cutting device has a fluid delivery tube for spraying cutting fluid; By means of the above structure, the movable end is moved to move the ingot so that one end of the ingot is attached to the suction part for vacuum suction, the shaft part is rotated to drive the ingot to rotate, the wire feeder is moved to make the cutting wire contact the ingot for cutting, the wire feeder is moved until the cutting is completed, the ingot is adsorbed on one end of the suction part to form a wafer, and after the movable end is moved to remove the ingot, the user can remove the wafer from the suction part and then cut it again. The ingot cutting device as described in claim 1, wherein the ingot is a 4H-SiC crystal column. The wafer cutting device as described in claim 1, wherein the suction portion is a vacuum suction cup. The ingot cutting device as described in claim 1, wherein the guide rail is provided with at least one fine adjustment portion for adjusting the sliding of the guide rail. The ingot cutting device as described in claim 1, wherein the wire cutting device is provided with an ultrasonic device for vibrating and removing debris on the cutting wire.

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