TWI736055B - Semiconductor manufacturing device and semiconductor device manufacturing method - Google Patents

Abstract

The subject of the present invention is to provide a technology that can reflect illuminating light without inputting to a camera even when the flatness of the surface of a wafer or die cannot be maintained. [Solution] Semiconductor manufacturing equipment is equipped with: Camera device for taking crystal grains; A lighting device that irradiates light at a predetermined angle from the crystal grains to the optical axis of the imaging device; and A control unit that controls the imaging device and the lighting device. The predetermined angle is an angle at which, when the crystal grains are flat, even if the light irradiated from the lighting device is directly reflected by the crystal grains, it does not enter the imaging device. The control unit is configured to enable the imaging device, the lighting device, and the imaging device to be directly reflected by the illuminating device when the crystal grains are uneven and not enter the imaging device. At least one of the aforementioned crystal grains moves.

Description

Semiconductor manufacturing device and semiconductor device manufacturing method

This case is related to semiconductor manufacturing equipment, for example, it can be applied to a die bonder equipped with a camera that recognizes die.

As part of the manufacturing process of a semiconductor device, there is a process of mounting a semiconductor chip (hereinafter referred to as a die) on a wiring board or a lead frame (hereinafter referred to as a substrate) to assemble and package. Circle (hereinafter referred to as wafer) is the process of dividing the die (dicing process) and the bonding process of mounting the divided die on the substrate. The semiconductor manufacturing equipment used in the bonding process is a die bonder.

The die bonder is a device that uses solder, gold plating, and resin as bonding materials to bond (mount and bond) the die to the substrate or to the die that has already been bonded. For example, in a die bonder that bonds the die to the surface of the substrate, a suction nozzle called a collet is used to suck and pick up the die from the wafer, transport it to the substrate, and apply a pressing force, and The operation (work) of bonding by heating the bonding material is repeated. The chuck is a holder with adsorption holes, attracts air, adsorbs and holds crystal grains, and has the same size as the crystal grains.

Before picking up the die from the wafer or after bonding the die to a substrate, etc., to inspect the wafer or die for flaws such as cracks or foreign matter, an illumination device is used to image with a camera. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] JP 2017-117916 A

(The problem to be solved by the invention)

Generally, the dark-field method is better when inspecting minor injuries. In order for the wafer surface to be close to the mirror surface, the inspection based on the dark field method is performed, and oblique light illumination of the illumination method of oblique irradiation light is preferable. In dark-field inspections, the surface of the wafer or die that is required to be the background reflects the illuminated light and does not input to the camera. When the flatness of the surface of the wafer or die can be maintained, even if the illumination light is reflected and not input to the camera, the flatness of the surface of the wafer or die may not be possible, such as warping of the wafer or die. During the maintenance, the illuminating light is reflected and input to the camera. The subject of this case is to provide a technology that can reflect the illuminating light without inputting to the camera even when the flatness of the surface of the wafer or die cannot be maintained. Other issues and novel features can be clearly understood from the description of this specification and the drawings. (Means to solve the problem)

If you briefly explain the outline of the representative person in this case, it will be as follows. That is, the semiconductor manufacturing equipment is equipped with: Camera device for taking crystal grains; A lighting device that irradiates light at a predetermined angle from the crystal grains to the optical axis of the imaging device; and A control unit that controls the imaging device and the lighting device. The predetermined angle is an angle at which, when the crystal grains are flat, even if the light irradiated from the lighting device is directly reflected by the crystal grains, it does not enter the imaging device. The control unit is configured to enable the imaging device, the lighting device, and the imaging device to be directly reflected by the illuminating device when the crystal grains are uneven and not enter the imaging device. At least one of the aforementioned crystal grains moves. [Effects of the invention]

According to the above-mentioned semiconductor manufacturing apparatus, even when the flatness of the surface of the wafer or die cannot be maintained, the illuminating light can be reflected without being input to the camera.

Hereinafter, the embodiments and examples will be explained using the drawings. However, in the following description, the same reference numerals are attached to the same constituent elements, and overlapping descriptions may be omitted. In addition, in order to make the description clearer, the drawings may show the width, thickness, shape, etc. of each part in a schematic manner compared to the actual form, but this is only an example and does not limit the interpretation of the present invention.

When inspecting the cracks of the die in the dark field of oblique light illumination, the relative positional relationship between the illumination and the camera (imaging device) and the die is important to maintain a high detection rate. As will be described later, in oblique illumination, the illuminating device is arranged so that the incident angle is as vertical as possible to the surface of the crystal grain, and the incident angle is set to the maximum angle of the camera that directly reflected light (direct light) does not enter the camera. Better. If it exceeds, the light from the light source specularly reflected on the surface of the die becomes direct light and enters the camera. Therefore, in the crack inspection, the crystal grain surface becomes a bright field. It becomes difficult to ensure the contrast between the cracks and the background, and as a result, the detection rate deteriorates.

Use Figures 1 to 4 to illustrate the incident angle of the illumination. Fig. 1 is a diagram schematically showing coaxial illumination. Fig. 2 is a diagram schematically showing oblique light illumination. Fig. 3 is a diagram schematically showing the state of incident light and reflected light of oblique light illumination. FIG. 4 is a diagram schematically showing the state of incident light and reflected light when the incident angle is smaller than that of FIG. 3. Fig. 5 is an example of a captured image using the oblique light bar illumination of Fig. 4.

As shown in FIG. 1, in the coaxial illumination, the illumination device CEI is configured such that light is irradiated to the surface of the die D along the optical axis OA of the camera CMR and the lens LNS and the semi-transparent mirror HM. Here, the optical axis OA is approximately perpendicular to the surface of the crystal grain D, and the incident angle is approximately 0 degrees. Therefore, if the illuminating device CEI is used to capture images with the camera CMR, the surface of the die D becomes a bright field for cracks, the reflectance is also close, the contrast is difficult to obtain, and the detection sensitivity is poor as a result.

As shown in FIG. 2, in oblique lighting, the illuminating device OBL is configured to irradiate the surface of the die D with light at a predetermined angle with respect to the optical axis OA of the camera CMR and the lens LNS. Here, let the incident angle to the optical axis be θ. If the illumination device OBL is used to capture images with the camera CMR, the surface of the die D becomes a dark field for cracks, the reflectance is also different, and the contrast is easy to obtain. The closer the incident angle of the illuminating device OBL is to vertical (the θ becomes smaller), the larger the contrast difference between the crack and the background, the easier the classification (binarization, etc.) on the image, and the better the detection sensitivity.

At this time, as shown in FIG. 3, the light RL that is specularly reflected on the surface of the die D to be inspected does not directly enter the lens LNS. Let the incident angle at this time be θ1. However, if the incident angle of the illuminating device OBL is too close to vertical, as shown in FIG. 4, the light RL specularly reflected on the surface of the die D enters the lens LNS. If the incident angle at this time is θ2, then 0<θ2<θ1. Therefore, as shown in FIG. 5, the reflected area RA forms a bright field of view, deteriorating the detection sensitivity. Therefore, the positional relationship between the lighting device, the camera, and the die becomes important.

Next, use FIG. 6 to explain the subject of oblique lighting. FIG. 6(a) is a diagram schematically showing the state of incident light and reflected light of oblique light illumination to the die after stacking. Fig. 6(b) is an enlarged view of the crystal grains after the layer stacking of Fig. 6(a). Fig. 6(c) is an example of an imaging image of the die of Fig. 6(a) after the layer stack is stacked.

The above-mentioned positional relationship between the illumination, the camera, and the crystal grains is established when the flatness of the surface of the crystal grains is flat to a certain degree. However, the flatness cannot be maintained depending on the type of the die of the layered NAND flash memory or the like. For example, as shown in FIG. 6(b), in the case of the stacking method while stacking the dies D1, D2, D3, and D4, the area NSA without the support of the lower layer may be upturned. Therefore, as shown in FIG. 6(a), even if the incident angle of the irradiated light of the illuminating device OBL is the same θ1 as that of FIG. The light) RL1 also enters the lens LNS. As shown in FIG. 6(c), the area NSA (upwardly tilted area WA) without the support of the lower layer becomes a bright field of view, deteriorating the detection sensitivity.

Next, the technique of the embodiment for solving the above-mentioned problems will be explained using FIG. 7. FIG. 7(a) is a diagram schematically showing the state of incident light and reflected light for oblique light illumination of the die after stacking. Fig. 7(b) is an example of a photographic image of the crystal grains of Fig. 7(a) after the layer stacking is taken in the center of the field of view. Fig. 7(c) is an example of a photographic image of the crystal grains of Fig. 7(a) after the layer stacking is taken at a position away from the center of the field of view.

In the embodiment, at least any one of the camera CMR, the illuminating device OBL, and the die D is moved so that the reflected light from the upwardly tilted surface of the die D is not taken into the lens LNS. For example, as shown in Figure 7(a), by moving the camera CMR and the lighting device OBL to the same direction (the direction of the arrow) at the same time, the light RL1 reflected on the upturned surface of the die D is not taken into lens. Here, the positional relationship of the lighting device OBL, the camera CMR, and the die D (the one whose flatness is maintained) at the beginning (before the movement) is as shown in FIG. Location.

That is, as shown by the dashed line in FIG. 7(a), an illumination device OBL, a camera CMR, and a die D are arranged, and the center of the die D is placed at the center of the field of view VF of the camera CMR (optical axis OA) . When the die D is upwardly tilted, the light RL1 directly reflected in the upwardly tilted region of the die D enters the lens LNS, and becomes a bright field as shown in FIG. 7(b).

On the other hand, as shown in FIG. 7(a), the camera CMR and the oblique light illuminating device OBL are moved, and the center of the field of view VF (optical axis OA) is shifted from the center of the die D, and the die D is tilted upward The light RL1 directly reflected in the rising area WA does not enter the lens LNS, and as shown in FIG. 7(c), the bright field does not appear.

It is ideal to move the camera CMR and the lighting device OBL at the same time. Because it is easy to maintain the positional relationship between the camera CMR and the lighting device OBL. It is also possible to move only the lighting device OBL, or only the camera CMR, so that the bright field does not appear in areas where the crystal grains are not bent.

In addition, instead of the movement of the camera CMR and/or the lighting device OBL, the subject of the imaging object may be moved. For example, moving the dicing tape when the die on the dicing tape is bent, or moving the substrate on the adhesive platform.

In addition, it is ideal that the direction of the moving camera CMR and the lighting device OBL is opposite to the surface of the bright light. It is ideal to move the illuminated object in the same direction as the surface of the bright light. In addition, it is desirable that the field of view is approximately twice the size of the crystal grains.

Consider the bending of the crystal grains to change the position of the camera, the position of the illumination, or the position of the subject. In order to maintain the inspection sensitivity, it is ideal to form the maximum incident angle that does not accept the direct light reflected by the specular surface. Since the position can be adjusted according to the deformation of the subject, the inspection sensitivity of the die crack inspection can be The deterioration under the influence of bending is suppressed to a minimum.

In addition, oblique light illumination is usually configured as a pair. For example, two-direction oblique light stripe illumination or four-direction oblique light stripe illumination can be used. The influence of the oblique light illumination related to FIG. 7(a) on the oblique light illumination (hereinafter referred to as the opposite side oblique light illumination) in which the optical axis OA is located on the mirror surface will be explained using FIG. 21. FIG. 21(a) is a diagram schematically showing the state of incident light and reflected light illuminated by oblique light on the opposite side of the curved crystal grain before moving to the field of view. FIG. 21(b) is a diagram schematically showing the state of incident light and reflected light illuminated by oblique light to the opposite side of the non-curved crystal grain. FIG. 21(c) is a diagram schematically showing the state of incident light and reflected light illuminated by oblique light on the opposite side of the curved crystal grain before and after moving to the field of view.

The oblique light illumination that becomes the opposite side is that if the visual field movement described so far is performed, as shown in FIG. 21(b), the light directly reflected in the non-curved die D (hereinafter referred to as regular reflection light) will be emitted. Into the camera, the result of die D will be reflected in white. However, as shown in FIG. 21(c), the inclination of the reflected light also becomes larger in the crystal grain D with curvature, so it is not easily affected. In addition, when the illumination is in four directions, the light source in the orthogonal direction is not affected by this bending originally.

Next, the method of moving the field of view relative to the imaging target will be explained using FIGS. 8 and 9. Fig. 8 is a flowchart illustrating the first method. Fig. 9 is a flowchart illustrating the second method.

The first method is to confirm whether there is direct reflection of the irradiated light caused by bending and then relatively move the field of view of the die D. When direct light reflection occurs, relative visual field movement and re-examination are performed. The direction of movement of the field of view is determined from the position on the crystal grain where the direct reflected light occurs. It is suitable for the correspondence of the die on the wafer whose upward tilted position is unknown. Here, the so-called relative field of view movement means that by moving at least one of the camera CMR and the die D, the camera CMR's field of view of the die D will move. With the relative movement of the field of view, the center of the field of view of the camera CMR and the center of the die D will deviate.

As shown in Figure 8, after the component is transported (step S11), and the die is positioned by pattern matching, etc. (step S12), the surface illuminance of the die D is confirmed by the illuminance meter built in the camera CMR, and the light source is confirmed The presence or absence of specular reflection of direct light (direct reflection of irradiated light) (step S13). When there is specular reflection of the direct light from the light source, a relative field of view movement is performed (step S14). When the direct light without a light source is mirror-reflected, inspection for cracks and foreign matter of the die D is performed (step S15). In addition, it is also possible to first start the die crack inspection and then confirm whether there is direct reflection of the light source light. In addition, it is also possible to install an illuminance meter different from the camera CMR to confirm the surface illuminance of the die D.

The second method is to determine the bending direction when the die is laminated, imitate it from the number of laminated layers of the die, etc., depending on the shift amount (offset), and perform a relative visual field shift beforehand.

As shown in FIG. 9, after component transport (step S11), die positioning by pattern matching or the like (step S12), relative visual field movement is performed according to the number of layers of the positioned die (step S24). The crystal grains of the lower layer have less curvature, and the crystal grains of the upper layer have greater curvature. Therefore, the amount of movement increases as the upper layer is formed. Then, inspection of cracks and foreign matter of the die D is performed (step S25). In this method, it is also possible to add a confirmation process of whether there is direct reflection of the light source light and then adjust the amount of movement.

In addition, even if a relative field of view is moved, there may be cases where the area of direct light reflection cannot be completely obtained. This will be explained using FIG. 10. Fig. 10(a) is a photographed image before the field of view is moved. Fig. 10(b) is a captured image after the field of view has moved.

As shown in Figure 10(a), the completely whitened area (uncheckable area) before the visual field moves will appear in a ring. As shown in Figure 10(b), the area (uninspected area) that is completely whitened before the field of view moves will be reduced, but it will remain in the corners of the crystal grains. The completely white area is treated as a mask every time, so that the field of view is relatively moved to ensure the entire inspection area. For example, by shielding the non-inspectable area of Figure 10(a) for inspection, the inspectable area at the corner of the die can be ensured as the inspection area, and by shielding the non-inspectable area of Figure 10(b), it can be ensured that Figure 10(a) ) Is the uninspectable area as the inspection area. Therefore, the entire die can be secured as an inspection area. [Example]

Fig. 11 is a schematic top view showing the structure of the die bonder of the embodiment. Fig. 12 is a diagram illustrating a schematic configuration when viewed from the direction of arrow A in Fig. 11.

The die bonder 10 is roughly divided: a die supply unit 1 that supplies die D mounted on a substrate S (the substrate S is printed to become one or a plurality of final packaged product regions (hereinafter referred to as package regions P)). The pick-up part 2, the intermediate stage part 3, the joining part 4, the conveyance part 5, the board|substrate supply part 6, the board|substrate carry-out part 7, and the control part 8 which monitors and controls the operation of each part. The Y-axis direction is the front-rear direction of the die bonder 10, and the X-axis direction is the left-right direction. The die supply part 1 is arranged on the front side of the die bonder 10, and the bonding part 4 is arranged on the rear side.

First, the die supply unit 1 supplies the die D mounted on the package area P of the substrate S. The die supply unit 1 includes a wafer holding table 12 that holds a wafer 11 and an ejection unit 13 shown by a dotted line that ejects the die D from the wafer 11. The die supply unit 1 is moved in the XY direction by a driving means not shown, and the picked-up die D is moved to the position of the lifting unit 13.

The pick-up unit 2 has: a pick-up head 21 for picking up the die D, a Y-drive unit 23 for the pick-up head that moves the pick-up head 21 in the Y direction, and drives (not shown) that lift, rotate, and move the chuck 22 in the X direction Department. The pick-up head 21 has a chuck 22 (also refer to FIG. 12) for sucking and holding the raised die D at the front end, and picks up the die D from the die supply unit 1 and places it on the intermediate platform 31. The pick-up head 21 has each drive part which is not shown in figure which raises and lowers, rotates, and moves the chuck 22 in the X direction.

The intermediate platform 3 has an intermediate platform 31 on which the die D is temporarily placed, and a platform recognition camera 32 for recognizing the die D on the intermediate platform 31.

The bonding part 4 picks up the die D from the intermediate stage 31 and bonds it to the package area P of the substrate S being transported, or bonds it in the form of being laminated on the die that has been bonded to the package area P of the substrate S . The joint 4 has: Similar to the pick-up head 21, the die D is sucked and held to the bonding head 41 of the chuck 42 (also refer to FIG. 12) at the front end; Y driving part 43 that moves the bonding head 41 in the Y direction; Capture the position identification mark (not shown) of the package area P of the substrate S, and the substrate identification camera 44 for identifying the bonding position; and The board recognition camera 44 is driven in the XY driving unit 45 in the X-axis direction and the Y-axis direction. With such a configuration, the bonding head 41 corrects the pickup position and posture based on the imaging data of the platform recognition camera 32, picks up the die D from the intermediate platform 31, and bonds the die D to the substrate based on the imaging data of the substrate recognition camera 44 S.

The conveying unit 5 has a substrate conveying claw 51 for grasping and conveying the substrate S, and a conveying path 52 for moving the substrate S. The substrate S is moved by driving a nut (not shown) of the substrate transport claw 51 provided on the transport path 52 by a ball screw (not shown) provided along the transport path 52. With such a configuration, the substrate S is moved from the substrate supply section 6 to the bonding position along the conveyance path 52, and after bonding, it moves to the substrate unloading section 7 and delivers the substrate S to the substrate unloading section 7.

The control unit 8 is provided with a memory storing a program (software) for monitoring and controlling the operation of each part of the die bonder 10, and a central processing unit (CPU) for executing the program stored in the memory.

Next, the structure of the crystal grain supply unit 1 will be described with reference to FIGS. 13 and 14. Fig. 13 is an external perspective view showing the configuration of the crystal grain supply part of Fig. 11. Fig. 14 is a schematic cross-sectional view showing a main part of the crystal grain supply part of Fig. 13.

The die supply unit 1 includes a wafer holding table 12 that moves in the horizontal direction (XY direction), and a lift unit 13 that moves in the vertical direction. The wafer holding table 12 has: The expansion ring 15 holding the wafer ring 14; and It is held by the wafer ring 14, and the dicing tape 16 to which a plurality of dies D are bonded is positioned on the horizontal support ring 17. The jacking unit 13 is arranged inside the support ring 17.

The die supply unit 1 lowers the expansion ring 15 holding the wafer ring 14 when the die D is lifted up. As a result, the dicing tape 16 held on the wafer ring 14 will be stretched, and the spacing of the die D will be enlarged. Pickup improved. In addition, with the reduction in thickness, the adhesive for bonding the die to the substrate has changed from a liquid form to a film form. The adhesive between the wafer 11 and the dicing tape 16 is called a die attach film (DAF (Die Attach Film)). )18 film-like adhesive material. For the wafer 11 with the die bonding film 18, the dicing is performed on the wafer 11 and the die bonding film 18. Therefore, in the peeling process, the wafer 11 and the die bonding film 18 are peeled from the dicing tape 16. In addition, the following description ignores the existence of the die bonding film 18.

The die bonder 10 is a wafer recognition camera 24 that recognizes the posture and position of the die D on the wafer 11, a platform recognition camera 32 that recognizes the posture and position of the die D placed on the intermediate platform 31, and The substrate recognition camera 44 recognizes the installation position on the bonding platform BS. It is necessary to correct the posture deviation between the recognition cameras by the platform recognition camera 32 that participates in the pickup of the bonding head 41 and the substrate recognition camera 44 that participates in the bonding of the bonding head 41 to the mounting position. In this embodiment, together with the wafer identification camera 24, the platform identification camera 32, and the substrate identification camera 44, the illuminating device described later is used to perform the surface inspection of the die D.

Next, the illumination related to surface inspection will be explained using FIG. 15. FIG. 15 is a diagram showing the arrangement of the lighting device of the board recognition camera.

The substrate recognition camera 44 is vertically arranged on the surface of the die D. That is, the optical axis is perpendicular to the surface of the die D. The oblique light illuminating device 46 is illuminated by oblique light in two directions of the oblique light bar illuminating devices 46a and 46b, and illuminates the die D at a predetermined angle (θ1) with respect to the optical axis. The substrate recognition camera 44 and the oblique light illuminating device 46a, 46b are fixed to the movable part 45a. The movable part 45a can be moved in the X-axis direction by the X driving part 45b, and the X driving part 45b can be moved by the Y driving part 45c. Move in the Y-axis direction. Here, the incident angle (θ1) is the same as in FIG. 6. The control unit 8 uses the XY drive unit 45 to move the substrate recognition camera 44 and the oblique light illuminating device 46. By shifting the center of the field of view from the center of the die D, the light directly reflected in the upturned area of the die D It does not enter the substrate recognition camera 44, and the bright field may not appear.

The lighting devices of the wafer recognition camera 24 and the platform recognition camera 32 are also the same as the lighting devices of the substrate recognition camera 44. However, the wafer recognition camera 24 and its illuminating device, and the stage recognition camera 32 and its illuminating device may not be configured to be moved by the same drive unit as the XY drive unit 45. The control unit 8 does not move the wafer recognition camera 24 and its illuminating device, but moves the wafer holding table 12 or the intermediate platform 31. By shifting the center of the field of view from the center of the die D, it is tilted upwards of the die D The light directly reflected in the area will not enter the wafer identification camera 24 or the platform identification camera 32, and the bright field may not appear.

Next, the control unit 8 will be explained using FIG. 16. Fig. 16 is a block diagram showing a schematic configuration of a control system of the die bonder of Fig. 11.

The control system 80 includes a control unit 8, a drive unit 86, a signal unit 87 and an optical system 88. The control unit 8 is roughly divided, and mainly includes a control and arithmetic device 81 composed of a CPU (Central Processor Unit), a memory device 82, an input/output device 83, a bus line 84, and a power supply unit 85. The storage device 82 is a main storage device 82a composed of RAM for storing processing programs and the like, and an auxiliary storage device 82b composed of HDD or SSD that stores control data and image data necessary for control. The input/output device 83 has: a monitor 83a for displaying device status or information, a touch panel 83b for inputting instructions from an operator, a mouse 83c for operating the monitor, and an image capturing device for capturing image data from the optical system 88入装置83d. In addition, the I/O device 83 is a motor control device 83e having a drive unit 86 that controls the XY stage (not shown) of the die supply unit 1, the ZY drive shaft of the bonding head stage, and the XY drive shaft of the substrate recognition camera. And an I/O signal control device 83f that takes in signals or controls signals from the signal unit 87 such as switches of various sensors, lighting devices, and the like. The optical system 88 includes a wafer identification camera 24, a platform identification camera 32, and a substrate identification camera 44. The control/calculating device 81 takes in necessary data via the bus line 84, performs calculations, and sends the information to the control of the pickup 21 or the like or the monitor 83a or the like.

The control unit 8 stores the image data captured by the wafer recognition camera 24, the platform recognition camera 32, and the substrate recognition camera 44 in the memory device 82 via the image capturing device 83d. With software programmed according to the saved image data, the control/arithmetic device 81 is used to perform positioning of the die D and the package area P of the substrate S, and surface inspection of the die D and the substrate S. Based on the positions of the die D and the package area P of the substrate S calculated by the control and arithmetic device 81, the drive unit 86 is actuated by the motor control device 83e by software. Through this process, the die on the wafer is positioned, and the driving section of the pick-up part 2 and the bonding part 4 are operated to bond the die D to the packaging area P of the substrate S. The wafer identification camera 24, the platform identification camera 32, and the substrate identification camera 44 used are gray scale, color, etc., and the light intensity is digitized.

Next, use Figures 17 to 19 to explain the die bonding process. Fig. 17 is a flowchart illustrating the die bonding process of the die bonder of Fig. 11. FIG. 18 is a flowchart centered on the process of imaging by the wafer recognition camera. FIG. 19 is a flow chart centered on the process of imaging by the substrate recognition camera.

In the die bonding process of the embodiment, first, as shown in FIG. 17, the control unit 8 takes out the wafer ring 14 holding the wafer 11 from the cassette and places it on the wafer holding table 12, and places the wafer The holding table 12 is transported to a reference position (wafer loading (process P1)) where the die D is picked up. Next, the control unit 8 performs fine adjustment (alignment) from the image obtained by the wafer recognition camera 24, so that the placement position of the wafer 11 will exactly match the reference position.

Next, the control unit 8 moves the wafer holding table 12 on which the wafer 11 is placed at a predetermined pitch and maintains it horizontally, thereby arranging the first picked die D at the pickup position (die transfer (process) P2)). In addition, the pickup position of the die D is also the recognition position of the die D of the camera 24 by the wafer recognition. The wafer 11 is inspected for each die by an inspection device such as a probe in advance, and map data indicating good and bad for each die is generated and stored in the memory device 82 of the control unit 8. The judgment of whether the die D to be picked up is a good product or a defective product is based on the map data. When the die D is a defective product, the control unit 8 moves the wafer holding table 12 on which the wafer 11 is placed at a predetermined pitch, and arranges the die D to be picked up at the pickup position to skip the defective product.的晶粒 D.

Next, as shown in FIG. 18, the control unit 8 sets the illumination output of the wafer recognition camera 24 to a value for die positioning (step S31). The control unit 8 captures the main surface (upper surface) of the die D to be picked up by the wafer recognition camera 24, and obtains an image (step S32). From the acquired image, the amount of positional deviation from the pickup position of the die D to be picked up is calculated, and the position of the die D is measured (step S33). Based on this amount of positional deviation, the control unit 8 moves the wafer holding table 12 on which the wafer 11 is placed, and accurately arranges the die D to be picked at the pickup position (die positioning (process P3)).

Next, as shown in FIG. 18, the control unit 8 changes the illumination output of the wafer recognition camera 24 to a value for die crack inspection (step S41). The control unit 8 captures the main surface of the die D to be picked up by the wafer recognition camera 24, and obtains an image (step S42). As described later, the control unit 8 confirms the surface density of the crystal grain D from the acquired image, and detects the presence or absence of a specular reflection area (step S43). When there is a specular reflection area, the control unit 8 moves the wafer holding table 12 in the direction of the specular reflection area (step S44). In addition, when the illuminating device is mounted on a driving stage different from the wafer identification camera 24, only the illuminating device may be moved. When the lighting device is a bar-shaped oblique light, the side that is affected can also be turned off. The control unit 8 obtains the camera image again. In step S43, when there is no regular reflection area, an inspection for crystal grain cracks and foreign matter (surface inspection) is performed (process P4). Here, the control unit 8 proceeds to the next process (process P9 described later) when it is determined that there is no problem on the surface of the crystal grain D, but when it is determined that there is a problem, it performs skip processing or an error stop. The skip process is step P9 where the die D is skipped, the wafer holding table 12 on which the wafer 11 is placed is moved at a predetermined pitch, and the die D to be picked up next is arranged at the pickup position.

The control section 8 places the substrate S on the conveyance path 52 in the substrate supply section 6 (substrate loading (process P5)). The control unit 8 moves the substrate transport pawl 51 that grips and transports the substrate S to the bonding position (substrate transport (process P6)).

Next, as shown in FIG. 19, the control part 8 moves the board|substrate recognition camera 44 to the imaging position (tab imaging position) of the package area P of a bonding object (step S71). The control unit 8 sets the illumination output of the board recognition camera 44 to a value for board positioning (step S72). The control unit 8 captures the substrate S by the substrate recognition camera 44 and obtains an image (step S73). The positional deviation amount of the package area P of the substrate S is calculated from the acquired image, and the position is measured (step S74). The control unit 8 moves the substrate S based on the amount of positional deviation, and performs positioning (substrate positioning (process P7)) for accurately arranging the package region P of the bonding target at the bonding position.

Next, as shown in FIG. 17, the control unit 8 performs a surface inspection of the package area P of the substrate S from the image obtained by the substrate recognition camera 44 (process P8). Here, the control unit 8 determines whether there is a problem in the surface inspection. When it is determined that there is no problem on the surface of the package area P of the substrate S, it proceeds to the next process (process P9 described later), but when it is determined that there is a problem, it Visually confirm the surface image, or perform high-sensitivity inspections or inspections that have changed lighting conditions. If there is a problem, skip the process, and if there is no problem, perform the next process. The skip process is to skip the process P10 of the appropriate label to the packaging area P of the substrate S, and then register the substrate construction information for failure.

The control unit 8 uses the die supply unit 1 to correctly arrange the die D to be picked up at the pickup position, and then picks up the die D from the dicing tape 16 by the pickup head 21 including the chuck 22 (die manipulation (Project P9)), placed on the middle platform 31 (Project P10). The control unit 8 performs the detection of the posture deviation (rotation deviation) of the crystal grain placed on the intermediate platform 31 (the position inspection of the crystal grain (process P11)) by capturing images by the platform recognition camera 32. When there is a posture deviation, the control unit 8 uses a swing drive device (not shown) provided on the intermediate platform 31 to swing the intermediate platform 31 on a surface parallel to the mounting surface having the mounting position to correct the posture deviation.

The control unit 8 performs the surface inspection of the die D from the image obtained by the platform recognition camera 32 (process P12). Here, when the control unit 8 determines that there is no problem on the surface of the die D, it proceeds to the next process (process P13 described later), but when it determines that there is a problem, it performs skip processing or an error stop. The skipping process is to place the die on a defective tray not shown, etc., and after step P13 of skipping the die D, the wafer holding table 12 on which the wafer 11 is placed is moved at a predetermined pitch. , Place the die D to be picked up at the pickup position.

The control unit 8 picks up the die D from the intermediate platform 31 by the bonding head 41 including the chuck 42, and the die bonding (die attach) is in the package area P of the substrate S or has been bonded. Die in the package area P of the substrate S ((Process P13)).

Next, as shown in FIG. 19, the control unit 8 moves the substrate recognition camera 44 to the imaging position of the bonded die D (step S141). The control unit 8 sets the illumination output of the substrate recognition camera 44 to a value for die positioning (step S142). The control unit 8 captures the die D by the substrate recognition camera 44, and obtains an image (step S143). The position of the die D is measured from the acquired image (step S144). The control unit 8 checks whether the bonding position of the die D is correct after bonding the die D (inspection of the relative position of the die and the substrate (process P14)). At this time, calculate the center of the die and the center of the label in the same way as the position of the die, and check whether the relative position is correct.

Next, the control unit 8 moves the substrate recognition camera 44 to the imaging position for die crack inspection (step S151). In the case of a laminated product, as the upper layer is stacked, the direction of the offset is determined in advance. In this case, the bending direction is also determined. Therefore, as long as the bending direction is taught in advance, the amount of visual field movement of the irregular reflection is taught, and the inspection is moved from the initial position to the position including the deviation. The number of activations of the vision movement. The control unit 8 changes the illumination output of the board recognition camera 44 to a value for die crack inspection (step S152). The control unit 8 captures the die D by the substrate recognition camera 44, and obtains an image (step S153). As described later, the control unit 8 confirms the surface density of the crystal grain D from the acquired image, and detects the presence or absence of a specular reflection area (step S154). When there is a regular reflection area, the control unit 8 moves the substrate recognition camera 44 in a direction opposite to the regular reflection area (step S155). In addition, as in the second modification described later, when the illuminating device is mounted on a table that is driven differently from the substrate recognition camera 44, only the illuminating device may be moved. When the lighting device is a bar-shaped oblique light, the side that is affected can also be turned off. The control unit 8 obtains the camera image again. In step S154, when there is no regular reflection area, inspection of die cracks and foreign matter (surface inspection of die D and substrate S) is performed (process P15). Here, when the control unit 8 determines that there is no problem on the surface of the die D, it proceeds to the next process (process P9 described later), but when it determines that there is a problem, it performs skip processing or an error stop. In the skipping process, the defective registration of the board construction information is performed.

From now on, the die D will be bonded to the package area P of the substrate S one by one according to the same procedure. When the bonding of one substrate is completed, the substrate S is moved to the substrate unloading section 7 by the substrate transfer claw 51 (substrate transfer (process P16)), and the substrate S is delivered to the substrate unloading section 7 (substrate unloading (process P17)) ).

In the future, the die D will be peeled off the dicing tape 16 one by one according to the same procedure (Project P9). When the picking of all the die D from which the defective product is removed is completed, the dicing tape 16 and the wafer ring 14 that hold the die D in the shape of the wafer 11 are unloaded to the wafer cassette (process P18).

Next, the method of measuring the bending position (specular reflection area) of the crystal grain will be explained with reference to FIG. 20. Figure 20 (a) is an inspection image of the die. Figure 20(b) is a reference image of the die. Fig. 20(c) is a difference image of the inspection image of Fig. 20(a) and the reference image of Fig. 20(b). Fig. 20(d) is an image obtained by binarizing the difference image of Fig. 20(c). FIG. 20(e) is a diagram explaining the judgment of the presence or absence of the curvature of crystal grains.

The control unit 8 calculates a difference image by calculating the difference between the inspection image of the crystal grain in FIG. 20(a) and the reference image of the crystal grain in FIG. 20(b). As shown in Figure 20(c), the difference image outside the regular reflection area is blackened, the regular reflection area is whitened, and the boundary area is blurred. The control unit 8 binarizes the difference image based on a certain shading threshold value, and obtains the image shown in FIG. 20(d). Near the edge of the image at this time, for example, four inspection areas as shown in FIG. 20(e) are provided. If there is a white area above a certain area threshold value of each inspection area, it is judged that there is a curve, and the direction of the curve is judged from the position of the white area. In this case, it was judged that the lower side of the crystal grain was bent.

The surface inspection for cracks can be performed in at least one of the die supply part, the intermediate platform, and the bonding platform in the place where the die position identification is performed, but it is more desirable to perform it in all locations. If it is performed in the die supply part, cracks can be detected early. If it is performed on an intermediate platform, it is possible to detect cracks that cannot be detected in the die supply part before bonding or cracks that occur after the pick-up process (cracks that have not been surfaced before the bonding process). In addition, if it is performed on the bonding platform, it is possible to detect cracks that cannot be detected in the die supply part and the intermediate platform before the bonding of the next die stack or before the substrate is discharged (the ones that are not surfaced before the bonding process Cracks) or cracks generated after the joining process.

<Modifications> Hereinafter, a few examples will be given for representative modified examples. In the description of the following modification examples, parts having the same configuration and functions as those described in the above-mentioned embodiment are denoted by the same reference numerals as in the above-mentioned embodiment. In addition, the description of such a part is within a range that is not technically contradictory, and appropriately refers to the description of the above-mentioned embodiment. In addition, part of the above-mentioned embodiments and all or part of the plural modified examples can be appropriately combined and applied within a range that is not technically contradictory.

(First modification) Fig. 22 is a schematic perspective view showing a board recognition camera and a lighting device according to a first modification.

In the case of the embodiment, the oblique light illuminating device 46 is a two-directional oblique light bar illumination, but as shown in FIG. 22, it may also be a four-directional oblique light bar illumination. The oblique light illuminating device 46 is composed of oblique light bar illuminating devices 46a to 46c, and an oblique light bar illuminating device (not shown) located on the opposite side of the oblique light bar illuminating device 46c and the substrate recognition camera 44, which is mounted on the substrate recognizing camera 44 on the side. The board recognition camera 44 is fixed to the movable part 45a, the movable part 45a is movable in the X-axis direction by the X driving part 45b, and the X driving part 45b is movable in the Y-axis direction by the Y driving part 45c.

As shown in Figure 22(b), when the die D is stacked in the Y-axis direction, the direct reflection caused by the upturned area of the die D will be generated on the positive side of the Y-axis (the figure on the right side). Right side), therefore, the control unit 8 moves the substrate recognition camera 44 and the oblique light illuminating device 46 in the direction of the arrow (the negative side of the Y axis (the left side of the figure)) to pick up the die D. As shown in Figure 22(c), when the die D is shifted to the X-axis direction and stacked, the direct reflection caused by the upwardly tilted area of the die D will be generated on the negative side of the X-axis (figure surface Therefore, the control unit 8 moves the substrate recognition camera 44 and the oblique light illuminating device 46 in the direction of the arrow (the positive side of the X axis (the left side of the figure)) to pick up the die D.

(Second modification) FIG. 23 is a schematic perspective view showing a board recognition camera and a lighting device according to a second modification.

In the case of the embodiment and the first modification, the oblique light illuminating device 46 is configured to move in the same positional relationship as the board recognition camera 44, but it may be configured to move independently of the board recognition camera 44 as shown in FIG. 23 . The oblique light illuminating device 46a~46d of the oblique light illuminating device 46 is fixed to the movable part 47a. The movable part 47a can be moved in the X-axis direction by the X driving part 47b, and the X driving part 47b can be moved by the Y driving part 47c. To move in the Y-axis direction. The board recognition camera 44 is fixed to the movable part 45a, the movable part 45a is movable in the X-axis direction by the X driving part 45b, and the X driving part 45b is movable in the Y-axis direction by the Y driving part 45c.

(Third modification) FIG. 24 is a schematic perspective view showing a wafer recognition camera and an illuminating device according to a third modification example.

In the case of the embodiment, the illuminating device of the wafer identification camera 24 is the same as the oblique light illuminating device 46 with two-directional oblique light bar illumination, but it can also be four-directional oblique light bar illumination as shown in FIG. 24. The oblique light illuminating device 26 is composed of oblique light strip illuminating devices 26a to 26d. The wafer holding table 12 is fixed to the X driving part 19b, the X driving part 19b is movable in the X axis direction, and the X driving part 19b is movable in the Y axis direction by the Y driving part 19c. Furthermore, it is also possible to turn off the side of the reflected light that affects the illumination of the oblique light bar in multiple directions.

In addition, the above description specifically describes the invention developed by the inventors based on the embodiments and examples, but the present invention is not limited to the above-mentioned embodiments and modifications, and various modifications can of course be implemented.

For example, in the embodiment, the two-direction oblique light bar illumination is described as an example of the oblique light illumination device, but it is also possible to use four-direction oblique light bar illumination, or use one-direction oblique light bar illumination.

In addition, in the embodiment, the bending position (specular reflection area) of the crystal grain is measured in advance by camera image recognition, but it is also possible to use a sensor such as a laser displacement system to detect the direction of the bending, and to use this The lighting device or the camera moves. In addition, the lattice-like pattern can also be projected onto the surface of the crystal grain, and the bending direction can be judged based on the disorder of the crystal lattice.

In addition, in the embodiment, the die appearance inspection and identification are performed after the die position identification, but the die position identification may also be performed after the die appearance inspection and identification.

In addition, in the embodiment, DAF is attached to the back surface of the wafer, but DAF may be absent.

In addition, in the embodiment, each of the pickup head and the bonding head is provided, but each may be two or more. In addition, the embodiment is provided with an intermediate platform, but there may be no intermediate platform. In this case, the pickup head and the bonding head can also be used together.

In addition, in the embodiment, the surface of the die is turned up to be bonded, but after picking up the die, the front and back of the die may be reversed, and the back side of the die may be turned up to be bonded. In this case, the intermediate platform may not be provided. This device is called Flip Chip Bonder.

In addition, in the embodiment, the bonding head is provided, but the bonding head may not be provided. In this case, the picked up crystal grains are placed in a container or the like. This device is called a pickup device. In addition, the surface inspection for cracks in this case can also be carried out in a container or the like in which the picked-up crystal grains are placed.

10: Die bonding machine (semiconductor manufacturing equipment) 8: Control Department D: Die S: substrate CMR: Camera (camera device) OBL: Lighting device OA: Optical axis VF: Field of View

[Fig. 1] is a diagram schematically showing coaxial illumination. [Fig. 2] is a diagram schematically showing oblique light illumination. Fig. 3 is a diagram schematically showing the conditions of incident light and reflected light of oblique light illumination. Fig. 4 is a diagram schematically showing the conditions of incident light and reflected light when the incident angle is smaller than that of Fig. 3. [Fig. 5] is an example of a captured image using the oblique light bar illumination of Fig. 4. [Fig. 6] is a diagram explaining the problem of oblique light illumination. [Fig. 7] is a diagram for explaining the technique related to the embodiment. [Fig. 8] is a flowchart illustrating the first method. [Fig. 9] is a flowchart illustrating the second method. [Fig. 10] is a diagram illustrating a case where the area of direct light reflection cannot be completely obtained even if the field of view is moved. Fig. 11 is a schematic top view showing a configuration example of the die bonder of the embodiment. Fig. 12 is a diagram illustrating a schematic configuration when viewed from the direction of arrow A in Fig. 11. [Fig. 13] Fig. 13 is an external perspective view showing the configuration of the crystal grain supply part of Fig. 11. Fig. 14 is a schematic cross-sectional view showing the main part of the crystal grain supply part of Fig. 13. Fig. 15 is a diagram showing the arrangement of the lighting device of the board recognition camera. [Fig. 16] is a block diagram showing the schematic configuration of the control system of the die bonder of Fig. 11. [Fig. [FIG. 17] is a flowchart explaining the die bonding process of the die bonder of FIG. 11. [FIG. [Fig. 18] is a flowchart centered on the process of imaging by a wafer recognition camera. [Fig. 19] is a flowchart centered on the process of imaging by a substrate recognition camera. Fig. 20 is a diagram illustrating a method of measuring the bending position (specular reflection area) of crystal grains. [Fig. 21] is to explain the influence of the oblique light illumination of Fig. 7 on the oblique light illumination of the mirror-surface object with the optical axis. [Fig. 22] is a schematic perspective view showing the board recognition camera and the lighting device of the first modification. [Fig. 23] is a schematic perspective view showing a board recognition camera and a lighting device according to a second modification. [Fig. 24] is a schematic perspective view showing a wafer recognition camera and an illuminating device according to a third modification.

D: Die

S: substrate

CMR: Camera (camera device)

LNS: lens

OBL: Lighting device

OA: Optical axis

RL1: reflected light

VF: Field of View

Claims (17)

A semiconductor manufacturing apparatus, characterized by comprising: an imaging device that takes a die; an illuminating device that irradiates light at a predetermined angle from the die to the optical axis of the imaging device; and a device that controls the imaging device and the illuminating device In the control section, the predetermined angle is an angle at which the light irradiated from the lighting device does not enter the imaging device even if the crystal grains are directly reflected when the crystal grains are flat, and the position of the imaging device and the lighting device The relationship is fixed, and the control unit is configured such that when the crystal grains are not flat, the light irradiated from the lighting device is directly reflected on the crystal grains and does not enter the imaging device. At least one of the imaging device, the illuminating device, and the crystal grain is moved, and at least one of the imaging device and the crystal grain is moved in such a way that the crystal grain will deviate more than the center of the field of view of the imaging device, confirming the aforementioned When it is judged that the surface illuminance of the die is that the light irradiated from the illuminating device is directly reflected by the die and is incident on the imaging device, at least one of the imaging device and the die is moved. A semiconductor manufacturing device, characterized by comprising: an imaging device that captures crystal grains; and an illuminating device that irradiates light at a predetermined angle from the crystal grain to the optical axis of the imaging device; A control unit that controls the imaging device and the lighting device; and means for detecting the bending of the crystal grains. The predetermined angle is when the crystal grains are flat, the light irradiated from the lighting device is even directly on the crystal grains. The reflection does not enter the angle of the imaging device, the positional relationship between the imaging device and the illuminating device is fixed, and the control unit is configured to use the light irradiated from the illuminating device when the crystal grains are uneven. At least one of the imaging device, the lighting device, and the crystal grain will be moved in such a way that the crystal grain is directly reflected without entering the imaging device, so that the crystal grain will be more than the center of the field of view of the imaging device. The deflection method moves at least one of the imaging device and the die, and when the bending is detected, the field of view of the imaging device is moved to either one or both of the front and back of the detected bending direction. The semiconductor manufacturing apparatus according to claim 2, further comprising: a bonding head for bonding the die to the substrate or the bonded die, and the control unit is configured to use the imaging device and the lighting device to capture The aforementioned substrate or die bonded to the die. The semiconductor manufacturing apparatus of claim 1, wherein a means for detecting the bending of the die is provided, and the control unit moves the field of view of the imaging device before and after the detected bending direction when the bending is detected Either party or both sides. A semiconductor manufacturing apparatus, characterized by comprising: an imaging device that takes a die; an illuminating device that irradiates light at a predetermined angle from the die to the optical axis of the imaging device; and a device that controls the imaging device and the illuminating device In the control section, the predetermined angle is an angle at which the light irradiated from the lighting device does not enter the imaging device even if the crystal grains are directly reflected when the crystal grains are flat, and the position of the imaging device and the lighting device The relationship is fixed, the crystal grains are the crystal grains laminated on the crystal grains, and the control unit is configured such that when the crystal grains are uneven, the light irradiated from the lighting device will be affected by the crystal grains. Directly reflect without entering the imaging device, move at least one of the imaging device, the lighting device, and the crystal grains, and move the crystal grains further than the center of the field of view of the imaging device. At least one of the imaging device and the crystal grain moves, and the field of view of the imaging device is moved according to the number of layers to be laminated. The semiconductor manufacturing apparatus of claim 5, wherein the direction in which the field of view of the imaging device is moved is the same direction as the shifted direction of the die laminated on the die, and the movement is either forward or backward or Both sides. The semiconductor manufacturing apparatus according to any one of claims 1, 2, or 5, wherein the control unit is configured to When the field of view of the imaging device moves, when the light irradiated from the illuminating device is directly reflected by the crystal grain and is incident on the imaging device, the light irradiated from the illuminating device is directly reflected on the crystal grain without being emitted. The area entered into the imaging device forms the entire area of the crystal grains, and the imaging is performed while shifting the center of the field of view of the imaging device and the center of the crystal grains. A semiconductor manufacturing device characterized by: an imaging device that captures crystal grains; an illumination device that irradiates light at a predetermined angle from the crystal grains to the optical axis of the imaging device; and controls the imaging device and the illumination device Section; and a die supply section with a wafer ring jig holding the dicing tape attached to the die, the predetermined angle is when the die is flat, the light irradiated from the lighting device is even in the die The grains are directly reflected and do not enter the angle of the aforementioned imaging device. The positional relationship between the aforementioned imaging device and the aforementioned illumination device is fixed. The aforementioned control unit is configured to illuminate from the aforementioned illumination device when the aforementioned grains are uneven The light will be directly reflected by the crystal grain without entering the imaging device, so that at least one of the imaging device, the lighting device, and the crystal grain is moved so that the crystal grain is smaller than the field of view of the imaging device. In a way that the center is more deviated, at least one of the aforementioned camera device and the aforementioned die is moved, The aforementioned imaging device and the aforementioned lighting device are used to capture the aforementioned die attached to the aforementioned dicing tape. The semiconductor manufacturing apparatus of claim 1, which further includes a bonding head for bonding the die to the substrate or the die that has been bonded, and the control unit uses the imaging device and the lighting device to pick up the substrate Or the die bonded to the die. The semiconductor manufacturing apparatus of claim 1, further comprising: a pick-up head for picking up the die; and an intermediate platform on which the picked-up die is placed, and the control unit uses the camera device and the lighting device to pick up the die Die placed on the aforementioned intermediate platform. A method of manufacturing a semiconductor device, which is characterized by including: (a) a process of loading a substrate into a semiconductor manufacturing device, the semiconductor manufacturing device is provided with: an imaging device that picks up a die; and placing the die on the optical axis of the imaging device , A lighting device that irradiates light at a predetermined angle; and a control unit that controls the imaging device and the lighting device; the predetermined angle is that when the crystal grains are flat, the light irradiated from the lighting device is even on the crystal The particles are directly reflected and do not enter the angle of the aforementioned imaging device, The control unit is configured such that when the crystal grains are uneven, the light irradiated from the lighting device is directly reflected on the crystal grains and does not enter the imaging device, so that the imaging device and the lighting device And at least one of the aforementioned die; (b) the process of moving in the wafer ring jig holding the dicing tape with the die attached; (c) the process of picking up the aforementioned die; and (d) the process of picking up the aforementioned die The process of bonding the die to the aforementioned substrate or the die that has been bonded to the aforementioned substrate. According to claim 11, the method of manufacturing a semiconductor device, wherein the (c) engineering system places the picked-up die on the intermediate platform, and the (d) engineering system picks up the die placed on the intermediate platform. The method of manufacturing a semiconductor device of claim 11, which further includes (f) before the step (c), confirming the surface illuminance of the die, and determining that the light irradiated from the lighting device is directly reflected on the die When it is incident on the imaging device, the light irradiated from the illuminating device is directly reflected on the die without entering the imaging device, and the center of the die is shifted from the center of the field of view of the imaging device. , And carry out the project of surface inspection of the aforementioned crystal grains. The method for manufacturing a semiconductor device of claim 11, which further includes (g) after the step (d), confirming the surface illuminance of the die, and determining that the light irradiated from the lighting device is directly reflected on the die When it is shot into the aforementioned imaging device, The incident light is directly reflected by the crystal grain without entering the imaging device, and the center of the field of view of the imaging device is shifted from the center of the crystal grain to perform the process of inspecting the surface of the crystal grain. The method of manufacturing a semiconductor device according to claim 11, which further includes (g) after the step (d), shifting the center of the field of view of the imaging device from the center of the crystal grain according to the layer layered on the crystal grain In order to perform the process of surface inspection of the aforementioned crystal grains. The method of manufacturing a semiconductor device according to claim 12, which further includes (h) after the step (c) and before the step (d), confirming the surface illuminance of the die, and judging that it is the light irradiated from the lighting device When the crystal grains are directly reflected and incident on the imaging device, the light irradiated from the illumination device is directly reflected on the crystal grains and does not enter the imaging device, thereby shifting the field of view of the imaging device The center and the center of the aforementioned crystal grain, and the process of inspecting the surface of the aforementioned crystal grain. The method of manufacturing a semiconductor device according to any one of claims 13, 14 or 16, wherein even if the crystal grain is moved from the center of the imaging device to move the field of view, the light irradiated from the lighting device will be When the crystal grains are directly reflected and incident to the imaging device, the light irradiated from the illumination device is directly reflected on the crystal grains without being incident to the imaging device to form the entire area of the crystal grains. The imaging is performed while shifting the center of the field of view of the imaging device and the center of the crystal grain.

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