TWI724749B - Inspection equipment for glass substrate and method thereof - Google Patents

Abstract

An inspection equipment for inspecting a glass substrate having plural data lines and plural gate lines, comprises a magnetoresistance (MR) sensing device having two first MR sensors and two second MR sensors, when the MR sensing device moves along a direction perpendicular to the plural electrified gate lines, the two second MR sensors sense sequentially a first difference of two induced currents of two neighboring gate lines, and one of the two neighboring gate lines has a circuit abnormality when the first difference is not equal to zero, and when the MR sensing device moves along a direction perpendicular to the plural electrified data lines, the two first MR sensors sense sequentially a second difference of two induced currents of two neighboring data lines, and one of the two neighboring data lines has a circuit abnormality when the second difference is not equal to zero.

Description

Glass substrate detection equipment and method

The invention relates to a detection device and a method for detecting a glass substrate with a plurality of data lines, a plurality of gate lines, a horizontal edge and a vertical edge, and in particular to a detection device including a horizontal sensing unit having at least Two first magnetoresistive sensors and a vertical sensing unit are provided with one of at least two second magnetoresistive sensors detecting equipment and its detecting method.

The current detection equipment used to detect open/short/bridging of glass substrates still needs to improve the accuracy of detecting open/short/bridging, so as to avoid the current detection of magnetoresistive sensors in the prior art. It is subject to the problem of magnetic field interference generated by the signal source supplying voltage to the gate line or the data line to further reduce defects and reduce production costs. How to improve the function of the existing inspection equipment for inspecting the open/short/bridge of the glass substrate so that the detection rate of the circuit on the glass substrate can be improved, which is a question worth pondering.

For this reason, in view of the lack of conventional technology, the inventor thought and improved the idea of invention, and finally invented the "glass substrate inspection equipment and method" of this case.

The main purpose of the present invention is to provide a detection device and method for detecting a glass substrate with a plurality of data lines, a plurality of gate lines, a horizontal edge and a vertical edge, the detection device including a detection device with at least two A horizontal sensing unit of a first magnetoresistive sensor, and a vertical sensing unit having at least two second magnetoresistive sensors, wherein the at least two second magnetoresistive sensors are used for sequential sensing The first difference of one of the two induced currents on two adjacent gate lines. When the first difference is not zero, one of the two adjacent gate lines has a line abnormality, and the at least two first magnetic The resistance sensor is used to sequentially sense a second difference value of one of the two induced currents on two adjacent data lines. When the second difference value is not zero, one of the two adjacent data lines has an abnormality. Improve the detection rate of circuit abnormalities such as open circuit, short circuit and/or jumper on the glass substrate.

Another main purpose of this case is to provide a detection device for detecting a glass substrate with a plurality of data lines, a plurality of gate lines, a horizontal edge and a vertical edge, including a magnetoresistive sensing device, the magnetic The resistance sensing device includes a horizontal sensing unit with at least two first magnetoresistive sensors, and a vertical sensing unit with at least two second magnetoresistive sensors, wherein when the magnetoresistive sensing device When moving along the horizontal edge and perpendicular to the plurality of gate lines, and when a first voltage is provided to the plurality of gate lines from an external power source, the at least two second magnetoresistive sensors are respectively used in sequence Sensing a first difference of one of the two sensing currents of two adjacent gate lines, when the first difference is not zero, one of the two adjacent gate lines has a first line abnormality, and When the magnetoresistive sensing device moves along the vertical edge and perpendicular to the plurality of data lines, and a second voltage is provided from the external power supply When the plurality of data lines are provided, the at least two first magnetoresistive sensors are respectively used to sequentially sense the second difference of one of the two sensing currents of two adjacent data lines, when the second difference When it is not zero, one of the two adjacent data lines has a second line abnormality.

The main purpose of this case is to provide a detection device for detecting a glass substrate with a plurality of data lines and a plurality of gate lines, including a magnetoresistive sensing device, the magnetoresistive sensing device including a level sensor The sensing unit has at least two first magnetoresistive sensors, and a vertical sensing unit has at least two second magnetoresistive sensors, wherein when the magnetoresistive sensing device is perpendicular to the plurality of gates When the direction of the pole line moves, and the plurality of gate lines receive a first voltage, the at least two second magnetoresistive sensors are used to sequentially sense the first difference of one of the two induced currents on two adjacent gate lines When the first difference is not zero, one of the two adjacent gate lines has a line abnormality, and when the magnetoresistive sensing device moves in a direction perpendicular to the plurality of data lines, and When the plurality of data lines receive a second voltage, the at least two first magnetoresistive sensors are used to sequentially sense a second difference between two induced currents on two adjacent data lines. When the second difference is not When it is zero, one of the two adjacent data lines is abnormal.

Another main purpose of this case is to provide a method for detecting a glass substrate with a plurality of data lines and a plurality of gate lines using a detection device with a magnetoresistive sensing device, wherein the magnetoresistive sensing device includes a A horizontal sensing unit with at least two first magnetoresistive sensors and a vertical sensing unit with at least two second magnetoresistive sensors. The method includes: when the magnetoresistive sensing device is perpendicular to Of the multiple gate lines When moving in the direction and an external power supply provides a first voltage to the plurality of gate lines, the at least two second magnetoresistive sensors sequentially sense one of the two induced currents of two adjacent gate lines A first difference, wherein when the first difference is not zero, one of the two adjacent gate lines has a first line abnormality; and when the magnetoresistive sensing device is perpendicular to the plurality of When the direction of the data line moves, and the external power supply provides a second voltage to the plurality of data lines, the at least two first magnetoresistive sensors sequentially sense two induced currents of two adjacent data lines A second difference value, wherein when the second difference value is not zero, one of the two adjacent data lines has a second line abnormality.

Another main purpose of this case is to provide a method for detecting a glass substrate with a plurality of data lines and a plurality of gate lines using a magnetoresistive sensing device, wherein when the glass substrate is placed on a detection plane, The glass substrate has an upper side, a left side, a lower side, and a right side. The detection plane has a signal source for supplying power to the plurality of data lines and the plurality of gate lines so as to be detected and the signal source is placed The left side and the lower side are the grounding side of each gate line, and the right side is the grounding side of each data line. The method includes: positioning the magnetoresistive sensing device above the glass substrate; making the magnetoresistive The sensing device senses the plurality of gate lines one by one along the lower side; and the magnetoresistive sensing device senses the plurality of data lines one by one along the right side.

Another main purpose of this case is to provide a magnetoresistive sensing device for detecting a glass substrate, wherein the glass substrate has a plurality of data lines and a plurality of gate lines, and the glass substrate is powered by a signal source to enable The plurality of data lines and the plurality of gate lines are tested, and the magnetoresistive inductance The sensing device includes a first magnetoresistive sensor and a second magnetoresistive sensor, which are arranged in pairs with the first magnetoresistive sensor, and are used to sense the plurality of data lines one by one in pairs. The plurality of gate lines are used to obtain a first and a second sensing signal, respectively, and the difference between the first and the second sensing signal is used to determine each related data line or gate to be detected Whether the line is normal.

A main purpose of this case is to provide a magnetoresistive sensing device for detecting a substrate, wherein the substrate has a plurality of circuit lines, and the substrate is powered by a signal source, so that the plurality of circuit lines are detected, the magnetic The resistance sensing device includes two first magnetoresistive sensing units for sensing the first and second adjacent circuit lines of the plurality of circuit lines to generate a first and a second first signal component, respectively, and Two second magnetoresistive sensing units are arranged in pairs with the first magnetoresistive sensing unit for sensing the two adjacent circuit lines to respectively generate a first and a second signal component, wherein the first A first signal component and a first second signal component constitute a first sensing signal of the first adjacent circuit line, and the second first signal component and a second second signal component constitute the second adjacent circuit A second sensing signal of one of the lines, and the difference between the first and the second sensing signal is used to determine whether each of the detected related circuit lines is normal.

1: Testing equipment

11: Magnetoresistive sensing device

111: Level sensing unit

1111/1111a-1111d: The first magnetoresistive sensor

112: vertical sensing unit

1121/1121a-1121d: The second magnetoresistive sensor

1112/1122/TL071: signal amplifier

113: Post-device

12: beam

2: glass substrate

21: Gate line

22: data line

23: lower side/horizontal edge

24: Right/Vertical Edge

25: External power supply

26: slash

IN+/IN-: Input terminal

GND: Ground

OUTA: output terminal

RA/RB/RC/RD: equivalent resistance

OUT+: Positive voltage output terminal

OUT-: Negative voltage output terminal

V _OUT+ : Output positive voltage

V _OUT- : output negative voltage

VCC: supply voltage

The first figure: It is a schematic diagram showing the movement of the magnetoresistive sensing device of the inspection equipment according to the preferred embodiment of the present invention when inspecting the glass substrate.

Figure 2: It shows a preferred embodiment according to the concept of the present invention A schematic diagram of the configuration of the magnetoresistive sensor inside the magnetoresistive sensing device of the testing equipment.

The third figure: It shows a pair of magnetoresistive sensors substantially parallel to the data line of the magnetoresistive sensing device of the detection equipment according to the preferred embodiment of the present invention, placed on two adjacent data lines of the glass substrate Schematic diagram of the party.

The fourth figure: it shows a cross-sectional view of the pair of magnetoresistive sensors and the two adjacent data lines corresponding to the cross section of the aa' line segment in the third figure.

Figure 5: It shows a magnetoresistive sensing device of a testing device according to a preferred embodiment of the present invention. Two magnetoresistive sensors which are substantially parallel to the data line and the gate line are used for testing on the glass substrate. Schematic diagram of two adjacent diagonal lines.

Fig. 6: It is a schematic diagram showing a circuit of a magnetoresistive sensor of a magnetoresistive sensing device of a detection device according to a preferred embodiment of the present invention, which is electrically connected to a signal amplifier and a subsequent device.

The first figure is a schematic diagram showing the movement of the magnetoresistive sensing device of the inspection equipment according to the preferred embodiment of the present invention when inspecting a glass substrate. In the first figure, a testing device 1 includes a magnetoresistive sensing device 11 and a beam 12. The inspection device 1 is used to inspect a glass substrate 2. The glass substrate 2 includes a plurality of gate lines 21, a plurality of data lines 22, a horizontal edge 23, a vertical edge 24 and an external power source 25.

As shown in the first figure, when inspecting the glass substrate 2, the inspection device 1 will supply power to the data line 22 and the gate line 21 and move the magnetoresistive sensor. The device 11 detects whether each line is normal one by one. In the first figure, when the magnetoresistive sensing device 11 moves from position A to position B, the detecting device 1 provides power from the gate line 1 to the gate line N, and the magnetoresistive sensing device 11 detects the gate lines one by one Whether 1 to the gate line N is normal. As shown in the first figure, when the magnetoresistive sensing device 11 moves from position B to position C, the magnetoresistive sensing device 11 provides power from data line 1 to data line M, and the magnetoresistive sensing device 11 detects data one by one Whether line 1 to data line M is normal. In the first figure, the magnetoresistive sensing device 11 moves from position A to position B, and then from position B to position C, forming an L-shaped moving path and completing the plurality of data lines 22 and the plurality of gate lines 21 check.

The second figure is a schematic diagram showing the arrangement of the magnetoresistive sensors inside the magnetoresistive sensing device of the detection equipment according to the preferred embodiment of the present invention. In the second figure, the magnetoresistive sensing device 11 includes a horizontal sensing unit 111 and a vertical sensing unit 112. The magnetoresistive sensing device 11 has both a vertical magnetoresistive sensor (the second magnetoresistive sensor 1121a-1121d included in the vertical sensing unit 112) and a horizontal magnetic sensor (horizontal sensor). The first magnetoresistive sensors 1111a-1111d included in the unit 111 can simultaneously detect the changes in the magnetic field in both the vertical and horizontal directions, and can simultaneously meet the requirements for detecting data lines and gate lines on the glass substrate. As shown in the second figure, the magnetic group sensor in the same direction is a group of two, and the two magnetic group sensors in the same direction (for example, the first magnetoresistive sensor 1111a and 1111b or 1111c Whether the output difference with 1111d) (the difference between the sensing currents of two adjacent data lines or gate lines) is zero is used to determine whether one of the two adjacent data lines or gate lines is abnormal.

The third figure shows a pair of magnetoresistive sensors of the magnetoresistive sensing device of the detection equipment according to the preferred embodiment of the present invention, which are substantially parallel to the data lines, placed above two adjacent data lines on the glass substrate Schematic. In the third figure, the magnetic field around the first magnetoresistive sensors 1111a and 1111b changes at the same time, and the magnetoresistance of the first magnetoresistive sensors 1111a and 1111b is changed, which can be used for current detection. As shown in the third figure, the test object is a glass substrate (liquid crystal display used in thin film transistors: TFT-LCD) 2 and the first magnetoresistive sensors 1111a and 1111b are placed above the test object. Data line 1~Data line M and gate line 1~Gate line N (LCD resolution MxN, where X>=1 and X<=M, Y>=1 and Y< of data line X and data line Y =M) is the trace on the LCD used to conduct current to control the pixel display function on the LCD. As shown in the third figure, when detecting whether the electrical characteristics of the data line 1~data line M are consistent, the external power supply 25 provides a second voltage to the data line 1~data line M to generate current, and the current generates a magnetic field. Change the internal resistance of the first magnetoresistive sensors 1111a and 1111b. In the third figure, when the first magnetoresistive sensors 1111a and 1111b are respectively above the data line X or the data line Y, and the data line X or the data line Y has a circuit abnormality, the two first magnetoresistive sensors The output difference between the devices 1111a and 1111b is not zero; on the contrary, when the data line X or the data line Y has the same line, the output difference of the two first magnetoresistive sensors 1111a and 1111b is zero, so that the two adjacent gates can be judged Whether the electrical characteristics of the line, data line or diagonal line segment are consistent.

The fourth figure is a cross-sectional view of the pair of magnetoresistive sensors and the two adjacent data lines corresponding to the cross-section of the aa' line in the third figure. The first magnetoresistive sensors 1111a and 1111b are on the data line X or the data line Y respectively. Set the position above the distance d (distance d).

The fifth figure shows the two magnetoresistive sensors of the magnetoresistive sensing device of the detection equipment according to the preferred embodiment of the present invention, which are respectively substantially parallel to the data line and the gate line, for detecting two phases on the glass substrate. Schematic diagram of adjacent diagonal line segments. As shown in the fifth figure, for the current sensing of the diagonal line segment 26 (non-horizontal or vertical line segment) on the glass substrate 2 with a horizontal edge 23 and a vertical edge 24, the sensing device 11 also has a vertical magnetoresistance The sensor (the second magnetoresistive sensor 1121 included in the vertical sensing unit 112 (see the second figure)) and the horizontal magnetic sensor (the horizontal sensing unit 111 (see the second figure)) The first magnetoresistive sensor 1111) can simultaneously detect the magnetic field components in the vertical and horizontal directions, and then add the two components to calculate the actual current value.

FIG. 6 is a schematic diagram showing a circuit of a magnetoresistive sensor of a magnetoresistive sensing device of a detection device according to a preferred embodiment of the present invention, which is electrically connected to a signal amplifier and a subsequent device. As shown in Figure 6, the first or second magnetoresistive sensor 1111/1121 receives the 5V voltage supplied by the external power supply, RA/RB/RC/RD is the first or second magnetoresistive sensor 1111/1121 When the first or second magnetoresistive sensor 1111/1121 receives the magnetic field, the magnitude of RA/RB/RC/RD will change, and the two output terminals OUT+/OUT- represent one of the two induced currents. The difference between the two output voltages will change. After the TL071 signal amplifier 1112/1122, it has two input terminals IN+ and IN- and an output terminal OUTA, and the output terminal OUTA outputs an amplified voltage signal V _OUTA to the downstream device 113 for interpretation Voltage signal.

As shown in the first figure, this case provides a method for detecting a A detection device for a glass substrate 2 with a plurality of data lines 22, a plurality of gate lines 21, a horizontal edge 23, and a vertical edge 24 includes a magnetoresistive sensing device 11, which includes a The horizontal sensing unit 111 has at least two first magnetoresistive sensors 1111, and a vertical sensing unit 112 has at least two second magnetoresistive sensors 1121. When the horizontal edge 23 moves perpendicular to the plurality of gate lines 21, and when an external power supply 25 provides a first voltage to the plurality of gate lines 21, the at least two second magnetoresistive sensors 1121 are respectively It is used to sense the two sensing currents of two adjacent gate lines 21 in order to obtain a first difference between the two. When the first difference is not zero, the two adjacent gate lines 21 One of them has a first line abnormality, and when the magnetoresistive sensing device moves along the vertical edge 24 and perpendicular to the plurality of data lines 22, and a second voltage is provided from the external power supply 25 to the plurality of data Line 22, the at least two first magnetoresistive sensors 1111 are respectively used to sequentially sense two sensing currents of two adjacent data lines 22 to obtain a second difference between the two, when the first When the difference between the two is not zero, one of the two adjacent data lines has an abnormal second line.

As shown in the first and sixth figures, the detection device 1 further includes a movable beam 12, wherein the magnetoresistive sensing device 11 is arranged on the beam 12, and the movement of the beam 12 is used to detect the The glass substrate 2 has a grounded lower side of each of the gate lines 21 and a right side of each of the data lines 22 grounded, the horizontal edge 23 is the lower side, and the vertical edge 24 is the right side, each The first magnetoresistive sensor 1111 and each of the second magnetoresistive sensors 1121 are selected from a giant magnetoresistive sensor, an anisotropic magnetoresistive sensor and a One of the group of tunneling magnetoresistive sensors, the at least two first magnetoresistive sensors 1111 are a pair or a plurality of pairs of first magnetoresistive sensors 1111 parallel to each other, so that each pair The first magnetoresistive sensor 1111 is substantially parallel to each of the data lines 22 to detect a horizontal magnetic field change. The at least two second magnetoresistive sensors 1121 are a pair or a plurality of pairs of parallel second magnets. The resistance sensor 1121 makes each pair of second magnetoresistive sensors 1121 substantially parallel to each gate line 21 to detect a vertical magnetic field change. When each gate line 21 or each data line 22 When a current is generated due to energization, a magnetic field around each of the first magnetoresistive sensors 1111 or each of the second magnetoresistive sensors 1121 adjacent to each of the gate lines 21 or each of the data lines 22 will be generated Change, thus changing the size of a magnetoresistance inside each of the first magnetoresistive sensors 1111 or each of the second magnetoresistive sensors 1121, so that each of the first magnetoresistive sensors 1111 or each of the second magnetoresistive sensors 1111 One of the induced currents generated by the resistance sensor 1121 also changes accordingly.

As shown in the first figure and the second figure, the detection device 1 in which the horizontal sensing unit 111 is used to detect a magnetic field change in a direction parallel to the horizontal edge 23 of the glass substrate 2, the vertical sensing unit 112 is used to detect the change of the magnetic field in a direction parallel to the vertical edge 24 of one of the glass substrates, according to whether the difference between the vertical sensing unit 112 on one or two vertical sensing currents on two adjacent gate lines 21 is zero Then it can be judged whether the two adjacent gate lines 21 have the first line abnormality, and it can be judged according to whether the difference between one or two level sensing currents on the two adjacent data lines 22 by the level sensing unit 111 is zero. Whether the two adjacent data lines 22 have the second line abnormality, so that the multiple gate lines 21 and the complex on the glass substrate 2 can be satisfied at the same time. A detection requirement for whether a plurality of data lines 22 are abnormal, each of the pair of second magnetoresistive sensors 1121a-1121b/1121c-1121d is arranged on the left and right sides of a longitudinal center axis of the magnetoresistive sensing device 11 (1121a And 1121c are on the left, and 11121b and 1121d are on the right), and the plurality of pairs of second magnetoresistive sensors (the first pair of 1121a and 1121b and the second pair of 1121c and 1121d) are in sequence along the longitudinal center axis upward or downward. Distributed at the center of the magnetoresistive sensing device, the level sensing unit is arranged on the left and/or right side of the magnetoresistive sensing device, when a first pair of first magnetoresistive sensors (1111a and 1111b) When set on the left side of the magnetoresistive sensing device, a second pair of first magnetoresistive sensors (1111c and 1111d) are set on the right side of the magnetoresistive sensing device 11, and each pair of first magnetoresistive sensors The devices (1111a and 1111b and 1111c and 1111d) are arranged on an upper side and a lower side in a longitudinal direction parallel to the longitudinal center axis, to a third pair and a fourth pair of first magnetoresistive sensing And the remaining pairs of first magnetoresistive sensors (not shown) are arranged in the order from left to right, and extend upward or downward along the longitudinal direction. The pair of first magnetoresistive sensors ( For example: when there are only 1111a and 1111b) used to generate a first value of the difference between the two levels of sensing current, the plurality of pairs of first magnetoresistive sensors (for example: when there are two pairs: 1111a and 1111b and 1111c And 1111d) are used to generate a plurality of (for example, 2) first values of the difference between the two levels of sensing currents, and the plurality of first values are used for comparison with each other to improve the accuracy of the level sensing unit 111 Degree, the pair of second magnetoresistive sensors (for example, when there are only 1121a and 1121b) are used to generate a second value of the difference between the two perpendicular sensing currents, and the plurality of pairs of second magnetoresistive sensors (For example: when there are two pairs: 1121a and 1121b and 1121c and 1121d) to generate A plurality of (for example, two) second values of the difference between the two vertical sensing currents are used for comparison with each other to improve the accuracy of the vertical sensing unit 112.

As shown in the first and fifth figures of the inspection device 1, the glass substrate 2 further includes at least two oblique line segments 26, each of the oblique line segments 26 is not substantially horizontal to the horizontal edge 23 and not substantially perpendicular to the The line segment of the vertical edge 24, when the magnetoresistive sensing device 11 moves in a direction perpendicular to the at least two oblique line segments 26, to detect one of the two sensing currents of two adjacent oblique line segments 26 of the at least two oblique line segments 26 In the case of a third difference, the at least two second magnetoresistive sensors 1121 are respectively used to sequentially sense a vertical component of the third difference, and the at least two first magnetoresistive sensors 1111 respectively Used to sense a horizontal component of the third difference in sequence, add the vertical component and the horizontal component to obtain the third difference, and when the third difference is not zero, the two adjacent diagonal line segments One of 26 has an abnormal third line.

As shown in the first and fourth figures of the testing equipment 1, wherein the magnetoresistive sensing device 11 is arranged above the glass substrate 2 with a distance d between the two, the magnetoresistive sensing device 11 is first along Move along the horizontal edge 23, and then move along the vertical edge 24, or move along the vertical edge 24 first, and then move along the horizontal edge 23 to detect the plurality of gate lines 21 and the plurality of data lines 22. When detecting the at least two oblique line segments 26, move in a direction perpendicular to the at least two oblique line segments 26, and the first to third line abnormalities are each a short circuit, a jumper or an open circuit.

As shown in the first and sixth figures, the detection device 1 in which the magnetoresistive sensing device 11 further includes a subsequent device 113, and the horizontal sensing unit 111 and the vertical sensing unit 112 each further include at least two Signal amplifiers 1112/1122, each of the signal amplifiers 1112/1122 includes two input terminals IN+/IN- and an output terminal OUTA, each of the first magnetoresistive sensor 1111 and each of the second magnetoresistive sensors 1121 each includes A positive voltage output terminal OUT+ and a negative voltage output terminal OUT- are respectively electrically connected to the corresponding two input terminals IN+/IN-, each of the signal amplifiers 1112/1122 is used to output an amplified voltage signal from the output terminal OUTA V _{OUTA is} given to the downstream device 113 to interpret a voltage signal representing one of the first difference, the second difference or the third difference, where GND is a ground, V _OUT+ is an output positive voltage, and V _{OUT -Is} an output negative voltage, and VCC is a power supply voltage.

As shown in the first and sixth figures, the present application provides a detection device 1 for detecting a glass substrate 2 having a plurality of data lines 22 and a plurality of gate lines 21, including a magnetoresistive sensing device 11, The magnetoresistive sensing device 11 includes a horizontal sensing unit 111 having at least two first magnetoresistive sensors 1111, and a vertical sensing unit 112 having at least two second magnetoresistive sensors 1121, wherein When the magnetoresistive sensing device 11 moves in a direction perpendicular to the gate lines 21, and the gate lines 21 receive a first voltage, the at least two second magnetoresistive sensors 1121 It is used to sense the first difference of one of the two induced currents on two adjacent gate lines 21, when the first difference is not zero, one of the two adjacent gate lines 21 has a line abnormality, and When the magnetoresistive sensing device 11 moves in a direction perpendicular to the plurality of data lines 22, and the plurality of data lines 22 receive a second voltage, the at least two first magnetoresistive sensors 1111 are used for Sense the second difference of one of the two induced currents on two adjacent data lines 22, when the second difference is not zero, One of the two adjacent data lines is abnormal.

As shown in the first and sixth figures, the present application provides a method for detecting a glass substrate 2 with a plurality of data lines 22 and a plurality of gate lines 21 using a detection device 1 with a magnetoresistive sensing device 11 , Wherein the magnetoresistive sensing device 11 includes a horizontal sensing unit 111 with at least two first magnetoresistive sensors 1111 and a vertical sensing unit 112 with at least two second magnetoresistive sensors 1121, The method includes: when the magnetoresistive sensing device 11 moves in a direction perpendicular to the plurality of gate lines 21, and an external power supply 25 provides a first voltage to the plurality of gate lines 21, the At least two second magnetoresistive sensors 1121 respectively sense the two induced currents of two adjacent gate lines 21 in sequence to obtain a first difference between the two, wherein when the first difference is not zero , One of the two adjacent gate lines 21 has a first line abnormality; and when the magnetoresistive sensing device 11 moves in a direction perpendicular to the plurality of data lines 22, and the external power supply 25 provides a When the second voltage is applied to the plurality of data lines 22, the at least two first magnetoresistive sensors 1111 respectively sense the two induced currents of two adjacent data lines 22 in order to obtain one of the second difference When the second difference is not zero, one of the two adjacent data lines 22 has a second line abnormality.

As shown in the method shown in the first figure, the glass substrate 2 further includes a horizontal edge 23 and a vertical edge 24, when the magnetoresistive sensing device 11 moves in the direction perpendicular to the plurality of gate lines 21 The step further includes: moving the magnetoresistive sensing device 11 along the horizontal edge 23 and perpendicular to the plurality of gate lines 21 to detect whether the plurality of gate lines 21 have the first line abnormality, and when The magnetoresistive sensing device 11 is perpendicular to the complex The step of moving the plurality of data lines 22 further includes: moving the magnetoresistive sensing device 11 along the vertical edge 24 and perpendicular to the plurality of data lines 22 to detect whether the plurality of data lines 22 have the The second line is abnormal.

As shown in the method shown in the first, fifth and sixth figures, the glass substrate 2 further includes at least two oblique line segments 26, each of the oblique line segments 26 is an insubstantially horizontal to the horizontal edge 23 and insubstantially vertical On the line segment of the vertical edge 24, the method further includes: moving the magnetoresistive sensing device 11 in a direction perpendicular to the at least two oblique line segments 26 to detect two adjacent oblique line segments 26 of the at least two oblique line segments 26 The third difference between one of the two sensing currents of the two sensing currents; the at least two second magnetoresistive sensors 1121 are respectively used to sequentially sense a vertical component of the third difference: making the at least two first The magnetoresistive sensors 1111 are respectively used for sequentially sensing a horizontal component of the third difference; and summing the vertical component and the horizontal component to obtain the third difference, wherein when the third difference is not At zero hour, one of the two adjacent oblique line segments 26 has a third line abnormality.

As shown in the first figure, this application provides a method for detecting a glass substrate 2 with a plurality of data lines 22 and a plurality of gate lines 21 using a magnetoresistive sensing device 11, wherein when the glass substrate 2 is placed In a detection plane 2, the glass substrate 2 has an upper side, a left side, a lower side 23, and a right side 24, and the detection plane 2 has a signal source 25 to supply power to the plurality of data lines 22 and the plurality of gate lines 21. Let it be detected, and the signal source 25 is placed on the left side 24, the lower side 23 is the ground side of each gate line 21, and the right side 24 is the ground side of each data line, the method Including: making the magnetoresistive sensing device 11 above the glass substrate 2; making the magnetoresistive sensing device The device 11 senses the plurality of gate lines 21 one by one along the lower side 23; and makes the magnetoresistive sensing device 11 sense the plurality of data lines 22 one by one along the right side 24.

As shown in the first and second figures, the present application provides a magnetoresistive sensing device 11 for detecting a glass substrate 2, wherein the glass substrate 2 has a plurality of data lines 22 and a plurality of gate lines 21, and the The glass substrate 2 is powered by a signal source 25 to enable the plurality of data lines 22 and the plurality of gate lines 21 to be detected. The magnetoresistive sensing device 11 includes: a first magnetoresistive sensor 1111a/1121a; And a second magnetoresistive sensor 1111b/1121b, which is arranged in a pair with the first magnetoresistive sensor 1111a/1121a, and is used to sense the plurality of data lines 22 or the plurality of gates one by one together in pairs Polar line 21 to obtain a first and a second sensing signal respectively; and use the difference between the first and the second sensing signal to determine each of the detected related data lines 22 or gate lines 21 Is it normal?

As shown in the first and second figures, the pair of magnetoresistive sensors 1111a-1111b/1121a-1121b are used to sense one of the plurality of data lines 22 and the plurality of gate lines 21, and The magnetoresistive sensing device 11 further includes another pair of magnetoresistive sensors 1121a-1121b/1111a-1111b for sensing the other of the plurality of data lines 22 and the plurality of gate lines 21.

As shown in the second and fifth figures, this application provides a magnetoresistive sensing device 11 for detecting a substrate 2, wherein the substrate 2 has a plurality of circuit lines 26, and the substrate is powered by a signal source 25, To detect the plurality of circuit lines 26, the magnetoresistive sensing device 11 includes: two first magnetoresistive sensors 1111a-1111b/1111c-1111d for sensing the first and second of the plurality of circuit lines 26 Two adjacent circuit lines 26 generate a first and a second The first signal component; and two second magnetoresistive sensors 1121a-1121b/1121c-1121d, which are arranged in pairs with the first magnetoresistive sensors 1111a-1111b/1111c-1111d to sense the adjacent two The circuit line 26 generates a first and a second second signal component, respectively, wherein: the first first signal component and the first second signal component constitute a first sensing of the first adjacent circuit line 26 Signal, and the second first signal component and the second second signal component constitute a second sensing signal of the second adjacent circuit line 26; and the difference between the first and the second sensing signal , To determine whether each of the detected related circuit lines 26 is normal.

In summary, the present invention provides a detection device and method for detecting a glass substrate with a plurality of data lines, a plurality of gate lines, a horizontal edge and a vertical edge. The detection device includes a detection device having at least Two horizontal sensing units of first magnetoresistive sensors, and a vertical sensing unit having at least two second magnetoresistive sensors, wherein the at least two second magnetoresistive sensors are used to sense two A first difference value of one of the two induced currents on adjacent gate lines. When the first difference value is not zero, one of the two adjacent gate lines has an abnormality, and the at least two first magnetic resistances The sensor is used to sense a second difference value of one of the two induced currents on two adjacent data lines. When the second difference value is not zero, one of the two adjacent data lines has a line abnormality to improve the The detection rate of open circuit, each short circuit and/or each bridge is indeed novel and progressive.

Therefore, even though this case has been described in detail by the above-mentioned embodiments and can be modified in many ways by those familiar with the art, it does not deviate from the protection of the scope of the attached patent application.

1‧‧‧Testing equipment

11‧‧‧Magnetic resistance sensing device

12‧‧‧Beam

2‧‧‧Glass substrate

21‧‧‧Gate line

22‧‧‧Data cable

23‧‧‧Horizontal edge

24‧‧‧Vertical edge

25‧‧‧External power supply

Claims (11)

A detection device for detecting a glass substrate with a plurality of data lines, a plurality of gate lines, a horizontal edge and a vertical edge, comprising a magnetoresistive sensing device, the magnetoresistive sensing device comprising: a horizontal The sensing unit has at least two first magnetoresistive sensors; and a vertical sensing unit has at least two second magnetoresistive sensors, wherein when the magnetoresistive sensing device is along the horizontal edge and perpendicular to When the plurality of gate lines move, and a first voltage is provided to the plurality of gate lines from an external power source, the at least two second magnetoresistive sensors are respectively used to sequentially sense two adjacent gate lines A first difference between one of the two sensing currents of the wire, when the first difference is not zero, one of the two adjacent gate lines has a first line abnormality, and when the magnetoresistive sensing device When moving along the vertical edge and perpendicular to the plurality of data lines, and when a second voltage is provided to the plurality of data lines from the external power supply, the at least two first magnetoresistive sensors are respectively used for sequential sensing A second difference value of one of the two sensing currents of two adjacent data lines. When the second difference value is not zero, one of the two adjacent data lines has a second line abnormality. As described in the first item of the scope of patent application, the inspection equipment further includes a movable beam, wherein the magnetoresistive sensing device is arranged on the beam, and the glass substrate is detected by the movement of the beam, and the glass substrate has A lower side of each of the gate lines grounded and a right side of each of the data lines grounded, the horizontal edge Is the lower side, and the vertical edge is the right side, each of the first magnetoresistive sensor and each of the second magnetoresistive sensors is selected from a giant magnetoresistive sensor, an anisotropic magnetoresistive sensor And a tunneling magnetoresistive sensor. The at least two first magnetoresistive sensors are a pair or a plurality of pairs of first magnetoresistive sensors parallel to each other, so that each of the The first magnetoresistive sensor is substantially parallel to each of the data lines to detect a horizontal direction magnetic field change, and the at least two second magnetoresistive sensors are a pair or a plurality of pairs of second magnetoresistive sensors parallel to each other The sensor makes each pair of second magnetoresistive sensors substantially parallel to each gate line to detect a vertical magnetic field change. When each gate line or each data line generates current due to energization, Will cause the magnitude of a magnetic field around each of the first magnetoresistive sensors or each of the second magnetoresistive sensors adjacent to each of the gate lines or each of the data lines to change, thereby changing each of the first magnetoresistive sensors The size of a magnetoresistance inside the sensor or each of the second magnetoresistive sensors, so that an induced current generated by each of the first magnetoresistive sensors or each of the second magnetoresistive sensors also changes accordingly . As for the inspection device described in claim 2, wherein the horizontal sensing unit is used to detect a magnetic field change in a direction parallel to the horizontal edge of the glass substrate, and the vertical sensing unit is used to detect the glass The change of the magnetic field in the direction parallel to the vertical edge of one of the substrates can determine whether the two adjacent gate lines are different according to whether the difference between the two vertical sensing currents of the two adjacent gate lines is zero. The first line is abnormal, and according to the level sensing unit, one or two levels of the adjacent data lines are sensed. Whether the difference between the currents is zero or not can be used to determine whether the two adjacent data lines have the second line abnormality, so that the detection requirements of whether the plurality of gate lines and the plurality of data lines on the glass substrate are abnormal can be met at the same time. Each of the pair of second magnetoresistive sensors is arranged on the left and right of a longitudinal center axis of the magnetoresistive sensing device, and the plurality of pairs of second magnetoresistive sensors are sequentially upward or downward along the longitudinal center axis. Distributed downwards at the central position of the magnetoresistive sensing device, the horizontal sensing unit is arranged on the left and/or right side of the magnetoresistive sensing device, when a first pair of first magnetoresistive sensors is arranged on the magnetic When the resistance sensing device is on the left side, a second pair of first magnetoresistive sensors are arranged on the right side of the magnetoresistive sensing device, and each pair of first magnetoresistive sensors is arranged parallel to the longitudinal center axis. One of the upper and lower sides of a longitudinal direction is provided, to a third pair and a fourth pair of first magnetoresistive sensors, and the remaining pairs of first magnetoresistive sensors are arranged on the left side and then The pair of first magnetoresistive sensors is used to generate a first value of the difference between the two horizontal sensing currents, and the plurality of pairs of first magnetoresistive sensors are arranged in sequence on the right side and extend upward or downward along the longitudinal direction. The detector is used to generate a plurality of first values of the difference between the two level sensing currents, and the plurality of first values are used for comparison with each other to improve the accuracy of the level sensing unit, the pair of second magnetoresistance The sensor is used to generate a second value of the difference between the two vertical sensing currents, and the plurality of second magnetoresistive sensors are used to generate a plurality of second values of the difference between the two vertical sensing currents, and the plurality of second values are The two values are used for comparison with each other to improve the accuracy of the vertical sensing unit. As for the inspection device described in claim 1, wherein the glass substrate further includes at least two oblique line segments, and each oblique line segment is a line segment that is not substantially horizontal to the horizontal edge and not substantially perpendicular to the vertical edge, when the When the magnetoresistive sensing device moves in a direction perpendicular to the at least two oblique line segments to detect a third difference between two sensing currents of two adjacent oblique line segments of the at least two oblique line segments, the at least two second oblique line segments Two magnetoresistive sensors are respectively used for sequentially sensing a vertical component of the third difference, and the at least two first magnetoresistive sensors are respectively used for sequentially sensing a level of the third difference Component, sum the vertical component and the horizontal component to obtain the third difference value. When the third difference value is not zero, one of the two adjacent oblique line segments has a third line abnormality. According to the inspection device described in item 4 of the scope of patent application, wherein the magnetoresistive sensing device is arranged above the glass substrate with a gap between the two, the magnetoresistive sensing device first moves along the horizontal edge, and then Move along the vertical edge, or move along the vertical edge first, and then move along the horizontal edge to detect the plurality of gate lines and the plurality of data lines. When the at least two diagonal line segments are detected, then move along the Moving in a direction perpendicular to the at least two oblique line segments, the first to third line abnormalities are each a short circuit, a jumper or an open circuit. According to the inspection device described in claim 4, the magnetoresistive sensing device further includes a subsequent device, the horizontal sensing unit and the vertical sensing unit each further include at least two signal amplifiers, each of the signal amplifiers Includes two input terminals and an output terminal, each of the first magnetoresistive sensor and each of the second magnetoresistive sensors The sensors each include a positive voltage output terminal and a negative voltage output terminal, which are respectively electrically connected to the corresponding two input terminals. Each of the signal amplifiers is used to output an amplified voltage signal to the subsequent device to determine the representative One of the first difference, the second difference, or the third difference is a voltage signal. A detecting device for detecting a glass substrate with a plurality of data lines and a plurality of gate lines includes a magnetoresistive sensing device. The magnetoresistive sensing device includes: a level sensing unit with at least two A first magnetoresistive sensor; and a vertical sensing unit having at least two second magnetoresistive sensors, wherein when the magnetoresistive sensing device moves in a direction perpendicular to the plurality of gate lines, and When the plurality of gate lines receive a first voltage, the at least two second magnetoresistive sensors are used to sense a first difference between two induced currents on two adjacent gate lines. When the first difference is not When it is zero, one of the two adjacent gate lines has a line abnormality, and when the magnetoresistive sensing device moves in a direction perpendicular to the plurality of data lines, and the plurality of data lines receive a second When the voltage is applied, the at least two first magnetoresistive sensors are used to sense a second difference of one of the two induced currents on two adjacent data lines. When the second difference is not zero, the two adjacent data lines One of them has an abnormal line. A method for detecting a glass substrate with a plurality of data lines and a plurality of gate lines using a detection device with a magnetoresistive sensing device, wherein the magnetoresistive sensing device includes a first magnetoresistor with at least two Sensor The horizontal sensing unit and a vertical sensing unit having at least two second magnetoresistive sensors, the method includes: when the magnetoresistive sensing device moves in a direction perpendicular to the plurality of gate lines, and When an external power supply provides a first voltage to the plurality of gate lines, the at least two second magnetoresistive sensors respectively sense one of the two induced currents of two adjacent gate lines in sequence. Difference, wherein when the first difference is not zero, one of the two adjacent gate lines has a first line abnormality; and when the magnetoresistive sensing device is perpendicular to the plurality of data lines When moving in the direction and a second voltage is provided by the external power supply to the plurality of data lines, the at least two first magnetoresistive sensors respectively sense one of the two induced currents of two adjacent data lines in sequence The second difference, wherein when the second difference is not zero, one of the two adjacent data lines has a second line abnormality. The method described in item 8 of the scope of patent application, wherein the glass substrate further includes a horizontal edge and a vertical edge, the glass substrate has a lower side of each gate line grounding and a right side of each data line grounding, The horizontal edge is the lower side and the vertical edge is the right side. When the magnetoresistive sensing device moves in the direction perpendicular to the plurality of gate lines, the step further includes: moving the magnetoresistive sensing device along The horizontal edge moves perpendicularly to the plurality of gate lines to detect whether the plurality of gate lines has the first line abnormality, and when the magnetoresistive sensing device is in the direction perpendicular to the plurality of data lines The moving step further includes: making the magnetoresistive sensing device along the vertical side The edge is moved perpendicular to the plurality of data lines to detect whether the plurality of data lines has the second line abnormality. According to the method described in claim 8, wherein the glass substrate further includes at least two oblique line segments, each of the oblique line segments is a line segment that is not substantially horizontal to the horizontal edge and not substantially perpendicular to the vertical edge, the method is more The method includes: moving the magnetoresistive sensing device in a direction perpendicular to the at least two oblique line segments to detect a third difference between two sensing currents of two adjacent oblique line segments of the at least two oblique line segments; At least two second magnetoresistive sensors are respectively used for sequentially sensing a vertical component of the third difference: the at least two first magnetoresistive sensors are respectively used for sequentially sensing the third difference And sum the vertical component and the horizontal component to obtain the third difference value, wherein when the third difference value is not zero, one of the two adjacent diagonal line segments has a third line abnormal. A magnetoresistive sensing device for detecting a substrate, wherein the substrate has a plurality of circuit lines, and the substrate is powered by a signal source to enable the plurality of circuit lines to be detected. The magnetoresistive sensing device includes: a second A magnetoresistive sensing unit for sensing the first and second adjacent circuit lines of the plurality of circuit lines to generate a first and a second first signal component, respectively; and Two second magnetoresistive sensing units are arranged in pairs with the first magnetoresistive sensing unit for sensing the two adjacent circuit lines to respectively generate a first and a second signal component, wherein: the The first first signal component and the first second signal component constitute a first sensing signal of the first adjacent circuit line, and the second first signal component and the second second signal component constitute the second adjacent circuit line A second sensing signal of the circuit line; and the difference between the first and the second sensing signal is used to determine whether each of the detected related circuit lines is normal.

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