TWI788520B - Manufacturing method of semiconductor device, manufacturing device of semiconductor device, and semiconductor device - Google Patents

Abstract

[Problem] To provide an improved semiconductor device manufacturing method for forming protruding electrodes, a semiconductor device manufacturing device, and a semiconductor device. [Solution] It is equipped with: a coating agent forming step of forming a coating agent that covers the surface of a plurality of electrode terminals provided on a semiconductor element; a coating agent opening step of sandwiching a coating agent between a mold at the opening, that is, a nanoimprint mold To press against a plurality of electrode terminals, thereby forming openings in the coating agent; coating agent hardening step, giving energy to the coating agent through the nanoimprint mold to harden the coating agent; developing step, making the openings react with the developer and expanding in the radial direction; a metal filling step of filling the opening with a metal that will become a bump; and a peeling step of peeling the coating agent from the surfaces of the plurality of electrode terminals.

Description

Manufacturing method of semiconductor device, manufacturing device of semiconductor device, and semiconductor device

field of invention The disclosure relates to a manufacturing method of a semiconductor device, a manufacturing device of a semiconductor device, and a semiconductor device.

Background of the invention In recent years, in order to promote both higher density of semiconductor elements and multi-pin electrode terminals, the pitch between electrode terminals of semiconductor elements and the area reduction of electrode terminals have been sought. Flip-chip assembly is known as one of assembly techniques of a semiconductor element, in which the pitch between electrode terminals has been narrowed and the area of the electrode terminals has been reduced, on an assembly substrate.

In flip chip assembly, protruding electrodes are formed on the electrode terminals of semiconductor elements such as system LSI, memory, CPU, etc., and are bonded and heated to the connection terminals of the assembly substrate. In this way, the electrode terminals are bump-connected on the connection terminals, so that the semiconductor element is flip-chip assembled on the assembly substrate.

The protruding electrodes formed on the electrode terminals are often solder bumps. In terms of the method of forming the solder bumps on the electrode terminals in a protruding shape, there is known a method of forming solder on the electrode terminals by, for example, screen printing, dispensing, or electrolytic plating, and then reflowing A method in which the furnace is heated to above the melting point of the solder. However, with the narrowing of the pitch between electrode terminals, the melted and deformed solder bumps are likely to be connected to other solder bumps due to their surface tension during the bonding and heating steps during flip-chip assembly. Bad bridging. Therefore, the stricter the requirement for narrowing the pitch between electrode terminals, the more difficult it becomes to use solder bumps as protruding electrodes.

Therefore, there is known a method of using, for example, tapered fine metal bumps made of gold or copper instead of solder bumps as protruding electrodes formed on electrode terminals. In this method, the front ends of the protruding electrodes are plastically deformed in the bonding and heating steps during flip-chip assembly, and the protruding electrodes are bonded to the connection terminals by solid phase diffusion. According to this method, since the tapered fine metal bumps are not melted during the bonding and heating steps during flip-chip assembly, it is possible to prevent bridging defects caused by melting and deformation of the fine metal bumps. Therefore, it becomes easy to cope with narrowing the pitch between electrode terminals. Various methods have been proposed as methods for forming tapered fine metal bumps (see Patent Documents 1 and 2). prior art literature patent documents

Patent Document 1: Japanese Patent No. 4826924 Patent Document 2: Japanese Patent Application Laid-Open No. 4-217324

Summary of the invention The problem to be solved by the invention An aspect of the present disclosure helps to provide an improved semiconductor device manufacturing method for forming protruding electrodes, a semiconductor device manufacturing device, and a semiconductor device. means to solve problems

A semiconductor device manufacturing method according to an aspect of the present disclosure adopts the following configuration: a coating agent forming step of forming a coating agent that covers the surface of a plurality of electrode terminals provided on a semiconductor element; a coating agent opening step of opening the opening The mold of the part, that is, the nanoimprint mold sandwiches the coating agent to press against the plurality of electrode terminals, thereby forming the openings in the coating agent; the coating agent hardening step, via the nanoimprint mold giving energy to the coating agent to harden the coating agent; a developing step of expanding the opening in the radial direction by reacting with a developer; a metal filling step of filling the opening with metal that will become a bump; and a peeling step, The coating agent is peeled off from the surfaces of the plurality of electrode terminals.

A semiconductor device manufacturing apparatus according to an aspect of the present disclosure is configured as follows: a pressurizing unit that presses a nanoimprint mold, which is a mold for forming an opening in a coating agent, against the plurality of molds with the coating agent interposed therebetween. The electrode terminal, the coating agent is to cover the surface of a plurality of electrode terminals provided on the semiconductor element; the coating agent hardening unit is to give energy to the coating agent through the nano imprint mold to harden the coating agent; the developing unit, The inner wall of the opening reacts with a developer to expand in the radial direction; and the metal filling unit fills the opening with a metal that will become a bump.

A semiconductor device according to an aspect of the present disclosure is configured as follows: a semiconductor element having a plurality of electrode terminals; a seed layer covering the plurality of electrode terminals; and a bump formed on the seed layer, and, The aforementioned protrusion has an inclined surface. Invention effect

According to the present disclosure, it is possible to provide an improved semiconductor device manufacturing method for forming protruding electrodes, a semiconductor device manufacturing device, and a semiconductor device.

Further advantages and effects of an aspect of the present disclosure will be clearly understood from the specification and drawings. Although such advantages and/or effects are provided separately by some embodiments and the features described in the specification and drawings, it is not necessary to provide all of them in order to obtain one or more of the same features.

form for carrying out the invention [The process of arriving at this reveal] As a method of forming tapered fine metal bumps, for example, there is known a vapor deposition method in which fine metal particles are deposited by injecting fine particles and a carrier gas (see Patent Document 1).

According to Patent Document 1, it is considered that it is possible to provide a fine metal bump forming method capable of stably and industrially forming fine metal bumps on a predetermined portion of a metal member formed on one side of a substrate. However, in order to form conical metal bumps by the forming method described in Patent Document 1, it is required to individually spray metal fine particles and carrier gas from the nozzle to the electrode portion for each bump. Therefore, when forming a large number of bumps on a multi-pin and large-diameter wafer, it is required to scan the entire surface of the wafer and spray metal particles and carrier gas over the entire surface of the wafer, which may lead to a longer production time. question. In addition, in the formation method described in Patent Document 1, the deposited metal film is peeled off simultaneously with the mask layer. Therefore, it is required to discard or recover expensive metals such as gold and platinum contained in the peeled metal film, and there is also a problem of increased production costs.

In terms of other bump forming methods, for example, it is proposed to overexpose a negative resist to form an inverted cone-shaped resist pattern, and use the resist pattern as a mask to form a resist pattern by electrolytic plating. A method of forming bumps by coating (refer to Patent Document 2).

FIG. 5 is a cross-sectional view conceptually showing a conventional bump forming method.

First, as shown in FIG. 5( a ), after forming an insulating film 102 , an aluminum pad 103 , and a protective film 104 on a silicon substrate 101 , a barrier metal 105 is formed. Next, a negative-type coating agent 107 is applied. Then, exposure is performed by pressing the exposure mask against the coating agent 107 . The portion of the negative-type coating agent 107 irradiated by light does not dissolve in the developer, and the portion not irradiated by light dissolves in the developer. Here, if the exposure time is set longer than usual, that is, overexposure, the cross-sectional shape of the coating agent 107 after development becomes an inverted cone shape as shown in FIG. 5( b ). Next, the coating agent 107 is used as a mask, and electrolytic plating is performed with an electrolytic plating solution, whereby the shape of the bump 106 becomes a forward taper shape as shown in FIG. 5( c ). Afterwards, as shown in FIG. 5( d ), the coating agent 107 is removed, and a coating agent 108 patterned by photolithography is formed for etching of the barrier metal 105 . Then, as shown in FIG. 5( e ), the barrier metal 105 is selectively etched, and the coating agent 108 is removed.

However, the cross-sectional shape of the coating agent 107 is determined by the degree of dissolution of the part of the coating agent 107 that is not irradiated by light in the developer solution. Therefore, if minute openings are to be formed in the coating agent 107, the speed at which the developer solution flows into the holes will be uneven in the substrate. As a result, the shape of the opening of the coating agent is not uniform, and there are problems that bumps that are not opened to the bottom are formed in the substrate. This problem becomes more prominent when the pitch of electrode terminals of semiconductor elements is narrowed or the diameter of substrates is increased for high productivity.

This disclosure has been arrived at in consideration of the above problems. In view of the above-mentioned problems, the present disclosure provides a method of manufacturing a semiconductor device. The aforementioned manufacturing method can form a semiconductor device with a short production time and a stable shape of tiny protruding electrodes. Hereinafter, embodiments of the present disclosure will be described with reference to the drawings.

[Embodiment 1] Fig. 1 is a cross-sectional view illustrating a method of manufacturing a semiconductor device according to Embodiment 1.

＜Bump forming method＞ First, a description will be given of the coating agent forming step shown in FIG. 1( a ). A plurality of electrode terminals 2 are formed on the semiconductor element 1 . The semiconductor element 1 is, for example, a circular silicon wafer. The outer diameter of the silicon wafer is, for example, 300 mm in diameter.

In the coating agent forming step, the seed layer 7 is formed so as to cover the entire surface on which the electrode terminals 2 are formed. The seed layer 7 is a thin conductive layer formed on the entire surface of the semiconductor element and used as an electrode in the metal filling process. When the metal filling process is an electroplating forming process, the seed layer 7 is also used as a base layer for forming electroplating. The material of the seed layer 7 can also be, for example, Ni (nickel), W (tungsten), Cr (chromium), Cu (copper), Co (cobalt), Ti (titanium), and the like. The thickness of the seed layer 7 may also be, for example, 0.02-2 μm.

After the seed layer 7 is formed, the coating agent 3 is formed on the seed layer 7 . The coating agent 3 may be, for example, a photosensitive type, a thermosetting type, or a combination of light and heat. The coating agent 3 is formed so that the film becomes uniform by using, for example, spin coating, a bar coater, spray coating, a jet dispense method, or the like.

Next, the coating agent opening step shown in FIGS. 1( b ) and ( c ) will be described. First, as shown in FIG. 1( b ), the identification mark 14 provided on the nanoimprint mold 5 is aligned with the identification mark 4 provided on the semiconductor element 1 . Here, the nanoimprint mold 5 is a mold for transfer, and is provided with minute protrusions at predetermined intervals on one surface thereof. 1(f)) of the same size and shape. For example, on the nanoimprint mold 5 , a protrusion 5 a is formed so as to face the electrode terminal 2 . The shape of the protrusion may be, for example, a circle, a square, or an octagon.

The nanoimprint mold 5 may be formed of, for example, one of quartz, glass, and silicone resin, or may be formed by laminating multiple types. For example, if soft silicone resin is used on the surface of the nanoimprint mold 5 , it can absorb the warping and undulation of the semiconductor element 1 , so it is preferable.

The nanoimprint mold 5 may be formed, for example, by flowing and hardening the material of the nanoimprint mold 5 after the original plate is produced. Here, the produced original plate has a plurality of recesses having a size equal to the opening diameter of the opening 3 a at intervals equal to those of the openings 3 a formed in the coating agent 3 . The original plate can also be formed, for example, by etching silicon, quartz, or glass or by electrical discharge machining. The outer dimensions of the nanoimprint mold 5 are larger than those of the semiconductor element 1 . Also, the shape of the nanoimprint mold 5 is, for example, a rectangle.

Next, as shown in FIG. 1( c), pressurize the nanoimprint mold 5 to reduce the distance between the nanoimprint mold 5 and the electrode terminals 2 until the nanoimprint mold 5 is pressed against the semiconductor element 1. electrode terminal 2. Here, the coating agent 3 is liquid.

Next, in the coating agent hardening step (nanoimprint step) shown in FIG . Coating agent 3 will react with energy. For example, the coating agent 3 is irradiated with light such as ultraviolet light 13 (see FIG. 2A ) through the nanoimprint mold 5 and then heated. Here, if the nanoimprint mold 5 is translucent to light of a wavelength at which the coating agent 3 reacts, the coating agent 3 can be made to react to the light irradiated through the nanoimprint mold 5, so that more ideal. The nanoimprint mold 5 is formed of a light-transmitting material such as quartz, glass, and transparent silicone resin, for example.

Next, as shown in FIG. 1( e ), the nanoimprint mold 5 is pulled up. In this way, fine openings 3 a are formed in the coating agent 3 . Here, if the difference in solubility parameter between the material of the nanoimprint mold 5 and the material of the coating agent 3 is, for example, 2.0 or more, it is preferable because the mold releasability after the coating agent hardens will be improved. For example, when a silicone resin with a solubility parameter of 7.3 to 7.6 is used in the nanoimprint mold 5, an acrylic resin with a solubility parameter of 9.5 to 12.5 or an epoxy resin with a solubility parameter of 10.9 to 11.2 can be used for the coating. Agent 3 material. In addition, it is preferable to form a release film on the surface of the nanoimprint mold 5 with a light-transmitting metal or resin, because the release property will be further improved. For the release film, for example, nickel, indium tin oxide, silicone rubber, fluororubber, etc. are used.

Next, in a developing step shown in FIG. 1( f ), the semiconductor element 1 is immersed in a developing solution in a developing solution tank (developing unit) 6 . When the developer in the developer tank 6 enters the opening 3a, the inner wall of the opening 3a of the coating agent 3 is dissolved, and the opening 3a expands in the radial direction. Here, the developer in the developer tank 6 has the function of dissolving the coating agent 3 . The developer in the developer tank 6 may be, for example, an aqueous solution of tetramethyl ammonium hydroxide or trimethyl-2-hydroxyethyl ammonium hydroxide.

The opening 3 a formed by the nanoimprint mold 5 is provided so as to open vertically and have the same shape over the entire semiconductor element 1 . The developer can flow into the opening 3 a at a uniform speed within the surface of the semiconductor element 1 . After that, the coating agent 3 is dissolved according to the degree of crosslinking of the coating agent 3 . Since the portion with a low degree of crosslinking of the coating agent 3 dissolves faster than the portion with a high degree of crosslinking of the coating agent 3 , by controlling the degree of crosslinking of the coating agent 3 , the shape of the opening 3 a can be controlled.

Next, as shown in FIG. 1( g ), the developer and residue that have flowed into the opening 3 a are removed by a cleaning solution. The cleaning solution is, for example, pure water, alcohol, ethanol, or propanol.

Then, in the plating step shown in FIG. deal with. As a result, the opening 3 a shown in FIG. 1( g ) is filled with plating. The plating solution may be, for example, a bottom-up filling plating solution composed of Cu, Co, Au, and the like. If such a plating solution is used, the wettability to the inner wall of the opening 3a will increase due to the catalytic effect of Cu, Co, Au, etc., and the injection of the plating solution will be difficult even in the tiny opening 3a. Since it becomes easy, it is preferable to form plating by inversion.

Next, in the coating agent peeling step shown in FIG. 1( i ), the coating agent 3 is immersed in a coating agent peeling liquid, and peeled from the semiconductor element 1 .

Finally, in the seed layer removal step shown in FIG. 1(j), if the seed layer 7 is removed by wet etching or ashing (ashing), a bump (protrusion) having an inclined surface 8a will be formed. Electrode) 8. Here, if a material whose etching rate is faster than that of the bump 8 is used for the seed layer 7, the amount of etching of the bump can be reduced in the seed layer removal step, and the shape of the bump after the coating agent stripping step can be maintained. is ideal. The seed layer 7 under the bump 8 remains as a conductive film.

＜Nanoimprint process＞ Referring to FIG. 1( d ), the above-mentioned light irradiation and heating steps through the nanoimprint mold 5 will be described in detail.

2A is a cross-sectional view conceptually showing light irradiation and heating steps in the manufacturing method of the semiconductor device according to the first embodiment. Fig. 2B is a graph showing light and temperature profiles in the method of manufacturing the semiconductor device according to the first embodiment.

As shown in FIG. 2A , the amounts of light received at position A and position B of the coating agent 3 when irradiated with ultraviolet light 13 of light quantity Q through the nanoimprint mold 5 are represented by Q _A and Q _B , respectively.

As shown in FIG. 2B , first, the position A and the position B of the coating agent 3 respectively receive the ultraviolet light 13 with the received light amounts Q _A , Q _B for a certain period of time. Since the amount of received light decreases as the distance from the nanoimprint mold 5 becomes longer, Q _A becomes larger than Q _B . At this time, the temperatures at the positions A and B of the coating agent 3 , the temperature T ₁ of the nanoimprint mold 5 , and the temperature T ₂ of the semiconductor element 1 are equal and constant.

In the wavelength region where the coating agent 3 reacts, if the light transmittance of the nanoimprint mold 5 is lower than the light transmittance of the coating agent 3, the control coating of the protrusion 5a by ultraviolet light 13 irradiation The degree of crosslinking around the opening of Agent 3 is ideal.

Next, as shown in FIG. 2B , the temperature _T1 of the nanoimprint mold 5 is raised to be higher than the temperature _T2 of the semiconductor element 1 and maintained for a certain period of time. If the thermal conductivity of the material forming the nanoimprint mold 5 is lower than that of the semiconductor element 1, it is ideal for controlling the temperature distribution in the coating agent 3 when the nanoimprint mold 5 is heated up. That is, heat is transmitted from position A to position B of the coating agent 3 at a slow speed through the nanoimprint mold 5 having a high temperature and low thermal conductivity. On the other hand, when the mounting table 11 on which the semiconductor element 1 is mounted functions as a heat sink for heat dissipation, the position B close to the coating agent 3 of the semiconductor element 1 is continuously cooled by passing through the semiconductor element 1 with high thermal conductivity. . As a result, the temperature _TA at the position A of the coating agent 3 becomes higher than the temperature TB at the position _B of the coating agent 3 when the temperature of the nanoimprint mold 5 is raised.

Due to the irradiation of ultraviolet light 13 and the temperature rise of the nanoimprint mold 5 , the amount of light received and heat in the thickness direction of the coating agent 3 will be distributed with a certain gradient. As a result, the degree of crosslinking of the coating agent 3 is also distributed in a constant gradient. In FIG. 2A , there is schematically shown component 9 which has undergone a crosslinking reaction. As shown in FIG. 2A , the degree of crosslinking in the site A of the coating agent 3 becomes higher than that in the site B of the coating agent 3 .

Afterwards, as shown in FIG. 2B , the nanoimprint mold 5 is cooled down to the temperature T ₂ of the semiconductor device 1 . After cooling, the temperatures in the positions A and B of the coating agent 3 , the temperature T ₁ of the nanoimprint mold 5 , and the temperature T ₂ of the semiconductor element 1 become equal.

After the nanoimprint mold 5 is peeled off from the coating agent 3, the coating agent 3 is immersed in a developing solution. In this way, the portion of the coating agent 3 with a lower degree of crosslinking at position B dissolves in the developer faster than the portion with a higher degree of crosslinking at position A. As a result, an inverted tapered opening is formed in the coating agent 3 after development.

Here, if the transmittance of the nanoimprint mold 5 is set to 50% or more and 80% or less, it is preferable to make the opening to be formed into an inverted tapered shape. For example, if the nanoimprint mold 5 is formed of, for example, a resin containing a dye component, it is preferable to reduce the transmittance. Furthermore, if a metal film is formed on the surface of the nanoimprint 5 by vapor deposition, sputtering, spraying, etc., it is ideal for reducing the transmittance of the nanoimprint 5 . By reducing the transmittance to 80% or less, it is possible to prevent scattering of leakage through the protruding portion 5a when light is irradiated or acceleration of the crosslinking degree around the opening caused by reflected light from the electrode terminal 2, And can form the distribution of crosslinking degree in the thickness direction. On the other hand, if the transmittance of the nanoimprint mold 5 is set to less than 50%, the photoreaction time becomes longer, so the difference in the degree of crosslinking between the position A and position B of the coating agent 3 becomes smaller. Small, the taper angle of the opening of the coating agent 3 can be made close to 90°.

<Example> Here, an example of Embodiment 1 will be described. The nanoimprint mold 5 uses polydimethylsiloxane (PDMS). The transmittance of PDMS at a wavelength of 365nm is 80%, and the thermal conductivity is 550W/mK. In addition, a 1 μm-thick sputtering film was formed on the front surface of the nanoimprint mold 5 .

After the coating agent 3 is supplied to the front surface of the semiconductor element 1, the temperature _T2 of the semiconductor element 1 is set to 70° C., and the temperature _T1 of the nanoimprint mold 5 is raised to 120° C. m imprint mold5. The film thickness of the coating agent 3 after pressurization was 5 μm.

Next, when the nanoimprint mold 5 is peeled off from the coating agent 3 , an opening with an opening diameter of 3 μm is formed in the coating agent 3 . Afterwards, if the development process is carried out, the opening will have an inverted cone shape with a top of 4 μm and a bottom of 6 μm.

＜Configuration and operation of nanoimprinting device＞ Next, a specific device configuration and operation for implementing the above manufacturing method will be described.

Fig. 3 is a perspective view conceptually illustrating the manufacturing apparatus 10 of the first embodiment.

The manufacturing apparatus 10 includes a mounting table 11, a recognition camera unit 12, a metal filling unit 18, a dispenser unit 20, a pressurizing unit 21, a temperature adjustment mechanism 23, a first roller 24a, and a second roller 24b. The manufacturing apparatus 10 further includes a developing unit 6 , a coating agent hardening unit 22 , a first drive mechanism 31 , a second drive mechanism 32 , a third drive mechanism 33 , and a position adjustment mechanism 34 .

The mounting stage 11 mounts the semiconductor element 1 .

The recognition camera unit 12 is used to photograph the mounting stage 11 and recognize the positional relationship between the nanoimprint mold 5 and the semiconductor element 1 according to the photographed image. The identification camera unit 12 is installed above the mounting table 11 so as to face the mounting table 11 , and photographs the mounting table 11 with a camera from above the mounting table 11 . For example, the recognition camera unit 12 recognizes the recognition mark 14 of the nanoimprint mold 5 and (refer to FIG. 1 ) the recognition mark 4 (refer to FIG. 1 ) of the semiconductor element 1 in the captured image, and according to the recognition result, Identify the positional relationship between the nanoimprint mold 5 and the semiconductor element 1 .

The metal filling unit 18 fills the opening of the coating agent 3 with metal that will become the bump 8 . The inner wall of the opening has been expanded in the radial direction by reacting with the developer. For example, the metal filling unit 18 is a plating bath for forming wet plating or dry plating. If the metal filling unit 18 is an electrolytic plating bath, it is ideal for forming bumps in the shape of an inverted cone with a top and a bottom of several μm.

The dispenser unit 20 is provided above the mounting table 11 , and supplies the coating agent 3 onto the semiconductor element 1 . The dispenser unit 20 is provided with drive mechanisms in the X-axis and Z-axis directions, and can supply the coating agent 3 onto the semiconductor element 1 over the entire front surface on the semiconductor element 1 .

The press unit 21 is provided above the mounting table 11 and pressurizes the nanoimprint mold 5 from above. The pressing unit 21 is, for example, a pressing roller.

The temperature adjusting mechanism 23 adjusts the temperature of at least one of the pressurizing unit 21 and the mounting table 11 . The temperature adjustment mechanism 23 is provided with a coil, for example, and when pressurized by the pressurizing unit 21, the aforementioned coil will inductively heat the pressurizing unit 21, so that the temperature in the semiconductor element 1 generates the constant gradient described above with reference to FIG. 2B. . At this time, the pressurizing unit 21 functions as a pressurizing jig that pressurizes while heating the coating agent 3 . Moreover, the temperature adjustment mechanism 23 includes, for example, a temperature adjustment device that cools the semiconductor element 1 through the mounting table 11 so that the temperature inside the semiconductor element 1 generates the constant gradient described with reference to FIG. 2B .

The first roller 24 a and the second roller 24 b apply tensile force to the nanoimprint mold 5 and fix both ends of the nanoimprint mold 5 . For example, by rotating the first roller 24a and the second roller 24b, the first roller 24a and the second roller 24b can adjust the tensile force applied to the nanoimprint mold 5 .

The developing unit 6 reacts the developer at the opening 3 a of the coating agent 3 to expand the opening 3 a in the radial direction. The developing unit 6 is, for example, a developer tank filled with a developer for immersing the semiconductor element 1 .

The coating agent curing unit 22 is installed above the mounting table 11 so as to face the mounting table 11 , and supplies energy for curing the coating agent 3 from above the nanoimprint mold 5 . Energy is given to the coating agent 3 via the nanoimprint mold 5 by, for example, at least one of irradiation with ultraviolet light 13 and contact with a heat source. In one example, the coating agent hardening unit 22 is an ultraviolet lamp. In another example, the pressurizing unit 21 and the temperature adjusting mechanism 23 can realize the function of the coating agent hardening unit 22 .

The first driving mechanism 31 will drive the first roller 24a and the second roller 24b, so that the nanoimprint mold 5 is in a direction perpendicular to the front surface of the semiconductor element 1 (not shown), for example, in a direction perpendicular to the X axis and Move in the Z-axis direction (up-down direction) of the Y-axis. The first drive mechanism 31 includes, for example, an electric motor.

The second drive mechanism 32 is driven as follows: while applying a certain pressure from the pressurizing unit 21, the pressurizing unit 21 is driven in a direction horizontal to the front surface of the semiconductor element 1 (not shown), for example, on the X-axis. direction to move. When the pressure unit 21 is a pressure roller, the second drive mechanism 32, for example, rotates the pressure roller and applies a constant pressure to the pressure roller. The second drive mechanism 32 includes, for example, an electric motor.

The third drive mechanism 33 is driven to move the coating agent curing unit 22 in a direction horizontal to the front surface of the semiconductor element 1 (not shown), for example, in the X-axis direction. The third drive mechanism 33 includes, for example, an electric motor.

The position adjustment mechanism 34 adjusts the positional relationship between the nanoimprint mold 5 and the semiconductor element 1 according to the positional relationship between the nanoimprint mold 5 and the semiconductor element 1 recognized by the recognition camera unit 12 . In one example, the position adjustment mechanism 34 is a motor, and is driven to move the mounting table 11 in the X-axis direction and the Y-axis direction. In another example, the first driving mechanism 31 can realize the function of the position adjusting mechanism 34 . The position adjustment mechanism 34 adjusts the position by aligning the nanoimprint mold 5 with respect to the semiconductor element 1 such that the identification mark 14 (see FIG. 1 ) overlaps the identification mark 4 (see FIG. 1 ), for example. relation.

<Example of opening of coating agent using nanoimprint device> A method of implementing the coating agent opening using the manufacturing apparatus 10 shown in FIG. 3 will be described below with reference to FIG. 4 .

Fig. 4 is a cross-sectional view illustrating a method of manufacturing the semiconductor device according to the first embodiment.

First, as shown in FIG. 4( a ), the semiconductor element 1 is mounted on the stage 11 . Next, as shown in FIG. 4( b ), the dispenser unit 20 supplies the coating agent 3 onto the semiconductor element 1 . Next, the front surface 5 c of the nanoimprint mold 5 is arranged to face the electrode surface of the semiconductor element 1 , and the nanoimprint mold 5 is aligned with the semiconductor element 1 using the recognition camera unit 12 .

Next, as shown in FIG. 4( c), the pressing unit 21 is driven to move in the X-axis direction, and the front side 5c of the nanoimprint mold 5 is pressed against the semiconductor by the pressing unit 21 from the back side 5b. Element 1. Here, as described above, the plurality of protrusions 5 a are formed over the entire surface of the front surface 5 c of the nanoimprint mold 5 . In this step, the gap between the nanoimprint mold 5 and the semiconductor device 1 is filled with the coating agent 3 .

Next, as shown in FIG. 4( d ), the coating agent curing unit 22 that irradiates ultraviolet rays to the back surface 5 b of the nanoimprint mold 5 moves along the X-axis at a constant speed.

Next, as shown in FIG. 4( e ), in order to heat the coating agent 3 , the press unit 21 heated by the temperature adjustment mechanism 23 moves in the X-axis direction.

Finally, as shown in FIG. 4( f ), minute openings can be formed in the coating agent 3 by peeling off the nanoimprint mold 5 .

＜Effect＞ As described above, according to the first embodiment, it becomes possible to stably form fine and multi-pin bumps while ensuring high productivity.

In the above description, although the case of combining light irradiation and heating has been described, the scope of application of the present disclosure is not limited to the above case. When the coating agent 3 is a photocurable material, the coating agent 3 does not need to be heated. Moreover, when the coating agent 3 is a thermosetting material, the coating agent 3 does not need to receive light irradiation.

In addition, in terms of the method of pressurizing the nanoimprint mold 5, the present disclosure has been described by taking the method of using the pressurizing unit 21, which is a pressure roller, as an example. However, the method of pressurizing the nanoimprint mold 5 It is not limited to this. The method of pressurization can also be, for example, the method of using a hot pressing method. The aforementioned hot pressing method is to use the heated mold, that is, the heating unit 21, to move the semiconductor element 1, the coating agent 3, and the nanoimprint mold 5 from top to bottom. Clamp.

[Summary of this disclosure] The manufacturing method of the semiconductor device of the present disclosure includes: a coating agent forming step of forming a coating agent covering the surface of a plurality of electrode terminals provided on a semiconductor element; a coating agent opening step of forming a mold for the opening, that is, a nanoimprint mold The coating agent is pressed against the plurality of electrode terminals with the coating agent interposed therebetween to form the openings in the coating agent; the coating agent hardening step is to apply energy to the coating agent through the nanoimprint mold to harden the coating agent a developing step of expanding the opening in the radial direction by reacting with a developer; a metal filling step of filling the opening with metal that will become a bump; and a stripping step of removing the coating agent from the plurality of electrode terminals Surface peeling.

In one aspect of the method of manufacturing a semiconductor device of the present disclosure, the energy is imparted to the coating agent by irradiating the nanoimprint mold with ultraviolet light, and the light transmittance of the nanoimprint mold is higher than The light transmittance of the aforementioned coating agent is lower.

In one aspect of the method of manufacturing a semiconductor device of the present disclosure, the energy is imparted to the coating agent by contacting the nanoimprint mold with a heat source, and the thermal conductivity of the nanoimprint mold is lower than that of the semiconductor device. The thermal conductivity of the element is lower.

In one aspect of the coating agent opening step of the manufacturing method of the semiconductor device of the present disclosure, the coating agent is heated with a pressure tool having a higher temperature than that of the semiconductor element via the nanoimprint mold.

The manufacturing apparatus of the semiconductor device of the present disclosure is provided with a pressurizing unit for pressing a nanoimprint mold, which is a mold having openings formed in a coating agent, against the plurality of electrode terminals with the coating agent interposed therebetween. Covering the surface of a plurality of electrode terminals on the semiconductor element; a coating agent curing unit that applies energy to the coating agent through the nanoimprint mold to harden the coating agent; a developing unit that makes the inner wall of the opening part and the developing unit The liquid reacts to expand in the radial direction; and the metal filling unit fills the opening with metal that will become a bump.

In one aspect of the semiconductor device manufacturing device disclosed herein, the aforementioned pressurizing unit is a pressurizing roller, and the aforementioned semiconductor device manufacturing device further includes: an identification camera unit for identifying the aforementioned semiconductor element and the aforementioned nanoimprint mold The positional relationship between them; the position adjustment mechanism adjusts the positional relationship between the aforementioned semiconductor element and the aforementioned nanoimprinting mold according to the identified aforementioned positional relationship; the distributor unit supplies the aforementioned coating agent to the surface of the aforementioned electrode terminal, to cover the surface of the plurality of electrode terminals; the first roller and the second roller stretch the two ends of the nanoimprint mold; the first driving mechanism drives the first roller and the second roller to make the nano The imprinting mold moves in a direction perpendicular to the front of the semiconductor element; the second drive mechanism drives the pressure roller so that the pressure roller rotates and moves in a direction horizontal to the front of the semiconductor element; 3. a drive mechanism for driving the coating agent hardening unit in a direction horizontal to the front surface of the semiconductor element; and a temperature adjustment mechanism for adjusting the temperature gradient in the coating agent.

The disclosed semiconductor device includes: a semiconductor element having a plurality of electrode terminals; a seed layer covering the plurality of electrode terminals; and a bump formed on the seed layer, and the bump has an inclined surface. Industrial availability

This disclosure is useful in the assembly of increasingly multi-pin and larger-diameter semiconductor devices.

1‧‧‧semiconductor element 2‧‧‧electrode terminal 3‧‧‧coating agent 3a‧‧‧opening 4‧‧‧identification mark 5‧‧‧nanoimprinting mold 5a‧‧‧protrusion 5b‧‧‧back 5c‧‧‧front side 6‧‧‧developing unit (developer tank) 7‧‧‧seed layer 8‧‧‧bump (protruding electrode) 8a‧‧‧inclined surface 9‧‧‧crosslinking component 10‧‧‧ Manufacturing device 11‧‧‧mounting platform 12‧‧‧identification camera unit 13‧‧‧ultraviolet light 14‧‧‧identification mark 18‧‧‧metal filling unit 19‧‧‧power supply 20‧‧‧distributor unit 21‧‧ ‧Pressure unit 22 ‧‧‧coating agent hardening unit 23 ‧‧‧temperature adjustment mechanism 24a‧‧‧first roller 24b‧‧‧second roller 31‧‧‧first drive mechanism 32‧‧‧second drive mechanism 33 ‧‧‧Third driving mechanism 34‧‧‧position adjustment mechanism 101‧‧‧silicon substrate 102‧‧‧insulating film 103‧‧‧aluminum pad 104‧‧‧protective film 105‧‧‧dislocation metal 106‧‧‧convex Block 107, 108‧‧‧Coating Agent A, B‧‧‧Position T ₁ , T ₂ , T _A , T _B ‧‧‧Temperature Q‧‧‧Light Q _A , Q _B ‧‧‧Received Light, Irradiated X , Y, Z‧‧‧direction

Fig. 1 is a cross-sectional view illustrating a method of manufacturing a semiconductor device according to Embodiment 1. 2A is a cross-sectional view conceptually showing light irradiation and heating steps in the manufacturing method of the semiconductor device according to the first embodiment. Fig. 2B is a graph showing light and temperature profiles in the method of manufacturing the semiconductor device according to the first embodiment. Fig. 3 is a perspective view conceptually illustrating the manufacturing apparatus of the semiconductor device according to the first embodiment. Fig. 4 is a cross-sectional view illustrating a method of manufacturing the semiconductor device according to the first embodiment. FIG. 5 is a cross-sectional view conceptually showing a conventional bump forming method.

1‧‧‧Semiconductor components

2‧‧‧Electrode terminal

3‧‧‧Coating agent

3a‧‧‧opening

4‧‧‧identification mark

5‧‧‧Nanoimprint mold

5a‧‧‧protrusion

6‧‧‧Developer unit (developer tank)

7‧‧‧Seed layer

8‧‧‧Bump (protruding electrode)

8a‧‧‧Inclined surface

10‧‧‧Manufacturing device

14‧‧‧identification mark

18‧‧‧Metal filling unit

19‧‧‧Power

Claims (7)

A method for manufacturing a semiconductor device, comprising: a coating agent forming step of forming a coating agent that covers the surfaces of a plurality of electrode terminals provided on a semiconductor element; a coating agent opening step of clamping a mold for the opening, that is, a nanoimprint mold The aforementioned coating agent is pressed against the aforementioned plurality of electrode terminals, thereby forming the aforementioned opening in the aforementioned coating agent; the step of hardening the coating agent is to give energy to the aforementioned coating agent through the aforementioned nanoimprinting mold to harden the aforementioned coating agent; A developing step of expanding the opening in the radial direction by reacting with a developer; a metal filling step of filling the opening with metal that will become a bump; and a stripping step of removing the coating agent from the surfaces of the plurality of electrode terminals. peel off. The method of manufacturing a semiconductor device according to claim 1, wherein the energy is imparted to the coating agent by irradiating the nanoimprint mold with ultraviolet light, and the light transmittance of the nanoimprint mold is higher than that of the coating agent lower light transmittance. The method of manufacturing a semiconductor device according to claim 1, wherein the energy is imparted to the coating agent by contacting the nanoimprint mold with a heat source, and the thermal conductivity of the nanoimprint mold is higher than that of the semiconductor element. rate is lower. The method for manufacturing a semiconductor device as claimed in Claim 1, wherein In the step of opening the coating agent, the coating agent is heated by a pressure unit having a higher temperature than that of the semiconductor element via the nanoimprint mold. An apparatus for manufacturing a semiconductor device, comprising: a pressurizing unit for pressing a nanoimprint mold, which is a mold for forming an opening in a coating agent, against the plurality of electrode terminals with the coating agent interposed therebetween. Covering the surface of a plurality of electrode terminals on the semiconductor element; a coating agent hardening unit that applies energy to the coating agent through the nanoimprint mold to harden the coating agent; a developing unit that makes the inner wall of the opening part and the developer solution The reaction expands in the radial direction; and the metal filling unit fills the opening with metal that will become a bump. The semiconductor device manufacturing device according to claim 5, wherein the pressurizing unit is a pressurizing roller, and the semiconductor device manufacturing device further includes: a recognition camera unit for recognizing the position between the semiconductor element and the nanoimprint mold relationship; a position adjustment mechanism, which adjusts the positional relationship between the aforementioned semiconductor element and the aforementioned nanoimprint mold according to the identified aforementioned positional relationship; the distributor unit, which supplies the aforementioned coating agent to the surface of the aforementioned electrode terminal, so as to Covering the surface of a plurality of electrode terminals; the first roller and the second roller stretch the two ends of the aforementioned nanoimprinting mold; The first drive mechanism drives the first roller and the second roller to move the nanoimprint mold in a direction perpendicular to the front surface of the semiconductor element; the second drive mechanism drives the pressure roller to move the The pressure roller rotates and moves in a direction horizontal to the front surface of the aforementioned semiconductor element; the third drive mechanism drives the aforementioned coating agent hardening unit in a direction horizontal to the front surface of the aforementioned semiconductor element; and a temperature adjustment mechanism adjusts the aforementioned coating agent temperature gradient inside. A semiconductor device comprising: a semiconductor element having a plurality of electrode terminals; a seed layer covering the plurality of electrode terminals; and a bump formed on the seed layer, wherein the bump has an inclined surface, and the bump The bottom surface is equal to the area of the aforementioned seed layer.

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