TWI763755B - Gas supply device, plasma processing device, and manufacturing method of gas supply device - Google Patents

Abstract

Electrode member with electrode member formed with a plurality of gas discharge ports The gas supply device for slurry processing provides a technique for uniformizing the film thickness of the thermal spray film formed in the gas discharge port.

In having been used for plasma processing, a plurality of gases are formed In the gas supply device for the electrode plate (32B) of the flow path (41), the boundary portion (Pa) of the gas flow path (41) and the gas discharge port (40) is bent to the outside so as to form a corner, The face is formed from the inner peripheral face on the outer side of the corner to the lower face (300). Therefore, when the spray material (50) is sprayed to the gas discharge port (40), the angle formed by the direction of spraying the melt spray material (50) and the inner peripheral surface of the gas discharge port (40) becomes larger, which can Thinning is prevented in the vicinity of the boundary on the upstream side of the gas discharge port (40).

Description

Gas supply device, plasma processing device, and manufacturing method of gas supply device

The present invention relates to the technical field of a gas supply device including an electrode member used for plasma processing a substrate.

As a semiconductor manufacturing apparatus, a plasma processing apparatus for subjecting a substrate to a film formation process or etching by plasma, for example, a gas supply unit called a gas shower head which also functions as an upper electrode, and A parallel plate type plasma processing device that applies high-frequency power between the mounting tables of the substrate used for the lower electrode.

In such a plasma processing apparatus, a plurality of gas flow paths are formed in the upper electrode used in the gas supply section, and a gas discharge port (gas orifice) with an enlarged hole is formed at the lower end of the gas flow path. In such an upper electrode, it is a problem that the oxide scale aluminum formed on the surface of the upper electrode is consumed by plasma, causing generation of particles or abnormal discharge. Therefore, it is required to improve the plasma resistance of the gas discharge port.

In order to improve the plasma resistance of the upper electrode, for example, as described in Patent Documents 1 and 2, there is known a technique of forming a protective film by ceramic spraying on the surface of the gas outlet to which the oxide skin is treated with aluminum. when as When forming a spray film near the opening of the gas outlet, for example, the spray material is sprayed from the spray gun in a direction perpendicular to one surface of the upper electrode (the surface facing the mounting table), and the spray gun is directed along the direction of the spray gun. The above-mentioned one surface is moved in parallel to form a sprayed film at each gas outlet.

However, when the spraying material is sprayed by the spraying gun from the direction perpendicular to the above-mentioned surface, the angle between the inner peripheral surface and the spraying direction of the spraying material at the upstream side of the inner peripheral surface of the gas discharge port It becomes smaller, and it is difficult to spray the spray material. Therefore, there is a tendency that the sprayed film becomes thinner at the upstream portion of the gas discharge port. When the spray film is locally thinned, at the thinned part, the spray film is cut and the lower layer is easily exposed, and there is a problem that the service life of the upper electrode is shortened. Furthermore, when adjusting the angle of the spray gun and adjusting the spray angle of the spray material while spraying, there is a problem that the spray process becomes complicated.

[Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 5782293

[Patent Document 2] Japanese Patent No. 5198611

The present invention has been made in view of such circumstances, and an object of the present invention is to provide a gas supply device for plasma processing provided with an electrode member formed with a plurality of gas discharge ports, which seeks to make the melt formed in the gas discharge ports. The technology of uniform film thickness of injection film.

The gas supply device of the present invention includes: an electrode member for generating plasma; a plurality of gas flow paths formed on the electrode member so as to extend toward one surface of the electrode member; and a gas discharge port for Continuously formed on the downstream end of the above-mentioned gas flow path, and the aperture is enlarged toward the above-mentioned face; At the boundary between the gas flow path and the gas discharge port, the inner peripheral surface is curved outward to form a corner portion, and the curved surface is formed from a portion of the inner peripheral surface located on the outer side of the corner portion to one surface of the electrode member. The side surface, when viewed in a cross-section along the axis of the gas flow path, is a straight line from the corner portion to the inner end of the curved surface.

Furthermore, the gas supply device of the present invention includes: an electrode member for generating plasma; a plurality of gas flow paths formed on the electrode member so as to extend toward one surface of the electrode member; and a gas discharge port , which is continuously formed at the downstream end of the above-mentioned gas flow path, and the aperture is enlarged toward the above-mentioned side; At the boundary between the gas flow path and the gas discharge port, the inner peripheral surface is bent outward to form a corner portion, and when viewed in a cross-section along the axis of the gas flow path, from the corner portion to the gas discharge port The inner peripheral surface of the outer end is a straight line, and the angle θ2 formed by the straight line and the axis of the gas flow path is set in the range of 45 degrees to 70 degrees.

The method of manufacturing a gas supply part of the present invention is the method of manufacturing the gas supply device, characterized in that the spray part for spraying the spray material toward the surface on which the gas discharge port is formed in the electrode member is directed toward A spray film is formed by moving in a direction orthogonal to the extending direction of the gas flow path.

The plasma processing apparatus of the present invention is characterized by comprising: a processing container for generating plasma in the interior thereof; a stage for mounting the substrate arranged in the processing container; and the gas supply device for A process gas for plasma processing is supplied into the process container; a high-frequency power supply unit is used for supplying high-frequency power between the stage and the electrode member; and an exhaust mechanism is used for vacuuming the interior of the process container exhaust.

In the present invention, in a gas supply device having an electrode member used for plasma processing and formed with a plurality of gas flow paths, the boundary between the gas flow path and the gas discharge port is curved outward so as to form a corner, and the curved surface is It is formed from the inner peripheral surface located on the outer side of the corner portion to one surface side of the electrode member. Therefore, when spraying the thermal spray material to the gas discharge port, the angle formed by the spray direction of the thermal spray material and the inner peripheral surface of the gas discharge port becomes large, and it is possible to prevent the gas discharge port near the boundary on the upstream side. Thin film.

Furthermore, in another invention, at the boundary between the gas flow path and the gas outlet, the inner peripheral surface is bent outward so as to form the first corner portion, and the inner peripheral surface outside the first corner portion is further bent outward. , forming a second corner portion to be continuous with one surface side of the electrode member. In addition, the angle θ2 formed by the straight line along the inner wall from the first corner portion to the second angle and the axis of the gas flow path is set to be 45° or more and 70° or less. Therefore, since the angle formed by the spraying direction of the thermal spray material and the inner peripheral surface of the gas discharge port becomes larger, the spray film of the same gas discharge port can easily be formed with a uniform film thickness.

2: Carrier

5: Spray Department

6: Spray film

10: Handling the container

21: Lower electrode

30: Sprinkler

32B: Electrode plate

40: Opening

42: Straight Parts

43: Curve part

50: Spray part

G: glass substrate

FIG. 1 is a cross-sectional view of a plasma processing apparatus to which the gas supply apparatus of the present invention is applied.

FIG. 2 is an explanatory diagram for explaining the manufacturing process of the shower head.

FIG. 3 is an explanatory diagram illustrating a process of forming a spray film of a shower head.

FIG. 4 is an explanatory diagram illustrating a process of forming a spray film of a shower head.

FIG. 5 is an explanatory diagram illustrating a process of forming a spray film of a conventional shower head.

6 is a cross-sectional view showing a gas discharge port.

FIG. 7 is an explanatory diagram showing a gas discharge port during plasma processing.

8 is a cross-sectional view showing a gas discharge port of a gas supply unit according to a second embodiment.

9 is a cross-sectional view showing a gas discharge port of a shower head according to a comparative example.

FIG. 10 is an explanatory diagram illustrating a measurement location of the film thickness in the Example.

[the first embodiment]

A plasma processing apparatus using the gas supply apparatus according to the first embodiment will be described. As shown in FIG. 1 , the plasma processing apparatus includes a processing vessel 10 which is a vacuum vessel made of, for example, aluminum or stainless steel, which is grounded. On the side surface of the processing container 10, there is provided a loading/unloading port 11 for accepting and receiving a substrate to be plasma-processed, ie, a rectangular glass substrate G, and a gate valve 12 for opening and closing the loading/unloading port 11 is provided at the loading/unloading port 11.

In the center part of the bottom surface of the processing container 10, there is provided a susceptor 2 in which the planar shape on which the glass substrate G is placed is rectangular, that is, the side peripheral surface from the upper surface to the lower surface is flat. The carrier 2 includes, for example, a lower electrode 21 made of aluminum or stainless steel whose surface is treated with aluminum oxide. The lower electrode 21 is supported on the bottom of the processing container 10 via an insulating member 22 . The upper surface of the lower electrode 21 becomes the substrate placement surface 21A covered by ceramic spraying. Furthermore, a ring-shaped shielding member 28 is provided so as to surround the periphery of the substrate placement surface 21A, and an outer ring-shaped shielding member 29 is provided on the entire periphery of the side surface of the lower electrode 21 .

In the substrate placement surface 21A of the lower electrode 21, the electrostatic electrode plate 23 for the chuck connected to the DC power supply 27 is embedded. when electrostatic electrodes When a positive DC voltage is applied to the plate 23, negative charges are attracted to the surface of the glass substrate G placed on the substrate placement surface 21A. A potential difference is generated between the electrostatic electrode plate 23 and the glass substrate G, and the glass substrate G is adsorbed and held on the substrate placement surface 21A by the Coulomb force caused by the potential difference. Inside the lower electrode 21, a ring-shaped cooler flow path (not shown) is provided. In the cooler flow path, a heat transfer medium of a specific temperature is circulated and supplied, for example, Galden (registered trademark), which can be determined by the temperature of the heat transfer medium. , the processing temperature of the glass substrate G placed on the substrate placement surface 21A is controlled.

Furthermore, in the carrier 2, the lift pins 24 for receiving and transferring the glass substrate G between the carrier 2 and the external conveying arm are provided so as to penetrate the lower electrode 21, the insulating member 22 and the bottom surface of the processing container 10 in the vertical direction, so as to pass through the lower electrode 21, the insulating member 22 and the bottom surface of the processing container 10 in the vertical direction. The surface of the lower electrode 21 protrudes and sinks.

Furthermore, on the surface of the substrate placement surface 21A, a plurality of heat transfer gas discharge holes (not shown) are opened, and a heat transfer gas such as helium (He) gas is supplied to the substrate placement surface 21A and the glass substrate G from the heat transfer gas discharge holes. between. The heat between the glass substrate G and the susceptor 2 is efficiently transferred by the He gas.

To the lower electrode 21 , a high-frequency power supply unit 25 for forming an electric field for plasma generation in the processing container 10 is connected via a matching device 26 . The high-frequency power supply unit 25 is configured to output, for example, a relatively high frequency such as a high frequency of 13.56 MHz. In addition, a plurality of exhaust ports 13 are opened at equal intervals on the bottom surface of the processing container 10 over the entire periphery of the processing container 10 . The exhaust port 13, the exhaust pipe 14, and the vacuum exhaust unit 15 correspond to an exhaust mechanism.

The upper surface of the processing container 10 is provided with a gas supply unit 30 , which is a gas supply device for supplying a gas for plasma processing such as CF ₄ to the glass substrate G so as to face the upper surface of the carrier 2 . The gas supply unit 30 is generally referred to as a "shower head", and when the shower head 30 is described below, the shower head 30 includes an upper member 32A having a flat recessed portion formed on the lower surface of aluminum as a base material, for example, and a sealing upper member 32A. The electrode member below the member 32A is the electrode plate 32B. The gap between the upper member 32A and the electrode plate 32B forms a diffusion space 31 for diffusing the process gas. The electrode plate 32B is formed with a plurality of gas flow paths 41 penetrating the electrode plate 32B in the thickness direction, and each communicating with the diffusion space 31 . Furthermore, on the upper surface of the shower head 30, a process gas supply pipe 33 connected to the diffusion space 31 is provided, and in the process gas supply pipe 33, a process gas supply source 34 such as CF4 is provided in order from the upstream side _. The flow rate adjustment unit 35 and the valve 36 are configured to supply the process gas to the shower head 30 .

As shown in FIG. 2 , on the electrode plate 32B of the shower head 30 . A gas flow path 41 is provided to allow the gas to flow from the diffusion space 31 to the side of the surface facing the carrier 2 (the side of the processing space where the plasma is excited). When the diffusion space 31 side is upstream and the processing space side is downstream, the gas flow path 41 is formed to have a large-diameter flow path 41a on the upstream side, a small-diameter flow path 41b on the downstream side, and a downstream side. At the end, a gas discharge port 40 opened on the side of the processing space where the plasma is excited is formed. The inner diameter of the large-diameter flow path 41a of the gas flow path 41 is set to, for example, 2 mm. Furthermore, the small-diameter flow path 41b is formed, for example, with an inner diameter of 0.5 to 1.0 mm to prevent the plasma excited on the processing space side from entering the upstream side of the gas flow path 41 .

The inner peripheral side of the gas discharge port 40 is chamfered over the entire circumference, and the hole diameter becomes wider from upstream to downstream. The slope portion of each gas outlet 40 is inclined at an angle θ1 with respect to the axis L of the gas channel 41 from the upstream end toward the downstream when viewed in a cross-section including the axis L of the gas channel 41 , here A straight portion 42 of 45° and a curved portion 43 extending from the downstream end of the straight portion 42 toward the outside and continuing to the lower surface (opposing surface) 300 facing the carrier 2 are formed. The radius of curvature of the curved portion 43 is formed as a curve with a size of 1 mm. That is, the gas discharge port 40 is at the boundary between the gas discharge port 40 and the gas flow path 41 , and is curved outward so that the inner peripheral surface forms the corner of the boundary portion Pa, and the curved surface extends from the side of the gas discharge port 40 relative to the gas discharge port 40 . The corner portion of the boundary portion Pa is formed to the lower surface 300 of the electrode plate 32B at a position close to the downstream side. In addition, the lower surface 300 represents a flat surface portion outside the boundary portion Pb at the terminal end of the curved surface of the gas discharge port 40 .

The entire surface of the electrode plate 32B including the upper member 32A, the gas flow path 41 and the inner peripheral surface of the gas discharge port 40 is anodized, for example, and the entire surface of the shower head 30 is covered with hard oxide aluminum 30A. Then, melting is performed to form a protective film of yttrium oxide (Y ₂ O ₃ ), yttrium fluoride (YF ₃ ), or aluminum oxide (Al ₂ O ₃ ) on one surface side of the opening of the gas discharge port 40 of the electrode plate 32B. Film treatment. As shown in FIG. 3 , the spraying apparatus includes a spraying section 5 such as a plasma spraying gun that sprays the spraying material 50 . When the spray film 6 is formed, it is fixed so that the discharge direction of the spray material 50 is perpendicular to the lower surface 300 of the electrode plate 32B.

Then, as shown in FIG. 3 , the spraying material 50 is sprayed from the spraying part 5 toward the lower surface 300 of the electrode plate 32B so that the spraying part 5 is in the gas flow path 41 . The extending direction is parallel to the direction perpendicular to the direction, and the thermal spray film 6 is formed in each gas discharge port 40 . As described above, the gas outlet 40 is along the straight line portion 42 of the inner wall when viewed in the aforementioned cross-section, and the angle formed by the axis L is set to 45°. In addition, the gas discharge port 40 is curved outward at the boundary portion Pa between the gas discharge port 40 and the gas flow path 41 so as to form a corner on the inner peripheral surface, and the downstream side of the straight portion 42 of the gas discharge port 40 is configured by Connected to the lower surface 300 of the electrode plate 32B by a curved surface.

When the spray material 50 is sprayed toward the gas discharge port 40 in parallel with the axis L of the gas flow path 41, as shown in FIG. The angle α between the inner surfaces becomes 45°.

In this regard, as shown in FIG. 5 , the side peripheral surface of the gas discharge port 40 is curved, and the curved surface is formed from the boundary portion between the gas discharge port 40 and the gas flow path 41 (the upstream end of the gas discharge port 40 ) to the In the case of the lower surface 300 of the electrode plate 32B, in the vicinity of the upstream end of the gas discharge port 40, the angle α between the spray angle of the spray material 50 and the inner surface of the gas discharge port 40 is less than 45°.

Therefore, when the spray material 50 is sprayed on the surface of the electrode plate 32B on the processing space side as shown in FIG. In the shown gas discharge port 40 , in the region upstream of the gas discharge port 40 , the angle α at which the thermal spray material 50 is sprayed on the inner peripheral surface of the gas discharge port 440 becomes smaller. Therefore, on the upstream side of the gas discharge port 40, the film thickness of the thermal spray film 6 is reduced.

In contrast, in the gas discharge port 40 shown in FIG. 4 , the thermal spray material 50 is sprayed at an angle of 45° to the inner peripheral surface of the gas discharge port 40 . because Therefore, even at the upstream end portion of the gas discharge port 40 , the film thickness is equal to that of the spray film 6 formed on the lower surface 300 . Therefore, as shown in FIG. 6 , the spray film 6 is uniformly formed on the inner surface of the gas discharge port 40 . In addition, the horizontal distance S1 from the corner of the boundary portion Pa between the discharge port 40 and the gas flow path 41 to the boundary portion Pb between the gas discharge port 40 and the lower surface 300 of the electrode plate 32B is formed to be 1 mm or less.

In addition, the horizontal distance S1 between the boundary portion Pb and the boundary portion Pa is preferably set to 0.5 to 1 mm. Therefore, when a curved surface connects the downstream end portion and the lower surface 300 of the electrode plate 32B, the angle θ1 formed by the inner wall of the gas discharge port 40 and the axis L is preferably set to 45 to 50°.

In this way, after the electrode plate 32B on which the spray film 6 is formed is joined to the upper member 32A, the electrode plate 32B is set in the processing container 10 to which the processing gas supply pipe 33 described above is connected, and is connected to the ground potential. Accordingly, the electrode plate 32B of the shower head 30 and the lower electrode 21 together constitute a pair of parallel plate electrodes.

Next, the function of the plasma processing apparatus will be described by taking, for example, an etching process as an example. When the plasma processing apparatus operates, the glass substrate G, which is the substrate to be processed, is placed on the substrate placement surface 21A by the cooperative action of the external conveyance arm and the lift pins 24 . Next, after closing the gate valve 12, a heat transfer gas is supplied between the substrate placement surface 21A and the glass substrate G, and a DC voltage is applied to the electrostatic electrode plate 23, and the glass substrate G is adsorbed and held.

Next, a process gas including an etching gas such as CF ₄ is supplied from the gas supply unit 3 into the process container 10 , and is evacuated from the exhaust port 13 to adjust the pressure in the process container 10 to a specific pressure. After that, high-frequency power for plasma generation is applied to the lower electrode 21 body from the high-frequency power supply unit 25 through the matching device 26 , so that a high-frequency electric field is generated between the lower electrode 21 and the shower head 30 . The processing gas supplied into the processing container 10 is excited by a high-frequency electric field generated between the lower electrode 21 and the shower head 30 to generate plasma of the processing gas. Furthermore, the ions contained in the plasma are attracted to the lower electrode 21, and the to-be-processed film of the glass substrate G is etched. After that, the glass substrate G subjected to the etching process is carried out from the processing container 10 by an external carrying arm.

In this way, in the plasma processing apparatus, when the plasma is excited in the processing container 10 , the surface of the shower head 30 on the processing space side is in contact with the plasma P as shown in FIG. 7 . At this time, in the gas discharge port 40, although the plasma is in contact with the inner surface of the gas discharge port 40, since the inner diameter of the flow path 41b on the downstream side of the gas flow path 41 is narrowed, the plasma P enters the gas The risk on the flow path 41 side is small. Furthermore, since the gas outlet 40 is covered by the spray film 6 , the layer of the hard oxide aluminum 30A on the lower layer side of the spray film 6 is protected to isolate the plasma P. As shown in FIG.

Furthermore, by repeating the plasma treatment, the film thickness of the thermal spray film 6 is gradually reduced due to consumption. At this time, when the film thickness of the spray film 6 formed at the gas discharge port 40 is not uniform, in the portion where the film thickness of the spray film 6 is thin, the layer of the hard oxide aluminum 30A on the lower layer side or the electrode plate 32B The base material, that is, aluminum, is partially exposed. When aluminum, which is the base material of the electrode plate 32B, is exposed, it becomes a cause of abnormal discharge at the gas discharge port 40 or generation of particles originating from aluminum, so the gas supply part 3 must be replaced or repaired.

As described above, since the shower head 30 is formed at the gas discharge port 40 with high uniformity in the film thickness of the spray film 6, thinning of the spray film 6 when the plasma treatment is repeated is suppressed. As a result, the aluminum on the lower layer side is partially exposed, so that the service life of the shower head 30 becomes longer, and the period of replacement or maintenance can be increased.

According to the first embodiment, in a gas supply device having an electrode plate 32B used for plasma processing and having a plurality of gas flow paths 41 formed thereon, at the boundary portion Pa between the gas flow path 41 and the gas discharge port 40 , which is bent to the outside so as to form a corner, and a curved surface is formed from the inner peripheral surface on the outside of the corner to the lower surface 300 . Therefore, when the spray material 50 is sprayed to the gas discharge port 40 , the angle formed by the direction of spraying the melt spray material 50 and the inner peripheral surface of the gas discharge port 40 becomes larger, which can prevent upstream of the gas discharge port 50 Thinning near the boundary of the side.

In this way, when the spray film 6 is formed in the gas supply part 3 , by spraying the spray material 50 from the extending direction of the gas flow path 41 , the spray film 6 can be uniformly formed at the gas discharge port 40 , so that the spray can be The spraying part 5 for blowing the spraying material 50 moves in a direction orthogonal to the extending direction of the gas flow path 41 to change the position of spraying the spraying material 50 . According to this, uniform spraying can be formed at each gas outlet 40 . Membrane 6.

Therefore, the film forming process of the spray film becomes simple, such as adjusting the spraying angle of the spray material 50 of the spray part 5, and the complicated process of spraying the spray material 50 to the thin part of the spray film 6 is unnecessary.

Moreover, even if it is applicable to the plasma processing apparatus which performs the film formation processing on the substrate, it is not limited to the plasma processing apparatus which performs the plasma processing on the glass substrate G The plasma processing apparatus may be a plasma processing apparatus that performs plasma processing on, for example, a disc-shaped wafer having a diameter of 300 mm.

[the second embodiment]

Furthermore, as the gas supply device according to the second embodiment, even when each gas discharge port 40 is viewed in a cross-section including the axis L as shown in FIG. It is constituted by the inclined surface of the straight portion 42, the boundary portion Pa between the upstream end portion of the gas discharge port 40 and the gas flow path 41, the downstream side end portion of the gas discharge port 40, the lower surface 300 of the electrode plate 32B, and the boundary portion Pb. It may be configured as the first corner portion and the second corner portion, respectively. As shown in the embodiments to be described later, if the angle θ2 of the inner surface of each gas discharge port 40 is 45° or more with respect to the axis L, when the spray material 50 is sprayed from the spray part 5 , the gas discharge port 40 is The thermal spray film 6 is formed uniformly, so it has the same effect.

Furthermore, as shown in FIG. 8, in the gas discharge port 40, when the angle θ2 formed by the inner surface of each gas discharge port 40 and the axis L becomes large, the downstream end portion of the gas discharge port 40 needs to be enlarged. The inner diameter is reduced, or the height dimension from the upstream end to the downstream end of the gas discharge port 40 is decreased. When the inner diameter of the downstream end portion of the gas discharge port 40 increases, the degree of freedom in the arrangement layout and number of the gas discharge ports 40 provided on the surface of the gas supply unit 3 on the processing space side is limited. Furthermore, when the height dimension from the upstream end to the downstream end of the gas discharge port 40 is low, the flow velocity of the gas to be discharged becomes high, and the gas flow path 41 tends to be blocked. Therefore, the angle θ2 formed by the inner wall of each gas outlet 40 and the axis L is preferably 70° or less, The horizontal distance S2 between the boundary portion Pb on the downstream side of the gas discharge port 40 and the boundary portion Pa on the upstream side is preferably 1 to 3 mm.

Furthermore, as shown in the embodiments to be described later, even when the boundary portion Pb between the downstream end portion of the gas discharge port 40 and the lower surface 300 of the electrode plate 32B is defined as a corner portion, the film thickness of the thermal spray film 6 shows High uniformity, but by connecting the downstream end portion and the surface of the electrode plate 32B on the processing space side with a curved surface, even at the downstream end portion of the gas discharge port 40, the film thickness of the spray film 6 can be increased. evenly.

Furthermore, when it becomes a corner, an abnormal discharge is generated due to the local concentration of the electric field, or the corner is cut off due to the influence of the abnormal discharge and becomes the main cause of particles. Bending, can suppress abnormal discharge or particle generation.

[Example]

In order to verify the effect of the embodiment of the present invention, by the method shown in the embodiment, the gas at the time of forming the spray film 6 in the gas supply part 3 related to the following Examples 1 to 3 and the comparative example was The film thickness distribution of the spray film 6 of the discharge port 40 was investigated.

[Example 1]

As shown in FIG. 2 , the inner diameter of the gas discharge port 40 is widened toward the downstream side, forming a mortar-shaped slope, and an angle is formed on the inner peripheral surface at the boundary between the gas discharge port 40 and the gas flow path 41 . In the form of a part, it is curved toward the outside, and the downstream end of the gas discharge port 40 is connected to the electrode plate by the curved surface. 300 below 32B. Furthermore, the angle θ1 formed by the straight line along the inner wall of the gas discharge port 40 and the axis L of the gas flow path 41 was set to 45°. In addition, the example in which the spray film 6 was formed by the spray film formation method shown in the embodiment using yttrium as the spray material 50 was taken as an example.

[Example 2]

When the gas discharge port 40 is viewed in a cross-section including the axis L, it is constituted by a slope which becomes only a straight portion 42 from the upstream end to the downstream end, and between the gas flow paths 41 at the upstream end of the gas discharge port 40 The boundary portion Pa, the downstream end portion of the gas discharge port 40, and the boundary portion Pb of the surface of the electrode plate 32B on the processing space side are constituted as a first corner portion and a second corner portion, respectively. In addition, an example having the same structure as that of Example 1 is used as Example 2, except that the angle θ2 formed by the inner wall of the gas discharge port 40 and the axis L is set to 45°.

[Example 3]

As shown in FIG. 8 , an example having the same structure as that of Example 2 was used as Example 3, except that the angle θ2 formed by the inner wall of the gas discharge port 40 and the axis L was 70°.

[Comparative example]

As shown in FIG. 9 , except for a curved portion 43 having a size of a radius of curvature of 1 mm from the upstream end to the downstream end when the gas discharge port 40 is viewed in a cross-section including the axis L of the gas flow path 41 , and other examples with the same structure as Example 1 were set as comparative examples.

About each of Examples 1-3 and the comparative example, the gas discharge port 40 formed in the gas supply part 3 was measured, and the film thickness of the spray film 6 was measured.

The measurement point of the film thickness of the spray film 6 in the gas discharge port 40 of each example is demonstrated. As shown in FIG. 10, first, when the gas discharge port 40 is viewed in a cross-section through the axis line L, a line extending from the boundary portion PA of the upstream end portion of the gas discharge port 40 in the direction perpendicular to the axis line L is determined, and the line extending from the gas discharge port 40 in the direction perpendicular to the axis L is determined. The boundary portion Pb of the downstream end portion of the outlet 40 is an intersection of lines extending in a direction parallel to the axis L. In addition, the points where the angles formed by the straight line connecting the intersection point and the surface of the spray film 6 and the line perpendicular to the axis L are respectively 90, 75, 60, 45, 30, 15 and 0° are set as points P1~ P7. The cross section of each sample of Examples 1 to 3 and the comparative example was photographed by SEM (scanning electron microscope), and the film thickness at each point was measured from the photograph.

The results are shown in Table 1, and the films of the sprayed films 6 in the respective locations P1 to P7 of Examples 1 to 3 and Comparative Examples are shown as values normalized by taking the film thickness of P1 in each example as 1 thick.

As shown in Table 1, in the comparative example, the film thickness of the thermal spray film 6 was 0.8 or more at the points P1 to P4, 0.7 at the point P5, and 0.7 at the point P5. P6 and P7 are 0.4 and 0.2, respectively, the film thickness becomes thinner.

In addition, in Examples 1-3, in each point P1-P6, the film thickness of the thermal spray film 6 shows 0.7 or more, and is a value which is slightly 0.8 or more. In addition, when Example 1 and Example 2 are compared, it turns out that the film thickness of Example 1 becomes thicker than Example 2 at point P2 and point P3.

From this result, it can be said that in the comparative example, the film thickness tends to be thin on the upstream side of the gas discharge port 40 , but the gas supply portion 3 of Examples 1 to 3 is a spray film covered with the gas discharge port 40 . The film thickness becomes uniform. Furthermore, it can be said that by setting the angle θ2 formed by the inner surface of the gas discharge port 40 and the axis L of the gas flow path 41 to 45° or more, the uniformity of the film thickness of the thermal spray film 6 is improved. In addition, it can be said that when the inclined surface of the gas discharge port 40 is viewed from the cross section including the axis of the gas flow path 41 , except for the straight portion 42 from the upstream end to the downstream side, the other is formed with a curved surface to the gas discharge port. The downstream side of the outlet 40 and one surface side of the electrode plate 32B, and accordingly, the uniformity of the film thickness of the spray film 6 in the vicinity of the downstream end of the gas discharge port 40 is further improved.

6: Spray film

30A: Hard oxide skin aluminum

32B: Electrode plate

40: Opening

41: Gas flow path

41a, 41b: flow path

42: Straight Parts

43: Curve part

300: Below

Claims (5)

A gas supply device comprising: an electrode member for generating plasma; a plurality of gas flow paths formed on the electrode member so as to extend toward one surface of the electrode member; and a gas discharge port , which is continuously formed at the downstream end of the above-mentioned gas flow path, and the aperture is enlarged toward the above-mentioned face; The boundary of the outlet is formed by bending the inner peripheral surface toward the outside to form a corner portion, and at the same time, the curved surface is formed from a portion of the inner peripheral surface located on the outer side of the corner portion to the surface of one surface side of the electrode member. When viewed in cross-section of the axis of the gas flow path, a straight line from the corner to the inner end of the curved surface, the straight line connecting the corner and the inner end of the curved surface, and the axis of the gas flow path are formed by The angle θ1 is set in the range of 45 degrees to 50 degrees. A gas supply device comprising: an electrode member for generating plasma; a plurality of gas flow paths formed on the electrode member so as to extend toward one surface of the electrode member; and a gas discharge port , which is continuously formed downstream of the above-mentioned gas flow path The end, the aperture is enlarged toward the above-mentioned side; and the protective film, which is formed on the surface of the above-mentioned gas discharge port by means of a thermal spray film, at the boundary between the above-mentioned gas flow path and the above-mentioned gas discharge port, the inner peripheral surface is bent to the outside to form a protective film. A corner portion is formed, and when viewed in a cross-section along the axis of the gas flow path, the inner peripheral surface from the corner portion to the outer end of the gas outlet is a straight line, which is formed by the straight line and the axis of the gas flow path. The angle θ2 is set in the range of 45 degrees to 70 degrees. A method of manufacturing a gas supply device, the gas supply device having a plurality of gas flow paths formed so as to extend toward one surface of an electrode member for generating plasma, and a plurality of gas flow paths formed continuously in the electrode member. The downstream end of each of the gas flow paths has a plurality of gas discharge ports open to the one surface, and the manufacturing method thereof is characterized by comprising: forming an inner peripheral surface of the gas flow path with an axis of the gas flow path. The process of setting the angle in the range of 45 degrees to 50 degrees to bend the corners toward the outside; forming the inner circumference which is continuous with the above-mentioned corners and becomes a straight line when viewed in cross-section along the axis of the above-mentioned gas flow path The process of forming the above-mentioned gas discharge port on the surface; the process of forming a curved surface at the above-mentioned opening of the above-mentioned gas discharge port, which is continuous from the inner peripheral surface that becomes the above-mentioned straight line to the surface of one surface side of the above-mentioned electrode member; toward the above-mentioned electrode member The above-mentioned gas discharge port is formed in the member One side, and the process of spraying the spraying material from the spraying part arranged at the position opposite to the one side; The process of moving in the direction to form a spray film. A method of manufacturing a gas supply device, the gas supply device having a plurality of gas flow paths formed so as to extend toward one surface of an electrode member for generating plasma, and a plurality of gas flow paths formed continuously in the electrode member. The downstream end of each of the gas flow paths has a plurality of gas discharge ports open to the one surface, and the manufacturing method thereof is characterized by comprising: forming an inner peripheral surface of the gas flow path with an axis of the gas flow path. The process of setting the angle in the range of 45 degrees to 70 degrees to bend the corners toward the outside; forming the inner circumference which is continuous with the above-mentioned corners and becomes a straight line when viewed in cross-section along the axis of the above-mentioned gas flow path The process of the above-mentioned gas discharge port on the surface; the process of spraying the spray material from the spray portion provided at a position opposite to the above-mentioned surface of the electrode member on which the above-mentioned gas discharge port is formed; and The process of forming a spray film is performed by moving the spray part in a direction orthogonal to the extending direction of the gas flow path while spraying the spray material. A plasma processing apparatus, characterized by comprising: a processing container for generating plasma therein; a mounting table for mounting the substrate arranged in the processing container; the gas supply device according to claim 1, which supplies a processing gas for plasma processing into the processing container; and a high-frequency power supply unit, which A high-frequency power is supplied between the above-mentioned mounting table and the electrode member; and an exhaust mechanism is used to evacuate the inside of the processing container.

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