TWI755449B - Support glass substrate and laminate using the same, semiconductor package, method for producing the same, and electronic device - Google Patents

Abstract

The supporting glass substrate of the present invention is used to support a processing substrate, and the supporting glass substrate is characterized in that, as a glass composition, 45% to 70% of SiO ₂ and more than 10.5% to 35% of Al ₂ O are contained in mass %. _3. 0%~20% B ₂ O ₃ , 5%~25% Na ₂ O, 0%~10% K ₂ O, 1%~10% MgO, and 0%~5% ZnO, And the crack resistance is 500gf or more.

Description

Support glass substrate and laminate and semiconductor package using the same body, method of making the same, and electronic machine

The present invention relates to a support glass substrate for supporting a processing substrate and a laminate using the same, and more specifically, to a support for supporting a processing substrate in a manufacturing step of a semiconductor package (semiconductor device). A glass substrate and a laminate using the same.

Portable electronic devices such as mobile phones, notebook personal computers, and personal digital assistants (PDAs) are required to be miniaturized and lightweight. Along with this, the mounting space of semiconductor chips (chips) used in these electronic devices is also severely restricted, and high-density mounting of semiconductor chips has become a problem. Therefore, in recent years, high-density mounting of semiconductor packages has been realized by three-dimensional mounting technology, that is, by laminating semiconductor wafers to each other and connecting the semiconductor wafers with wires.

In addition, the conventional Wafer Level Package (WLP) is fabricated by forming bumps in the state of wafers, and then singulation by dicing. However, in the conventional WLP, it is difficult to increase the number of pins, and in addition to that, the semiconductor wafer is mounted in a state where the back surface of the semiconductor wafer is exposed, so there is a problem that the semiconductor wafer is easily damaged.

Therefore, as a new WLP, a fan out type WLP is proposed. The fan-out type WLP can increase the number of pins, and by protecting the end of the semiconductor chip, it can prevent chipping of the semiconductor chip, etc.

The manufacturing steps of the fan-out WLP include, for example, the steps of arranging a plurality of semiconductor wafers on a supporting glass substrate, molding with a resin sealing material to form a processing substrate, and performing wiring on one surface of the processing substrate; and Steps of forming solder bumps, etc.

In addition, in the manufacturing process of a fan-out WLP, the laminated body which consists of a process board|substrate and a support glass substrate is conveyed in the horizontal direction in the state in which the support glass substrate side was in contact with the conveyance conveyor. Moreover, it conveys in the state which hold|grip and support the edge part of a glass substrate by a robot arm or the like.

However, the support glass substrate is liable to receive mechanical shock from a conveyance conveyor or a robot arm at the time of conveyance of the laminate. Moreover, when a support glass substrate receives a mechanical impact, a crack may generate|occur|produce in a support glass substrate, and a support glass substrate may be damaged from the said crack as a starting point.

The present invention was made in view of the above-mentioned circumstances, and its technical subject is to create a supporting glass substrate in which cracks are less likely to occur at the time of conveyance of the laminate in the production process of the fan-out WLP.

The inventors have repeatedly carried out various experiments, and found that, by selecting alkali aluminosilicate glass as the supporting glass substrate, and strictly limiting the glass composition range of the alkali aluminosilicate glass, and increasing the crack resistance, the problem can be solved. The present invention has been proposed in order to solve the technical problem. That is, the supporting glass substrate of the present invention is used to support a processing substrate, and the supporting glass substrate is characterized in that, as a glass composition, 45% to 70% of SiO ₂ and more than 10.5% to 35% of Al are contained in mass %. ₂ O ₃ , 0%~20% B ₂ O ₃ , 5%~25% Na ₂ O, 0%~10% K ₂ O, 1%~10% MgO, and 0%~5% ZnO, and the crack resistance is 500 gf or more. Here, "crack resistance" refers to a load with a crack occurrence rate of 50%. "Crack occurrence rate" means the value measured as follows. First, in a constant temperature and humidity tank maintained at a humidity of 30% and a temperature of 25°C, a Vickers indenter set to a predetermined load was driven into the glass surface (optical polishing surface) for 15 seconds, and after the 15 seconds The number of cracks generated at the four corners of the indentation was counted (a maximum of 4 indentations was set). In this way, the indenter was driven 20 times, and after obtaining the total number of cracks, it was obtained by the formula of (total number of cracks/80)×100. As a measuring device for crack resistance, for example, a multi Vickers hardness tester FLC-50VX manufactured by Future Tech can be used.

Second, the supporting glass substrate of the present invention is preferably composed of glass, and contains 50%-67% SiO ₂ , 19.7%-33% Al ₂ O ₃ , and 0%-15% B ₂ O in mass %. _3. 5%~20% Na ₂ O, 0%~3% K ₂ O, 1%~5.5% MgO, and 0%~3% ZnO, and the crack resistance is more than 700gf.

Third, the supporting glass substrate of the present invention preferably has an average linear thermal expansion coefficient in a temperature range of 20°C to 220°C of 40×10 ^-7 /°C or more and 120×10 ^-7 /°C or less. Thereby, when changing the ratio of a semiconductor wafer and a sealing material in a process board|substrate, it becomes easy to closely match the linear thermal expansion coefficient of a process board|substrate and a support glass substrate. Furthermore, when the linear thermal expansion coefficients of the two are matched, it is easy to suppress dimensional changes (especially warpage deformation) of the processed substrate during processing. As a result, high-density wiring can be performed on one surface of the processed substrate, and solder bumps can also be accurately formed. Here, "the average linear thermal expansion coefficient in the temperature range of 20 degreeC - 220 degreeC" can be measured with a dilatometer.

Fourth, the supporting glass substrate of the present invention preferably has an average linear thermal expansion coefficient in a temperature range of 20°C to 260°C of 40×10 ⁻⁷ /°C or more and 120×10 ⁻⁷ /°C or less. Here, the "average coefficient of linear thermal expansion in the temperature range of 20°C to 260°C" can be measured with a dilatometer.

Fifth, the supporting glass substrate of the present invention preferably has an average linear thermal expansion coefficient in a temperature range of 30°C to 380°C of 42×10 ⁻⁷ /°C or more and 125×10 ⁻⁷ /°C or less. Here, "the average coefficient of linear thermal expansion in the temperature range of 30°C to 380°C" can be measured with a dilatometer.

Sixth, the supporting glass substrate of the present invention preferably has a wafer shape with a diameter of 100 mm to 500 mm or a roughly circular plate shape, a thickness of less than 2.0 mm, a Total Thickness Variation (TTV) of less than 5 μm, and a warped shape. The amount of curvature is 60 μm or less. Here, the "warpage amount" refers to the total of the absolute value of the maximum distance between the highest point and the least square focal plane in the entire supporting glass substrate, and the absolute value of the lowest point and the least square focal plane, and may be, for example, The measurement was performed with a Bow/Warp measuring device SBW-331M/Ld manufactured by KOBELCO Scientific Corporation.

Seventh, the laminated body of the present invention preferably includes at least a processing substrate and a supporting glass substrate for supporting the processing substrate, and the supporting glass substrate is the supporting glass substrate.

Eighthly, in the layered product of the present invention, it is preferable that the processing substrate includes at least a semiconductor wafer formed by a sealing material.

Ninth, the method for manufacturing a semiconductor package of the present invention preferably includes: a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate; and a step of processing the processed substrate, and supporting The glass substrate is the supporting glass substrate.

Tenth, in the manufacturing method of the semiconductor package of the present invention, it is preferable that the processing includes the step of wiring on one surface of the processing substrate.

Eleventh, in the manufacturing method of the semiconductor package of the present invention, preferably, the processing includes the step of forming solder bumps on a surface of the processing substrate.

Twelfth, the semiconductor package of the present invention is preferably fabricated by using the manufacturing method of the semiconductor package.

Thirteenth, the electronic apparatus of the present invention preferably includes a semiconductor package, and the semiconductor package is the semiconductor package.

1, 27: Laminate

10, 26, 31, 35: Supporting glass substrate

11, 24: Processing substrate

12: Peel layer

13, 21, 25: Next layer

20: Support member

22: Semiconductor wafer

23: Sealing material

28: Wiring

29: Solder bumps

32, 36: Notches

33, 37: External appearance

34, 38: Deep part of the notch

39, 40: Supporting the surface of the glass substrate

41: Supporting the end face of the glass substrate

42, 43: The chamfered surface of the supporting glass substrate

X, Y+Y': chamfer width

t: plate thickness

FIG. 1 is a conceptual perspective view showing an example of the laminate of the present invention.

FIGS. 2( a ) to 2 ( g ) are conceptual cross-sectional views showing manufacturing steps of the fan-out WLP.

FIG.3(a), FIG.3(b) is an upper conceptual diagram which shows an example of the support glass substrate of this invention.

Fig. 4 is a conceptual cross-sectional view taken in the AA' direction of Fig. 3(a).

The supporting glass substrate of the present invention is characterized in that, as a glass composition, 45% to 70% of SiO ₂ , more than 10.5% to 35% of Al ₂ O ₃ , and 0% to 20% of B ₂ O ₃ are contained in mass %. , 5%~25% Na ₂ O, 0%~10% K ₂ O, 1%~10% MgO, and 0%~5% ZnO. The reason for limiting the content of each component as described above is shown below. In addition, in the description of the content of each component, % expression means mass %.

SiO ₂ is the main component that forms the skeleton of glass. When the content of SiO ₂ is too small, the Young's modulus and acid resistance tend to decrease. However, when the content of SiO ₂ is too large, the high-temperature viscosity increases, and the meltability and formability tend to decrease. In addition, devitrification crystals such as cristobalite tend to precipitate, and the liquidus temperature tends to rise. Therefore, the lower limit range of SiO ₂ is 45% or more, preferably 47% or more, especially 49% or more, and the upper limit range is 70% or less, preferably 68% or less, 66% or less, especially 65% or less. When giving priority to meltability, it is 64% or less, 63% or less, especially 62% or less.

Al ₂ O ₃ is a component that improves crack resistance. Furthermore, it is a component that suppresses phase separation and devitrification. However, when the content of Al ₂ O ₃ is too large, the high temperature viscosity increases, and the meltability and formability tend to decrease. Therefore, the lower limit range of Al ₂ O ₃ exceeds 10.5%, preferably 11% or more, 13% or more, 15% or more, 17% or more, especially 19.7% or more, and the upper limit range is 35% or less, preferably 30% Hereinafter, when giving priority to meltability and formability, it is 25% or less, especially 20% or less.

B ₂ O ₃ is a component that improves meltability and devitrification resistance, and is a component that improves crack resistance. However, when the content of B ₂ O ₃ is too large, the Young's modulus and acid resistance tend to decrease. Therefore, the lower limit range of B ₂ O ₃ is 0% or more, preferably 1% or more, 2% or more, 3% or more, especially 4% or more, and the upper limit range is 20% or less, preferably 15% or less, 13% or more % or less, 11% or less, especially 9% or less.

Na ₂ O is an important component for adjusting the coefficient of linear thermal expansion, and is a component that contributes to the initial melting of glass raw materials. However, when the content of Na ₂ O is too large, the linear thermal expansion coefficient may increase unreasonably. Therefore, the lower limit range of Na ₂ O is 5% or more, preferably 6% or more, 7% or more, 8% or more, especially 9% or more, and the upper limit range is 25% or less, preferably 23% or less, 21% below, especially below 18%.

K ₂ O is a component for adjusting the coefficient of linear thermal expansion, and is a component that contributes to the initial melting of the glass raw material. However, when the content of K ₂ O is too large, the linear thermal expansion coefficient may increase unreasonably. Therefore, the content of K ₂ O is 0% to 10%, preferably 0% to 6%, 0% to 5%, 0.1% to 1.9%, especially 0.2% to less than 1%.

MgO is a component that improves crack resistance. In addition, it is a component that reduces high temperature viscosity and improves meltability, and is a component that significantly increases Young's modulus among alkaline earth metal oxides. However, when the content of MgO increases, the devitrification resistance tends to decrease. Therefore, the content of MgO is 1% to 10%, preferably 1% to 6%, 1% to 5.5%, 2% to 5%, especially 3% to less than 4%.

The mass ratio (Al ₂ O ₃ +B ₂ O ₃ +MgO)/(Na ₂ O+K ₂ O) is preferably 1.3 or more, 1.5 or more, 2.0 or more, 2.5 or more, especially 3.0 or more. When the mass ratio (Al ₂ O ₃ +B ₂ O ₃ +MgO)/(Na ₂ O+K ₂ O) is too small, crack resistance decreases or damage is likely to occur, and the supporting glass substrate is likely to be damaged by cracks.

ZnO is a component that reduces high-temperature viscosity to remarkably improve meltability and formability, and is a component that improves weather resistance. However, when the content of ZnO is too large, the glass tends to devitrify. Therefore, the content of ZnO is 0% to 5%, preferably 0% to 4%, 0.1% to 2%, especially 0.3% to 1.5%.

In addition to the above-mentioned components, other components may be introduced as optional components. Furthermore, from the viewpoint of actually enjoying the effects of the present invention, the content of other components other than the above-mentioned components is preferably 25% or less, 20% or less, 15% or less, 10% or less, especially 5% in total. %the following.

Li ₂ O is a component that reduces high-temperature viscosity and remarkably improves meltability and formability. And it is a component which raises Young's modulus. However, when the content of Li ₂ O is too large, the glass tends to devitrify. Therefore, the content of Li ₂ O is preferably 0% to 7%, 0% to 3%, 0% to 1%, especially 0.01% to 0.1%.

CaO is a component that reduces high temperature viscosity and remarkably improves meltability and formability. In addition, it is a component of the alkaline earth metal oxide that reduces the cost of the raw material because the raw material to be introduced is relatively inexpensive. However, when the content of CaO is too large, the glass tends to devitrify. Therefore, the content of CaO is preferably 0% to 10%, 1% to 8%, 3% to 8%, 2% to 6%, especially 2% to 5%.

SrO is a component which suppresses phase separation, and is a component which improves devitrification resistance. However, when the content of SrO is too large, the glass tends to devitrify. Therefore, the content of SrO is preferably 0%~20%, 0%~15%, 0%~9%, 0%~5%, 0%~4%, 0%~3%, 0%~2%, Especially 0% to less than 1%. In addition, when giving priority to the improvement of devitrification resistance, the preferable lower limit range of SrO is 0.1% or more, 1% or more, More than 2%, more than 4%, especially more than 7%.

BaO is a component which improves devitrification resistance. However, when the content of BaO is too large, the glass tends to devitrify. Therefore, the content of BaO is preferably 0%~20%, 0%~14%, 0%~9%, 0%~5%, 0%~4%, 0%~3%, 0%~2%, Especially 0% to less than 1%. In addition, when giving priority to improvement of devitrification resistance, the preferable lower limit range of BaO is 0.1% or more, 1% or more, and especially 3% or more.

Fe ₂ O ₃ is a component that can be introduced as an impurity component or a clarifying agent component. However, when there is too much content _{of Fe2O3} , there exists a possibility that an ultraviolet-ray transmittance may fall. That is, when the content of Fe ₂ O ₃ is too large, it may be difficult to appropriately adhere and desorb the processed substrate and the supporting glass substrate via the resin layer and the peeling layer. Therefore, the content of Fe ₂ O ₃ is preferably 0.05% or less, 0.03% or less, 0.001% to 0.02%, especially 0.005% to 0.01%. In addition, " _Fe2O3 " mentioned in this invention contains bivalent iron oxide and _trivalent iron oxide, and bivalent iron _oxide is converted into _Fe2O3 , and is processed. Regarding other oxides, the same treatment is performed on the basis of the stated oxides.

As a clarifying agent, As ₂ O ₃ functions effectively, and it is preferable to reduce these components as much as possible from the viewpoint of the environment. The content of As ₂ O ₃ is preferably not more than 1%, not more than 0.5%, especially not more than 0.1%, and desirably not substantially contained. Here, "substantially not containing As ₂ O ₃ " means that the content of As ₂ O ₃ in the glass composition is less than 0.05%.

Sb ₂ O ₃ is a component having a good clarifying effect in a low temperature region. The content of Sb ₂ O ₃ is preferably 0% to 1%, 0.001% to 1%, 0.01% to 0.9%, especially 0.05% to 0.7%. When the content of Sb ₂ O ₃ is too large, the glass tends to be colored.

SnO ₂ is a component which has a favorable clarifying effect in a high temperature region, and is a component which reduces high temperature viscosity. The content of SnO ₂ is preferably 0% to 1%, 0.001% to 1%, 0.01% to 0.9%, especially 0.05% to 0.7%. When the content of SnO ₂ is too large, devitrification crystals of SnO ₂ are likely to be precipitated. Furthermore, when the content of SnO ₂ is too small, it is difficult to obtain the above-mentioned effects.

SO ₃ is a clarifying ingredient. The content of SO ₃ is preferably 0% to 1%, 0.001% to 1%, 0.01% to 0.5%, especially 0.05% to 0.3%. When the content of SO ₃ is too large, SO ₂ reboil is likely to occur.

Furthermore, as long as the glass properties are not impaired, metal powders such as F, C, or Al, Si, etc., may be respectively introduced to about 1% as a clarifying agent. In addition, CeO ₂ can also be introduced into about 1%, but it is necessary to pay attention to the decrease of ultraviolet transmittance.

Cl is a component that promotes melting of glass. When Cl is introduced into the glass composition, the lowering of the melting temperature and the promotion of the clarification effect can be achieved, and as a result, the reduction of the melting cost and the prolongation of the life of the glass manufacturing furnace can be easily achieved. However, when there is too much content of Cl, there exists a possibility of corroding metal parts around a glass manufacturing furnace. Therefore, the content of Cl is preferably 3% or less, 1% or less, 0.5% or less, especially 0.1% or less.

P ₂ O ₅ is a component that suppresses precipitation of devitrified crystals. However, when a large amount of P ₂ O ₅ is introduced, the glass tends to be phase-separated. Therefore, the content of P ₂ O ₅ is preferably 0% to 15%, 0% to 2.5%, 0% to 1.5%, 0% to 0.5%, especially 0.1% to 0.3%.

TiO ₂ is a component that reduces high-temperature viscosity and improves meltability, and is a component that suppresses solarization. However, when a large amount of TiO ₂ is introduced, the glass is colored and the transmittance tends to decrease. Therefore, the content of TiO ₂ is preferably 0% to 5%, 0% to 3%, 0% to 1%, especially 0% to 0.02%.

ZrO ₂ is a component that improves chemical resistance and Young's modulus. However, when a large amount of ZrO ₂ is introduced, the glass is easily devitrified, and the introduction raw material is refractory, so there is a possibility that undissolved crystalline foreign matter is mixed into the product substrate. Therefore, the content of ZrO ₂ is preferably 0%~10%, 0%~7%, 0%~5%, 0.001%~3%, 0.01%~1%, especially 0.1%~0.5%.

Y ₂ O ₃ , Nb ₂ O ₅ , and La ₂ O ₃ have the effect of increasing the strain point, Young's modulus, and the like. However, when the content of these components is respectively 5%, especially more than 1%, the cost of raw materials and the cost of products may increase.

The supporting glass substrate of the present invention preferably has the following characteristics.

The crack resistance is 500 gf or more, preferably 600 gf or more, 700 gf or more, 800 gf or more, 900 gf or more, especially 1000 gf or more. When the crack resistance is low, the supporting glass substrate is likely to be damaged due to a mechanical impact from a conveying conveyor or a robot arm in the manufacturing process of the fan-out WLP.

The average linear thermal expansion coefficient in the temperature range of 20°C to 220°C is preferably 40×10 ^-7 /°C or more and 120×10 ^-7 /°C or less, more preferably more than 50×10 ^-7 /°C or more and 110× 10 ^-7 /°C or lower, more preferably 60×10 ^-7 /°C or higher and 100×10 ^-7 /°C or lower, particularly preferably 70×10 ^-7 /°C or higher and 95×10 ^-7 /°C or lower. If the average coefficient of linear thermal expansion in the temperature range of 20° C. to 220° C. is outside the range, it is difficult to match the coefficient of linear thermal expansion of the processing substrate and the supporting glass substrate. Furthermore, if the linear thermal expansion coefficients of the two do not match, dimensional changes (especially warpage deformation) of the processed substrate are likely to occur during processing.

The average linear thermal expansion coefficient in the temperature range of 20°C to 260°C is preferably 40×10 ^-7 /°C or more and 120×10 ^-7 /°C or less, more preferably more than 50×10 ^-7 /°C and 110×10 ^-7 /°C or lower, more preferably 60×10 ^-7 /°C or higher and 100×10 ^-7 /°C or lower, particularly preferably 70×10 ^-7 /°C or higher and 95×10 ^-7 /°C or lower. When the average coefficient of linear thermal expansion in the temperature range of 20° C. to 260° C. is outside the range, it is difficult to match the coefficient of linear thermal expansion of the processing substrate and the supporting glass substrate. Furthermore, if the linear thermal expansion coefficients of the two do not match, dimensional changes (especially warpage deformation) of the processed substrate are likely to occur during processing.

The average linear thermal expansion coefficient in the temperature range of 30°C to 380°C is preferably 42×10 ^-7 /°C or more and 125×10 ^-7 /°C or less, more preferably more than 50×10 ^-7 /°C and 110×10 ^-7 /°C or lower, more preferably 60×10 ^-7 /°C or higher and 100×10 ^-7 /°C or lower, particularly preferably 70×10 ^-7 /°C or higher and 95×10 ^-7 /°C or lower. If the average coefficient of linear thermal expansion in the temperature range of 30° C. to 380° C. is outside the range, it is difficult to match the coefficient of linear thermal expansion of the processing substrate and the supporting glass substrate. Furthermore, if the linear thermal expansion coefficients of the two do not match, dimensional changes (especially warpage deformation) of the processed substrate are likely to occur during processing.

10 ^2.5 dpa. The temperature at s is preferably 1680°C or lower, 1620°C or lower, 1580°C or lower, 1550°C or lower, 1520°C or lower, particularly 1500°C or lower. If 10 ^2.5 dPa. When the temperature in s becomes high, the meltability decreases, and the manufacturing cost of the glass substrate increases. Here, the "temperature at 10 ^2.5 dPa·s" can be measured by the platinum ball pulling method. Furthermore, 10 ^2.5 dPa. The temperature at s corresponds to the melting temperature, and the lower the temperature, the higher the meltability.

The liquidus temperature is preferably lower than 1300°C, 1200°C or lower, 1100°C or lower, 1050°C or lower, 1000°C or lower, particularly 950°C or lower. The viscosity at the liquidus temperature is preferably 10000dPa. s above, 30000dPa. s above, 60000dPa. s above, 100000dPa. s above, 200000dPa. s above, 300000dPa. s above, 500000dPa. s above, 800000dPa. s above, especially 1000000dPa. s or more. In this way, since devitrification crystals are difficult to precipitate during molding, it is easy to shape the glass substrate by the down-draw method, especially the overflow down-draw method. Here, the "liquidus temperature" can be measured by placing the glass powder that has passed through a standard sieve of 30 mesh (500 μm) and remained on a 50 mesh (300 μm) into a platinum boat, kept it in a temperature gradient furnace for 24 hours, and measured the crystal precipitation temperature is calculated. "Viscosity at liquidus temperature" can be measured by the platinum ball pulling method. Furthermore, the viscosity at the liquidus temperature is an index of the formability, and the higher the viscosity at the liquidus temperature, the higher the formability.

In the supporting glass substrate of the present invention, the Young's modulus is preferably 65GPa or more, 68GPa or more, 70GPa or more, 72GPa or more, 73GPa or more, especially 74GPa or more. When the Young's modulus is too low, it is difficult to maintain the rigidity of the laminate, and deformation, warpage, breakage, and the like of the processed substrate are likely to occur. Here, "Young's modulus" refers to a value measured by a bending resonance method.

The supporting glass substrate of the present invention preferably has the following shapes.

The supporting glass substrate of the present invention is preferably substantially disc-shaped or wafer-shaped, and its diameter is preferably 100 mm or more and 500 mm or less, particularly 150 mm or more and 450 mm or less. In this way, it is easy to apply to the manufacturing steps of the fan-out WLP. can also If necessary, it may be processed into other shapes, such as rectangular shapes.

The roundness is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, especially 0.03 mm or less. The smaller the roundness, the easier it is to apply to the manufacturing steps of the fan-out WLP. In addition, "roundness" is the value obtained by subtracting the minimum value from the maximum value of the outer shape of a wafer except a notch part.

The plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, especially 0.9 mm or less. The thinner the plate thickness is, the lighter the mass of the layered product is, and the workability is improved. On the other hand, when the plate thickness is too thin, the strength of the supporting glass substrate itself decreases, and it becomes difficult to function as a supporting substrate. Therefore, the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, and especially more than 0.7 mm.

The overall thickness variation (TTV) is preferably 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, especially 0.1 μm to less than 1 μm. In addition, the arithmetic mean roughness Ra is preferably 20 nm or less, 10 nm or less, 5 nm or less, 2 nm or less, 1 nm or less, especially 0.5 nm or less. The higher the surface accuracy, the easier it is to improve the accuracy of the machining process. In particular, since wiring accuracy can be improved, high-density wiring can be performed. Moreover, the intensity|strength of a support glass substrate improves, and a support glass substrate and a laminated body are hard to be damaged. Furthermore, the number of times of reuse of the supporting glass substrate can be increased. In addition, the "arithmetic mean roughness Ra" can be measured by a stylus surface roughness meter or an atomic force microscope (AFM).

The supporting glass substrate of the present invention is preferably formed by an overflow down-draw method, and then the surface thereof is ground. In this way, it is easy to adjust the overall thickness deviation (TTV) It is limited to less than 2.0 μm, 1.5 μm or less, 1.0 μm or less, especially 0.1 μm to less than 1.0 μm.

The warpage amount is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 μm to 45 μm, especially 5 μm to 40 μm. The smaller the amount of warpage, the easier it is to improve the accuracy of processing. In particular, since wiring accuracy can be improved, high-density wiring can be performed.

The supporting glass substrate of the present invention preferably has a notch portion (a notch-shaped alignment portion), and the depth of the notch portion is more preferably a substantially circular shape or a substantially V-groove shape in plan view. Thereby, positioning members, such as a positioning pin, are contact|abutted to the notch part of a support glass substrate, and it becomes easy to fix a position of a support glass substrate. As a result, alignment of the supporting glass substrate and the processing substrate becomes easy. In particular, if a notch portion is also formed in the processing substrate and the positioning member is brought into contact with each other, the alignment of the entire laminate will be facilitated. In addition, since the notch part is in contact with the positioning member, cracks are likely to occur, but the supporting glass substrate of the present invention is particularly effective when it has the notch part because of its high crack resistance.

When the positioning member is brought into contact with the notch portion of the supporting glass substrate, stress tends to concentrate on the notch portion, and the supporting glass substrate is likely to be damaged from the notch portion as a starting point. In particular, when the supporting glass substrate is bent by an external force, the tendency becomes remarkable. Therefore, in the supporting glass substrate of the present invention, it is preferable that all or a part of the edge region where the surface of the notch portion intersects with the end surface is chamfered. Thereby, the breakage from the notch part as a starting point can be avoided effectively.

All or part of the edge region where the surface of the notch portion of the supporting glass substrate of the present invention intersects with the end face is chamfered, preferably more than 50% of the edge region where the surface of the notch portion intersects with the end face is chamfered, More preferably, the surface of the notch part intersects the end surface 90% or more of the poor edge region is chamfered, and it is more preferable that the entire edge region where the surface of the notch portion intersects with the end surface is chamfered. The larger the chamfered region in the notch portion, the more likely it is possible to reduce the probability of breakage starting from the notch portion.

The chamfer width in the surface direction of the notch portion is preferably 50 μm to 900 μm, 200 μm to 800 μm, 300 μm to 700 μm, 400 μm to 650 μm, especially 500 μm to 600 μm. When the chamfering width of the surface direction of a notch part is too small, a support glass substrate is easily damaged from a notch part as a starting point. On the other hand, when the chamfering width of the surface direction of a notch part is too large, the chamfering efficiency falls, and the manufacturing cost of a support glass substrate tends to increase.

The chamfer width in the plate thickness direction of the notch portion is preferably 5% to 80%, 20% to 75%, 30% to 70%, 35% to 65%, especially 40% to 60% of the plate thickness. When the chamfer width in the plate thickness direction of the notch portion is too small, the support glass substrate is likely to be damaged from the notch portion as a starting point. On the other hand, if the chamfer width in the thickness direction of the notch is too large, external force tends to concentrate on the end face of the notch, and the support glass substrate is likely to be damaged from the end face of the notch as a starting point.

The supporting glass substrate of the present invention is preferably formed (marked) on the surface with an information identification portion (mark) having a two-dimensional code. In this way, it is possible to manage and recognize the production information of the supporting glass substrate, etc. (for example, the size of the glass substrate, the coefficient of linear thermal expansion, the batch, the deviation of the overall thickness, the name of the manufacturer, the name of the seller). In addition, the information identification part is normally formed in the peripheral area of a support glass substrate, and is recognized by a human eye nitrile etc. in the form of a character, a symbol, etc. Alternatively, sometimes the information identification part supporting the glass substrate is also equipped with a Charge Coupled Device (CCD) camera. and other optical components to automatically identify.

The information identification portion can be formed by various methods, but in the present invention, it is preferable to irradiate a pulse wave laser and ablate the glass in the irradiated area to form the information identification portion, that is, to form the information identification portion by laser ablation. In this way, it is possible to prevent the occurrence of erosion due to excessive heat accumulation in the glass in the irradiation area. As a result, not only the length of the crack in the thickness direction but also the length of the crack in the surface direction extending from the point can be reduced. Furthermore, the supporting glass substrate of the present invention has the following advantages: since the crack resistance is high, when the information identification portion (especially the dot) is formed by laser ablation, cracks are not easily generated.

The information identification portion preferably includes a plurality of points. The outer diameter of the dots is preferably 0.05mm to 0.20mm, 0.07mm to 0.13mm, especially 0.09mm to 0.11mm. When the outer diameter of the dots is too small, the visibility of the information recognition portion tends to decrease. On the other hand, when the outer diameter dimension of a dot is too large, it will become difficult to ensure the intensity|strength of a support glass substrate.

The distance between the centers of the points adjacent to each other is preferably 0.06 mm to 0.25 mm. If the distance between the centers of the points adjacent to each other is too small, it is difficult to ensure the strength of the supporting glass substrate. On the other hand, if the distance between the centers of the points adjacent to each other is too large, the visibility of the information recognition unit tends to decrease.

The shape of the dot is preferably an annular groove. In this way, if the dots are formed as annular grooves, the regions surrounded by the annular grooves (regions on the inner side of the grooves) are not removed by the laser and remain, so it is possible to prevent as much as possible. The intensity of the area where the information recognition unit is provided decreases. In addition, if the groove is an annular groove, as long as the outer diameter does not change, even if the width of the groove is reduced, the visibility will not decrease so much. Spend. Therefore, if the width dimension is reduced without changing the outer diameter dimension of the groove, a correspondingly large volume of the region inside the groove can be obtained, whereby visibility and required strength can be ensured.

The depth dimension of the groove in which the dots are formed is preferably 2 μm to 30 μm. When the depth dimension of the groove is too small, the visibility of the information identification portion tends to decrease. On the other hand, when the depth dimension of a groove|channel is too large, it becomes difficult to ensure the intensity|strength which supports a glass substrate.

The supporting glass substrate of the present invention is preferably formed by a down-draw method, especially an overflow down-draw method. The overflow down-draw method is a method in which molten glass overflows from both sides of a heat-resistant launder-shaped structure, and the overflowed molten glass merges at the lower end of the launder-shaped structure while extending and molding downward. Manufacture of glass substrates. In the overflow down-draw method, the surface that should be the surface of the glass substrate is not in contact with the launder-shaped refractory, but is formed in the state of a free surface. Therefore, with a small amount of grinding, the overall thickness variation (TTV) can be reduced to less than 2.0 μm, especially less than 1.0 μm. As a result, the manufacturing cost of a glass substrate can be reduced.

The supporting glass substrate of the present invention preferably does not undergo ion exchange treatment, and preferably does not have a compressive stress layer on the surface. If the ion exchange treatment is performed, the production cost of the supporting glass substrate will increase, but if the ion exchange treatment is not performed, the production cost of the supporting glass substrate can be reduced. Furthermore, if the ion exchange treatment is performed, it is difficult to reduce the overall thickness variation (TTV) of the supporting glass substrate, but if the ion exchange treatment is not performed, the above-mentioned inconvenience can be easily resolved. In addition, the supporting glass substrate of the present invention does not exclude the form in which a compressive stress layer is formed on the surface by performing an ion exchange treatment. From the viewpoint of merely improving the mechanical strength, it is preferable to perform ion exchange treatment and A compressive stress layer is formed on the surface.

The laminate of the present invention includes at least a processing substrate and a supporting glass substrate for supporting the processing substrate, and the laminate is characterized in that the supporting glass substrate is the supporting glass substrate. The laminate of the present invention preferably has an adhesive layer between the processing substrate and the supporting glass substrate. The next layer is preferably a resin, and preferably, for example, a thermosetting resin, a photocurable resin (especially an ultraviolet curing resin), or the like. In addition, it is preferable to have heat resistance capable of withstanding the heat treatment in the manufacturing step of the fan-out WLP. This makes it difficult for the adhesive layer to be melted in the manufacturing step of the fan-out WLP, so that the precision of the processing can be improved. Furthermore, since it is easy to fix a process board|substrate and a support glass substrate, an ultraviolet curable adhesive tape can also be used as an adhesive layer.

The layered product of the present invention preferably further has a release layer between the processing substrate and the supporting glass substrate, more specifically, a release layer between the processing substrate and the adhesive layer, or a release layer between the supporting glass substrate and the adhesive layer. After the predetermined processing is performed on the processing substrate in this way, the processing substrate is easily peeled off from the supporting glass substrate. From the viewpoint of productivity, peeling of the processed substrate is preferably performed by irradiating light with laser light or the like. As the laser light source, an infrared laser light source such as a Yttrium Aluminium Garnet (YAG) laser (wavelength of 1064 nm) and a semiconductor laser (wavelength of 780 nm to 1300 nm) can be used. Moreover, the resin decomposed|disassembled by irradiation of an infrared laser can be used for a peeling layer. In addition, a substance that absorbs infrared rays efficiently and is converted into heat may be added to the resin. For example, carbon black, graphite powder, fine particle metal powder, dye, pigment, etc. may also be added to the resin.

The peeling layer includes "in-layer peeling" by irradiating light such as laser light or "Interface peel" material. That is, it includes materials in which, when irradiated with light of a certain intensity, the bonding force between atoms or molecules between atoms or molecules disappears or decreases, and ablation or the like occurs, thereby causing exfoliation. Furthermore, by irradiation of irradiation light, the components contained in the peeling layer may become gas and be released to cause separation, and the separation layer may absorb light and become gas and release its vapor to cause separation.

In the layered product of the present invention, the supporting glass substrate is preferably larger than the processing substrate. This makes it difficult for the edge portion of the processing substrate to protrude beyond the supporting glass substrate even when the center positions of the two are slightly separated when the processing substrate and the supporting glass substrate are supported.

The manufacturing method of the semiconductor package of the present invention is characterized by comprising: preparing a laminate including at least a processing substrate and a supporting glass substrate for supporting the processing substrate; and processing the processing substrate; and the supporting glass substrate is the supporting glass substrate.

It is preferable that the manufacturing method of the semiconductor package of this invention further includes the process of conveying a laminated body. Thereby, the processing efficiency of a processing can be improved. In addition, "the step of conveying the laminated body" and the "step of processing the processing substrate" need not be performed separately, and may be performed simultaneously.

In the manufacturing method of the semiconductor package of the present invention, the processing is preferably a process of performing wiring on one surface of the processed substrate or a process of forming solder bumps on one surface of the processed substrate. In the manufacturing method of the semiconductor package of the present invention, the dimensions of the processed substrate are not easily changed during these processes, and therefore these steps can be appropriately performed.

In addition to the above, the processing may be any of the following treatments One: One surface of the processing substrate (usually the surface opposite to the supporting glass substrate) is mechanically ground, and one surface of the processing substrate (usually the surface opposite to the supporting glass substrate) is dry-etched Treatment is a treatment of performing wet etching on one surface (usually the surface opposite to the support glass substrate) of the processing substrate. Furthermore, in the manufacturing method of the semiconductor package of this invention, a warpage is hard to generate|occur|produce in a process board|substrate, and the rigidity of a laminated body can be maintained. As a result, the processing can be appropriately performed.

The present invention will be further described with reference to the drawings.

FIG. 1 is a conceptual perspective view showing an example of the layered body 1 of the present invention. In FIG. 1 , the laminate 1 includes a supporting glass substrate 10 and a processing substrate 11 . The supporting glass substrate 10 is attached to the processing substrate 11 in order to prevent the dimensional change of the processing substrate 11 . The peeling layer 12 and the adhesive layer 13 are arranged between the supporting glass substrate 10 and the processing substrate 11 . The peeling layer 12 is in contact with the supporting glass substrate 10 , and the subsequent layer 13 is in contact with the processing substrate 11 .

That is, the laminated body 1 is laminated|stacked and arrange|positioned in this order of the support glass substrate 10, the peeling layer 12, the adhesive layer 13, and the process board|substrate 11. The shape of the supporting glass substrate 10 is determined according to the processing substrate 11 . In FIG. 1 , the shapes of the supporting glass substrate 10 and the processing substrate 11 are both substantially disc shapes. For the peeling layer 12, a resin decomposed by laser irradiation can be used, for example. In addition, a substance that efficiently absorbs laser light and converts it into heat may be added to the resin. For example, carbon black, graphite powder, particulate metal powder, dyes, pigments and the like. The peeling layer 12 is formed by plasma chemical vapor deposition (CVD), spin coating by a sol-gel method, or the like. Then layer 13 includes The resin is formed by coating, for example, by various printing methods, ink jet methods, spin coating methods, roll coating methods, and the like. In addition, an ultraviolet curable adhesive tape can also be used. After the support glass substrate 10 is peeled off from the processing substrate 11 by the peeling layer 12, the layer 13 is dissolved and removed by a solvent or the like. The UV-curable tape can be removed by a peeling tape after irradiating with UV light.

FIGS. 2( a ) to 2 ( g ) are conceptual cross-sectional views showing manufacturing steps of the fan-out WLP. FIG. 2( a ) shows a state in which the adhesive layer 21 is formed on one surface of the support member 20 . A peeling layer may also be formed between the support member 20 and the adhesive layer 21 as required. Then, as shown in FIG. 2( b ), a plurality of semiconductor chips 22 are attached on the adhesive layer 21 . At this time, the surface on the active side of the semiconductor wafer 22 is brought into contact with the adhesive layer 21 . Next, as shown in FIG.2(c), the semiconductor wafer 22 is shape|molded by the sealing material 23 of resin. The sealing material 23 uses a material with little dimensional change after compression molding and less dimensional change when wiring is molded. Next, as shown in FIGS. 2( d ) and 2( e ), the processed substrate 24 formed by the semiconductor wafer 22 is separated from the supporting member 20 , and then fixed to the supporting glass substrate 26 via the adhesive layer 25 . At this time, the surface on the opposite side to the surface on the side where the semiconductor wafer 22 is embedded in the surface of the processing substrate 24 is arranged on the side of the supporting glass substrate 26 . In this way, the layered body 27 can be obtained. Furthermore, a peeling layer may also be formed between the adhesive layer 25 and the supporting glass substrate 26 as required. Further, after conveying the obtained laminated body 27 , as shown in FIG. 2( f ), wirings 28 are formed on the surface of the processing substrate 24 on the side where the semiconductor wafer 22 is embedded, and then a plurality of solder bumps 29 are formed. Finally, after the processed substrate 24 is separated from the supporting glass substrate 26, the processed substrate 24 is cut into each semiconductor wafer 22 and used for the subsequent packaging step (FIG. 2(g)).

FIG.3(a), FIG.3(b) is an upper conceptual diagram which shows an example of the support glass substrate of this invention. As shown in FIG. 3( a ), the outer shape of the supporting glass substrate 31 is a substantially circular wafer shape. In addition, the outer shape of the supporting glass substrate 31 includes a notch portion 32 and an outer shape portion 33 occupying an outer shape region other than the notch portion 32 . The notch portion 32 has a notch shape, that is, a concave shape. The notch-shaped deep portion 34 has a substantially circular shape with an arc in plan view, and the boundary between the notch portion 32 and the outer shape portion 33 is also substantially circular with an arc. As shown in FIG.3(b), the external shape of the support glass substrate 35 is a substantially circular wafer shape. In addition, the outer shape of the supporting glass substrate 35 includes a notch portion 36 and an outer shape portion 37 occupying an outer shape region other than the notch portion 36 . The notch part 36 of the support glass substrate 35 has a notch shape, and the deep part 38 of the notch shape has a substantially V-groove shape.

Fig. 4 is a conceptual cross-sectional view taken in the AA' direction of Fig. 3(a). As shown in FIG. 4 , a chamfered surface 42 and a chamfered surface 43 are provided in the edge region where the surface 39 and the surface 40 of the supporting glass substrate 31 intersect with the end surface 41 . The chamfer width X in the direction of the surface 39 and the surface 40 of the supporting glass substrate 31 is, for example, 50 μm to 900 μm, and the chamfering width Y+Y′ in the plate thickness direction of the supporting glass substrate 31 is, for example, 20% to 80% of the plate thickness t . Furthermore, the end surface 41, the chamfered surface 42, and the chamfered surface 43 are connected in a state of continuous arcs, respectively, and the surface 39, the surface 40, the chamfered surface 42, and the chamfered surface 43 are in a state of continuous arcs, respectively. link below.

[Example 1]

The present invention will be described below based on examples. In addition, the following Examples are only an illustration. The present invention is not limited in any way by the following examples.

Tables 1 and 2 show examples of the present invention (sample No. 1 to sample No.23). In addition, Table 3 shows the comparative examples (Sample No. 24 to Sample No. 38) of the present invention.

First, the glass batches obtained by blending glass raw materials so as to have the glass compositions in the table were put into a platinum crucible and melted at 1600° C. for 4 hours. When the glass batch is melted, it is homogenized by stirring with a platinum stirrer. Then, after the molten glass was flowed out onto the carbon plate and formed into a plate shape, it was slowly cooled to normal temperature at 3°C/min from a temperature about 20°C higher than the slow cooling point. For each obtained sample, the crack resistance, the average linear thermal expansion coefficient α 20 to 200 in the temperature range of 20°C to 200°C, and the average linear thermal expansion coefficient α _{20 to} 220 in the temperature range of 20°C to 220°C were evaluated. Average linear thermal expansion coefficient α _20~260 in the temperature range of 20℃~260℃, average linear thermal expansion coefficient α ₃₀ ~380 in the temperature range of 30℃~380℃, density, strain point Ps, slow cooling point Ta, softening Point Ts, high temperature viscosity 10 ^4.0 dPa. s temperature, high temperature viscosity 10 ^3.0 dPa. s temperature, high temperature viscosity 10 ^2.5 dPa. Temperature at s, liquidus temperature TL, viscosity η, Young's modulus, stiffness coefficient and Passan ratio at liquidus temperature TL.

The crack resistance refers to a load with a crack occurrence rate of 50%, and the crack occurrence rate is measured as follows. First, in a constant temperature and humidity tank maintained at a humidity of 30% and a temperature of 25°C, a Vickers indenter set to a predetermined load was driven into the glass surface (optical polishing surface) for 15 seconds, and after the 15 seconds The number of cracks generated at the four corners of the indentation was counted (a maximum of 4 indentation was set). In this way, the indenter was driven 20 times, and after obtaining the total number of cracks, it was obtained by the formula of (total number of cracks/80)×100.

The average linear thermal expansion coefficient in the above-mentioned temperature range is a value measured with a dilatometer.

The density is a value measured by the well-known Archimedes method.

The strain point Ps, the cold point Ta, and the softening point Ts are values measured based on the method of American Society for Testing Materials (ASTM) C336.

High temperature viscosity 10 ^4.0 dPa. s, high temperature viscosity 10 ^3.0 dPa. s and high temperature viscosity 10 ^2.5 dPa. The temperature at s is a value measured by the platinum ball pulling method.

Liquidus temperature TL is the temperature at which crystals are precipitated by microscopic observation after the glass powder that has passed through a standard sieve of 30 mesh (500 μm) and remains in 50 mesh (300 μm) is loaded into a platinum boat and kept in a temperature gradient furnace for 24 hours. The value obtained by the measurement. The viscosity η at the liquidus temperature TL is a value obtained by measuring the viscosity of the glass at the liquidus temperature TL by the platinum ball pulling method.

Young's modulus, stiffness coefficient, and Passan ratio mean values measured by a resonance method.

As is clear from Tables 1 and 2, the crack resistance of Sample No. 1 to Sample No. 23 is 600 gf or more, so it is considered that cracks are less likely to occur during transport of the laminate in the production process of the fan-out WLP. On the other hand, since the crack resistance of Sample No. 24 to Sample No. 38 is 494 gf or less, it is considered that cracks are likely to be generated during conveyance of the laminate in the production process of the fan-out WLP.

[Example 2]

First, glass raw materials were prepared so as to have the glass compositions described in Sample No. 1 to Sample No. 23 described in Tables 1 and 2, and then fed into a glass melting furnace to be melted at 1600°C to 1700°C, and then The molten glass was supplied to an overflow down-draw forming apparatus, and each was formed into a plate thickness of 0.8 mm. For the obtained glass substrate, for both surfaces Mechanical polishing was performed to reduce overall thickness variation (TTV) to less than 1 μm. After the obtained glass substrate was processed into a thickness of Φ300 mm×0.8 mm, the both surfaces thereof were subjected to polishing treatment by a polishing apparatus. Specifically, both surfaces of the glass substrate are sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the glass substrate are polished while rotating the glass substrate and the pair of polishing pads. At the time of a polishing process, it may control so that a part of glass substrate may protrude from a polishing pad. In addition, the polishing pad was made of urethane, the average particle diameter of the polishing slurry used in the polishing treatment was 2.5 μm, and the polishing speed was 15 m/min. For each of the obtained polished glass substrates, the overall thickness deviation (TTV) and the amount of warpage were measured by a Bow/Warp measuring device SBW-331ML/d manufactured by KOBELCO Scientific Corporation. . As a result, the overall thickness variation (TTV) was 0.85 μm or less, and the warpage amount was 35 μm or less, respectively.

1: Laminate

10: Support glass substrate

11: Processing substrate

12: Peel layer

13: Next layer

Claims (14)

A supporting glass substrate is used for supporting a processing substrate, and the supporting glass substrate is characterized in that: as a glass composition, it contains 45%-70% SiO ₂ and 16.3%-35% Al ₂ O ₃ in mass %. , 0%~20% B ₂ O ₃ , 5%~25% Na ₂ O, 0%~10% K ₂ O, 1%~10% MgO, and 0%~5% ZnO, mass The ratio (Al ₂ O ₃ +B ₂ O ₃ +MgO)/(Na ₂ O+K ₂ O) is 1.67 or more, and the crack resistance is 500 gf or more. The supporting glass substrate according to claim 1, wherein the glass composition contains, in mass %, 50% to 67% of SiO ₂ , 19.7% to 33% of Al ₂ O ₃ , and 0% to 15% of B ₂ O ₃ , 5%~20% Na ₂ O, 0%~3% K ₂ O, 1%~5.5% MgO, and 0%~3% ZnO, mass ratio (Al ₂ O ₃ + B ₂ O ₃ +MgO)/(Na ₂ O+K ₂ O) was 1.67 or more, and the crack resistance was 700 gf or more. The supporting glass substrate according to claim 1 or claim 2, wherein the average linear thermal expansion coefficient in the temperature range of 20°C to 220°C is 40×10 ^-7 /°C or more and 120×10 ^-7 / ℃ or lower. The supporting glass substrate according to claim 1 or claim 2, wherein the average linear thermal expansion coefficient in a temperature range of 20°C to 260°C is 40×10 ^-7 /°C or more and 120×10 ^-7 / ℃ or lower. The supporting glass substrate according to claim 1 or claim 2, wherein the average linear thermal expansion coefficient in a temperature range of 30°C to 380°C is 42×10 ^-7 /°C or more and 125×10 ^-7 / ℃ or lower. The supporting glass substrate according to claim 1 or claim 2, which has a wafer shape or a roughly circular plate shape with a diameter of 100 mm to 500 mm, a thickness of less than 2.0 mm, and an overall thickness variation (TTV) of less than 5 μm , and the warpage amount is 60 μm or less. The supporting glass substrate according to claim 1 or claim 2, which has a notch portion. A laminated body at least includes a processing substrate and a supporting glass substrate for supporting the processing substrate, and the laminated body is characterized in that: the supporting glass substrate is any one of items 1 to 7 in the scope of the patent application The supporting glass substrate. The laminate according to claim 8, wherein the processing substrate includes at least a semiconductor wafer formed by a sealing material. A method of manufacturing a semiconductor package, comprising: preparing a laminate including at least a processing substrate and a supporting glass substrate for supporting the processing substrate; and processing the processing substrate; and the supporting The glass substrate is the supporting glass substrate according to any one of the first to seventh claims. The method of manufacturing a semiconductor package according to claim 10, wherein the processing includes the step of wiring on one surface of the processing substrate. Semiconductor package as described in claim 10 or claim 11 The method for manufacturing a body, wherein the processing includes the step of forming solder bumps on a surface of the processing substrate. A semiconductor package is characterized by being produced by the manufacturing method of a semiconductor package according to any one of claims 10 to 12 of the scope of application. An electronic device includes a semiconductor package, and the electronic device is characterized in that: the semiconductor package is the semiconductor package described in item 13 of the patent application scope.

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