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TWI671813B - 半導體晶片之製造方法 - Google Patents

半導體晶片之製造方法 Download PDF

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Publication number
TWI671813B
TWI671813B TW105114218A TW105114218A TWI671813B TW I671813 B TWI671813 B TW I671813B TW 105114218 A TW105114218 A TW 105114218A TW 105114218 A TW105114218 A TW 105114218A TW I671813 B TWI671813 B TW I671813B
Authority
TW
Taiwan
Prior art keywords
etching
semiconductor substrate
wafer
semiconductor
metal catalyst
Prior art date
Application number
TW105114218A
Other languages
English (en)
Chinese (zh)
Other versions
TW201631648A (zh
Inventor
Yusaku Asano
淺野佑策
Kazuhito Higuchi
樋口和人
Taizo Tomioka
富岡泰造
Tomohiro Iguchi
井口知洋
Original Assignee
Kabushiki Kaisha Toshiba
東芝股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Toshiba, 東芝股份有限公司 filed Critical Kabushiki Kaisha Toshiba
Publication of TW201631648A publication Critical patent/TW201631648A/zh
Application granted granted Critical
Publication of TWI671813B publication Critical patent/TWI671813B/zh

Links

Classifications

    • H10P50/242—
    • H10W72/30—
    • H10P52/00—
    • H10P52/402—
    • H10P54/00—
    • H10W10/00—
    • H10W10/01—
    • H10W72/073—
    • H10W72/884—
    • H10W90/736—
    • H10W90/756—

Landscapes

  • Engineering & Computer Science (AREA)
  • Dicing (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Plasma & Fusion (AREA)
TW105114218A 2013-11-13 2014-11-04 半導體晶片之製造方法 TWI671813B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-235470 2013-11-13
JP2013235470 2013-11-13

Publications (2)

Publication Number Publication Date
TW201631648A TW201631648A (zh) 2016-09-01
TWI671813B true TWI671813B (zh) 2019-09-11

Family

ID=53216461

Family Applications (2)

Application Number Title Priority Date Filing Date
TW103138234A TWI671812B (zh) 2013-11-13 2014-11-04 半導體晶片之製造方法、半導體晶片及半導體裝置
TW105114218A TWI671813B (zh) 2013-11-13 2014-11-04 半導體晶片之製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW103138234A TWI671812B (zh) 2013-11-13 2014-11-04 半導體晶片之製造方法、半導體晶片及半導體裝置

Country Status (4)

Country Link
JP (1) JP6462747B2 (ja)
KR (3) KR101695066B1 (ja)
CN (1) CN104637877B (ja)
TW (2) TWI671812B (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6081647B1 (ja) 2016-07-28 2017-02-15 株式会社東芝 エッチング方法、半導体チップの製造方法及び物品の製造方法
JP6899252B2 (ja) * 2017-05-10 2021-07-07 株式会社ディスコ 加工方法
US10586751B2 (en) * 2017-08-03 2020-03-10 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
SG11202005030XA (en) * 2017-11-28 2020-06-29 Univ Texas Catalyst influenced pattern transfer technology
JP2019140225A (ja) 2018-02-09 2019-08-22 株式会社東芝 エッチング方法、半導体チップの製造方法及び物品の製造方法
JP7080781B2 (ja) 2018-09-26 2022-06-06 株式会社東芝 多孔質層の形成方法、エッチング方法、物品の製造方法、半導体装置の製造方法、及びめっき液
JP7314001B2 (ja) * 2019-09-20 2023-07-25 株式会社東芝 コンデンサ
JP7282710B2 (ja) * 2020-03-19 2023-05-29 株式会社東芝 半導体装置の製造方法
CN113809509B (zh) * 2020-06-11 2023-07-18 华为技术有限公司 一种天线成型方法、盖板组件及终端设备
JP2022044894A (ja) * 2020-09-08 2022-03-18 ソニーセミコンダクタソリューションズ株式会社 半導体チップ、製造方法
US11574861B2 (en) * 2021-03-25 2023-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package
CN114843182B (zh) * 2022-04-14 2025-08-08 江西乾照光电有限公司 一种晶圆刻蚀方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201126648A (en) * 2010-01-18 2011-08-01 Semiconductor Components Ind Semiconductor die singulation method
TW201216347A (en) * 2010-10-08 2012-04-16 Wakom Semiconductor Corp Method for forming a micro-pores structure or a trench structure on a silicon-chip substrate surface
TW201306301A (zh) * 2011-07-25 2013-02-01 Samsung Electronics Co Ltd 製造半導體發光二極體的方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3904496B2 (ja) 2002-09-06 2007-04-11 株式会社リコー 半導体装置の製造方法
JP4495916B2 (ja) * 2003-03-31 2010-07-07 富士通マイクロエレクトロニクス株式会社 半導体チップの製造方法
JP2005311321A (ja) * 2004-03-22 2005-11-04 Sharp Corp 半導体装置およびその製造方法、並びに、該半導体装置を備えた液晶モジュールおよび半導体モジュール
TW200620451A (en) * 2004-11-09 2006-06-16 Univ Osaka Method for forming hole in crystal substrate, and crystal substrate having hole formed by the method
CN100517645C (zh) * 2005-01-24 2009-07-22 松下电器产业株式会社 半导体芯片的制造方法及半导体芯片
JP2007194469A (ja) * 2006-01-20 2007-08-02 Renesas Technology Corp 半導体装置の製造方法
CN100477162C (zh) * 2006-02-21 2009-04-08 探微科技股份有限公司 切割晶片的方法
KR100772016B1 (ko) * 2006-07-12 2007-10-31 삼성전자주식회사 반도체 칩 및 그 형성 방법
JP4488037B2 (ja) 2007-07-24 2010-06-23 パナソニック株式会社 半導体ウェハの処理方法
US8734659B2 (en) * 2008-10-09 2014-05-27 Bandgap Engineering Inc. Process for structuring silicon
US8278191B2 (en) * 2009-03-31 2012-10-02 Georgia Tech Research Corporation Methods and systems for metal-assisted chemical etching of substrates
JP5322173B2 (ja) * 2009-09-07 2013-10-23 国立大学法人 宮崎大学 微細流路の形成方法
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
JP2013157523A (ja) * 2012-01-31 2013-08-15 Toyoda Gosei Co Ltd 半導体発光素子、半導体発光素子の製造方法および発光装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201126648A (en) * 2010-01-18 2011-08-01 Semiconductor Components Ind Semiconductor die singulation method
TW201216347A (en) * 2010-10-08 2012-04-16 Wakom Semiconductor Corp Method for forming a micro-pores structure or a trench structure on a silicon-chip substrate surface
TW201306301A (zh) * 2011-07-25 2013-02-01 Samsung Electronics Co Ltd 製造半導體發光二極體的方法

Also Published As

Publication number Publication date
TW201528363A (zh) 2015-07-16
CN104637877A (zh) 2015-05-20
JP2017118145A (ja) 2017-06-29
KR20150055567A (ko) 2015-05-21
TW201631648A (zh) 2016-09-01
TWI671812B (zh) 2019-09-11
CN104637877B (zh) 2018-04-06
JP6462747B2 (ja) 2019-01-30
KR20170123598A (ko) 2017-11-08
KR20160148491A (ko) 2016-12-26
KR101695066B1 (ko) 2017-01-10

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